INTEGRATED CIRCUITS DATA SHEET TDA8561Q 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier Product specification Supersedes data of 1997 Sep 22 File under Integrated Circuits, IC01 1999 Jun 30 Philips Semiconductors Product specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier TDA8561Q FEATURES • Reverse polarity safe • Requires very few external components • Electrostatic discharge protection • High output power • No switch-on/switch-off plop • Flexibility in use; Quad single-ended or stereo BTL • Flexible leads • Low output offset voltage • Low thermal resistance • Fixed gain • Identical inputs (inverting and non-inverting). • Diagnostic facility (distortion, short-circuit and temperature detection) GENERAL DESCRIPTION • Good ripple rejection The TDA8561Q is an integrated class-B output amplifier in a 17-lead single-in-line (SIL) power package. It contains 4 × 12 W Single-Ended (SE) or 2 × 24 W Bridge-Tied Load (BTL) amplifiers. • Mode select switch (operating, mute and standby) • Load dump protection • AC and DC short-circuit safe to ground and to VP The device is primarily developed for car radio applications. • Low power dissipation in any short-circuit condition • Thermally protected QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VP positive operating supply voltage 6 14.4 18 V IORM repetitive peak output current − − 4 A IP total quiescent current − 80 − mA Isb standby current − 0.1 100 µA − 24 − W 46 − − dB − 70 − µV Stereo BTL application RL = 4 Ω; THD = 10% Po output power RR supply voltage ripple rejection Vno noise output voltage ZI input impedance 25 − − kΩ ∆VO| DC output offset voltage − − 150 mV RL = 4 Ω − 7 − W RL = 2 Ω − 12 − W 46 − − dB − 50 − µV 50 − − kΩ Rs = 0 Ω Quad single-ended application Po output power RR supply voltage ripple rejection Vno noise output voltage ZI input impedance THD = 10% Rs = 0 Ω ORDERING INFORMATION TYPE NUMBER TDA8561Q 1999 Jun 30 PACKAGE NAME DESCRIPTION DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) 2 VERSION SOT243-1 Philips Semiconductors Product specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier TDA8561Q BLOCK DIAGRAM V P1 5 non-inverting input 1 1 mute switch VP2 13 Cm 60 kΩ TDA8561Q 6 VA output 1 2 kΩ 18 kΩ power stage mute switch inverting input 2 Cm 60 kΩ 3 8 VA output 2 2 kΩ 18 kΩ power stage VP stand-by switch 15 kΩ PROTECTIONS thermal short-circuit 16 diagnostic output mute switch x1 non-inverting input 4 mode select switch stand-by reference voltage VA supply voltage ripple rejection 14 4 15 kΩ mute reference voltage Cm mute switch 17 60 kΩ 12 VA output 4 2 kΩ 18 kΩ power stage mute switch inverting input 3 Cm 60 kΩ 15 10 VA 2 kΩ 2 ground (signal) input reference voltage 18 kΩ power stage 9 7 11 GND1 GND2 not connected power ground (substrate) Fig.1 Block diagram. 1999 Jun 30 3 MEA858 - 1 output 3 Philips Semiconductors Product specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier TDA8561Q PINNING SYMBOL PIN DESCRIPTION −INV 1 1 non-inverting input 1 GND(S) 2 signal ground INV 2 3 inverting input 2 INV 1 1 GND(S) 2 INV 2 3 RR 4 V P1 5 RR 4 supply voltage ripple rejection VP1 5 supply voltage OUT 1 6 output 1 GND1 7 power ground 1 OUT 2 8 output 2 OUT 1 6 n.c. 9 not connected GND1 7 OUT 3 10 output 3 OUT 2 8 GND2 11 power ground 2 n.c. 9 OUT 4 12 output 4 VP2 13 supply voltage MODE 14 mode select switch input INV 3 15 inverting input 3 VDIAG 16 diagnostic output −INV 4 17 non-inverting input 4 TDA8561Q OUT 3 10 GND2 11 OUT 4 12 V P2 13 MODE 14 INV 3 15 V DIAG 16 INV 4 17 MEA859 - 1 Fig.2 Pin configuration. 1999 Jun 30 4 Philips Semiconductors Product specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier TDA8561Q During this short-circuit condition, pin 16 is LOW for 20 ms and HIGH for 50 µs (see Fig.5). FUNCTIONAL DESCRIPTION The TDA8561Q contains four identical amplifiers and can be used for Single-Ended (SE) or Bridge-Tied Load (BTL) applications. The gain of each amplifier is fixed at 20 dB (26 dB in BTL). Special features of the device are: The power dissipation in any short-circuit condition is very low. Mode select switch (pin 14) • Low standby current (<100 µA) • Low switching current (low cost supply switch) MGA705 handbook, halfpage VO • Mute facility. 0 To avoid switch-on plops, it is advised to keep the amplifier in the mute mode during ≥100 ms (charging of the input capacitors at pins 1, 3, 15 and 17). This can be achieved by: V16 VP • Microcontroller control • External timing circuit (see Fig.11). 0 t Diagnostic output (pin 16) DYNAMIC DISTORTION DETECTOR (DDD) Fig.3 At the onset of clipping of one or more output stages, the dynamic distortion detector becomes active and pin 16 goes LOW. This information can be used to drive a sound processor or DC volume control to attenuate the input signal and thus limit the distortion. The output level of pin 16 is independent of the number of channels that are clipping (see Figs 3 and 4). handbook, halfpage VO SHORT-CIRCUIT PROTECTION MGA706 0 When a short-circuit occurs at one or more outputs to ground or to the supply voltage, the output stages are switched off until the short-circuit is removed and the device is switched on again, with a delay of approximately 20 ms, after removal of the short-circuit. During this short-circuit condition, pin 16 is continuously LOW. V16 VP 0 When a short-circuit across the load of one or both channels occurs the output stages are switched off for approximately 20 ms. After that time it is checked during approximately 50 µs to see whether the short-circuit is still present. Due to this duty cycle of 50 µs/20 ms the average current consumption during this short-circuit condition is very low (approximately 40 mA). 1999 Jun 30 Distortion detector waveform; BTL application. Fig.4 5 t Distortion detector waveform; single-ended application. Philips Semiconductors Product specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier TDA8561Q handbook, full pagewidthcurrent MGL214 in output stage V16 t short-circuit over the load 20 ms VP t 50 µs Fig.5 Short-circuit waveform. TEMPERATURE DETECTION When the virtual junction temperature Tvj reaches 150 °C, pin 16 will be active LOW. OPEN-COLLECTOR OUTPUT Pin 16 is an open-collector output, which allows pin 16 of more devices being tied together. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL vP PARAMETER CONDITIONS MIN. MAX. UNIT positive supply voltage operating non-operating load dump protection during 50 ms; tr ≥ 2.5 ms − 18 V − 30 V − 45 V IOSM non-repetitive peak output current − 6 A IORM repetitive peak output current − 4 A Tstg storage temperature −55 +150 °C Tamb operating ambient temperature −40 +85 °C Tvj virtual junction temperature − 150 °C Vpsc AC and DC short-circuit safe voltage − 18 V Vpr reverse polarity − 6 V Ptot total power dissipation − 60 W 1999 Jun 30 6 Philips Semiconductors Product specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier TDA8561Q THERMAL CHARACTERISTICS In accordance with IEC 747-1. SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 40 K/W Rth j-c thermal resistance from junction to case (see Figs 6 and 7) 1.3 K/W handbook, halfpage output 1 output 1 handbook, halfpage virtual junction output 3 output 2 output 4 output 2 virtual junction 3.0 K/W 3.0 K/W 3.0 K/W 3.0 K/W 2.2 K/W 2.2 K/W 0.7 K/W 0.7 K/W 0.2 K/W MEA860 - 2 MEA861 - 1 case 0.2 K/W case Fig.6 Equivalent thermal resistance network; BTL application. 1999 Jun 30 Fig.7 7 Equivalent thermal resistance network; single-ended application. Philips Semiconductors Product specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier TDA8561Q DC CHARACTERISTICS VP = 14.4 V; Tamb = 25 °C; measured in Fig.8; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VP positive supply voltage IP total quiescent current VO DC output voltage ∆VO DC output offset voltage note 1 6 14.4 18 V − 80 160 mA − 6.9 − V − − 150 mV switch-on voltage level 8.5 − − V Vmute mute voltage 3.3 − 6.4 V VO output voltage in mute position − − 2 mV ∆VO DC output offset voltage (between pins 6 to 8 and 10 to 12) − − 150 mV note 2 Mode select switch Von MUTE CONDITION VImax = 1 V; f = 1 kHz STANDBY CONDITION Vsb standby voltage 0 − 2 V Isb standby current − − 100 µA Isw switch-on current − 12 40 µA − 0.6 V Diagnostic output (pin 16) VDIAG diagnostic output voltage any short-circuit or clipping − Notes 1. The circuit is DC adjusted at VP = 6 to 18 V and AC operating at VP = 8.5 to 18 V. 2. At 18 V < VP < 30 V the DC output voltage ≤0.5VP. 1999 Jun 30 8 Philips Semiconductors Product specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier TDA8561Q AC CHARACTERISTICS VP = 14.4 V; RL = 4 Ω; f = 1 kHz; Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Stereo BTL application (measured in Fig.8) Po output power note 1 THD = 0.5% 15 19 − W THD = 10% 20 24 − W − 0.06 − % THD = 0.5% − 16 − W THD = 10% − 20 − W − 20 to − Hz THD total harmonic distortion Po = 1 W Po output power VP = 13.2 V B power bandwidth THD = 0.5%; Po = −1 dB; with respect to 15 W 15000 fl low frequency roll-off at −1 dB; note 2 − 45 − Hz fh high frequency roll-off at −1 dB 20 − − kHz Gv closed loop voltage gain 25 26 27 dB SVRR supply voltage ripple rejection on 48 − − dB mute 46 − − dB standby 80 − − dB 25 30 38 kΩ Rs = 0 Ω; note 4 − 70 − µV on Rs = 10 kΩ; note 4 − 100 200 µV mute notes 4 and 5 − 60 − µV Rs = 10 kΩ 40 60 − dB − − 1 dB − 10 − % 4 5 − W 5.5 7 − W − 0.06 − % ZI input impedance Vno noise output voltage on αcs channel separation ∆Gv channel unbalance note 3 DYNAMIC DISTORTION DETECTOR THD total harmonic distortion V16 ≤ 0.6 V; no short-circuit Quad single-ended application (measured in Fig.9) Po output power note 1 THD = 0.5% THD = 10% THD total harmonic distortion Po = 1 W PO output power RL = 2 Ω; note 1 THD = 0.5% 7.5 10 − W THD = 10% 10 12 − W fl low frequency roll-off at −1 dB; note 2 − 25 − Hz fh high frequency roll-off at −1 dB 20 − − kHz Gv closed loop voltage gain 19 20 21 dB 1999 Jun 30 9 Philips Semiconductors Product specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier SYMBOL SVRR PARAMETER supply voltage ripple rejection TDA8561Q CONDITIONS MIN. TYP. MAX. UNIT note 3 on 48 − − dB mute 46 − − dB standby 80 − − dB 50 60 75 kΩ ZI input impedance Vno noise output voltage on Rs = 0 Ω; note 4 − 50 − µV on Rs = 10 kΩ; note 4 − 70 100 µV mute notes 4 and 5 − 50 − µV Rs = 10 kΩ 40 60 − dB − − 1 dB − 10 − % αcs channel separation ∆Gv channel unbalance DYNAMIC DISTORTION DETECTOR THD total harmonic distortion V16 ≤ 0.6 V; no short-circuit Notes 1. Output power is measured directly at the output pins of the IC. 2. Frequency response externally fixed. 3. Ripple rejection measured at the output with a source impedance of 0 Ω, maximum ripple amplitude of 2 V (p-p) and at a frequency of between 100 Hz and 10 kHz. 4. Noise measured in a bandwidth of 20 Hz to 20 kHz. 5. Noise output voltage independent of Rs (Vi = 0 V). 1999 Jun 30 10 Philips Semiconductors Product specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier TDA8561Q TEST AND APPLICATION INFORMATION VP mode switch handbook, full pagewidth 16 14 non- inverting input 1 220 nF 1 100 nF 10 kΩ diagnostic 5 2200 µF 13 TDA8561Q TDA8564Q 6 60 kΩ 8 inverting input 2 ground (signal) supply voltage ripple rejection non-inverting input 4 220 nF 3 2 60 kΩ reference voltage 4 9 60 kΩ 17 12 60 kΩ 10 inverting input 3 15 7 11 MEA862 - 2 power ground (substrate) Fig.8 Stereo BTL application diagram. 1999 Jun 30 11 not connected Philips Semiconductors Product specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier VP mode switch handbook, full pagewidth 220 nF 1 100 nF 10 kΩ 16 14 non- inverting input 1 TDA8561Q 5 2200 µF 13 TDA8561Q TDA8564Q 6 1000 µF 60 kΩ inverting input 2 220 nF 8 3 1000 µF 2 ground (signal) 60 kΩ reference voltage 4 supply voltage ripple rejection 100 1/2Vp µF 9 60 kΩ not connected 17 non-inverting input 4 12 220 nF 1000 µF 60 kΩ inverting input 3 220 nF 10 15 1000 µF 7 11 MEA863 - 2 power ground (substrate) Fig.9 Quad single-ended application diagram 1. 1999 Jun 30 12 Philips Semiconductors Product specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier VP mode switch handbook, full pagewidth 220 nF 1 2200 µF 100 nF 10 kΩ 16 14 non- inverting input 1 TDA8561Q 5 13 TDA8561Q TDA8564Q 6 60 kΩ 220 nF inverting input 2 ground (signal) not connected 8 3 2 60 kΩ reference voltage 9 VP 4 60 kΩ 2 100 µF 17 non-inverting input 4 D1 12 220 nF 60 kΩ inverting input 3 220 nF 10 15 7 11 MEA864 - 2 power ground (substrate) (1) When short-circuiting the single-ended capacitor, the dissipation will be reduced due to diode D1. Fig.10 Quad single-ended application diagram 2. 1999 Jun 30 13 2200 µF Philips Semiconductors Product specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier TDA8561Q Mode select switch To avoid switch-on plops, it is advised to keep the amplifier in the mute mode during >100 ms (charging of the input capacitors at pins 1, 3, 15 and 17. The circuit in Fig.11 slowly ramps up the voltage at the mode select switch pin when switching on and results in fast muting when switching off. handbook, halfpage VP 100 Ω 10 kΩ mode select switch 47 µF 100 kΩ MGA708 Fig.11 Mode select switch circuitry. MGA709 10 2 THD (%) 10 1 (1) 10 1 (2) (3) 10 2 10 2 10 1 1 10 P o (W) (1) f = 10 kHz. (2) f = 1 kHz. (3) f = 100 Hz. Fig.12 Total harmonic distortion as a function of output power; VP = 14.4 V, RL = 4 Ω. 1999 Jun 30 14 10 2 Philips Semiconductors Product specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier TDA8561Q MGA710 50 handbook, full pagewidth Po (W) 40 (1) 30 (2) 20 (3) 10 0 8 10 12 14 16 VP (V) 18 (1) THD = 30%. (2) THD = 10%. (3) THD = 0.5%. Fig.13 Output power as a function of supply voltage. MGA711 20 Po (W) 18 16 14 12 10 10 10 2 10 3 10 4 f (Hz) Fig.14 Power bandwidth as a function of frequency; THD = 0.5%, VP = 14.4 V, RL = 4 Ω. 1999 Jun 30 15 10 5 Philips Semiconductors Product specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier TDA8561Q MGA712 1 THD (%) (1) 10 1 (2) (3) 10 2 10 10 2 10 3 10 4 f (Hz) 10 5 (1) Po = 0.1 W. (2) Po = 1 W. (3) Po = 10 W. Fig.15 Total harmonic distortion as a function of frequency; VP = 14.4 V, RL = 4 Ω. MGA713 50 RR (dB) (1) 60 (2) 70 80 (3) 90 100 10 10 2 10 3 10 4 (1) On condition. (2) Mute condition. (3) Standby condition. Fig.16 Ripple rejection as a function of frequency. 1999 Jun 30 16 f (Hz) 10 5 Philips Semiconductors Product specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier TDA8561Q MGA714 100 handbook, full pagewidth Iq (mA) 92 84 76 68 60 8 10 12 14 16 VP (V) 18 Fig.17 Quiescent current as a function of supply voltage; RL = ∞. SINGLE-ENDED APPLICATION MGA715 10 2 THD (%) 10 1 (1) (2) 10 1 (3) 10 2 10 2 (1) f = 10 kHz. 10 1 (2) f = 1 kHz. 1 10 P o (W) (3) f = 100 Hz. Fig.18 Total harmonic distortion as a function of output power; VP = 14.4 V, RL = 2 Ω. 1999 Jun 30 17 10 2 Philips Semiconductors Product specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier TDA8561Q MGA716 15 handbook, full pagewidth Po (W) 12 (1) 9 (2) 6 (3) 3 0 8 10 12 14 16 18 VP (V) (1) THD = 30%. (2) THD = 10%. (3) THD = 0.5%. Fig.19 Output power as a function of supply voltage. MGA717 10 Po (W) 8 6 4 2 0 10 10 2 10 3 10 4 f (Hz) Fig.20 Power bandwidth as a function of frequency; THD = 0.5%, VP = 14.4 V, RL = 2 Ω. 1999 Jun 30 18 10 5 Philips Semiconductors Product specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier TDA8561Q MGA718 1 THD (%) (1) (2) 1 10 10 2 10 10 2 10 3 10 4 f (Hz) 10 5 (1) Po = 0.1 W. (2) Po = 1 W. Fig.21 Total harmonic distortion as a function of frequency; VP = 14.4 V, RL = 2 Ω. MGA719 30 handbook, full pagewidth α cs (dB) 40 50 60 70 80 10 10 2 10 3 10 4 Fig.22 Channel separation as a function of frequency. 1999 Jun 30 19 f (Hz) 10 5 Philips Semiconductors Product specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier TDA8561Q BTL APPLICATION MGA720 14 P tot (W) 12 10 8 6 4 2 0 4 8 12 16 20 24 Po (W) 28 Fig.23 Total power dissipation as a function of output power; VP = 14.4 V, RL = 4 Ω (1 channel driven BTL or 4 channels in single-ended mode). 1999 Jun 30 20 Philips Semiconductors Product specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier TDA8561Q PACKAGE OUTLINE DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1 non-concave Dh x D Eh view B: mounting base side d A2 B j E A L3 L Q c 1 v M 17 e1 Z bp e e2 m w M 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A2 bp c D (1) d Dh E (1) e mm 17.0 15.5 4.6 4.2 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 12.2 11.8 2.54 e1 e2 1.27 5.08 Eh j L L3 m Q v w x Z (1) 6 3.4 3.1 12.4 11.0 2.4 1.6 4.3 2.1 1.8 0.8 0.4 0.03 2.00 1.45 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 95-03-11 97-12-16 SOT243-1 1999 Jun 30 EUROPEAN PROJECTION 21 Philips Semiconductors Product specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier TDA8561Q The total contact time of successive solder waves must not exceed 5 seconds. SOLDERING Introduction to soldering through-hole mount packages The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. This text gives a brief insight to wave, dip and manual soldering. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board. Manual soldering Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. Soldering by dipping or by solder wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joints for more than 5 seconds. Suitability of through-hole mount IC packages for dipping and wave soldering methods SOLDERING METHOD PACKAGE DIPPING DBS, DIP, HDIP, SDIP, SIL WAVE suitable(1) suitable Note 1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Jun 30 22 Philips Semiconductors Product specification 2 × 24 W BTL or 4 × 12 W single-ended car radio power amplifier NOTES 1999 Jun 30 23 TDA8561Q Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 02 67 52 2531, Fax. +39 02 67 52 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1999 SCA 66 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 545002/04/pp24 Date of release: 1999 Jun 30 Document order number: 9397 750 06053