BLA0912-250 Avionics LDMOS transistor Rev. 02 — 22 July 2004 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. 1.2 Features ■ ■ ■ ■ High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing common mode inductance. 1.3 Applications ■ Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS and JTIDS, DME or TACAN. 1.4 Quick reference data Table 1: Quick reference data Typical RF performance measured in common source class-AB circuit at PL = 250 W and 960 MHz to 1215 MHz frequency band. Th = 25 °C; Zth = 0.15 K/W; unless specified otherwise. Mode of operation Conditions VDS (V) PL (W) Gp ∆Gp ηD (dB) (dB) (%) Pulse droop (dB) tr tf Zth(j-h) ϕR (ns) (ns) (K/W) (deg) All modes tp = 100 µs; δ = 10 % 36 250 13.5 0.8 50 0.1 25 6 0.18 ±5 TCAS: 1030 MHz to 1090 MHz tp = 32 µs; δ = 0.1 % 36 250 14.0 0.8 50 0 25 6 0.07 ±5 Mode-S: 1030 MHz to 1090 MHz tp = 128 µs; δ = 2 % 36 250 13.5 0.8 50 0.1 25 6 0.15 ±5 tp = 340 µs; δ = 1 % 36 250 13.5 0.8 50 0.2 25 6 0.20 ±5 JTIDS: 960 MHz to 1215 MHz tp = 3.3 ms; δ = 22 % 36 200 13.0 1.2 45 0.2 25 6 0.45 ±5 BLA0912-250 Philips Semiconductors Avionics LDMOS transistor 2. Pinning information Table 2: Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Symbol 1 1 [1] 2 2 3 3 sym039 Top view [1] Connected to flange. 3. Ordering information Table 3: Ordering information Type number BLA0912-250 Package Name Description Version - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A 4. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage (DC) - 75 V VGS gate-source voltage (DC) - ±22 V Ptot total power dissipation - 700 W Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C Th ≤ 25 °C; tp = 50 µs; δ = 2 % 5. Thermal characteristics Table 5: Thermal characteristics Symbol Parameter Zth(j-h) thermal impedance from junction to heatsink Th = 25 °C [1] Conditions Typ Unit 0.18 K/W Thermal resistance is determined under RF operating conditions; tp = 100 µs, δ = 10 %. 9397 750 13275 Product data sheet [1] © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 22 July 2004 2 of 12 BLA0912-250 Philips Semiconductors Avionics LDMOS transistor 6. Characteristics Table 6: Characteristics Symbol Parameter Conditions V(BR)DSS drain-source breakdown VGS = 0 V; ID = 3 mA voltage Min Typ Max Unit 75 - - V VGSth gate-source threshold voltage VDS = 10 V; ID = 300 mA 4 - 5 V IDSS drain-source leakage current VGS = 0 V; VDS = 36 V - - 1 µA IDSX on-state drain current VGS = VGSth + 9 V; VDS = 10 V 45 - - A IGSS gate-source leakage current VGS = 20 V; VDS = 0 V - - 1 µA gfs forward transconductance VDS = 10 V; ID = 10 A - 9 - S RDSon drain-source on-state resistance VGS = 9 V; ID = 10 A - 60 - mΩ 7. Application information Table 7: Application information RF performance in common source class-AB circuit; Th = 25 °C; Zth = 0.15 K/W; unless specified otherwise. Symbol Parameter VDS Min Typ Max Unit drain-source voltage - - 36 V f frequency 960 - 1215 MHz PL load power tp = 100 µs; δ = 10 % 250 - W Gp power gain POUT = 250 W 12 13 dB ηD drain efficiency tp = 100 µs; δ = 10 % 40 50 % Zth thermal impedance tp = 100 µs; δ = 10 % - - 0.2 K/W tr rise time - 25 50 ns tf fall time - 6 25 ns Th Conditions pulse droop tp = 100 µs; δ = 10 % - 0.1 0.5 dB spurious VSWRL = 2:1 - - −60 dBc −55 - +70 °C heatsink temperature 9397 750 13275 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 22 July 2004 3 of 12 BLA0912-250 Philips Semiconductors Avionics LDMOS transistor 7.1 Ruggedness in class-AB operation The BLA0912-250 is capable of withstanding a load mismatch corresponding to VSWR = 5:1 through all phases under the following conditions: VDS = 36 V; f = 960 MHz to 1215 MHz at rated load power. Table 8: Typical impedance values Frequency (MHz) ZS (Ω) ZL (Ω) 960 0.89 − j1.70 1.53 − j1.13 1030 1.37 − j1.23 1.47 − j0.99 1090 2.09 − j1.27 1.38 − j0.85 1140 2.40 − j1.97 1.30 − j0.71 1215 1.51 − j2.61 1.17 − j0.47 001aab078 15 ηD Gp (dB) 13 55 ηD (%) 45 Gp 35 11 001aab079 18 Gp (dB) (5) 16 (2) 14 (1) 12 (4) (3) 10 9 25 7 15 8 6 4 5 940 990 1040 1090 1140 1190 f (MHz) 5 1240 2 0 100 200 300 PL(W) Th = 25 °C; VDS = 36 V; IDQ = 150 mA; class-AB; tp = 100 µs; δ = 10 %. Th = 25 °C; VDS = 36 V; IDQ = 150 mA; class-AB; tp = 100 µs; δ = 10 %. (1) f = 960 MHz. (2) f = 1030 MHz. (3) f = 1090 MHz. (4) f = 1140 MHz. (5) f = 1215 MHz. Fig 1. Power gain and drain efficiency as function of frequency; typical values. Fig 2. Power gain as function of load power; typical values. 9397 750 13275 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 22 July 2004 4 of 12 BLA0912-250 Philips Semiconductors Avionics LDMOS transistor 001aab080 300 001aab081 60 (2) (5) (1) 50 250 PL (W) 200 ηD (%) (1) (5) 40 (4) (2) (4) (3) (3) 150 30 100 20 50 10 0 0 0 2 4 6 8 10 12 14 16 Pi (W) Th = 25 °C; VDS = 36 V; IDQ = 150 mA; class-AB; tp = 100 µs; δ = 10 %. 0 50 (1) f = 960 MHz. (2) f = 1030 MHz. (2) f = 1030 MHz. (3) f = 1090 MHz. (3) f = 1090 MHz. (4) f = 1140 MHz. (4) f = 1140 MHz. (5) f = 1215 MHz. (5) f = 1215 MHz. 200 250 PL (W) 300 Fig 4. Efficiency as function of load power; typical values. 9397 750 13275 Product data sheet 150 Th = 25 °C; VDS = 36 V; IDQ = 150 mA; class-AB; tp = 100 µs; δ = 10 %. (1) f = 960 MHz. Fig 3. Load power as function of input power; typical values. 100 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 22 July 2004 5 of 12 BLA0912-250 Philips Semiconductors Avionics LDMOS transistor 40 C1 C2 C3 40 C4 C5 C8 C9 C10 R1 R2 60 C7 C6 001aab083 Dimensions in mm. See Table 9 for list of components. Fig 5. Component layout for class-AB test circuit. Table 9: List of components for class-AB test circuit (see Figure 5). [1] Component Description Catalogue no. C1 multilayer ceramic chip capacitor 1 nF [3] C2 multilayer ceramic chip capacitor 22 pF [2] C3 multilayer ceramic chip capacitor 1 nF [3] C4 KEMET tantalum SMD capacitor 47 µF T491D476M020AS C5 multilayer ceramic chip capacitor 56 pF [2] C6 multilayer ceramic chip capacitor 22 pF [2] C7 multilayer ceramic chip capacitor 47 pF [2] C8 KEMET tantalum SMD capacitor 22 µF T491D226M020AS C9 multilayer ceramic chip capacitor 1 nF [3] C10 multilayer ceramic chip capacitor 22 pF [2] R1 SMD resistor (0805) 51 Ω R2 philips resistor 49.9 Ω [1] Layout files are available on request in gerber and dxf format. [2] American Technical Ceramics type 100A or capacitor of same quality. [3] American Technical Ceramics type 100B or capacitor of same quality. 9397 750 13275 Product data sheet Value 2333 156 14999 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 22 July 2004 6 of 12 BLA0912-250 Philips Semiconductors Avionics LDMOS transistor L2 L1 C1 L3 L4 C2 L5 C3 C4 L6 L7 L8 C5 001aab085 See Table 10 for details of striplines. Fig 6. Layout of class-AB test circuit. Table 10: Layout details for class-AB test circuit (see Figure 6). [1] Component Description Dimensions L1 stripline 5 mm × 0.8 mm C1 stripline 1.2 mm × 3.5 mm L2 stripline cap. pad: 1 mm × 1 mm (1×) Input circuit curve: width 0.8 mm; angle 90°; radius 0.8 mm (10×) vertical: 3.9 mm × 0.8 mm (2×) vertical: 9.4 mm × 0.8 mm (3×) horizontal: 0.5 mm × 0.8 mm (4×) L3 stripline 3 mm × 2 mm C2 stripline 4 mm × 6.5 mm L4 stripline 5 mm × 1 mm C3 stripline 8.8 mm × 30 mm + 0.2 mm × 13 mm C4 stripline 0.2 mm × 13 mm + 19 mm × 17.1 mm L5 stripline 2.5 mm × 2.3 mm L6 stripline 4 mm × 1 mm C5 stripline 3 mm × 6.6 mm L7 stripline curve: width 0.8 mm; angle 90°; radius 0.8 mm (6×) Output circuit vertical: 2.2 mm × 0.8 mm (2×) vertical: 6 mm × 0.8 mm (1×) horizontal: 1 mm × 0.8 mm (2×) L8 stripline 2.5 mm × 0.8 mm 9397 750 13275 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 22 July 2004 7 of 12 BLA0912-250 Philips Semiconductors Avionics LDMOS transistor Table 10: Layout details for class-AB test circuit (see Figure 6). [1] …continued Component Description Dimensions 1/4 λ line stripline curve: width 1 mm; angle 90°; radius 0.8 mm vertical: 5 mm × 1 mm horizontal: 19 mm × 1 mm tapered line: WI = 1 mm; L = 12 mm; angle = 60° [1] Striplines are on a Rodgers Duroid 6010 printed-circuit board (εr = 10.2); thickness = 0.64 mm. 9397 750 13275 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 22 July 2004 8 of 12 BLA0912-250 Philips Semiconductors Avionics LDMOS transistor 8. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 7. Package outline. 9397 750 13275 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 22 July 2004 9 of 12 BLA0912-250 Philips Semiconductors Avionics LDMOS transistor 9. Revision history Table 11: Revision history Document ID Release date Data sheet status Change notice Order number Supersedes BLA0912-250_2 20040722 Product data - BLA0912-250_N_1 Modifications: BLA0912-250_N_1 • The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. 20031024 Preliminary specification - 9397 750 13275 Product data sheet 9397 750 13275 9397 750 12224 - © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 22 July 2004 10 of 12 BLA0912-250 Philips Semiconductors Avionics LDMOS transistor 10. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions 12. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 13275 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 22 July 2004 11 of 12 BLA0912-250 Philips Semiconductors Avionics LDMOS transistor 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 22 July 2004 Document order number: 9397 750 13275 Published in The Netherlands