PHILIPS TDA8580

INTEGRATED CIRCUITS
DATA SHEET
TDA8580
Multi-purpose power amplifier
Preliminary specification
Supersedes data of 1996 Jan 4
File under Integrated Circuits, IC01
1998 Feb 25
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
FEATURES
GENERAL DESCRIPTION
General
The TDA8580 is a stereo bridge-tied load (BTL) or a quad
single-ended amplifier that operates over a wide supply
voltage range from 8 to 28 V. This makes it suitable for
many applications, such as car radios, television and
home-sound systems.
• Operating voltage from 8 to 28 V
• Low distortion
• Few external components, fixed gain
• High output power
Because of an internal voltage buffer, this device can be
used without a capacitor connected in series with the load
(SE application). A combined BTL and 2 × SE application
can also be configured.
• Can be used as a stereo amplifier in bridge-tied load
(BTL) or quad single-ended (SE) amplifiers
• Single-ended mode without loudspeaker capacitor
• Mute and standby mode with one- or two-pin operation
• Diagnostic information for Dynamic Distortion Detector
(DDD), high temperature (145 °C) and short-circuit
• No switch on/off plops when switching between
‘standby’ to ‘mute’ and from ‘mute’ to ‘on’
• Low offset variation at outputs between ‘mute’ and ‘on’
• Fast mute on supply voltage drops.
Protection
• Reverse polarity safe
• Short-circuit proof to ground, positive supply voltage on
all pins and across load
• ESD protected on all pins
• Thermal protection against temperatures exceeding
150 °C
• Load dump protection
• Protected against open-circuit ground pins and output
short-circuited to supply ground.
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
TDA8580
DBS17P
1998 Feb 25
DESCRIPTION
plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
2
VERSION
SOT243-1
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VP
operating supply voltage
8.0
−
28
V
Iq(tot)
total quiescent current
VP = 14.4 V
−
120
140
mA
Istb
standby supply current
VP = 14.4 V
−
1
50
µA
Gv
voltage gain
single-ended
25
26
27
dB
bridge-tied load
31
32
33
dB
THD = 0.5%; VP = 14.4 V;
RL = 4 Ω
−
16
−
W
THD = 0.5%; VP = 24 V;
RL = 8 Ω
−
28
−
W
fi = 1 kHz; Po = 1 W;
VP = 14.4 V; RL = 4 Ω
−
0.05
−
%
fi = 1 kHz; Po = 10 W;
VP = 24 V; RL = 8 Ω
−
0.05
−
%
VP = 14.4 V; ‘mute’
condition; RL = 4 Ω
−
10
20
mV
VP = 14.4 V; ‘on’ condition
−
0
100
mV
Bridge-tied load application
Po
THD
Voffset(DC)
output power
total harmonic distortion
DC output offset voltage
Vno
noise output voltage
Rs = 1 kΩ; VP = 14.4 V
−
100
150
µV
SVRR
supply voltage ripple rejection
fi = 1 kHz; Vripple(p-p) = 2 V;
‘on’ or ‘mute’ condition;
Rs = 0 Ω
55
−
−
dB
THD = 0.5%; VP = 14.4 V;
RL = 4 Ω
−
4.2
−
W
THD = 0.5%; VP = 24 V;
RL = 4 Ω
−
13
−
W
VP = 14.4 V; ‘mute’
condition; RL = 4 Ω
−
10
20
mV
Single-ended application
Po
output power
Voffset(DC)
DC output offset voltage
VP = 14.4 V; ‘on’ condition
−
0
100
mV
Vno
noise output voltage
Rs = 1 kΩ; VP = 14.4 V
−
80
120
µV
SVRR
supply voltage ripple rejection
fi = 1 kHz; Vripple(p-p) = 2 V;
‘on’ or ‘mute’ condition;
Rs = 0 Ω
45
−
−
dB
1998 Feb 25
3
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
BLOCK DIAGRAM
VP1
VP2
3
15
handbook, full pagewidth
IN1
7
60
kΩ
TDA8580
IN2
45 kΩ
−
−
V/I
+
+
8
60
kΩ
+
+
−
V/I
−
9
45
kΩ
60
kΩ
10
STANDBY
11
45 kΩ
−
−
V/I
+
+
OA
+
+
−
−
V/I
OA
14
17
OUT3−
OUT4+
45 kΩ
13
5
DIAGNOSTIC
INTERFACE
2
6
16
MGE010
PGND1
Fig.1 Block diagram.
1998 Feb 25
BUFFER
BUFFER
12
60
kΩ
MUTE
OUT2−
45
kΩ
BUFFER
IN4
4
OUT1+
45 kΩ
30 kΩ
IN5
OA
1
Vpx
Vpx
IN3
OA
4
PGND2
DIAG
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
PINNING
SYMBOL
PIN
DESCRIPTION
OUT1+
1
non-inverting output 1
PGND1
2
power ground 1
VP1
3
supply voltage 1
OUT2−
4
inverting output 2
STANDBY
5
‘standby’/‘mute’/‘on’ selection
DIAG
6
diagnostic output
IN1
7
IN2
BUFFER
handbook, halfpage
OUT1+
1
PGND1
2
VP1
3
OUT2−
4
STANDBY
5
input 1
DIAG
6
8
input 2
IN1
7
9
buffer output
(single-ended output buffer)
IN2
8
IN3
10
input 3
BUFFER
9
IN4
11
input 4
IN3
10
IN5
12
input 5; signal ground capacitor
IN4
11
MUTE
13
‘mute’/‘on’ selection
IN5
12
OUT3−
14
inverting output 3
MUTE
13
VP2
15
supply voltage 2
OUT3−
14
PGND2
16
power ground 2
OUT4+
17
non-inverting output 4
VP2
15
PGND2
16
OUT4+
17
TDA8580
MGE009
Fig.2 Pin configuration.
1998 Feb 25
5
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
Protections are included to avoid the IC being damaged at:
FUNCTIONAL DESCRIPTION
• Over temperature: T > 150 °C.
The TDA8580 is a multi-purpose power amplifier with four
amplifiers which can be connected in the following
configurations with high output power and low distortion (at
minimum quiescent current);
• Short-circuit of the output pin(s) to ground or supply rail.
When short-circuited, the power dissipation is limited.
• A missing-current limiter which limits the maximum short
circuit output current to PGND or VP pins to 1 A.
The dissipation and speaker current will be minimized
because the short-circuited amplifier is switched off. The
chip temperature is limited by the temperature
protection.
• Dual bridge-tied load (BTL) amplifiers
• Quad single-ended amplifiers
• Dual single-ended amplifiers and one bridge-tied load
amplifier.
The amplifier can be switched on (play or ‘mute’) and off
(‘standby’) by the MUTE and STANDBY pins (for
interfacing directly with a microcontroller). One-pin
operation is also possible by applying a voltage greater
than 8 V to the ‘standby’/’mute’/’on’ selection pin (pin 5) to
switch the amplifier in ‘on’ mode.
• ESD protection (Human Body Model 3000 V, Machine
Model 300 V).
• Energy handling. A DC voltage of 6 V can be connected
to the output of any amplifier while the supply pins are
short-circuited to ground. No high DC current will flow
from the supply pins of the amplifier.
Special attention is given to the dynamic behaviour as
follows:
Diagnostics are available for the following conditions
(see Figs 4 to 7).
• Noise suppression during engine start.
• Amplifier in ‘mute’
• No plops when switching from ‘standby’ to ‘on’.
• Chip temperature greater than 145 °C
• Slow offset change between ‘mute’ and ‘on’ (controlled
by MUTE and STANDBY pins).
• Distortion over 2% due to clipping
• Short-circuit protection active.
• Low noise levels, which are independent of the supply
voltage.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VP
PARAMETER
supply voltage
CONDITIONS
MIN.
MAX.
UNIT
operating
8
28
V
load dump protected;
see Fig.3
−
45
V
VDIAG
voltage on diagnostic pin
−
18
V
IOSM
non-repetitive peak output current
−
6
A
IORM
repetitive peak output current
−
4.5
A
Vrev
reverse polarity voltage
−
6
V
Vsc
AC and DC short-circuit voltage of output
pins across loads and to ground or supply
pins
−
24
V
Ptot
total power dissipation
−
75
W
Tj
junction temperature
−
150
°C
Tstg
storage temperature
−55
+150
°C
Tamb
operating ambient temperature
−40
+150
°C
no external series
resistor in supply line;
note 1
Note
1. The maximum supply voltage under short circuit conditions is 28 V with an additional resistor in the supply line of
tbf Ω.
1998 Feb 25
6
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient
Rth j-c
thermal resistance from junction to case
VALUE
in free air
UNIT
40
K/W
1.5
K/W
CHARACTERISTICS
VP = 14.4 V; Tamb = 25 °C; fi = 1 kHz; RL = ∞; measured in test circuit of Fig.8; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
VP
operating supply voltage
8.0
14.4
Iq(tot)
total quiescent current
−
120
140
mA
Istb
standby current
−
1
50
µA
VO
DC output voltage
VP = 14.4 V
−
7.0
−
V
VP(mute)
low supply voltage mute
6.0
7.0
8.0
V
Vo
single-ended and bridge-tied
load output voltage
VP = 14.4 V; ‘mute’ condition;
RL = 4 Ω
−
−
20
mV
VI
DC input voltage
VP = 14.4 V
−
4.0
−
V
0
−
0.8
V
28
V
STANDBY PIN (see Table 1)
V5(stb)
voltage at STANDBY pin for
‘standby’ condition
Vhys(5)(stb)
hysteresis voltage at
STANDBY pin for ‘standby’
condition
note 1
−
0.2
−
V
V5(mute)
voltage at STANDBY pin for
‘mute’ condition
V13 < 1 V
2.0
−
5.5
V
V5(on)
voltage at STANDBY pin for
‘on’ condition
V13 < 1 V; VP > 9 V; note 2
8.0
−
18
V
MUTE PIN (see Table 1)
V13(mute)
voltage at MUTE pin for
‘mute’ condition
V5 = 5 V
0
−
1.0
V
V13(on)
voltage at MUTE pin for
‘on’ condition
V5 = 5 V
3.5
−
5.5
V
Isink = 1 mA
−
0.2
0.8
V
Diagnostic; output buffer (open-collector); see Figs 4, 5, 6 and 7
VOL
low level output voltage
ILI
leakage current
VDIAG = 14.4 V
−
−
1
µA
CD
clip detector
VDIAG < 0.8 V
tbf
2
tbf
%
Tj(diag)
junction temperature for high
temperature warning
VDIAG < 0.8 V
−
145
−
°C
1998 Feb 25
7
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
SYMBOL
PARAMETER
TDA8580
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Stereo BTL application (see Fig.8)
THD
Po
total harmonic distortion
output power
fi = 1 kHz; Po = 1 W; RL = 4 Ω
−
0.05
0.1
%
fi = 10 kHz; Po = 1 W;
RL = 4 Ω;
Filter: 22 Hz < f < 30 kHz
−
0.2
−
%
fi = 1 kHz; Po = 1 W;
VP = 14.4 V; RL = 4 Ω
−
0.05
−
%
fi = 1 kHz; Po = 10 W;
VP = 24 V; RL = 8 Ω
−
0.05
−
%
THD = 0.5%; VP = 14.4 V;
RL = 4 Ω
15
16
−
W
THD = 0.5%; VP = 24 V;
RL = 8 Ω
25
28
−
W
THD = 10%; VP = 14.4 V;
RL = 4 Ω
18
20
−
W
THD = 10%; VP = 24 V;
RL = 8 Ω
−
35
−
W
Gv
voltage gain
Vo(rms) = 3 V
31
32
33
dB
αcs
channel separation
Po = 2 W; fi = 1 kHz; RL = 4 Ω
40
55
−
dB
∆Gv
channel unbalance
−
−
1
dB
Voffset(DC)
DC output offset voltage
VP = 14.4 V; ‘on’ condition
−
0
100
mV
VP = 14.4 V; ‘mute’ condition;
RL = 4 Ω
−
10
20
mV
Vno
noise output voltage
Rs = 1 kΩ; VP = 14.4 V; note 3
−
100
150
µV
Vno(mute)
noise output voltage mute
note 3
−
0
20
µV
Vo(mute)
output voltage mute
Vi(rms) = 1 V
−
3
500
µV
SVRR
supply voltage ripple rejection
Rs = 0 Ω; fi = 1 kHz;
Vripple(p-p) = 2 V; ‘on’ or ‘mute’
condition
55
−
−
dB
Zi
input impedance
23
30
37
kΩ
CMRR
common mode rejection ratio
Rs = 0 Ω; Vi(rms) = 0.5 V;
fi = 1 kHz
−
60
−
dB
fi = 1 kHz; Po = 1 W; RL = 4 Ω
−
0.05
0.1
%
fi = 10 kHz; Po = 1 W;
RL = 4 Ω;
Filter: 22 Hz < f < 30 kHz
−
0.2
−
%
Quad SE application (see Fig.9)
THD
1998 Feb 25
total harmonic distortion
8
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
SYMBOL
TDA8580
PARAMETER
output power
Po
CONDITIONS
MIN.
TYP.
MAX.
UNIT
THD = 0.5%; VP = 14.4 V;
RL = 4 Ω
4
4.2
−
W
THD = 0.5%; VP = 24 V;
RL = 4 Ω
11.5
13
−
W
THD = 10%; VP = 14.4 V;
RL = 4 Ω
−
5.5
−
W
THD = 10%; VP = 24 V;
RL = 4 Ω
14
16
−
W
Gv
voltage gain
Vo(rms) = 3 V
25
26
27
dB
αcs
channel separation
Po = 2 W; fi = 1 kHz; RL = 4 Ω
40
46
−
dB
∆Gv
channel unbalance
−
−
1
dB
Voffset(DC)
DC output offset voltage
Vno
noise output voltage
VP = 14.4 V; ‘on’ condition
−
0
100
mV
VP = 14.4 V; ‘mute’ condition;
RL = 4 Ω
−
10
20
mV
Rs = 1 kΩ; VP = 14.4 V; note 3
−
80
120
µV
Vno(mute)
noise output voltage mute
note 3
−
0
20
µV
Vo(mute)
output voltage mute
Vi(rms) = 1 V
−
3
500
µV
SVRR
supply voltage ripple rejection
fi = 1 kHz; Vripple(p-p) = 2 V, ‘on’
or ‘mute’ condition; Rs = 0 Ω
45
−
−
dB
46
60
74
kΩ
Vi(rms) = 0.5 V; fi = 1 kHz;
Rs = 0 Ω
−
60
−
dB
Zi
input impedance
CMRR
common mode rejection ratio
Notes to the characteristics
1. Hysteresis between rise and fall voltage when MSB pin is controlled with real voltage source (the hysteresis depends
on resistor connected to MSB pin).
2. At lower VP the voltage at the STANDBY pin for ‘on’ condition will be adjusted automatically to maintain an
‘on’ condition at low battery voltage (down to 8 V) when using one-pin operation.
3. The noise output is measured in a bandwidth of 20 Hz to 20 kHz.
Table 1
Selection of ‘standby’, ‘mute’ and ‘on’.
VOLTAGE AT PIN 5
VOLTAGE AT PIN 13
FUNCTION
V5 < 0.8 V
don’t care
‘standby’ (off)
2 V < V5 < 5.3 V
V13 < 1 V
‘mute’ (DC settled)
2 V < V5 < 5.3 V
3.5 V < V13 < 5.3 V
‘on’ (AC operating)
V5 ≥ 8.0 V
don’t care
‘on’ (AC operating)
1998 Feb 25
9
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
play
normal
handbook, halfpage
MGL404
handbook, halfpage
amplifier
in mute
DIAG
45 V
on
STANDBY
mute
VP
amplifier
output
14.4 V
tr
t (ms)
tf
MGE019
Fig.3 Load dump voltage waveform.
Fig.4 Diagnostic waveform: normal play.
short-circuit
overload
handbook, halfpage
handbook, halfpage
DIAG
normal
play
DDD
normal
DIAG
amplifier
output
amplifier
output
MGE021
MGE020
Fig.5 Diagnostic waveform: short-circuit overload.
1998 Feb 25
Fig.6 Diagnostic waveform: DDD play.
10
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
short-circuit to
VP
PGND
handbook, halfpage
DIAG
amplifier
output
MGE022
Fig.7 Diagnostic waveform: short-circuit to GND and VP.
1998 Feb 25
11
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
APPLICATION INFORMATION
handbook, full pagewidth
1000 µF
16/40 V
220 nF
VP1
VP2
3
15
VinL
TDA8580
45 kΩ
−
−
V/I
+
+
IN2 8
60
kΩ
+
−
V/I
−
+
OA
4 OUT2−
9 BUFFER
45
kΩ
60
kΩ
IN3 10
60
kΩ
IN4 11
BUFFER
45 kΩ
−
−
V/I
+
+
−
V/I
14 OUT3−
+
−
+
+
−
OA
OA
17
45 kΩ
DIAGNOSTIC
INTERFACE
2
PGND1
+5 V
Fig.8 Stereo bridge-tied load application.
12
6
16
PGND2
4 or 8 Ω
OUT4+
MUTE 13
5
4 or 8 Ω
45
kΩ
IN5 12
STANDBY
−
45 kΩ
BUFFER
1998 Feb 25
1 OUT1+
Vpx
30 kΩ
100 µF
10 V
OA
+
Vpx
VinR
100 nF
IN1 7
60
kΩ
220 nF
VP
MGE011
DIAG
10
kΩ
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
VP
handbook, full pagewidth
1000 µF
16/40 V
VP1
VP2
3
15
100 nF
220 nF IN1 7
VinR
60
kΩ
TDA8580
FRONT
45 kΩ
−
−
V/I
+
+
220 nF IN2 8
60
kΩ
VinL
+
−
V/I
−
4 OUT2−
OA
−
45 kΩ
9
45
kΩ
IN5 12
60
kΩ
IN3 10
BUFFER
BUFFER
+
−
V/I
+
+
14 OUT3−
OA
−
220 nF
IN4 11
+
+
−
−
V/I
4 or 8 Ω
−
45 kΩ
−
VinR
60
kΩ
17
OA
OUT4+
+
4 or 8 Ω
45 kΩ
+5 V
VinL
MUTE 13
STANDBY
5
DIAGNOSTIC
INTERFACE
2
PGND1
13
6
16
PGND2
Fig.9 Quad single-ended application.
1998 Feb 25
4 or 8 Ω
+
45
kΩ
BUFFER
REAR
4 or 8 Ω
−
Vpx
30 kΩ
220 nF
OUT1+
+
+
Vpx
100 µF
10 V
1
OA
MGE013
DIAG
10
kΩ
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
handbook, full pagewidth
220 nF
VP1
VP2
3
15
100 nF
IN1 7
45 kΩ
−
60
kΩ
VinR
−
V/I
+
TDA8580
+
IN2 8
−
V/I
−
OUT1+
+
4 OUT2−
OA
45 kΩ
45
kΩ
30 kΩ
9
45
kΩ
BUFFER
BUFFER
+
60
kΩ
−
V/I
+
IN3 10
+
14 OUT3−
OA
−
+
+
60
kΩ
−
IN4 11
−
V/I
4 or 8 Ω
−
45 kΩ
−
IN5 12
BUFFER
VinR
220 nF
4 or 8 Ω
−
Vpx
Vpx
100 µF
10 V
1
OA
+
+
60
kΩ
220 nF
VP
1000 µF
16/40 V
17
OA
OUT4+
4 or 8 Ω
+
45 kΩ
+5 V
VinL
MUTE 13
STANDBY 5
DIAGNOSTIC
INTERFACE
2
PGND1
6
16
PGND2
MGE012
Fig.10 Dual single-ended and one bridge-tied load application.
1998 Feb 25
14
DIAG
10
kΩ
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
INTERNAL PIN CONFIGURATION
PIN
NAME
7, 8, 10,
11 and 12
inputs
EQUIVALENT CIRCUIT
VP
handbook, halfpage
IN
MGE014
1, 4,
14 and 17
outputs
handbook, halfpage
VP
OUT
0.5 VP
5 and 13
mode select
handbook, halfpage
MGE015
VP
MGE016
1998 Feb 25
15
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
PACKAGE OUTLINE
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
non-concave
Dh
x
D
Eh
view B: mounting base side
d
A2
B
j
E
A
L3
L
Q
c
1
v M
17
e1
Z
bp
e
e2
m
w M
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A2
bp
c
D (1)
d
Dh
E (1)
e
mm
17.0
15.5
4.6
4.2
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
10
12.2
11.8
2.54
e1
e2
1.27 5.08
Eh
j
L
L3
m
Q
v
w
x
Z (1)
6
3.4
3.1
12.4
11.0
2.4
1.6
4.3
2.1
1.8
0.8
0.4
0.03
2.00
1.45
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
95-03-11
97-12-16
SOT243-1
1998 Feb 25
EUROPEAN
PROJECTION
16
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Repairing soldered joints
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
Soldering by dipping or by wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Feb 25
17
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
NOTES
1998 Feb 25
18
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
NOTES
1998 Feb 25
19
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© Philips Electronics N.V. 1998
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
545102/1200/02/pp20
Date of release: 1998 Feb 25
Document order number:
9397 750 02237