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Obsolete Product – Not Recommended For New Design
LX3044 / 45 / 46
I N T E G R A T E D
10.3 Gbps Coplanar GaAs PIN Photo Diode
P R O D U C T S
P RODUCTION D ATA S HEET
KEY FEATURES
DESCRIPTION
LX3044 Single Die
LX3045, 1x4 Array Die
LX3046, 1x12 Array Die
Coplanar Waveguide , 50ohm
High Responsivity
Low Dark Current
High Bandwidth
Anode/Cathode on Illuminated
Side
ƒ 125mm Pad pitch
ƒ Die Good for Bond Wire or Flip
Chip Applications
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
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The LX304X family of photo diodes
are currently offered in die form
allowing manufacturers the versatility
of custom assembly using either bond
wire or flip chip configurations.
This
device
is
ideal
for
manufacturers of optical receivers,
transponders,
optical
transmission
modules and combination PIN photo
diode – transimpedance amplifier.
WWW . Microsemi .C OM
Microsemi’s GaAs Coplanar PIN
Photo Diode chips are ideal for high
bandwidth 850nm optical networking
applications.
The device family offers superior
noise performance and sensitivity in
single die, 1x4 array die or 1x12 array
die.
APPLICATIONS
ƒ Short Reach Optical Networks
ƒ 10Gigabit Ethernet, Fibre
Channel
ƒ VCSEL Array Receiver
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
BENEFITS
ƒ Large Wirebond Contact Pads
ƒ Low Contact Resistance
PRODUCT HIGHLIGHT
ƒ Coplanar Design (gnd-signal-gnd) 50 ohm
characteristic impedance
ƒ 125µm standard pad pitch for ease of test
ƒ Large 75µm x 75µm pad size for ease of
packaging
ƒ Wire bond or Flip Chip capability
TJ (°C)
Die Die
0 to 70
LX3044
LX3045
LX3046
1x4 Die
1x12 Die
PACKAGE ORDER INFO
Die Dimension1 Pad Dimension1
Active Area, A
Pad Pitch, p1 Die Thickness1
(µm)
(µm)
(µm)
(µm)
(µm)
75
Y
450
450
450
X
450
1200
3200
w
75
75
75
v
75
75
75
125
125
125
LX304X
O
Single Die
152
203
203
1. See Package Dimensions (page 4)
Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX3044-TR)
Copyright © 2000
Rev. 1.1, 2005-09-14
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
Obsolete Product – Not Recommended For New Design
LX3044 / 45 / 46
I N T E G R A T E D
10.3 Gbps Coplanar GaAs PIN Photo Diode
P R O D U C T S
P RODUCTION D ATA S HEET
ELECTRICAL CHARACTERISTICS
`
Parameter
Symbol
MAXIMUM RATINGS
Operating Junction Temperature
Range
Storage Temperature Range
TJ
LX304x
Typ
Max
+100
°C
-55
+125
°C
260
°C
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R
ID
BVR
C
BW
S21
VR = 5V, λ= 850nm
VR = 5V
IR = 2μA
VR = 5V
VR = 5V, λ= 850nm @ -3dB
1x4 and 1x12array only @ 10GHz
Units
-20
10 seconds maximum at temperature
ELECTRICAL CHARACTERISTICS
Active Area Diameter
Responsivity
Dark Current
Breakdown Voltage
Capacitance
Bandwidth (1)
RF Cross-Talk
Note:
Min
TSTG
Maximum Soldering Temperature
`
Test Conditions
0.55
30
7.8
75
0.6
0.1
47
0.3
8.1
0.5
0.33
-40
µm
A/W
nA
Volts
pF
GHz
dB
WWW . Microsemi .C OM
Unless otherwise specified, the following specifications apply over the following test conditions: TA = 25oC, VR = 5 Volts
1. Bandwidth is measured at –3dB electrical power (photocurrent drops to 71% of DC value) into a 50Ω load.
CIRCUIT MODEL
Lser
Rser
Cshunt
Rser (Ω)
LX304x
Copyright © 2000
Rev. 1.1, 2005-09-14
12.3
Rdiode
Lser (nH)
Cshunt (fF)
Cdiode (fF)
Rdiode (MΩ)
0.12
118.5
172
187
ELECTRICALS
O
Part #
Cdiode
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
Obsolete Product – Not Recommended For New Design
LX3044 / 45 / 46
I N T E G R A T E D
10.3 Gbps Coplanar GaAs PIN Photo Diode
P R O D U C T S
P RODUCTION D ATA S HEET
CHARACTERISTIC CURVES
Dark Current vs Voltage over Temperature
1.000
C@25oC (pF)
-30 Deg C
-10 Deg C
ID (nA)
C@85oC (pF)
25 Deg C
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C (pF)
10.000
0.38
0.37
0.36
0.35
0.34
0.33
0.32
0.31
0.3
0.29
0.28
0.27
0.26
0.100
0 1 2 3 4 5 6 7 8 9 10
0.010
0.0 V
2.0 V
4.0 V
6.0 V
V
8.0 V
10.0 V
12.0 V
14.0 V
50 Deg C
85 Deg C
110 Deg C
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LX3044/5/6 CV
16.0 V
Bias Voltage (V)
Calibrated BW vs Temperature LX3044
BVR @ IR=2UA
60.00
5
-5
-10
40.00
BV (V)
Relative S21 (dB)
50.00
0
30.00
MAX
AVG
MIN
L LIMIT
25C
-15
-20
20.00
85C
5C
10.00
0.0E+ 1.0E+ 2.0E+ 3.0E+ 4.0E+ 5.0E+ 6.0E+ 7.0E+ 8.0E+ 9.0E+ 1.0E+
00
09
09
09
09
09
09
09
09
09
10
0.00
frequency (Hz)
-40
-20
0
20
40
Temperature
60
80
100
120
O
LX3046 RF-Crosstalk
-30
-50
-60
-70
-80
-90
0.0E+00
5.0E+09
1.0E+10
Top (7,8)
Center (6,7)
Bottom (6,7)
Left (6,7)
Right (6,7)
1.5E+10
CHARTS
Crosstalk (dB)
-40
2.0E+10
Frequency (Hz)
Copyright © 2000
Rev. 1.1, 2005-09-14
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
Obsolete Product – Not Recommended For New Design
LX3044 / 45 / 46
I N T E G R A T E D
P R O D U C T S
10.3 Gbps Coplanar GaAs PIN Photo Diode
P RODUCTION D ATA S HEET
PACKAGE DIMENSIONS
WWW . Microsemi .C OM
LX304x
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Die
n
n
contact
Copyright © 2000
Rev. 1.1, 2005-09-14
PACKAGE
O
contact
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
Obsolete Product – Not Recommended For New Design
LX3044 / 45 / 46
I N T E G R A T E D
P R O D U C T S
10.3 Gbps Coplanar GaAs PIN Photo Diode
P RODUCTION D ATA S HEET
NOTES
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WWW . Microsemi .C OM
NOTES
PRODUCTION DATA – Information contained in this document is proprietary to
Microsemi and is current as of publication date. This document may not be modified in
any way without the express written consent of Microsemi. Product processing does not
necessarily include testing of all parameters. Microsemi reserves the right to change the
configuration and performance of the product and to discontinue product at any time.
Copyright © 2000
Rev. 1.1, 2005-09-14
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5