SO T8 83 B PMZB1200UPE 30 V, P-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge (ESD) protection > 2 kV HBM Ultra thin package profile of 0.37 mm height 3. Applications • • • • Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -30 V VGS gate-source voltage -8 - 8 V ID drain current - - -410 mA - 1.2 1.4 Ω VGS = -4.5 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = -4.5 V; ID = -410 mA; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . Scan or click this QR code to view the latest information for this product PMZB1200UPE NXP Semiconductors 30 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G Simplified outline gate 2 S source 3 D drain Graphic symbol D 1 3 2 Transparent top view G DFN1006B-3 (SOT883B) S 017aaa259 6. Ordering information Table 3. Ordering information Type number PMZB1200UPE Package Name Description Version DFN1006B-3 DFN1006B-3: leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm SOT883B 7. Marking Table 4. Marking codes Type number Marking code PMZB1200UPE 0101 0110 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig. 1. DFN1006B-3 (SOT883B) binary marking code description PMZB1200UPE Product data sheet All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 15 PMZB1200UPE NXP Semiconductors 30 V, P-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -30 V VGS gate-source voltage -8 8 V ID drain current VGS = -4.5 V; Tamb = 25 °C [1] - -410 mA VGS = -4.5 V; Tamb = 100 °C [1] - -260 mA - -1.7 A [2] - 310 mW [1] - 400 mW - 1670 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - -410 mA Source-drain diode IS source current Tamb = 25 °C [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for [2] drain 1 cm . Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 2. 017aaa124 120 - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMZB1200UPE Product data sheet 0 - 75 175 Fig. 3. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 25 March 2015 25 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 15 PMZB1200UPE NXP Semiconductors 30 V, P-channel Trench MOSFET aaa-017230 -10 ID (A) Limit RDSon = VDS/ID tp = 10 µs -1 100 µs 1 ms -10-1 DC; Tsp = 25 °C 10 ms 100 ms DC; Tamb = 25 °C; drain mounting pad 1 cm2 -10-2 -10-3 -10-1 Fig. 4. -1 -10 -102 VDS (V) Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] PMZB1200UPE Product data sheet Min Typ Max Unit [1] - 350 405 K/W [2] - 270 310 K/W - 65 75 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 15 PMZB1200UPE NXP Semiconductors 30 V, P-channel Trench MOSFET aaa-015213 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.50 102 0.33 0.25 0.20 0.10 0.05 0.01 0 0.02 10 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-015215 103 Zth(j-a) (K/W) duty cycle = 1 102 0.50 0.25 0.75 0.33 0.20 0.10 0.05 0.02 0.01 0 10 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 1 cm Fig. 6. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMZB1200UPE Product data sheet All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 15 PMZB1200UPE NXP Semiconductors 30 V, P-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -30 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.45 -0.7 -0.95 V IDSS drain leakage current VDS = -30 V; VGS = 0 V; Tj = 25 °C - - -1 µA IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 5 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -5 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 1 nA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -1 nA VGS = 2.5 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -2.5 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = -4.5 V; ID = -410 mA; Tj = 25 °C - 1.2 1.4 Ω VGS = -4.5 V; ID = -410 mA; Tj = 150 °C - 2 2.4 Ω VGS = -2.5 V; ID = -320 mA; Tj = 25 °C - 1.7 2.3 Ω VGS = -1.8 V; ID = -80 mA; Tj = 25 °C - 2.1 3.1 Ω VGS = -1.5 V; ID = -10 mA; Tj = 25 °C - 3 5.1 Ω VDS = -10 V; ID = -200 mA; Tj = 25 °C - 820 - mS total gate charge VDS = -15 V; ID = -410 mA; - 0.7 1.2 nC QGS gate-source charge VGS = -4.5 V; Tj = 25 °C - 0.2 - nC QGD gate-drain charge - 0.2 - nC Ciss input capacitance VDS = -15 V; f = 1 MHz; VGS = 0 V; - 43.2 - pF Coss output capacitance Tj = 25 °C - 5.9 - pF Crss reverse transfer capacitance - 4.2 - pF td(on) turn-on delay time VDS = -15 V; ID = -410 A; VGS = -4.5 V; - 3 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 4 - ns td(off) turn-off delay time - 14 - ns tf fall time - 5 - ns - -0.95 -1.2 V RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) Source-drain diode VSD source-drain voltage PMZB1200UPE Product data sheet IS = -410 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 15 PMZB1200UPE NXP Semiconductors 30 V, P-channel Trench MOSFET aaa-017220 -2.0 ID (A) ID (A) -3.0 V -1.5 aaa-017221 -10-3 VGS = -4.5 V -10-4 -2.5 V -1.0 -2.0 V (1) -10-5 (2) (3) -1.8 V -0.5 -1.5 V -1.2 V 0 Fig. 7. 0 -1 -2 -3 VDS (V) -10-6 -4 0 -0.5 Tj = 25 °C VDS = -5 V Output characteristics: drain current as a function of drain-source voltage; typical values Tj = 25 °C aaa-017222 RDS(on) (Ω) 8 -1.8 V -1.5 Sub-threshold drain current as a function of gate-source voltage aaa-017223 10 VGS = -1.5 V VGS (V) (1) minimum values (2) typical values (3) maximum values Fig. 8. 10 -1.0 RDS(on) (Ω) 8 -2.0 V 6 6 -2.5 V 4 4 -3.0 V -4.5 V 2 2 0 0 Tj = 150 °C Tj = 25 °C 0 -0.5 -1.0 -1.5 ID (A) -2.0 Tj = 25 °C Fig. 9. Product data sheet -1 -2 -3 -4 VGS (V) -5 ID = -0.4 A Drain-source on-state resistance as a function of drain current; typical values PMZB1200UPE 0 Fig. 10. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 15 PMZB1200UPE NXP Semiconductors 30 V, P-channel Trench MOSFET aaa-017224 -1.0 aaa-017225 2.0 ID (A) a -0.8 1.5 -0.6 1.0 -0.4 0.5 -0.2 0 Tj = 150 °C 0 Tj = 25 °C -1 -2 -3 VGS (V) 0 -60 -4 VDS > ID x RDSon Fig. 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values 60 120 180 aaa-017227 102 VGS(th) (V) Tj (°C) Fig. 12. Normalized drain-source on-state resistance as a function of ambient temperature; typical values aaa-017226 -1.5 0 (1) C (pF) -1.0 (1) 10 (2) (2) (3) (3) -0.5 0 -60 0 60 120 Tj (°C) 1 -10-1 180 -1 ID = -250 μA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (2) typical values (3) minimum values (1) Ciss Product data sheet VDS (V) -102 (2) Coss (3) Crss Fig. 13. Gate-source threshold voltage as a function of junction temperature PMZB1200UPE -10 Fig. 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 15 PMZB1200UPE NXP Semiconductors 30 V, P-channel Trench MOSFET aaa-017228 -5 VDS VGS (V) ID -4 VGS(pl) -3 VGS(th) VGS -2 QGS1 QGS2 QGS -1 QGD QG(tot) 017aaa137 0 0 0.2 0.4 0.6 QG (nC) Fig. 16. Gate charge waveform definitions 0.8 VDS = -15 V; ID = -410 mA Tamb = 25 °C Fig. 15. Gate-source voltage as a function of gate charge; typical values aaa-017229 -2.0 IS (A) -1.5 -1.0 -0.5 Tj = 150 °C 0 0 -0.4 Tj = 25 °C -0.8 -1.2 VSD (V) -1.6 VGS = 0 V Fig. 17. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 18. Duty cycle definition PMZB1200UPE Product data sheet All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 15 PMZB1200UPE NXP Semiconductors 30 V, P-channel Trench MOSFET 12. Package outline Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm L (2x) SOT883B L1 2 b (2x) 3 e b1 1 e1 A1 A E D 0 0.5 Dimensions Unit 1 mm scale A(1) A1 b b1 D E e e1 L L1 max 0.40 0.04 0.20 0.55 0.65 1.05 0.30 0.30 nom 0.37 0.15 0.50 0.60 1.00 0.35 0.65 0.25 0.25 min 0.34 0.12 0.47 0.55 0.95 0.22 0.22 mm Note 1. Including plating thickness Outline version sot883b_po References IEC JEDEC JEITA European projection Issue date 11-11-02 12-01-03 SOT883B Fig. 19. Package outline DFN1006B-3 (SOT883B) PMZB1200UPE Product data sheet All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 15 PMZB1200UPE NXP Semiconductors 30 V, P-channel Trench MOSFET 13. Soldering Footprint information for reflow soldering SOT883B 1.3 0.7 R0.05 (8x) 0.9 0.6 0.7 0.25 (2x) 0.3 (2x) 0.3 0.4 (2x) 0.4 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot883b_fr Fig. 20. Reflow soldering footprint for DFN1006B-3 (SOT883B) PMZB1200UPE Product data sheet All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 15 PMZB1200UPE NXP Semiconductors 30 V, P-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMZB1200UPE v.1 20150325 Product data sheet - - PMZB1200UPE Product data sheet All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 Test information ..................................................... 9 12 Package outline ................................................... 10 13 Soldering .............................................................. 11 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 25 March 2015 PMZB1200UPE Product data sheet All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 15 / 15