INTEGRATED CIRCUITS DATA SHEET UAA2073M Image rejecting front-end for GSM applications Product specification Supersedes data of July 1995 File under Integrated Circuits, IC03 1995 Dec 07 Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073M Image rejection is achieved in the internal architecture by two RF mixers in quadrature and two all-pass filters in I and Q IF channels that phase shift the IF by 45° and 135° respectively. The two phase shifted IFs are recombined and buffered to furnish the IF output signal. FEATURES • Low-noise, wide dynamic range amplifier • Very low noise figure • Dual balanced mixer for at least 30 dB; on-chip image rejection For instance, signals presented at the RF input at LO + IF frequency are rejected through this signal processing while signals at LO − IF frequency can form the IF signal. An internal switch allows to reject the upper or lower image frequency. Image rejection is at an optimum when the IF is 71 MHz and local oscillator is above the wanted signal. • IF I/Q combination network for 50 to 100 MHz • Down-conversion mixer for closed-loop transmitters • Independent TX/RX fast on/off power-down modes • Very small outline packaging • Very small application (no image filter). The receiver section consists of a low-noise amplifier that drives a quadrature mixer pair. The IF amplifier has on-chip 45° and 135° phase shifting and a combining network for image rejection.The IF driver has differential open-collector type outputs. APPLICATIONS • 900 MHz front-end for GSM hand-portable equipment • Compact digital mobile communication equipment The LO part consists of an internal all-pass type phase shifter to provide quadrature LO signals to the receive mixers. The all-pass filters outputs are buffered before been fed to the receive mixers. • TDMA receivers. GENERAL DESCRIPTION The transmit section consists of a down-conversion mixer and a transmit IF driver stage. In the transmit mode an internal LO buffer is used to drive the transmit IF down-conversion mixer. UAA2073M contains both a receiver front-end and a high frequency transmit mixer intended for GSM (Global System for Mobile communications) cellular telephones. Designed in an advanced BiCMOS process it combines high performance with low power consumption and a high degree of integration, thus reducing external component costs and total front-end size. All RF and IF inputs or outputs are balanced to reduce EMC issues. Fast power-up switching is possible. A synthesizer-on (synthon) mode enables LO buffers independent of the other circuits. When SYNTHON pin is HIGH, all internal buffers on the LO path of the circuit are turned on, thus minimizing LO pulling when remainder of receive chain is powered-up. The main advantage of the UAA2073M is its ability to provide over 30 dB of image rejection. Consequently, the image filter between the LNA and the mixer is suppressed and the duplexer design is eased, compared with a conventional front-end design. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME UAA2073M 1995 Dec 07 SSOP20 DESCRIPTION plastic shrink small outline package; 20 leads; body width 4.4 mm 2 VERSION SOT266-1 Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073M QUICK REFERENCE DATA Note 1. SYMBOL PARAMETER MIN. TYP. MAX. UNIT VCC supply voltage 3.6 3.75 5.3 V ICC(RX) receive supply current 21 26 32 mA ICC(TX) transmit supply current 9 12 15 mA NF noise figure on demonstration board (including matching and PCB losses) − 3.25 4.3 dB GCP conversion power gain 20 23 26 dB IR image frequency rejection 30 37 − dB Tamb operating ambient temperature −30 +25 +85 °C Note 1. For conditions see Chapters “DC characteristics” and “AC characteristics”. BLOCK DIAGRAM handbook, full pagewidth VCC1 n.c. n.c. 2 3 SBS 1 UAA2073M 4 20 RFINA RFINB GND1 5 6 LNA 19 7 IFA IF COMBINER IFB low-noise amplifier RECEIVE SECTION VCC2 RXON TXON SYNTHON GND2 TRANSMIT SECTION 15 RX 11 12 10 CURRENT REGULATORS QUADRATURE PHASE SHIFTER TX IF MIXER LO 14 16 LOCAL OSCILLATOR SECTION 13 18 17 9 LOINA LOINB TXINB 8 MBG794 Fig.1 Block diagram. 1995 Dec 07 3 TXINA TXOIFA TXOIFB Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073M PINNING SYMBOL PIN DESCRIPTION SBS 1 sideband selection n.c. 2 not connected n.c. 3 not connected VCC1 4 supply voltage for receive and transmit sections handbook, halfpage SBS 1 20 IFA n.c. 2 19 IFB n.c. 3 18 LOINA VCC1 4 17 LOINB RFINA 5 RF input A (balanced) RFINB 6 RF input B (balanced) GND1 7 ground 1 for receive and transmit sections TXINA 8 transmit mixer input A (balanced) RFINA 5 TXINB 9 transmit mixer input B (balanced) SYNTHON 10 hardware power-on of LO section (including buffers to RX and TX) RXON 11 hardware power-on for receive section and LO buffers to RX TXON 12 hardware power-on for transmit section and LO buffers to TX TXOIFB 13 transmit mixer IF output B (balanced) TXOIFA 14 transmit mixer IF output A (balanced) VCC2 15 supply voltage for LO section GND2 16 ground 2 for LO section LOINB 17 LO input B (balanced) LOINA 18 LO input A (balanced) IFB 19 IF output B (balanced) IFA 20 IF output A (balanced) 1995 Dec 07 16 GND2 UAA2073M RFINB 6 15 VCC2 GND1 7 14 TXOIFA TXINA 8 13 TXOIFB TXINB 9 12 TXON SYNTHON 10 11 RXON MBG793 Fig.2 Pin configuration. 4 Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073M Balanced signal interfaces are used for minimizing crosstalk due to package parasitics. The RF differential input impedance is 150 Ω (parallel real part), choosen to minimize current consumption at best noise performance. FUNCTIONAL DESCRIPTION Receive section The circuit contains a low-noise amplifier followed by two high dynamic range mixers. These mixers are of the Gilbert-cell type. The whole internal architecture is fully differential. The IF output is differential and of the open-collector type, tuned for 71 MHz. Typical application will load the output with a differential 500 Ω load; i.e. a 500 Ω resistor load at each IF output, plus a 1 kΩ to x Ω narrow band matching network (x Ω being the input impedance of the IF filter). The path to VCC for the DC current is achieved via tuning inductors. The output voltage is limited to VCC + 3Vbe or 3 diode forward voltage drops. The local oscillator, shifted in phase to 45° and 135°, mixes the amplified RF to create I and Q channels. The two I and Q channels are buffered, phase shifted by 45° and 135° respectively, amplified and recombined internally to realize the image rejection. Fast switching, on/off, of the receive section is controlled by the hardware input RXON. Pin SBS allows sideband selection: • fLO < fRF (SBS = 1) • fLO > fRF (SBS = 0). SBS handbook, full pagewidth MIXER VCC1 IF amplifier +45o IFA RFINA RFINB IF COMBINER MIXER IFB LNA GND1 IF amplifier +135o MBG795 SYNTHON RXON LOIN Fig.3 Block diagram, receive section. 1995 Dec 07 5 Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073M Local oscillator section Transmit mixer The local oscillator (LO) input directly drives the two internal all-pass networks to provide quadrature LO to the receive mixers. This mixer is used for down-conversion to the transmit IF. Its inputs are coupled to the transmit RF and down-convert it to a modulated transmit IF frequency which is phase locked with the baseband modulation. The LO differential input impedance is 50 Ω (parallel real part). The transmit mixer provides a differential input at 200 Ω and a differential output driver buffer for a 1 kΩ load. The IF outputs are low impedance (emitter followers). A synthesizer-on (synthon) mode is used to power-up the buffering on the LO inputs, minimizing the pulling effect on the external VCO when entering transmit or receive modes. Fast switching, on/off, of the transmit section is controlled by the hardware input TXON. This mode is active when the SYNTHON input is HIGH. Table 1 shows status of circuit in accordance with TXON, RXON and SYNTHON inputs. to RX handbook, halfpage handbook, halfpage VCC2 TX MIXER RX RXON CURRENT REGULATORS TXON SYNTHON TX IF TXOIFA TXOIFB LOIN QUAD LO MBG797 TXON to TX GND2 TXINB SYNTHON TXINA MBG796 LOINA LOINB Fig.4 Block diagram, LO section. 1995 Dec 07 Fig.5 Block diagram, transmit mixer. 6 Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073M Table 1 Control of power status EXTERNAL PIN LEVEL CIRCUIT MODE OF OPERATION TXON RXON SYNTHON LOW LOW LOW power-down mode LOW HIGH LOW RX mode: receive section and LO buffers to RX on HIGH LOW LOW TX mode: transmit section and LO buffers to TX on LOW LOW HIGH synthon mode: complete LO section on LOW HIGH HIGH SRX mode: receive section on and synthon mode active HIGH LOW HIGH STX mode: transmit section on and synthon mode active HIGH HIGH LOW receive and transmit sections on; specification not guaranteed HIGH HIGH HIGH receive and transmit sections on; specification not guaranteed LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VCC supply voltage − 9 V ∆GND difference in ground supply voltage applied between GND1 and GND2 − 0.6 V Pl(max) maximum power input − +20 dBm Pdis(max) maximum power dissipation in quiet air − 250 mW Tj(max) maximum operating junction temperature − +150 °C Tstg storage temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient in free air VALUE UNIT 120 K/W HANDLING Every pin withstands the ESD test in accordance with MIL-STD-883C class 2 (method 3015.5). 1995 Dec 07 7 Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073M DC CHARACTERISTICS VCC = 3.75 V; Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Pins VCC1 and VCC2 VCC supply voltage ICC(RX) over full temperature range 3.6 3.75 5.3 V supply current in RX mode 21 26 32 mA ICC(TX) supply current in TX mode 9 12 15 mA ICC(SX) supply current in synthon mode 4.4 5.6 6.6 mA ICC(SRX) supply current in SRX mode 23 28 34 mA ICC(STX) supply current in STX mode 12.5 15.0 19.5 mA ICC(PD) supply current in power-down mode − 0.01 50 µA − 1.25 − V Pins SYNTHON, RXON, TXON and SBS Vth CMOS threshold voltage note 1 VIH HIGH level input voltage 0.7VCC − VCC V VIL LOW level input voltage −0.3 − 0.8 V IIH HIGH level static input current pin at VCC − 0.4 V −1 − +1 µA IIL LOW level static input current pin at 0.4 V −1 − +1 µA receive section on 2.0 2.2 2.4 V receive section on 2.3 3.0 3.8 mA transmit section on 2.1 2.4 2.6 V transmit section on 1.8 1.9 2.1 V receive section on 2.3 2.5 2.8 V transmit section on 2.3 2.5 2.8 V Pins RFINA and RFINB VI(RFIN) DC input voltage level Pins IFA and IFB IO(IF) DC output current Pins TXINA and TXINB VI(TXIN) DC input voltage level Pins TXOIFA and TXOIFB VO(TXOIF) DC output voltage level Pins LOINA and LOINB VI(LOIN) DC input voltage level Note 1. The referenced inputs should be connected to a valid CMOS input level. 1995 Dec 07 8 Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073M AC CHARACTERISTICS VCC = 3.75 V; Tamb = −30 to +85 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Receive section (receive section on) − 150 − Ω 925 − 960 MHz note 1 15 20 − dB conversion power gain differential RF input to differential IF output matched to 1 kΩ differential 20 23 26 dB Grip gain ripple as a function of RF frequency note 2 − 0.2 0.5 dB ∆G/T gain variation with temperature note 2 −20 −15 −10 mdB/K DES1 1 dB desensitization input power interferer frequency offset 3 MHz − −30 − dBm CP1RX 1 dB input compression point note 1 −24.5 −23.0 − dBm IP2DRX 2nd order intercept point referenced to the RF differential input differential output; note 2 +30 +40 − dBm IP3RX 3rd order intercept point referenced to the RF input note 2 −18 −15 − dBm NFRX overall noise figure RF input to differential IF output; − notes 2 and 3 3.25 4.30 dB RL(IF) typical application IF output load resistor between pin and VCC − 500 − Ω CL(IF) IF output load capacitance unbalanced − − 2 pF fIF IF frequency range fLO > fRF 50 71 100 MHz fLO < fRF 50 71 100 MHz IR image frequency rejection 30 37 − dB ZRF RF input impedance (real part) fRF RF input frequency RLRF return loss on matched RF input GCP balanced parallel Local oscillator section (RXON or TXON or SYNTHON = 1) fLO LO input frequency 850 − 1100 MHz ZLO LO input impedance balanced − 50 − Ω ∆ZLO impedance change when switching from synthon mode to SRX or STX mode mUnits measured on Smith chart; note 1 − 20 − Ω RLLO return loss on matched input (including power-down mode) note 2 10 15 − dB Pi(LO) LO input power level −7 −4 0 dBm RILO reverse isolation 40 − − dB 1995 Dec 07 LOIN to RFIN at LO frequency; note 2 9 Philips Semiconductors Product specification Image rejecting front-end for GSM applications SYMBOL UAA2073M PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Transmit section (transmit section on) ZO(TX) TX IF output impedance − − 200 Ω ZL(TX) TX IF load impedance − 1 − kΩ CL(TX) TX IF load capacitance − − 2 pF Zi(TX) TX RF input impedance − 200 − Ω fi(TX) TX input frequency 880 − 915 MHz RLTX return loss on matched TX input note 1 15 20 − dB GCP conversion power gain from 200 Ω to 1 kΩ output; note 2 5 7.4 10 dB fo(TX) TX output frequency 40 − 200 MHz CP1TX 1 dB input compression point −22 −17.5 − dBm IP2TX 2nd order intercept point − +20 − dBm IP3TX 3rd order intercept point −12 −9 − dBm NFTX noise figure double sideband; notes 2 and 3 − 9.8 12 dB RITX reverse isolation TXIN to LOIN; note 2 40 − − dB ITX isolation LOIN to TXIN; note 2 40 − − dB 1 5 20 µs balanced note 1 Timing tstart start-up time of each block Notes 1. Measured and guaranteed only on Philips UAA2073M demonstration board at Tamb = +25 °C. 2. Measured and guaranteed only on Philips UAA2073M demonstration board. 3. This value includes printed-circuit board and balun losses on Philips UAA2073M demonstration board over full temperature range. 1995 Dec 07 10 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... R4 680 Ω SBS C20 27 pF VCC L2 15 nH C24 1 nF R5 680 kΩ C23 27 pF C2 RFIN 925 to 960 MHz C3 1.5 pF L3 15 nH C19 19 C12 3 18 27 pF C9 2.7 pF 17 C11 L7 6.8 nH 16 VCC C10 2.7 pF L14 220 nH 15 11 TXIN 880 to 915 MHz C5 2.2 pF L4 15 nH 27 pF L6 27 nH C7 7 14 8 13 9 12 10 11 2 1 RXON 2 C6 2.2 pF C26 27 pF R1 C13 180 Ω 390 pF R2 C14 C31 8.2 pF L13 220 nH TXOIF 117 MHz 180 Ω 390 pF C32 8.2 pF SYNTHON 27 pF LOIN 854 to 1032 MHz 27 pF 27 pF C15 C8 IFO 71 MHz 2 6 27 pF IFB C34 18 pF L15 270 nH C18 L8 6.8 nH UAA2073M C1 1.5 pF L5 15 nH 10 pF 270 nH L16 20 5 L1 18 nH L12 470 nH IFA 1 4 27 pF C4 C17 1 nF Philips Semiconductors 5V L11 470 nH C33 Image rejecting front-end for GSM applications R3 680 Ω 18 pF APPLICATION INFORMATION 1995 Dec 07 10 pF R9 680 kΩ 1 TXON 2 C25 27 pF R8 680 kΩ 1 C27 27 pF R10 680 kΩ 120 pF VCC Product specification Fig.6 Philips demonstration board diagram for GSM applications. MBG798 UAA2073M All matching is to 50 Ω for measurement purposes. Different values will be used in a real application. handbook, full pagewidth C28 Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073M Table 2 UAA2073M demonstration board parts list PART VALUE SIZE LOCATION PART Resistors VALUE SIZE LOCATION Inductors R1 180 Ω 0805 TXOIF L1 18 nH 0805 RFIN R2 180 Ω 0805 TXOIF L2 15 nH 0805 RFIN R3 680 Ω 0805 IFO L3 15 nH 0805 RFIN R4 680 Ω 0805 IFO L4 15 nH 0805 TXIN R5 680 kΩ 0805 SBS L5 15 nH 0805 TXIN R8 680 kΩ 0805 RXON L6 27 nH 0805 TXIN R9 680 kΩ 0805 SYNTHON L7 6.8 nH 0805 LOIN R10 680 kΩ 0805 TXON L8 6.8 nH 0805 LOIN Capacitors L11 470 nH 1008 IFO C1 1.5 pF 0805 RFIN L12 470 nH 1008 IFO C2 27 pF 0805 RFIN L13 220 nH 0805 TXOIF C3 1.5 pF 0805 RFIN L14 220 nH 0805 TXOIF 270 nH 1008 IFO 270 nH 1008 IFO C4 27 pF 0805 RFIN L15 C5 2.2 pF 0805 TXIN L16 C6 2.2 pF 0805 TXIN C7 27 pF 0805 TXIN C8 27 pF 0805 TXIN C9 2.7 pF 0805 LOIN IC1 UAA2073M sockets for RF and IF inputs/outputs VCC socket Other components COMPONENT C10 2.7 pF 0805 LOIN SMA/RIM C11 27 pF 0805 LOIN SMB C12 27 pF 0805 LOIN C13 390 pF 0805 TXOIF C14 390 pF 0805 TXOIF C15 27 pF 0805 VCCLO C17 10 pF 0805 IFO C18 10 pF 0805 IFO C19 1 nF 0805 IF/VCC C20 27 pF 0805 SBS C23 27 pF 0805 VCCLNA C24 1 nF 0805 VCCLNA C25 27 pF 0805 RXON C26 27 pF 0805 SYNTHON C27 27 pF 0805 TXON C28 120 pF 0805 VCC C31 8.2 pF 0805 TXOIF C32 8.2 pF 0805 TXOIF C33 18 pF 0805 IFO C34 18 pF 0805 IFO 1995 Dec 07 DESCRIPTIONS Component manufacturers All surface mounted resistors and capacitors are from Philips Components. The small value capacitors are multilayer ceramic with NPO dielectric. The inductors are from Coilcraft UK. 12 Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073M PACKAGE OUTLINE SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm D SOT266-1 E A X c y HE v M A Z 11 20 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 10 detail X w M bp e 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) θ mm 1.5 0.15 0 1.4 1.2 0.25 0.32 0.20 0.20 0.13 6.6 6.4 4.5 4.3 0.65 6.6 6.2 1.0 0.75 0.45 0.65 0.45 0.2 0.13 0.1 0.48 0.18 10 0o Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 90-04-05 95-02-25 SOT266-1 1995 Dec 07 EUROPEAN PROJECTION 13 o Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073M If wave soldering cannot be avoided, the following conditions must be observed: SOLDERING Introduction • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. • The longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. Even with these conditions, only consider wave soldering SSOP packages that have a body width of 4.4 mm, that is SSOP16 (SOT369-1) or SSOP20 (SOT266-1). This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Reflow soldering Reflow soldering techniques are suitable for all SSOP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. Wave soldering Wave soldering is not recommended for SSOP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. 1995 Dec 07 14 Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073M DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Dec 07 15 Philips Semiconductors – a worldwide company Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428) BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367 Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02)805 4455, Fax. (02)805 4466 Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213, Tel. (01)60 101-1236, Fax. (01)60 101-1211 Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands, Tel. (31)40 783 749, Fax. (31)40 788 399 Brazil: Rua do Rocio 220 - 5th floor, Suite 51, CEP: 04552-903-SÃO PAULO-SP, Brazil. P.O. Box 7383 (01064-970), Tel. (011)821-2333, Fax. (011)829-1849 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS: Tel. (800) 234-7381, Fax. (708) 296-8556 Chile: Av. Santa Maria 0760, SANTIAGO, Tel. (02)773 816, Fax. (02)777 6730 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. (852)2319 7888, Fax. (852)2319 7700 Colombia: IPRELENSO LTDA, Carrera 21 No. 56-17, 77621 BOGOTA, Tel. (571)249 7624/(571)217 4609, Fax. (571)217 4549 Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. (032)88 2636, Fax. (031)57 1949 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. (358)0-615 800, Fax. (358)0-61580 920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. (01)4099 6161, Fax. (01)4099 6427 Germany: P.O. Box 10 63 23, 20043 HAMBURG, Tel. (040)3296-0, Fax. (040)3296 213. Greece: No. 15, 25th March Street, GR 17778 TAVROS, Tel. (01)4894 339/4894 911, Fax. (01)4814 240 India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, Bombay 400 018 Tel. (022)4938 541, Fax. (022)4938 722 Indonesia: Philips House, Jalan H.R. Rasuna Said Kav. 3-4, P.O. Box 4252, JAKARTA 12950, Tel. (021)5201 122, Fax. (021)5205 189 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. (01)7640 000, Fax. (01)7640 200 Italy: PHILIPS SEMICONDUCTORS S.r.l., Piazza IV Novembre 3, 20124 MILANO, Tel. (0039)2 6752 2531, Fax. (0039)2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2 -chome, Minato-ku, TOKYO 108, Tel. (03)3740 5130, Fax. (03)3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. (02)709-1412, Fax. (02)709-1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. (03)750 5214, Fax. (03)757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TX 79905, Tel. 9-5(800)234-7381, Fax. (708)296-8556 Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. (040)783749, Fax. (040)788399 (From 10-10-1995: Tel. (040)2783749, Fax. (040)2788399) New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. (09)849-4160, Fax. (09)849-7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. (022)74 8000, Fax. (022)74 8341 Pakistan: Philips Electrical Industries of Pakistan Ltd., Exchange Bldg. ST-2/A, Block 9, KDA Scheme 5, Clifton, KARACHI 75600, Tel. (021)587 4641-49, Fax. (021)577035/5874546 Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc, 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. (02)810 0161, Fax. (02)817 3474 Portugal: PHILIPS PORTUGUESA, S.A., Rua dr. António Loureiro Borges 5, Arquiparque - Miraflores, Apartado 300, 2795 LINDA-A-VELHA, Tel. (01)4163160/4163333, Fax. (01)4163174/4163366 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. (65)350 2000, Fax. (65)251 6500 South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430, Johannesburg 2000, Tel. (011)470-5911, Fax. (011)470-5494. Spain: Balmes 22, 08007 BARCELONA, Tel. (03)301 6312, Fax. (03)301 42 43 Sweden: Kottbygatan 7, Akalla. S-164 85 STOCKHOLM, Tel. (0)8-632 2000, Fax. (0)8-632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. (01)488 2211, Fax. (01)481 77 30 Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West Road, Sec. 1. Taipeh, Taiwan ROC, P.O. Box 22978, TAIPEI 100, Tel. (02)388 7666, Fax. (02)382 4382 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, Bangkok 10260, THAILAND, Tel. (662)398-0141, Fax. (662)398-3319 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. (0 212)279 27 70, Fax. (0212)282 67 07 United Kingdom: Philips Semiconductors LTD., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. (0181)730-5000, Fax. (0181)754-8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. (800)234-7381, Fax. (708)296-8556 Uruguay: Coronel Mora 433, MONTEVIDEO, Tel. (02)70-4044, Fax. (02)92 0601 Internet: http://www.semiconductors.philips.com/ps/ For all other countries apply to: Philips Semiconductors, International Marketing and Sales, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Telex 35000 phtcnl, Fax. +31-40-724825 (from 10-10-1995: +31-40-2724825) SCD41 © Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 413061/1100/03/pp16 Document order number: Date of release: 1995 Dec 07 9397 750 00511