LX3044 / 45 / 46 I N T E G R A T E D 10.3 Gbps Coplanar GaAs PIN Photo Diode P R O D U C T S P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION LX3044 Single Die LX3045, 1x4 Array Die LX3046, 1x12 Array Die Coplanar Waveguide , 50ohm High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side 125mm Pad pitch Die Good for Bond Wire or Flip Chip Applications The LX304X family of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly using either bond wire or flip chip configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission modules and combination PIN photo diode – transimpedance amplifier. WWW . Microsemi .C OM Microsemi’s GaAs Coplanar PIN Photo Diode chips are ideal for high bandwidth 850nm optical networking applications. The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. APPLICATIONS Short Reach Optical Networks 10Gigabit Ethernet, Fibre Channel VCSEL Array Receiver IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com BENEFITS Large Wirebond Contact Pads Low Contact Resistance PRODUCT HIGHLIGHT Coplanar Design (gnd-signal-gnd) 50 ohm characteristic impedance 125 um standard pad pitch for ease of test Large 75um x 75um pad size for ease of packaging Wire bond or Flip Chip capability Single Die 1x4 Die 1x12 Die Die Die 0 to 70 LX3044 LX3045 LX3046 75 Y 450 450 450 X 450 1200 3200 w 75 75 75 v 75 75 75 125 125 125 LX304X TJ (°C) PACKAGE ORDER INFO Die Dimension1 Pad Dimension1 Active Area, A Pad Pitch, p1 Die Thickness1 (µm) (µm) (µm) (µm) (µm) 152 203 203 1. See Package Dimensions (page 4) Note: Available in Tape & Reel. Append the letter “T” to the part number. (i.e. LX3044T) Copyright 2000 Rev. 1.0, 2002-10-29 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX3044 / 45 / 46 I N T E G R A T E D 10.3 Gbps Coplanar GaAs PIN Photo Diode P R O D U C T S P RODUCTION D ATA S HEET ELECTRICAL CHARACTERISTICS ` Parameter Symbol MAXIMUM RATINGS Operating Junction Temperature Range Storage Temperature Range TJ LX304x Typ R ID BVR C BW S21 VR = 5V, λ= 850nm VR = 5V IR = 2µA VR = 5V VR = 5V, λ= 850nm @ -3dB 1x4 and 1x12array only @ 10GHz Max Units -20 +100 -55 +125 °C 260 °C 10 seconds maximum at temperature ELECTRICAL CHARACTERISTICS Active Area Diameter Responsivity Dark Current Breakdown Voltage Capacitance Bandwidth (1) RF Cross-Talk Note: Min TSTG Maximum Soldering Temperature ` Test Conditions 0.55 30 7.8 75 0.6 0.1 47 0.3 8.1 0.5 0.33 -40 °C µm A/W nA Volts pF GHz dB WWW . Microsemi .C OM Unless otherwise specified, the following specifications apply over the following test conditions: TA = 25oC, VR = 5 Volts 1. Bandwidth is measured at –3dB electrical power (photocurrent drops to 71% of DC value) into a 50Ω load. CIRCUIT MODEL Lser Rser Cshunt Cdiode Rdiode Part # Rser (Ω) Lser (nH) Cshunt (fF) Cdiode (fF) Rdiode (MΩ) LX304x 12.3 0.12 118.5 172 187 ELECTRICALS Copyright 2000 Rev. 1.0, 2002-10-29 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 LX3044 / 45 / 46 I N T E G R A T E D 10.3 Gbps Coplanar GaAs PIN Photo Diode P R O D U C T S P RODUCTION D ATA S HEET CHARACTERISTIC CURVES Dark Current vs Voltage over Temperature 1.000 C@85oC (pF) C@25oC (pF) -30 Deg C -10 Deg C ID (nA) C (pF) 10.000 0.38 0.37 0.36 0.35 0.34 0.33 0.32 0.31 0.3 0.29 0.28 0.27 0.26 25 Deg C 50 Deg C 85 Deg C 110 Deg C 0.100 0 1 2 3 4 5 6 7 8 9 10 0.010 0.0 V 2.0 V 4.0 V 6.0 V V 8.0 V 10.0 V 12.0 V 14.0 V WWW . Microsemi .C OM LX3044/5/6 CV 16.0 V Bias Voltage (V) BVR @ IR=2UA Calibrated BW vs Temperature LX3044 60.00 5 40.00 -5 MAX AVG BV (V) Relative S21 (dB) 50.00 0 -10 MIN 30.00 L LIMIT 25C -15 20.00 85C 5C -20 10.00 0.0E+ 1.0E+ 2.0E+ 3.0E+ 4.0E+ 5.0E+ 6.0E+ 7.0E+ 8.0E+ 9.0E+ 1.0E+ 00 09 09 09 09 09 09 09 09 09 10 0.00 frequency (Hz) -40 -20 0 20 40 60 80 100 120 Temperature LX3046 RF-Crosstalk -30 -50 Top (7,8) Center (6,7) Bottom (6,7) Left (6,7) Right (6,7) -60 -70 -80 -90 0.0E+00 5.0E+09 1.0E+10 1.5E+10 CHARTS Crosstalk (dB) -40 2.0E+10 Frequency (Hz) Copyright 2000 Rev. 1.0, 2002-10-29 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX3044 / 45 / 46 I N T E G R A T E D P R O D U C T S 10.3 Gbps Coplanar GaAs PIN Photo Diode P RODUCTION D ATA S HEET PACKAGE DIMENSIONS WWW . Microsemi .C OM Die LX304x n contact n contact PACKAGE Copyright 2000 Rev. 1.0, 2002-10-29 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 LX3044 / 45 / 46 I N T E G R A T E D P R O D U C T S 10.3 Gbps Coplanar GaAs PIN Photo Diode P RODUCTION D ATA S HEET NOTES WWW . Microsemi .C OM NOTES PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright 2000 Rev. 1.0, 2002-10-29 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5