SO T8 83 B PMZB320UPE 30 V, P-channel Trench MOSFET 24 March 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge (ESD) protection > 2 kV HBM Ultra thin package profile of 0.37 mm 3. Applications • • • • Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -30 V VGS gate-source voltage -8 - 8 V ID drain current - - -1 A - 430 510 mΩ VGS = -4.5 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = -4.5 V; ID = -1 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . Scan or click this QR code to view the latest information for this product PMZB320UPE NXP Semiconductors 30 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G Simplified outline gate 2 S source 3 D drain Graphic symbol D 1 3 2 Transparent top view G DFN1006B-3 (SOT883B) S 017aaa259 6. Ordering information Table 3. Ordering information Type number PMZB320UPE Package Name Description Version DFN1006B-3 DFN1006B-3: leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm SOT883B 7. Marking Table 4. Marking codes Type number Marking code PMZB320UPE 0101 0010 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig. 1. DFN1006B-3 (SOT883B) binary marking code description PMZB320UPE Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 15 PMZB320UPE NXP Semiconductors 30 V, P-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -30 V VGS gate-source voltage -8 8 V ID drain current VGS = -4.5 V; Tamb = 25 °C [1] - -1 A VGS = -4.5 V; Tamb = 100 °C [1] - -0.6 A - -4 A [2] - 350 mW [1] - 760 mW - 6250 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - -0.7 A Source-drain diode IS source current Tamb = 25 °C [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for [2] drain 1 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 2. 017aaa124 120 - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMZB320UPE Product data sheet 0 - 75 175 Fig. 3. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 24 March 2015 25 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 15 PMZB320UPE NXP Semiconductors 30 V, P-channel Trench MOSFET aaa-017063 -10 ID (A) tp = 10 µs Limit RDSon = VDS/ID -1 100 µs 1 ms DC; Tsp = 25 °C -10-1 10 ms DC; Tamb = 25 °C; 1 cm2 100 ms -10-2 -10-1 Fig. 4. -1 -10 -102 VDS (V) Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] PMZB320UPE Product data sheet Min Typ Max Unit [1] - 315 360 K/W [2] - 145 165 K/W - 17 20 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . All information provided in this document is subject to legal disclaimers. 24 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 15 PMZB320UPE NXP Semiconductors 30 V, P-channel Trench MOSFET aaa-017064 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 102 0.33 0.20 0.50 0.10 0.05 0.25 0.10 0.02 0.01 0 10 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-017065 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.33 0.20 10 1 10-3 0.50 0.10 0.25 0.05 0.02 0.01 0 10-2 10-1 FR4 PCB, mounting pad for drain 1 cm Fig. 6. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMZB320UPE Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 15 PMZB320UPE NXP Semiconductors 30 V, P-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -30 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.45 -0.7 -0.95 V IDSS drain leakage current VDS = -30 V; VGS = 0 V; Tj = 25 °C - - -1 µA IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 5 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -5 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -1 µA VGS = 2.5 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -2.5 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = -4.5 V; ID = -1 A; Tj = 25 °C - 430 510 mΩ VGS = -4.5 V; ID = -1 A; Tj = 150 °C - 680 810 mΩ VGS = -2.5 V; ID = -0.8 A; Tj = 25 °C - 570 770 mΩ VGS = -1.8 V; ID = -0.25 A; Tj = 25 °C - 750 1140 mΩ VGS = -1.5 V; ID = -0.01 A; Tj = 25 °C - 950 1610 mΩ VDS = -10 V; ID = -1 A; Tj = 25 °C - 2.1 - S total gate charge VDS = -15 V; ID = -1 A; VGS = -4.5 V; - 1.4 - nC QGS gate-source charge Tj = 25 °C - 0.2 - nC QGD gate-drain charge - 0.3 - nC Ciss input capacitance VDS = -15 V; f = 1 MHz; VGS = 0 V; - 122 - pF Coss output capacitance Tj = 25 °C - 11 - pF Crss reverse transfer capacitance - 9 - pF td(on) turn-on delay time VDS = -15 V; ID = -1 A; VGS = -4.5 V; - 3 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 6 - ns td(off) turn-off delay time - 22 - ns tf fall time - 5 - ns - -1 -1.2 V RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) Source-drain diode VSD source-drain voltage PMZB320UPE Product data sheet IS = -0.7 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 24 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 15 PMZB320UPE NXP Semiconductors 30 V, P-channel Trench MOSFET aaa-017066 -4 ID (A) aaa-017067 -10-3 VGS = -4.5 V ID (A) -2.5 V -3 -10-4 -2.0 V -2 -1.8 V (1) -10-5 (2) (3) -1.5 V -1 -1.2 V 0 Fig. 7. 0 -1 -2 -3 VDS (V) -10-6 -4 -0.5 Tj = 25 °C VDS = -5 V Output characteristics: drain current as a function of drain-source voltage; typical values Tj = 25 °C aaa-017068 2.0 -1.5 V RDS(on) (Ω) VGS (V) -1.5 Sub-threshold drain current as a function of gate-source voltage aaa-017069 2.0 -1.8 V RDS(on) -2.0 V 1.6 1.5 1.2 -2.5 V 1.0 -3.0 V 0.8 Tj = 150 °C 0.5 VGS = -4.5 V 0.4 0 -1.0 (1) minimum values (2) typical values (3) maximum values Fig. 8. 0 -1 -2 -3 ID (A) Tj = 25 °C 0 -4 Tj = 25 °C Fig. 9. 0 Product data sheet -1 -2 -3 -4 VGS (V) -5 ID = -1.7 A Drain-source on-state resistance as a function of drain current; typical values PMZB320UPE 0 Fig. 10. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 24 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 15 PMZB320UPE NXP Semiconductors 30 V, P-channel Trench MOSFET aaa-017070 -4 ID (A) aaa-017071 2.0 a Tj = 25 °C -3 Tj = 150 °C 1.5 -2 1.0 -1 0.5 0 0 -1 -2 -3 VGS (V) 0 -60 -4 VDS > ID x RDSon Fig. 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values 60 120 Tj (°C) 180 Fig. 12. Normalized drain-source on-state resistance as a function of ambient temperature; typical values aaa-017072 -1.5 0 aaa-017073 103 C (pF) VGS(th) (V) (1) -1.0 102 (1) (2) (2) -0.5 -0 -60 10 (3) 0 60 120 Tj (°C) 1 -10-1 180 (3) -1 ID = -250 µA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (2) typical values (3) maximum values (1) Ciss Product data sheet VDS (V) -102 (2) Coss (3) Crss Fig. 13. Gate-source threshold voltage as a function of ambient temperature PMZB320UPE -10 Fig. 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 24 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 15 PMZB320UPE NXP Semiconductors 30 V, P-channel Trench MOSFET aaa-017074 -5 VDS VGS (V) ID -4 VGS(pl) -3 VGS(th) VGS -2 QGS1 QGS2 QGS -1 QGD QG(tot) 003aaa508 0 0 0.3 0.6 0.9 Fig. 16. Gate charge waveform definitions 1.2 1.5 QG (nC) VDS = -15 V; ID = -1 A; Tamb = 25 °C Fig. 15. Gate-source voltage as a function of gate charge; typical values aaa-017075 -3 IS (A) -2 -1 Tj = 150 °C 0 0 -0.4 Tj = 25 °C -0.8 -1.2 -1.6 -2.0 VSD (V) VGS = 0 V Fig. 17. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 18. Duty cycle definition PMZB320UPE Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 15 PMZB320UPE NXP Semiconductors 30 V, P-channel Trench MOSFET 12. Package outline Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm L (2x) SOT883B L1 2 b (2x) 3 e b1 1 e1 A1 A E D 0 0.5 Dimensions Unit 1 mm scale A(1) A1 b b1 D E e e1 L L1 max 0.40 0.04 0.20 0.55 0.65 1.05 0.30 0.30 nom 0.37 0.15 0.50 0.60 1.00 0.35 0.65 0.25 0.25 min 0.34 0.12 0.47 0.55 0.95 0.22 0.22 mm Note 1. Including plating thickness Outline version sot883b_po References IEC JEDEC JEITA European projection Issue date 11-11-02 12-01-03 SOT883B Fig. 19. Package outline DFN1006B-3 (SOT883B) PMZB320UPE Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 15 PMZB320UPE NXP Semiconductors 30 V, P-channel Trench MOSFET 13. Soldering Footprint information for reflow soldering SOT883B 1.3 0.7 R0.05 (8x) 0.9 0.6 0.7 0.25 (2x) 0.3 (2x) 0.3 0.4 (2x) 0.4 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot883b_fr Fig. 20. Reflow soldering footprint for DFN1006B-3 (SOT883B) PMZB320UPE Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 15 PMZB320UPE NXP Semiconductors 30 V, P-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMZB320UPE v.1 20150324 Product data sheet - - PMZB320UPE Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2015 © NXP Semiconductors N.V. 2015. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 Test information ..................................................... 9 12 Package outline ................................................... 10 13 Soldering .............................................................. 11 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 24 March 2015 PMZB320UPE Product data sheet All information provided in this document is subject to legal disclaimers. 24 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 15 / 15