INTEGRATED CIRCUITS DATA SHEET TDA8571J 4 x 40 W BTL quad car radio power amplifier Preliminary specification File under Integrated Circuits, IC01 1998 Mar 13 Philips Semiconductors Preliminary specification 4 x 40 W BTL quad car radio power amplifier TDA8571J FEATURES GENERAL DESCRIPTION • Requires very few external components • Fixed gain The TDA8571J is a integrated class-B output amplifier contained in a 23-lead Single-In-Line (SIL) plastic power package. It contains four amplifiers in a BTL configuration, each with a gain of 34 dB. The output power is 4 × 40 W (EIAJ) into a 4 Ω load. • Diagnostic facility (distortion, short-circuit and temperature pre-warning) APPLICATIONS • High output power • Low output offset voltage • Good ripple rejection • The device is primarily developed for car radio applications. • Mode select switch (operating, mute and standby) • Load dump protection • Short-circuit safe to ground and to VP and across the load • Low power dissipation in any short-circuit condition • Thermally protected • Reverse polarity safe • Electrostatic discharge protection • No switch-on/switch-off plop • Flexible leads • Low thermal resistance • Pin compatible with the TDA8568Q, except for the gain. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VP operating supply voltage 6 14.4 18 V IORM repetitive peak output current − − 7.5 A Iq(tot) total quiescent current − 200 − mA Istb standby current − 0.2 100 µA Isw switch-on current − − 80 µA Zi input impedance 25 30 − kΩ Po(max) maximum output power THD = maximum − 40 − W SVRR supply voltage ripple rejection Rs = 0 Ω − 50 − dB αcs channel separation Rs = 10 kΩ − 50 − dB Gv(cl) closed-loop voltage gain 33 34 35 dB Vn(o) noise output voltage Rs = 0 Ω − − 170 µV VOS DC output offset voltage MUTE − − 80 mV ∆VOS delta DC output offset voltage ON ↔ MUTE − − 80 mV ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION TDA8571J DBS23P plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm) SOT411-1 1998 Mar 13 2 Philips Semiconductors Preliminary specification 4 x 40 W BTL quad car radio power amplifier TDA8571J BLOCK DIAGRAM handbook, full pagewidth IN1 MODE VP1 VP2 15 1 8 10 VP3 VP4 16 23 + 2 − OUT1+ 30 kΩ + 4 − IN2 OUT1− Vref 11 + 7 − OUT2+ 30 kΩ + SGND 12 TDA8571J IN3 5 − 13 DIAGNOSTIC + 9 17 − OUT2− VDIAG OUT3+ 30 kΩ + 19 − IN4 OUT3− Vref 14 + 22 − OUT4+ 30 kΩ + 20 − 3 PGND1 6 PGND2 18 21 PGND3 PGND4 Fig.1 Block diagram. 1998 Mar 13 3 OUT4− MGM562 Philips Semiconductors Preliminary specification 4 x 40 W BTL quad car radio power amplifier TDA8571J PINNING SYMBOL PIN DESCRIPTION VP1 1 supply voltage 1 OUT1+ 2 output 1+ PGND1 3 OUT1− OUT2− handbook, halfpage VP1 1 power ground 1 OUT1+ 2 4 output 1− PGND1 3 5 output 2− OUT1− 4 PGND2 6 power ground 2 OUT2− 5 OUT2+ 7 output 2+ VP2 8 supply voltage 2 PGND2 6 VDIAG 9 diagnostic output OUT2+ 7 IN1 10 input 1 VP2 8 IN2 11 input 2 VDIAG 9 SGND 12 signal ground IN1 10 IN3 13 input 3 IN2 11 IN4 14 input 4 MODE 15 mode select switch input VP3 16 supply voltage 3 OUT3+ 17 output 3+ PGND3 18 power ground 3 OUT3− 19 output 3− VP3 16 OUT4− 20 output 4− OUT3+ 17 PGND4 21 power ground 4 PGND3 18 OUT4+ 22 output 4+ VP4 23 supply voltage 4 SGND 12 TDA8571J IN3 13 IN4 14 MODE 15 OUT3− 19 OUT4− 20 PGND4 21 OUT4+ 22 VP4 23 MGM563 Fig.2 Pin configuration. 1998 Mar 13 4 Philips Semiconductors Preliminary specification 4 x 40 W BTL quad car radio power amplifier TDA8571J FUNCTIONAL DESCRIPTION SHORT-CIRCUIT DIAGNOSTIC The TDA8571J contains four identical amplifiers which can be used for bridge applications. The gain of each amplifier is fixed at 34 dB. When a short-circuit occurs at one or more outputs to ground or to the supply voltage, the output stages are switched off until the short-circuit is removed and the device is switched on again, with a delay of approximately 10 ms after removal of the short-circuit. During this short-circuit condition, pin 9 is continuously LOW. Mode select switch (pin 15) • Standby: low supply current (<100 µA) When a short-circuit occurs across the load of one or more channels, the output stages are switched off during approximately 10 ms. After that time it is checked during approximately 50 µs to determine whether the short-circuit is still present. Due to this duty cycle of 50 µs/10 ms the average current consumption during this short-circuit condition is very low. • Mute: input signal suppressed • Operating: normal on condition. Since this pin has a low input current (<80 µA), a low cost supply switch can be applied. To avoid switch-on plops, it is advised to keep the amplifier in the mute mode during ≥150 ms (charging of the input capacitors at pins 10, 11, 13 and 14). When switching from standby to mute, the slope should be at least 18 V/s. • External timing circuit (see Fig.3). During this short-circuit condition, pin 9 is LOW for 10 ms and HIGH for 50 µs (see Fig.5). The protection circuits of all channels are coupled. This means that if a short-circuit condition occurs in one of the channels, all channels are switched off. Consequently, the power dissipation in any short-circuit condition is very low. Diagnostic output (pin 9) TEMPERATURE PRE-WARNING DYNAMIC DISTORTION DETECTOR (DDD) When the virtual junction temperature Tvj reaches 145 °C, pin 9 goes LOW. This can be realized by: • Microprocessor control At the onset of clipping of one or more output stages, the dynamic distortion detector becomes active and pin 9 goes LOW. This information can be used to drive a sound processor or DC volume control to attenuate the input signal and so limit the distortion. The output level of pin 9 is independent of the number of channels that are clipping (see Fig.4). OPEN COLLECTOR OUTPUTS The diagnostic pin has an open collector output, so more devices can be tied together. An external pull-up resistor is needed. handbook, halfpage Vo MGG155 +V handbook, halfpage P 0 10 kΩ MODE 47 µF V9 BZX79C/3.9V VP MGD959 0 Fig.3 Mode select switch circuitry. 1998 Mar 13 t Fig.4 Distortion detector waveform. 5 Philips Semiconductors Preliminary specification 4 x 40 W BTL quad car radio power amplifier TDA8571J handbook, full pagewidthshort MGG156 circuit current t short-circuit over the load V9 10 ms VP t 50 µs Fig.5 Short-circuit waveform. 1998 Mar 13 6 Philips Semiconductors Preliminary specification 4 x 40 W BTL quad car radio power amplifier TDA8571J LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VP PARAMETER CONDITIONS supply voltage MIN. MAX. UNIT operating − 18 V non-operating − 30 V load dump protection; during 50 ms; tr ≥ 2.5 ms − 45 V Vsc(safe) short-circuit safe voltage − 18 V Vrp reverse polarity voltage − 6 V IOSM non-repetitive peak output current − 10 A IORM repetitive peak output current − 7.5 A Ptot total power dissipation − 60 W Tstg storage temperature −55 +150 °C Tamb operating ambient temperature −40 +85 °C Tvj virtual junction temperature − 150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 40 K/W Rth j-c thermal resistance from junction to case (see Fig.6) 1 K/W virtual junction handbook, halfpage OUT1 3.2 K/W OUT2 OUT3 3.2 K/W 3.2 K/W OUT4 3.2 K/W 0.2 K/W case MGG157 Fig.6 Equivalent thermal resistance network. 1998 Mar 13 7 Philips Semiconductors Preliminary specification 4 x 40 W BTL quad car radio power amplifier TDA8571J QUALITY SPECIFICATION In accordance with “SNW-FQ-0611E”. The number of the quality specification can be found in the “Quality Reference Handbook”. The handbook can be ordered using the code 9397 750 00192. DC CHARACTERISTICS VP = 14.4 V; Tamb = 25 °C; measured in Fig.7; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VP supply voltage note 1 6 14.4 18 V Iq(tot) quiescent current RL = ∞ − 200 360 mA 8.5 − Vp V Operating condition V15 mode select switch level I15 mode select switch current V15 = 14.4 V − 30 80 µA VO output voltage note 2 − 7.0 − V 3.3 − 6.4 V Mute condition V15 mode select switch level VO output voltage note 2 − 7.0 − V VOS DC output offset voltage MUTE − − 80 mV ∆VOS delta DC output offset voltage ON ↔ MUTE − − 80 mV Standby condition V15 mode select switch level 0 − 2 V Istb standby current − 0.2 100 µA Diagnostic V9 diagnostic output voltage during any fault condition − − 0.6 V Tvj temperature pre-warning V9 = 0.6 V − 145 − °C Notes 1. The circuit is DC adjusted at VP = 6 to 18 V and AC operating at VP = 8.5 to 18 V. 2. At 18 V < VP < 30 V the DC output voltage ≤ 1⁄2VP. 1998 Mar 13 8 Philips Semiconductors Preliminary specification 4 x 40 W BTL quad car radio power amplifier TDA8571J AC CHARACTERISTICS VP = 14.4 V; RL = 4 Ω; f = 1 kHz; Tamb = 25 °C; measured in Fig.7; unless otherwise specified. SYMBOL Po PARAMETER output power CONDITIONS MIN. TYP. MAX. UNIT THD = 0.5% 16 19 − W THD = 10% 21 26 − W VP = 13.7 V; THD = 0.5% − 17.5 − W VP = 13.7 V; THD = 10% − 23 − W 40 − W Po(max) maximum output power THD = maximum; Vi = 2 V (p-p) 34 square wave THD total harmonic distortion Po = 1 W − 0.1 − % V9 = 0.6 V; note 1 − 10 − % Bp power bandwidth THD = 0.5%; Po = −1 dB with respect to 16 W − 20 to 20000 − Hz fro(l) low frequency roll-off at −1 dB; note 2 − 25 − Hz fro(h) high frequency roll-off at −1 dB 20 − − kHz Gv(cl) closed-loop voltage gain 33 34 35 dB SVRR supply voltage ripple rejection on; Rs = 0 Ω; Vripple = Vripple(max) = 2 V (p-p) 40 − − dB mute; Rs = 0 Ω; Vripple = Vripple(max) = 2 V (p-p) 50 − − dB standby; Rs = 0 Ω; Vripple = Vripple(max) = 2 V (p-p) 80 − − dB 25 30 38 kΩ on; Rs = 0 Ω; B = 20 Hz to 20 kHz − 125 170 µV on; Rs = 10 kΩ; B = 20 Hz to 20 kHz − 150 − µV mute; B = 20 Hz to 20 kHz; independent of Rs − 100 − µV Po = 16 W; Rs = 10 kΩ 45 − − dB − − 1 dB − − 2 mV Zi input impedance Vn(o) noise output voltage αcs channel separation ∆Gv channel unbalance Vo output signal in mute Vi = Vi(max) = 1 V (RMS) Notes 1. Dynamic Distortion Detector (DDD) active, pin 9 is set to logic 0. 2. Frequency response externally fixed. 1998 Mar 13 9 Philips Semiconductors Preliminary specification 4 x 40 W BTL quad car radio power amplifier TDA8571J TEST AND APPLICATION INFORMATION VP handbook, full pagewidth +14.4 V MODE 15 IN1 input 1 VP1 VP2 VP3 VP4 1 8 16 23 10 + 470 nF 100 nF 2 2200 µF OUT1+ − RL = 4 Ω 30 kΩ + 4 OUT1− 7 OUT2+ − IN2 input 2 Vref 11 + 470 nF − RL = 4 Ω 30 kΩ + SGND IN3 OUT2− 9 VDIAG 17 OUT3+ − 12 10 kΩ TDA8571J input 3 5 13 DIAGNOSTIC + 470 nF +VP diagnostic output − RL = 4 Ω 30 kΩ + 19 OUT3− 22 OUT4+ − IN4 input 4 Vref 14 + 470 nF − RL = 4 Ω 30 kΩ + 20 OUT4− − 3 6 18 21 PGND1 PGND2 PGND3 PGND4 power ground (substrate) MGM564 Special care must be taken in the PCB-layout to separate pin 9 from the pins 10, 11 13 and 14 to minimize the crosstalk between the clip output and the inputs. To avoid switch-on plops, it is advised to keep the amplifier in the mute mode during a period of ≥ 150 ms (charging the input capacitors at pins 10, 11, 13 and 14). Fig.7 Application circuit diagram. 1998 Mar 13 10 Philips Semiconductors Preliminary specification 4 x 40 W BTL quad car radio power amplifier TDA8571J Test information Figures 8 to 13 have the following conditions: VP = 14.4 V; RL = 4 Ω; f = 1 kHz; 80 kHz filter used; unless otherwise specified. MGM566 300 MGM567 80 handbook, halfpage handbook, halfpage Po (W) IP (mA) 60 200 40 (1) 100 (2) 20 (3) 0 0 0 4 8 12 16 20 VP (V) 8 10 12 14 16 VP (V) 18 (1) EIAJ; 100 Hz. (2) THD + N = 10%. (3) THD + N = 0.5%. Fig.8 IP as a function of VP. Fig.9 Po as a function of VP. MGM568 10 MGM569 10 handbook, halfpage handbook, halfpage THD + N (%) THD + N (%) 1 1 (1) (1) (2) 10−1 10−1 (2) (3) 10−2 10−2 10−1 1 10 Po (W) 10−2 10 102 (1) f = 10 kHz. (2) f = 1 kHz. (3) f = 100 Hz. 103 104 f (Hz) 105 (1) Po = 1 W. (2) Po = 10 W. Fig.10 THD + N as a function of Po. 1998 Mar 13 102 Fig.11 THD + N as a function of frequency. 11 Philips Semiconductors Preliminary specification 4 x 40 W BTL quad car radio power amplifier TDA8571J MGM570 −20 MGM565 −30 handbook, halfpage handbook, halfpage SVRR (dB) αcs (dB) −40 −50 −60 −70 (1) (2) −80 10 102 103 104 f (Hz) −90 10 105 102 103 104 f (Hz) 105 (1) Between channels 1 and 2 or between channels 3 and 4. (2) Between channels 1 or 2 and channels 3 or 4. Fig.13 Channel separation as a function of frequency. Fig.12 SVRR as a function of frequency. 1998 Mar 13 12 Philips Semiconductors Preliminary specification 4 x 40 W BTL quad car radio power amplifier TDA8571J PCB layout 111.76 handbook, full pagewidth 78.74 Pgnd 100 nF 2200 µF − VP − − out 4 out1 + + 470 nF 470 nF − − out2 out 3 + 10 kΩ diag in 1 in sgnd 2 3 mode + 4 MGK079 Dimensions in mm. Fig.14 PCB layout (component side). 1998 Mar 13 13 Philips Semiconductors Preliminary specification 4 x 40 W BTL quad car radio power amplifier TDA8571J 111.76 handbook, full pagewidth 78.74 Pgnd 100nF 2200 µF − VP − − out 4 out1 + + 470 nF 470 nF − − out2 out 3 + mode in 4 in sgnd 3 2 diag + 10 kΩ 1 MGK080 Dimensions in mm. Fig.15 PCB layout (soldering side). 1998 Mar 13 14 Philips Semiconductors Preliminary specification 4 x 40 W BTL quad car radio power amplifier TDA8571J PACKAGE OUTLINE DBS23P: plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm) SOT411-1 non-concave Dh x D Eh view B: mounting base side d A2 β A5 A4 E2 B j E E1 L2 L3 L1 1 23 L e1 Z bp e c Q v M w M e2 m 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A 2 mm A4 A5 bp c D (1) d D h E (1) e e1 e2 12.2 4.6 1.15 1.65 0.75 0.55 30.4 28.0 12 2.54 1.27 5.08 11.8 4.3 0.85 1.35 0.60 0.35 29.9 27.5 Eh E1 E2 j L L1 L2 L3 m Q v w x β Z (1) 6 10.15 6.2 1.85 3.6 14.0 10.7 2.4 4.3 2.1 0.6 0.25 0.03 45° 1.43 9.85 5.8 1.65 2.8 13.0 9.9 1.6 0.78 1.8 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 96-10-11 98-02-20 SOT411-1 1998 Mar 13 EUROPEAN PROJECTION 15 Philips Semiconductors Preliminary specification 4 x 40 W BTL quad car radio power amplifier TDA8571J The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. Repairing soldered joints Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). Soldering by dipping or by wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Mar 13 16 Philips Semiconductors Preliminary specification 4 x 40 W BTL quad car radio power amplifier TDA8571J NOTES 1998 Mar 13 17 Philips Semiconductors Preliminary specification 4 x 40 W BTL quad car radio power amplifier TDA8571J NOTES 1998 Mar 13 18 Philips Semiconductors Preliminary specification 4 x 40 W BTL quad car radio power amplifier TDA8571J NOTES 1998 Mar 13 19 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 545102/1200/01/pp20 Date of release: 1998 Mar 13 Document order number: 9397 750 03261