INTEGRATED CIRCUITS DATA SHEET TDA8512J 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier Preliminary specification File under Integrated Circuits, IC01 2001 Nov 16 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier TDA8512J CONTENTS 1 FEATURES 2 APPLICATIONS 3 GENERAL DESCRIPTION 4 QUICK REFERENCE DATA 5 ORDERING INFORMATION 6 BLOCK DIAGRAM 7 PINNING 8 FUNCTIONAL DESCRIPTION 8.1 8.2 8.3 8.4 Mode select switch Mode select Built-in protection circuits Short-circuit protection 9 LIMITING VALUES 10 HANDLING 11 THERMAL CHARACTERISTICS 12 DC CHARACTERISTICS 13 AC CHARACTERISTICS 14 APPLICATION INFORMATION 14.1 14.2 14.3 14.4 14.5 14.6 14.7 Input configuration Output power Power dissipation Supply Voltage Ripple Rejection (SVRR) Switch-on and switch-off PCB layout and grounding Typical performance characteristics 2001 Nov 16 15 PACKAGE OUTLINE 16 SOLDERING 16.1 Introduction to soldering through-hole mount packages Soldering by dipping or by solder wave Manual soldering Suitability of through-hole mount IC packages for dipping and wave soldering methods 16.2 16.3 16.4 2 17 DATA SHEET STATUS 18 DEFINITIONS 19 DISCLAIMERS Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier 1 TDA8512J • Flexible leads FEATURES • Requires very few external components • Low thermal resistance • High output power • Identical inputs: inverting and non-inverting. • Low output offset voltage Bridge-Tied Load (BTL) channel 2 • Fixed gain • Multimedia systems • Good ripple rejection • Active speaker systems (stereo with sub woofer or QUAD). • Mode select switch: operating, mute and standby APPLICATIONS • Short-circuit safe to ground and across load • Low power dissipation in any short-circuit condition 3 • Thermally protected The TDA8512J is an integrated class-B output amplifier in a 17-lead Single-In-Line (SIL) power package. It contains 4 × 13 W Single Ended (SE) amplifiers of which two can be used to configure a 26 W BTL amplifier. • Reverse polarity safe • Electrostatic discharge protection • No switch-on and switch-off plops 4 GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT General VP supply voltage 6 15 18 V IORM repetitive peak output current − − 4 A Iq(tot) total quiescent current − 80 Istb standby current − 0.1 100.0 µA RL = 4 Ω; THD = 10% − 26 − W 46 − − dB Rs = 0 Ω − 70 − µV mA BTL channel output power Po SVRR supply voltage ripple rejection Vn(o) noise output voltage Zi input impedance 25 − − kΩ ∆VOO DC output offset voltage − − 150 mV RL = 4 Ω − 7.0 − W RL = 2 Ω − 13.0 − W 46 − − dB − 50 − µV 50 − − kΩ SE channels Po output power THD = 10% SVRR supply voltage ripple rejection Vn(o) noise output voltage Zi input impedance 5 Rs = 0 Ω ORDERING INFORMATION TYPE NUMBER TDA8512J 2001 Nov 16 PACKAGE NAME DESCRIPTION VERSION DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1 3 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier 6 TDA8512J BLOCK DIAGRAM VP1 handbook, full pagewidth VP2 5 INV1 1 mute switch 13 Cm 60 kΩ 6 VA OUT1 2 kΩ power stage 18 kΩ INV2 3 mute switch Cm 60 kΩ 8 VA OUT2 2 kΩ power stage 18 kΩ VP TDA8512J 14 standby switch MODE standby reference voltage VA 15 kΩ PROTECTIONS thermal short-circuit mute switch x1 RR INV3 INV3 4 15 kΩ 16 mute reference voltage mute switch Cm 60 kΩ 15 10 VA OUT3 2 kΩ power stage 18 kΩ INV4 17 mute switch Cm 60 kΩ 12 VA REF 9 2 kΩ input reference voltage power stage 18 kΩ 2 7 11 MGW426 SGND GND1 GND2 Fig.1 Block diagram. 2001 Nov 16 4 OUT4 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier 7 TDA8512J PINNING SYMBOL PIN DESCRIPTION INV1 1 non-inverting input 1 SGND 2 signal ground INV2 3 non-inverting input 2 RR 4 supply voltage ripple rejection VP1 5 supply voltage 1 OUT1 6 output 1 GND1 7 OUT2 INV1 1 SGND 2 INV2 3 RR 4 VP1 5 power ground 1 OUT1 6 8 output 2 GND1 7 REF 9 reference voltage input OUT2 8 OUT3 10 output 3 REF 9 GND2 11 power ground 2 OUT4 12 output 4 VP2 13 supply voltage 2 MODE 14 mode select switch input INV3 15 inverting input 3 INV3 16 non-inverting input 3 MODE 14 INV4 17 non-inverting input 4 INV3 15 TDA8512J OUT3 10 GND2 11 OUT4 12 VP2 13 INV3 16 INV4 17 MGW427 Fig.2 Pin configuration. 2001 Nov 16 5 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier 8 TDA8512J 8.2 FUNCTIONAL DESCRIPTION For the 3 functional modes; standby, mute and operate, the pin MODE can be driven by a 3-state logic output stage: e.g. microcontroller with some extra components for DC level shifting. (see Fig.10). The TDA8512J contains four identical amplifiers and can be used in the configurations: • Two SE channels (fixed gain 20 dB) and one BTL channel (fixed gain 26 dB) • Four SE channels. Standby mode will be activated by a applying a low DC level between 0 and 2 V. The power consumption of the device will be reduced to less than 1.5 mW. The input and output pins are floating: high impedance condition. (RL depends on the application). 8.1 Mode select Mode select switch Mute mode will be activated by a applying a DC level between 3.3 and 6.4 V. The outputs of the amplifier will be muted (no audio output); however, the amplifier is DC biased and the DC level of the input and output pins stays on half the supply voltage. A special feature of the TDA8512J device is the mode select switch (pin MODE), offering: • Low standby current (<100 µA) • Low switching current (low cost supply switch) • Mute facility. Operating mode is obtained at a DC level between 8.5 V and VP. To avoid switch-on plops, it is advised to keep the amplifier in the mute mode for longer than 100 ms to allow charging of the input capacitors at pins INV1, INV2, INV3, INV3 and INV4. This can be achieved by: 8.3 Built-in protection circuits • Control via a microcontroller The device contains both a thermal protection, and a short-circuit protection. • An external timing circuit (see Fig.3). Thermal protection: The circuit slowly ramps up the voltage at the pin MODE when switching on, and results in fast muting when switching off. The junction temperature is measured by a temperature sensor; at a junction temperature of about 160 °C this detection circuit switches off the power stages. Short-circuit protection (outputs to ground, supply and across the load): handbook, halfpage VP 10 kΩ 47 µF Short-circuit is detected by a so called Maximum Current Detection circuit, which measures the current in the positive, respectively negative supply line of each power stage. At currents exceeding (typical) 6 A, the power stages are switched off during some ms. 100 Ω mode select switch 8.4 When a short-circuit during operation to either GND or across the load of one or more channels occurs, the output stages are switched off for approximately 20 ms. After that time, it is checked during approximately 50 µs to see whether the short-circuit is still present. Due to this duty factor of 50 µs per 20 ms, the average supply current is very low during this short-circuit (approximately 40 mA, see Fig.4). 100 kΩ MGA708 Fig.3 Mode select switch circuitry. 2001 Nov 16 Short-circuit protection 6 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier TDA8512J handbook, full pagewidth I(A) 20 ms MGW430 current in output stage t (s) short-circuit 50 µs Fig.4 Short-circuit wave form. 9 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VP PARAMETER supply voltage CONDITIONS MIN. MAX. UNIT operating − 18 V no signal − 21 V − 6 A − 4 A − 18 V IOSM non-repetitive peak output current IORM repetitive peak output current Vsc short-circuit safe voltage Vrp reverse polarity voltage − 6 V Ptot total power dissipation − 60 W Tstg storage temperature −55 +150 °C Tamb ambient temperature −40 +85 °C Tvj virtual junction temperature − 150 °C operating; note 1 Note 1. To ground and across load. 10 HANDLING ESD protection of this device complies with the Philips’ General Quality Specification (GQS). 2001 Nov 16 7 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier TDA8512J 11 THERMAL CHARACTERISTICS In accordance with IEC 60747-1. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient in free air 40.0 K/W Rth(j-c) thermal resistance from junction to case see Fig.5 1.3 K/W The measured thermal resistance of the IC-package (Rth(j-c)) is maximum 1.3 K/W if all four channels are driven. For a maximum ambient temperature of 60 °C and VP = 15 V, the following calculation for the heatsink can be made: For the application two SE outputs with 2 Ω load, the measured worst-case sine-wave dissipation is 2 × 7 W For the application BTL output with 4 Ω load, the worst-case sine-wave dissipation is 12.5 W. So the total power dissipation is Pd(tot) = 2 × 7 + 12.5 W = 26.5 W. At Tj(max) = 150 °C the temperature increase, caused by the power dissipation, is: ∆T = 150 °C − 60 °C = 90 °C. 90 So Pd(tot) × Rth(tot) = ∆T = 90 K. As a result: R th ( tot ) = ----------- = 3.4 K/W which means: 26.5 Rth(hs) = Rth(tot) − Rth(j-c) = 3.4 − 1.3 = 2.1 K/W. The above calculation is for application at worst-case (stereo) sine-wave output signals. In practice, music signals will be applied. In that case the maximum power dissipation will be about the half the sine-wave power dissipation, which allows the use of a smaller heatsink. 90 So Pd(tot) × Rth(tot) = ∆T = 90 K. As a result: R th ( tot ) = --------------- = 6.8 K/W which means: 13.25 Rth(hs) = Rth(tot) − Rth(j-c) = 6.8 − 1.3 = 5.5 K/W. handbook, halfpage output 1 3.0 K/W virtual junction output 3 output 2 3.0 K/W 3.0 K/W output 4 3.0 K/W 0.7 K/W 0.7 K/W MEA860 - 2 0.2 K/W case Fig.5 Equivalent thermal resistance network. 2001 Nov 16 8 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier TDA8512J 12 DC CHARACTERISTICS VP = 15 V; Tamb = 25 °C; measured according to Figs 6 and 7; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VP supply voltage Iq(tot) VO ∆VOO DC output offset voltage note 1 6 15 18 total quiescent current − 80 160 mA DC output voltage − 6.9 − V − − 150 mV 8.5 − − V note 2 V Mode select switch switch-on voltage Vsw(on) Mute condition V mute voltage 3.3 − 6.4 V VO output voltage Vi(max) = 1 V; fi = 1 kHz − − 2 mV ∆VOO DC output offset voltage note 2 − − 150 mV Standby condition Vstb standby voltage 0 − 2 V Istb standby current − − 100 µA Isw(on) switch-on current − 12 40 µA Notes 1. The circuit is DC adjusted at VP = 6 to 18 V and AC operating at VP = 8.5 to 18 V. 2. Only for BTL channel (VOUT4 − VOUT3). 13 AC CHARACTERISTICS VP = 15 V; fi = 1 kHz; Tamb = 25 °C; bandpass 22 Hz to 22 kHz; measured according to Figs 6 and 7; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BTL channel Po output power RL2 = 4 Ω (see Fig.7); note 1 THD = 0.5% 16 20 − W THD = 10% 22 26 − W − % THD total harmonic distortion Po = 1 W − 0.06 BP power bandwidth THD = 0.5%; Po = −1 dB with respect to 17 W − 20 to 15000 − Hz fro(l) low frequency roll-off at −1 dB; note 2 − 25 − Hz fro(h) high frequency roll-off at −1 dB 20 − − kHz GV closed loop voltage gain 25 26 27 dB SVRR supply voltage ripple rejection operating 48 − − dB mute 46 − − dB standby 80 − − dB 2001 Nov 16 note 3; 9 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier SYMBOL TDA8512J PARAMETER Zi input impedance Vn(o) noise output voltage CONDITIONS MIN. TYP. MAX. UNIT 25 30 38 kΩ operating; Rs = 0 Ω; note 4 − 70 − µV operating; Rs = 10 kΩ; note 4 − 100 200 µV mute; notes 4 and 5 − 60 − µV THD = 0.5% 8.0 10.0 − W THD = 10% 11.0 13.0 − W THD = 0.5% − 5.5 − W THD = 10% SE channels Po output power RL1 = 2 Ω (see Fig.7); note 1 RL1 = 4 Ω (see Fig.7); note 1 − 7.0 − W THD total harmonic distortion Po = 1 W − 0.06 − % fro(l) low frequency roll-off at −1 dB; note 2 − 25 − Hz fro(h) high frequency roll-off at −1 dB 20 − − kHz Gv closed loop voltage gain 19 20 21 dB SVRR supply voltage ripple rejection operating 48 − − dB mute 46 − − dB standby 80 − − dB 50 60 75 kΩ Zi input impedance Vn(o) noise output voltage αcs channel separation ∆GV channel unbalance note 3; operating; Rs = 0 Ω; note 4 − 50 − µV operating; Rs = 10 kΩ; note 4 − 70 100 µV mute; notes 4 and 5 − 50 − µV Rs = 10 kΩ 40 60 − dB − − 1 dB Notes 1. Output power is measured directly at the output pins of the device. 2. Frequency response externally fixed. 3. Ripple rejection measured at the output with a source impedance of 0 Ω; maximum ripple of 2 V (p-p) and at a frequency between 100 Hz to 10 kHz. 4. Noise measured in a bandwidth of 20 Hz to 20 kHz. 5. Noise output voltage independant of Rs (Vi = 0 V). 2001 Nov 16 10 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier TDA8512J For suppressing higher frequency transients (spikes) on the supply line a capacitor with low ESR (typical 0.1 µF) has to be placed as close as possible to the device. For suppressing lower frequency noise and ripple signals, a large electrolytic capacitor (e.g.1000 µF or more) must be placed close to the device. 14 APPLICATION INFORMATION 14.1 Input configuration • Inputs 1 and 2 are used for SE application on pin OUT1, respectively pin OUT2 • Input 3 can be configured for both SE and BTL application The bypass capacitor on the pin RR reduces the noise and ripple on the mid rail voltage. For good THD and noise performance, a low ESR capacitor is recommended. • Input 4 can be used for SE application of pin OUT4, or for BTL application together with input 3. See Figs 6 and 7. 14.5 Note that the DC level of all input pins is half the supply voltage VP, so coupling capacitors for the input pins are necessary! To avoid audible plops during switching on and switching off the supply voltage, the pin MODE has to be set in standby condition (<2V) before the voltage is applied (switch-on) or removed (switch-off). Via the mute mode, the input- and SVRR-capacitors are smoothly charged. Cut-off frequency for the input is: fi(co) = 12 Hz. Therefore it is not necessary to use high capacitor values on the input; so the delay during switch-on, which is necessary for charging the input capacitors, can be minimised. This results in a good low frequency response and good switch-on behaviour. 14.2 The turn-on and turn-off time can be influenced by an RC-circuit on the pin MODE (see Fig.3). Rapidly switching on and off of the device or the pin MODE, may cause “click and pop” noise. This can be prevented by a proper timing on the pin MODE. Output power The output power versus supply voltage has been measured on the output pins of one channel, and at THD = 10%. The maximum output power is limited by the maximum supply voltage of 18 V and the maximum available output current: 4 A repetitive peak current. 14.3 14.6 Power dissipation Supply Voltage Ripple Rejection (SVRR) The SVRR is measured with an electrolytic capacitor of 100 µF on pin RR and at a bandwidth of 10 Hz to 80 kHz, whereas the lowest frequencies can be lower than 10 Hz. Proper supply bypassing is critical for low noise performance and high power supply rejection. The respective capacitor locations should be as close to the device as possible, and grounded to the power ground. A proper power supply decoupling also prevents oscillations. 2001 Nov 16 PCB layout and grounding For high system performance level certain grounding techniques are imperative. The input reference grounds have to be tied with their respective source grounds, and must have separate traces from the power ground traces; this will separate the large (output) signal currents from interfering with the small AC input signals. The small-signal ground traces should be physically located as far as possible from the power ground traces. Supply- and output-traces should be as wide as practical for delivering maximum output power. The PCB layout, which accommodates the TDA8510, TDA8511, and TDA8512 products, is shown in Fig.8. The power dissipation graphs are given for one output channel in SE, respectively BTL application. So for total worst-case power dissipation the Pd of each channel must be added up. 14.4 Switch-on and switch-off 11 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier TDA8512J VP handbook, full pagewidth 100 nF MODE VP1 VP2 14 5 13 2200 µF TDA8512J 1 kΩ (1) INV1 1 input 1 6 OUT1 220 nF Cout(2) 60 kΩ RL 8 OUT2 1 kΩ (1) INV2 3 input 2 220 nF Cout(2) 60 kΩ SGND 2 RL reference voltage REF 9 INV3 15 1 kΩ (1) 60 kΩ INV3 16 input 3 10 OUT3 Cout(2) 220 nF RL 60 kΩ 12 OUT4 1 kΩ (1) INV4 17 input 4 supply voltage ripple rejection 220 nF Cout(2) RR 100 µF 4 RL 1/2VP 7 11 GND1 GND2 MGW429 (1) Advised when driven with hard clipping input signals. (2) For frequencies down to 20 Hz: Cout = 4700 µF at RL = 2 Ω. Cout = 2200 µF at RL = 4 Ω. Fig.6 Application diagram for four SE amplifiers. 2001 Nov 16 12 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier TDA8512J VP handbook, full pagewidth 100 nF MODE VP1 VP2 14 5 13 2200 µF TDA8512J 1 kΩ (1) INV1 1 input 1 6 OUT1 220 nF Cout(2) 60 kΩ R L1 8 OUT2 1 kΩ (1) INV2 3 input 2 220 nF Cout(2) 60 kΩ SGND 2 R L1 reference voltage REF 9 INV3 16 60 kΩ INV3 15 inputs 3 and 4 1 kΩ (1) 10 OUT3 R L2 4Ω 60 kΩ 470 nF 12 OUT4 INV4 17 RR 100 µF 4 1/2VP 7 11 GND1 GND2 MGW428 (1) Advised when driven with hard clipping input signals. (2) For frequencies down to 20 Hz: Cout = 4700 µF at RL1 = 2 Ω. Cout = 2200 µF at RL1 = 4 Ω. Fig.7 Application diagram for one BTL amplifier and two SE amplifiers. 2001 Nov 16 13 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier handbook, full pagewidth TDA8512J 78 mm 55 mm a. Top view copper layout. TDA8510 TDA8511 TDA8512 Diag 100 µF 220 nF 4700 µF 100 nF 470 nF out 2 2200 µF out 3 47 µF 4700 µF 10 kΩ out 1 out 4 off S-Gnd 1 IN 2 Gnd VP on 4 IN 3 mode MGW520 b. Top view component layout. Fig.8 Printed-circuit board layout. 2001 Nov 16 14 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier 14.7 TDA8512J Typical performance characteristics MGW431 MGW432 4 Vo 10 handbook, halfpage 120 q (mA) 100 handbook, halfpage I (mV) 103 102 80 10 60 1 (1) 40 10 −1 20 10 −2 (2) 10 −3 0 7 9 11 13 15 17 VP (V) 0 19 2 4 6 8 VMODE (V) 10 (1) BTL mode. (2) SE mode. Fig.9 Quiescent current as a function of supply voltage; measured without load. Fig.10 Output voltage as a function of mode select voltage. MGW434 MGW433 10 10 handbook, halfpage handbook, halfpage THD (%) THD (%) 1 1 (1) (1) 10 −1 10 −1 (2) (2) (3) 10 −2 10 −2 SE mode. (1) fi = 10 kHz. 10 −1 (3) 1 10 Po (W) 10 −2 10 −2 102 (2) fi = 1 kHz. (3) fi = 100 Hz. SE mode. (1) fi = 10 kHz. Fig.11 THD as a function of output power at RL = 2 Ω. 2001 Nov 16 10 −1 1 10 Po (W) 102 (2) fi = 1 kHz. (3) fi = 100 Hz. Fig.12 THD as a function of output power at RL = 4 Ω. 15 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier TDA8512J MGW436 0 MGW435 10 handbook, halfpage handbook, halfpage SVRR (dB) THD (%) −20 1 −40 (1) 10 −1 (2) (1) −60 (3) (2) (4) −80 10 −2 10 −1 1 SE mode. (1) Mute mode channel 2. (2) Mute mode channel 1. 10 fi (kHz) 10 −2 10 −2 102 (3) Operating mode channel 2. (4) Operating mode channel 1. 10 −1 1 10 102 SE mode. (1) RL = 4 Ω. (2) RL = 2 Ω. Fig.13 SVRR as a function of frequency at VREF = 1 V; no bandpass applied. Fig.14 THD as a function of frequency at Po = 1 W; no bandpass applied. MGW444 MGW443 0 fi (kHz) 20 handbook, halfpage handbook, halfpage αcs (dB) Po (W) 16 −20 (1) (2) 12 −40 (3) 8 (4) −60 4 −80 10 −2 10 −1 1 10 fi (kHz) 0 102 5 10 15 VP (V) 20 (3) RL = 4 Ω; THD = 10%. (4) RL = 4 Ω; THD = 0.5%. SE mode. SE mode. (1) RL = 2 Ω; THD = 10%. (2) RL = 2 Ω; THD = 0.5%. Fig.15 Channel separation as a function of frequency; no bandpass applied. Fig.16 Output power as a function of supply voltage. 2001 Nov 16 16 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier TDA8512J MGW446 MGW445 12 10 handbook, halfpage handbook, halfpage Pd Pd (W) (W) 10 8 (1) 8 6 (1) 6 (2) 4 (2) 4 2 2 0 0 0 4 8 12 Po (W) 5 16 10 15 VP (V) 20 SE mode. (1) RL = 2 Ω. (2) RL = 4 Ω. SE mode. (1) RL = 2 Ω. (2) RL = 4 Ω. Fig.17 Power dissipation as a function of output power at VP = 15 V. Fig.18 Power dissipation as a function of supply voltage. MGW447 4 MGW448 4 handbook, halfpage handbook, halfpage BP (dB) BP (dB) 2 2 0 0 −2 −2 −4 10 −2 10 −1 1 10 fi (kHz) −4 10 −2 102 10 −1 1 10 fi (kHz) SE mode. VP = 15 V; RL = 2 Ω. Po = 8.5 W; THD = 0.5%. BTL mode. VP = 15 V; RL = 4 Ω. Po = 17 W; THD = 0.5%. Fig.19 Power bandwidth as a function of frequency; no bandpass applied. Fig.20 Power bandwidth as a function of frequency; no bandpass applied. 2001 Nov 16 17 102 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier TDA8512J MGW437 10 MGW438 10 handbook, halfpage handbook, halfpage THD (%) THD (%) 1 1 (1) 10 −1 10 −1 (2) (3) 10 −2 10 −2 10 −1 1 10 Po (W) 10 −2 10 −2 102 (2) fi = 1 kHz. (3) fi = 100 Hz. BTL mode. (1) fi = 10 kHz. 10 −1 1 10 102 BTL mode. Po = 1 W; RL = 4 Ω. Fig.21 THD as a function of output power at RL = 4 Ω. Fig.22 THD as a function of frequency; no bandpass applied. MGW440 MGW439 0 fi (kHz) 40 handbook, halfpage handbook, halfpage (1) Po (W) SVRR (dB) −20 30 (2) −40 (3) 20 (4) −60 10 (1) (2) −80 10 −2 10 −1 0 1 10 fi (kHz) 102 5 10 15 VP (V) 20 (3) RL = 8 Ω; THD = 10%. (4) RL = 8 Ω; THD = 0.5%. BTL mode. (1) Operating. (2) Mute. BTL mode. (1) RL = 4 Ω; THD = 10%. (2) RL = 4 Ω; THD = 0.5%. Fig.23 SVRR as a function of frequency at VREF = 1 V; no bandpass applied. Fig.24 Output power as a function of supply voltage. 2001 Nov 16 18 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier TDA8512J MGW441 MGW442 20 16 handbook, halfpage handbook, halfpage Pd (W) 16 Pd (W) (1) 12 (1) 12 8 (2) 8 (2) 4 4 0 0 0 10 20 Po (W) 30 5 10 15 VP (V) 20 BTL mode. (1) RL = 4 Ω. (2) RL = 8 Ω. BTL mode. (1) RL = 4 Ω. (2) RL = 8 Ω. Fig.25 Power dissipation as a function of output power at VP = 15 V. Fig.26 Power dissipation as a function of supply voltage. 2001 Nov 16 19 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier TDA8512J 15 PACKAGE OUTLINE DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1 non-concave Dh x D Eh view B: mounting base side d A2 B j E A L3 L Q c 1 v M 17 e1 Z bp e e2 m w M 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A2 bp c D (1) d Dh E (1) e mm 17.0 15.5 4.6 4.4 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 12.2 11.8 2.54 e1 e2 1.27 5.08 Eh j L L3 m Q v w x Z (1) 6 3.4 3.1 12.4 11.0 2.4 1.6 4.3 2.1 1.8 0.8 0.4 0.03 2.00 1.45 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-12-16 99-12-17 SOT243-1 2001 Nov 16 EUROPEAN PROJECTION 20 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier TDA8512J The total contact time of successive solder waves must not exceed 5 seconds. 16 SOLDERING 16.1 Introduction to soldering through-hole mount packages The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. This text gives a brief insight to wave, dip and manual soldering. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board. 16.2 16.3 Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. Soldering by dipping or by solder wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joints for more than 5 seconds. 16.4 Manual soldering Suitability of through-hole mount IC packages for dipping and wave soldering methods SOLDERING METHOD PACKAGE DIPPING DBS, DIP, HDIP, SDIP, SIL WAVE suitable(1) suitable Note 1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. 2001 Nov 16 21 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier TDA8512J 17 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 18 DEFINITIONS 19 DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 Nov 16 22 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier TDA8512J NOTES 2001 Nov 16 23 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA73 © Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 753503/01/pp24 Date of release: 2001 Nov 16 Document order number: 9397 750 08677