Common Source Push-Pull Pair ARF477FL D G S S G S S ARF477FL D RF POWER MOSFET N - CHANNEL PUSH - PULL PAIR 165V 400W 100MHz The ARF477FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 100 MHz. • Specified 150 Volt, 65 MHz Characteristics: • Output Power = 400 Watts • Gain = 15dB (Class AB) • Efficiency = 50% min • High Performance Push-Pull RF Package. • High Voltage Breakdown and Large SOA for Superior Ruggedness. • Low Thermal Resistance. • RoHS Compliant All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter Ratings VDSS Drain-Source Voltage 500 VDGO Drain-Gate Voltage 500 ID Unit V Continuous Drain Current @ TC = 25°C (each device) 15 A VGS Gate-Source Voltage ±30 V PD Total Power Dissipation @ TC = 25°C 750 W TJ, TSTG TL Operating and Storage Junction Temperature Range -55 to 175 Lead Temperature: 0.063” from Case for 10 Sec. °C 300 Static Electrical Characteristics Symbol Parameter Min BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) 500 VDS(ON) On State Drain Voltage 1 (ID(ON) = 7.5A, VGS = 10V) Typ Max 2.9 4 Unit V Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 50VDSS, VGS = 0, TC = 125°C) 250 IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA gfs Forward Transconductance (VDS = 15V, ID = 7.5A) 3.5 8 mhos gfs1/gfa2 Forward Transconductance Match Ratio (VDS = 15V, ID = 5A) 0.9 VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA) VGS(TH) Gate Threshold Voltage Match (VDS = VGS, ID = 50mA) IDSS 5.6 μA 1.1 3 5 0.2 Volts Max Unit Thermal Characteristics RθJHS Parameter Min Typ Junction to Case 0.18 0.2 Junction to Sink (High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) 0.30 0.32 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com °C/W 050-4952 B 3-2010 Symbol RθJC DYNAMIC CHARACTERISTICS (per section) Symbol Parameter Test Conditions CISS Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf ARF477FL Fall Time Min Typ Max VGS = 0V 1200 1400 VDS = 150V 150 180 f = 1MHz 60 75 Unit pF 7 VGS = 15V VDD = 250V ID = ID[Cont.] @ 25°C 20 RG = 1.6 Ω 4.0 7 Max 6 nS Functional Characteristics Symbol Characteristic GPS Test Conditions Min Typ f = 65MHz 14 16 dB Idq = 0mA VDD = 150V 50 55 % Common Source Amplifier Power Gain η Drain Efficiency Ψ Electrical Ruggedness VSWR 10:1 POUT = 400W No Degradation in Output Power 1. Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 25 Ciss 20 15 7V 10 6.5V 6V 5 0 ID, DRAIN CURRENT (AMPERES) Coss 500 Crss 100 50 5.5V 5V 4.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1, Typical Output Characteristics 16 12 CAPACITANCE (pf) 8V 1000 TJ = -55°C 8 TJ = +125°C 56.00 → VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE 4 10 .1 .5 1 5 10 50 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage → ← TJ = -55°C TJ = +25°C → 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) → 050-4952 B 3-2010 5000 9V VGS=15 & 10V OPERATION HERE LIMITED BY R (ON) DS 10.00 1.00 TC =+25°C TJ =+150°C SINGLE PULSE 0.10 Unit 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area ARF477FL 0.20 D = 0.9 0.7 0.15 0.5 Note: PDM 0.10 0.3 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.1 0.05 10 -5 SINGLE PULSE 10 10-3 10-2 10 -1 RECTANGULAR PULSE DURATION (SECONDS) Figure 5a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration -4 TJ (˚C) 1.0 TC (˚C) .108 .0915 Dissipated Power (Watts) .0111F .133F ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. Figure 5b, TRANSIENT THERMAL IMPEDANCE MODEL Freq. (MHz) Zin (Ω) ZOUT (Ω) 40 1.5 - j 10 24 - j 37 60 1.9 - j 1.3 13 - j 29 80 2.2 - j 0.82 7.9 - j 24 ZIN - Gate shunted with 100Ω Idq = 0 ZOL - Conjugate of optimum load for 400 Watts output at Vdd=125V 050-4952 B 3-2010 0 t1 t2 0.05 ZEXT ZθJC, THERMAL IMPEDANCE (°C/W) 0.25 ARF477FL 65MHz Test Circuit .100 .100 .100 Thermal Considerations and Package Mounting: .320 +/- .010 1.000 .125R 4 pls .080 .125dia 4 pls .570 ARF477FL .320 The package design clamps the ceramic base to the heatsink. A clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the base and the heat sink. Four 4-40 (M3) screws provide the required mounting force. T = 6 in-lb (0.68 N-m). 1.250 .175 .150 .150 .320 .175 .200 .300 050-4952 B 3-2010 .005 .040 1.500 The rated power dissipation is only available when the package mounting surface is at 25°C and the junction temperature is 175°C. The thermal resistance between junctions and case mounting surface is 0.23 °C/W. When installed, an additional thermal impedance of 0.07°C/W between the package base and the mounting surface is typical. Insure that the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. Use the minimum amount necessary to coat the surface. The heatsink should incorporate a copper heat spreader to obtain best results. HAZARDOUS MATERIAL WARNING The white ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste. Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.