INTEGRATED CIRCUITS DATA SHEET TDA1561Q 2 × 23 W high efficiency car radio power amplifier Preliminary specification Supersedes data of 1997 Jun 11 File under Integrated Circuits, IC01 1997 Aug 14 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q FEATURES GENERAL DESCRIPTION • Low dissipation due to switching from Single-Ended (SE) to Bridge-Tied Load (BTL) mode The TDA1561Q is a monolithic power amplifier in a 13 lead single-in-line (SIL) plastic power package. It contains two identical 23 W amplifiers. The dissipation is minimized by switching from SE to BTL mode, only when a higher output voltage swing is needed. The device is primarily developed for car radio applications. • High Common Mode Rejection Ratio (CMRR) • Mute/standby/operating/SE-only (mode select pin) • Zero crossing mute and standby circuit • Load dump protection circuit • Short-circuit safe to ground, to supply voltage and across load • Loudspeaker protection circuit • Device switches to single-ended operation at excessive junction temperatures. QUICK REFERENCE DATA SYMBOL VP PARAMETER supply voltage IORM repetitive peak output current Iq(tot) total quiescent current Istb standby current Zi input impedance Po output power CONDITIONS MIN. TYP. MAX. UNIT DC biased 6.0 14.4 18 V non operating − − 30 V load dump − − 50 V − − 4 A RL = ∞ − 95 150 mA − 1 50 µA − 60 − kΩ RL = 4 Ω; EIAJ − 36 − W THD 10% 21 23 − W Gv voltage gain 31 32 33 dB CMRR common mode rejection ratio f = 1 kHz; Rs = 0 Ω − 80 − dB SVRR supply voltage ripple rejection f = 1 kHz; Rs = 0 Ω 45 55 − dB − − 150 mV 40 60 − dB − − 1 dB ∆VO DC output offset voltage αcs channel separation ∆Gv channel unbalance Rs = 0 kΩ ORDERING INFORMATION PACKAGE TYPE NUMBER NAME TDA1561Q DBS13P 1997 Aug 14 DESCRIPTION plastic DIL-bent-SIL power package; 13 leads (lead length 12 mm) 2 VERSION SOT141-6 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q BLOCK DIAGRAM VP handbook, full pagewidth 7 MUTE IN1 1 6 OUT1 5 OUT1 R CIN MODE 12 REFERENCE SOURCES MUTE/STANDBY 1/2R THERMAL/ SHORT-CIRCUIT PROTECTION HIGHER TEMPERATURE BTL DISABLE 0.5VP 11 C 11 3 9 HVP OUT2 2 R 8 IN2 OUT2 13 TDA1561Q MUTE 4 GND1 10 MLD214 GND2 Fig.1 Block diagram. 1997 Aug 14 3 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q PINNING SYMBOL PIN DESCRIPTION IN1 1 input 1 HVP 2 half supply voltage control input MODE 3 mute/standby/operating/SE-only GND1 4 ground 1 OUT1 5 inverting output 1 OUT1 6 VP handbook, halfpage IN1 1 HV P 2 MODE 3 non-inverting output 1 GND1 4 7 supply voltage OUT1 5 OUT2 8 inverting output 2 OUT1 6 OUT2 9 non-inverting output 2 VP 7 GND2 10 ground 2 OUT2 8 C11 11 electrolytic capacitor for single-ended (SE) mode OUT2 9 CIN 12 common input GND2 10 IN2 13 input 2 C 11 TDA1561Q 11 CIN 12 IN2 13 MLD215 Fig.2 Pin configuration. 1997 Aug 14 4 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier The device is fully protected against short-circuiting of the output pins to ground and to the supply voltage. It is also protected against short-circuiting the loudspeaker and high junction temperatures. In the event of a permanent short-circuit condition to ground or the supply voltage, the output stage will be switched off causing a low dissipation. With permanent short-circuiting of the loudspeaker, the output stage will be repeatedly switched on and off. The duty cycle in the ‘on’ condition is low enough to prevent excessive dissipation. FUNCTIONAL DESCRIPTION The TDA1561Q contains two identical amplifiers with differential inputs. At low output power (up to output amplitudes of 3 V (RMS) at VP = 14.4 V), the device operates as a normal SE amplifier. When a larger output voltage swing is needed, the circuit switches internally to BTL operation. With a sine wave input signal the dissipation of a conventional BTL amplifier up to 2 W output power is more than twice the dissipation of the TDA1561Q (see Fig.9). To avoid plops during switching from ‘mute’ to ‘on’ or from ‘on’ to ‘mute/standby’ while an input signal is present, a built-in zero-crossing detector allows only switching at zero input voltage. However, when the supply voltage drops below 6 V (e.g. engine start), the circuit mutes immediately avoiding clicks coming from electronic circuitry preceding the power amplifier. In normal use, when the amplifier is driven with music-like signals, the high (BTL) output power is only needed for a small percentage of time. Under the assumption that a music signal has a normal (Gaussian) amplitude distribution, the dissipation of a conventional BTL amplifier with the same output power is approximately 70% higher (see Fig.10). The voltage of the SE electrolytic capacitor (pin 11) is always kept at 0.5VP by means of a voltage buffer (see Fig.1). The value of this capacitor has an important influence on the output power in SE mode, especially at low signal frequencies, a high value is recommended to minimize dissipation at low frequencies. The heatsink has to be designed for use with music signals. With such a heatsink, the thermal protection will disable the BTL mode when the junction temperature exceeds 145 °C. In this case the output power is limited to 5 W per amplifier. The gain of each amplifier is internally fixed at 32 dB. With the MODE pin, the device can be switched to the following modes: • Standby with low standby current (<50 µA) • Mute condition, DC adjusted • On, operation • SE-only, operation (BTL disabled). 1997 Aug 14 TDA1561Q 5 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VP PARAMETER supply voltage CONDITIONS MIN. MAX. UNIT operating − 18 V non operating − 30 V load dump; tr > 2.5 ms − 50 V VP(sc) short-circuit safe voltage − 18 V Vrp reverse polarity voltage − 6 V IOSM non-repetitive peak output current − 6 A IORM repetitive peak output current − 4 A Ptot total power dissipation − 60 W Tstg storage temperature −55 +150 °C Tvj virtual junction temperature − 150 °C Tamb operating ambient temperature −40 − °C THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) thermal resistance from junction to case Rth(j-a) thermal resistance from junction to ambient CONDITIONS see note 1 Note 1. The value of Rth(c-h) depends on the application (see Fig.3). 1997 Aug 14 6 VALUE UNIT 1.3 K/W 40 K/W Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q Heatsink design There are two parameters that determine the size of the heatsink. The first is the rating for the virtual junction temperature and the second is the ambient temperature at which the amplifier must still deliver its full power in the BTL mode. handbook, halfpage OUT 1 3.6 K/W With a conventional BTL amplifier, the maximum power dissipation with a music-like signal (at each amplifier) will be approximately two times 5 W. At a virtual junction temperature of 150 °C and a maximum ambient temperature of 60 °C, Rth(vj-c) = 1.3 K/W and Rth(c-h) = 0.2 K/W, the thermal resistance of the heatsink virtual junction OUT 2 OUT 1 3.6 K/W 3.6 K/W OUT 2 3.6 K/W 0.6 K/W 0.6 K/W 150 – 60 should be: ---------------------- – 1.3 – 0.2 = 7.5 K/W 2×5 MGC424 0.1 K/W Compared to a conventional BTL amplifier, the TDA1561Q has a higher efficiency. The thermal resistance of the heatsink should be: 150 – 60 1.7 ---------------------- – 1.3 – 0.2 = 13.8 K/W 2×5 1997 Aug 14 case Fig.3 Thermal equivalent resistance network. 7 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q DC CHARACTERISTICS VP = 14.4 V; Tamb = 25 °C; measured in Fig.6; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies VP supply voltage note 1 6.0 14.4 18.0 V Iq quiescent current RL = ∞ − 95 150 mA Istb standby current − 1 50 µA VC average electrolytic capacitor voltage at pin 11 − 7.1 − V ∆VO DC output offset voltage on state − − 150 mV mute state − − 50 mV standby condition 0 − 1 V mute condition 2 − 3 V Mode select switch (see Fig.4) voltage at mode select pin (pin 3) Vms Ims switch current through pin 3 on condition (SE/BTL mode) 4 − 5.5 V on condition (SE mode only) 7.5 − VP V Vms = 5 V − − 40 µA − 145 − °C Protection Tdis BTL disable temperature Note 1. The circuit is DC biased at VP = 6 to 18 V and AC operating at VP = 8 to 18 V. ,,,,,,, ,,,,,,, ,,,,,,, ,,,,,,, ,,,,,,, ,,,,,,, ,,,,,,, ,,,,,,, V Phalfpage handbook, SE Only 8 7 6 5 4 3 SE/BTL Mute 2 1 Standby 0 MLD216 Fig.4 Switching levels of mode select switch. 1997 Aug 14 8 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q AC CHARACTERISTICS VP = 14.4 V; RL = 4 Ω; C11 = 1000 µF; f = 1 kHz; Tamb = 25 °C; measured in Fig.6; unless otherwise specified. SYMBOL Po PARAMETER output power CONDITIONS THD = 1% MIN. 15 TYP. MAX. UNIT 18 − W THD = 10% 21 23 − W EIAJ − 36 − W VP = 13.2 V; THD = 0.5% − 14 − W VP = 13.2 V; THD = 10% − 20 − W Po = 1 W; f = 1 kHz; note 1 − 0.1 − % THD total harmonic distortion Pd dissipated power Bp power bandwidth THD = 1%; Po = −1 dB with respect to 15 W − 20 to 15 000 − Hz fro(l) low frequency roll-off −1 dB; note 2 − 25 − Hz fro(h) high frequency roll-off −1 dB 130 − − kHz Gv closed loop voltage gain 31 32 33 dB SVRR supply voltage ripple rejection on; f = 1 kHz 45 60 − dB mute; f = 1 kHz − 90 − dB − − dB − 80 − dB 45 60 75 kΩ see Figs 9 and 10 Rs = 0 Ω; Vripple = 2 V (p-p) standby; f = 100 Hz to 10 kHz 80 CMRR common mode rejection ratio Zi input impedance W Rs = 0 Ω; f = 1 kHz ∆Zi mismatch in input impedance − 1 − % VSE-BTL SE to BTL switch voltage level note 3 − 3 − V Vout output voltage-mute (RMS value) Vi = 1 V (RMS) − 50 100 µV Vn(o) noise output voltage αcs channel separation ∆Gv channel unbalance on; Rs = 0 Ω; note 4 − 160 300 µV on; Rs = 10 kΩ; note 4 − 170 − µV mute; note 5 − 20 − µV Rs = 0 Ω 40 60 − dB − − 1 dB Notes 1. The distortion is measured with a bandwidth of 10 Hz to 30 kHz. 2. Frequency response externally fixed (input capacitors determine low frequency roll-off). 3. The SE to BTL switch voltage level depends on VP. 4. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz. 5. Noise output voltage is independent of Rs (see Fig.6)(Vi = 0 V). 1997 Aug 14 9 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q TEST AND APPLICATION INFORMATION 1000 µF 16 V handbook, full pagewidth VP MODE 3 Rs IN1 input 1 220 nF 7 1 6 OUT1 220 nF 10 nF 4Ω 5 HVP OUT1 100 nF 2 3.9 Ω 11 C11 0.5Rs CIN 3.9 Ω 12 0.5VP 1000 µF (16 V) 9 470 nF OUT2 10 nF TDA1561Q Rs 8 IN2 13 input 2 220 nF 4 GND1 10 GND2 MLD223 Fig.5 Test diagram. 1997 Aug 14 10 4Ω OUT2 3.9 Ω 100 nF 3.9 Ω Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier handbook, full pagewidth TDA1561Q 1000 µF 16 V (1) Rs IN1 MODE VP 3 7 100 nF 1 6 220 nF OUT1 10 nF 4Ω 5 HVP OUT1 100 nF 2 3.9 Ω 100 nF 11 0.5Rs CIN 12 C11 0.5VP 2 x 220 nF 9 OUT2 TDA1561Q Rs 8 IN2 3.9 Ω 1000 µF (16 V) 4Ω 10 nF 100 nF 3.9 Ω 3.9 Ω OUT2 13 220 nF 4 GND1 10 GND2 MLD213 signal ground power ground Connect Boucherot filter to pin 4 respectively pin 10 with the shortest possible connection. Fig.6 Application diagram. 1997 Aug 14 11 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q 86.36 handbook, full pagewidth 43.18 gnd GND Mode select Vp Cool Power m s s m 4 × 220 nF Out 1 TDA1561Q Out 2 In1 sgnd In2 MGK182 Dimensions in mm. Fig.7 PCB layout (component side) for the application of Fig.6. 1997 Aug 14 12 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q 86.36 handbook, full pagewidth 43.18 gnd GND Vp Mode m s s Out2 m Out1 In2 sgnd In1 MGK183 Dimensions in mm. Fig.8 PCB layout (soldering side) for the application of Fig.6. 1997 Aug 14 13 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q INTERNAL PIN CONFIGURATIONS PIN 1,12,13 NAME EQUIVALENT CIRCUIT IN1, CIN, IN2 VP h pin 12 pin 1 pin 13 MLD217 2 HVP handbook, halfpage pin 2 3 MLD218 MODE VP handbook, halfpage pin 3 MLD221 1997 Aug 14 14 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier PIN 5, 9 NAME TDA1561Q EQUIVALENT CIRCUIT OUT1, OUT2 VP handbook, halfpage pins 5, 9 MLD220 6, 8 OUT1, OUT2 VP handbook, halfpage pins 6, 8 MLD219 11 C11 MLD222 1997 Aug 14 15 pin 11 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q ADDITIONAL APPLICATION INFORMATION MBH692 25 Pd (W) MBH693 25 Pd (W) handbook, halfpage handbook, halfpage 20 20 (1) (1) 15 15 (2) 10 10 5 5 0 (2) 0 2 0 4 6 8 Po (W) 10 2.2 µF 3.3 kΩ 330 Ω 91 nF 2.2 µF 3.3 kΩ 470 nF 68 nF 10 kΩ MGC428 Fig.11 IEC-268 filter. 1997 Aug 14 6 8 Po (W) 10 Fig.10 Dissipation; pink noise through IEC-268 filter. Fig.9 Dissipation; sine wave driven. input 4 (1) For a conventional BTL amplifier. (2) For TDA1561Q. Input signal 1 kHz, sinusoidal; VP = 14.4 V. (1) For a conventional BTL amplifier. (2) For TDA1561Q. 430 Ω 2 0 16 output Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q on condition MODE handbook, full pagewidth VP 3 7 IN1 1 6 220 nF OUT1 10 nF 4Ω 5 3.9 Ω OUT1 100 nF HVP 2 3.9 Ω 100 nF 11 C11 IEC-268 FILTER CIN 2× 220 nF pink noise 12 1/2VP 1000 µF (16 V) 9 OUT2 TDA1561Q 220 nF 8 4Ω 10 nF 100 nF 3.9 Ω 3.9 Ω OUT2 IN2 13 10 4 GND1 GND2 MGC427 Fig.12 Test and application diagram for dissipation measurements with a music-like signal (pink noise). MBH694 12 MBH695 125 handbook, halfpage handbook, halfpage Iq (mA) VO (V) 100 8 75 50 4 25 0 0 0 8 16 VP (V) 24 0 16 VP (V) 24 Vms = 5 V; RI = ∞. Vms = 5 V. Fig.13 DC output voltage as a function of VP. 1997 Aug 14 8 Fig.14 Quiescent current as a function of VP. 17 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier MBH696 160 TDA1561Q MBH697 80 IMODE (µA) handbook, halfpage handbook, halfpage IP (mA) 64 120 48 80 SE/BTL SE only 32 40 off mute 16 0 0 0 2 4 6 8 VMODE (V) 0 2 4 6 8 VMODE (V) VP = 14.4 V; Vin = 0 mV; RI = ∞. Fig.15 IP as a function of Vms (pin 3). Fig.16 Ims as a function of Vms. MBH698 60 MBH699 102 handbook, halfpage handbook, halfpage THD + N (%) Po (1) (W) 10 40 (2) 1 (3) (1) 20 10−1 (2) (3) 0 8.4 10.8 13.2 15.6 VP (V) 10−2 −2 10 18 Both channels driven. (1) EIAJ. 1 10 Po (W) 102 (1) f = 10 kHz. (2) f = 1 kHz. (3) f = 100 Hz. (2) THD = 10%. (3) THD = 1%. Fig.17 Output power as a function of VP. 1997 Aug 14 10−1 Fig.18 THD + noise as a function of Po. 18 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier MBH700 10 TDA1561Q MBH701 20 handbook, halfpage handbook, halfpage Bp (W) THD + N (%) (1) 18 (2) 1 16 (1) 14 10−1 (2) 12 10−2 10 102 103 104 f (Hz) 10 10 105 (1) Po = 10 W. (2) Po = 1 W. 102 103 104 f (Hz) 105 (1) For OUT2. (2) For OUT1. Fig.19 THD + noise as a function of frequency. Fig.20 Power bandwidth at THD = 1%. MBH702 36 Gv (dB) MBH703 −20 handbook, halfpage handbook, halfpage SVRR 34 (dB) −40 32 −60 30 −80 mute 28 −100 off 26 10 102 103 104 105 f (Hz) −120 10 106 Vin = 50 mV. 102 103 104 f (Hz) 105 Vripple(p-p) = 2 V. Fig.21 Gain as a function of frequency. 1997 Aug 14 on Fig.22 SVRR as a function of frequency. 19 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q MBH704 0 handbook, halfpage αcs (dB) −20 −40 handbook, halfpage 5 V/40 µA (1) −60 10 kΩ MODE 47 µF (2) −100 10 MBH690 102 103 104 f (Hz) 105 (1) Po = 1 W. (2) Po = 10 W. Fig.23 Channel separation as a function of frequency. 1997 Aug 14 Fig.24 Mode select circuit. 20 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier handbook, full pagewidth (1) TDA1561Q (2) (3) VP MBH691 Vload 0 −VP VP Vmaster 1/2 VP 0 VP Vslave 1/2 VP 0 0 1 2 See Fig.5: Vload = V6 − V5 or V8 − V9 Vmaster = V6 or V8 Vslave = V5 or V9 Fig.25 Output waveforms. 1997 Aug 14 21 t (ms) 3 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q PACKAGE OUTLINE DBS13P: plastic DIL-bent-SIL power package; 13 leads (lead length 12 mm) SOT141-6 non-concave Dh x D Eh view B: mounting base side d A2 B j E A L3 L Q c 1 v M 13 e1 Z e bp e2 m w M 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A2 bp c D (1) d Dh E (1) e e1 e2 Eh j L L3 m Q v w x Z (1) mm 17.0 15.5 4.6 4.2 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 12.2 11.8 3.4 1.7 5.08 6 3.4 3.1 12.4 11.0 2.4 1.6 4.3 2.1 1.8 0.8 0.25 0.03 2.00 1.45 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 95-03-11 97-12-16 SOT141-6 1997 Aug 14 EUROPEAN PROJECTION 22 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. Repairing soldered joints Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). Soldering by dipping or by wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Aug 14 23 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1997 SCA55 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 547027/1200/05/pp24 Date of release: 1997 Aug 14 Document order number: 9397 750 02732