PIN DIODE ◆Small Insertion Loss ■Applications ◆High Isolation ●High Power Antenna Switch ◆High Power Handling (25W output two-way radio) ■Dimensions MAX 5.0 The XB15A402 PIN diode employs a high reliability glass package that is designed for solid state antenna switches used in commercial two-way radios. Unit : mm MAX 2.8 MAX 4.2 TYP 0.8 ■General Description MIN 28 MIN 28 JEDEC DO-41 ■Absolute Maximum Ratings Ta=25 OC UNITS SYMBOL PARAMETER RATINGS V RM Repetitive Peak Reverse Voltage 270 V I FSM * Forward Surge Current 2 A P Power Dissipation 1 Tj Junction Temperature 175 O W C Tstg Storage Temperature -55 ~ 175 O C * t = 5sec ■Electrical Characteristics Ta=25 OC SYMBOL PARAMETER LIMITS TEST CONDITIONS MIN I R1 I R2 IF Reverse Current Forward Current TYP V R = 270V 10 V R = 200V V F = 1.0V UNITS MAX 150 500 µA nA mA Ct Diode Capacitance V R = 12V, f = 1MHz 2.0 3.0 pF r fs Forward Series Resistance I F = 50mA, f = 470MHz 0.5 0.7 Ω fc Cut-off Frequency V R = 12V, f = 50MHz 1.0 15 GHz 1059 XB15A402 FORWARD CURRENT vs. FORWARD VOLTAGE REVERSE CURRENT vs. REVERSE VOLTAGE 1.E+00 1.E-07 75℃ 100℃ 50℃ 25℃ 1.E-01 ＩF(A) 1.E-08 ＩR(A) 100℃ 75℃ 50℃ 1.E-02 1.E-09 25℃ 0℃ 1.E-03 0.3 0.4 0.5 0.6 0.7 0.8 1 1.1 1.2 1.E-10 1.E+00 1.3 1.E+01 1.E+02 1.E+03 ＶF(V) ＶR(V) FORWARD SERIES RESISTANCE vs. FORWARD CURRENT DIODE CAPACITANCE vs. REVERSE VOLTAGE f =470MHz, Ta =25℃ 1.E+00 1.E+00 1.E-01 1.E+00 1.E-01 1.E-03 1.E-02 f =1MHz, Ta =25℃ 1.E+01 Ｃｔ(pF) 1.E+01 ｒｆｓ(Ω) 0.9 1.E-01 1.E+01 1.E+02 1.E+03 ＶR(V) ＩF(A) Q vs. REVERSE VOLTAGE f =50MHz, Ta =25℃ 1.E+03 Ｑ 1.E+02 1.E+01 15 1060 1.E+00 1.E+00 1.E+01 ＶR(V) 1.E+02