Previous Datasheet Index Next Data Sheet PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V G @VGE = 15V, I C = 15A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-220AB Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 500 25 15 50 50 ±20 10 100 42 -55 to +150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-581 To Order Min. Typ. Max. — — — — — 0.50 — 2.0 (0.07) 1.2 — 80 — Units °C/W g (oz) Revision 0 Previous Datasheet Index Next Data Sheet IRGB430U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 500 — — V VGE = 0V, I C = 250µA 20 — — V VGE = 0V, IC = 1.0A — 0.46 — V/°C VGE = 0V, I C = 1.0mA — 2.3 3.0 IC = 15A V GE = 15V — 2.8 — V IC = 25A See Fig. 2, 5 — 2.6 — IC = 15A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -11 — mV/°C VCE = VGE, IC = 250µA 2.3 8.1 — S VCE = 100V, I C = 15A — — 250 µA VGE = 0V, V CE = 500V — — 1000 VGE = 0V, V CE = 500V, T J = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Min. — — — — — — — — — — — — — — — — — — — Typ. 31 6.2 12 29 11 91 66 0.24 0.17 0.41 13 27 130 130 0.76 7.5 660 110 12 Max. Units Conditions 47 IC = 15A 9.3 nC VCC = 400V See Fig. 8 19 VGE = 15V — TJ = 25°C — ns IC = 15A, V CC = 400V 160 VGE = 15V, R G = 23Ω 120 Energy losses include "tail" — — mJ See Fig. 9, 10, 11, 14 0.61 — TJ = 150°C, — ns IC = 15A, V CC = 400V — VGE = 15V, R G = 23Ω — Energy losses include "tail" — mJ See Fig. 10, 14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. VCC=80%(V CES), VGE=20V, L=10µH, R G= 23Ω, ( See fig. 13a ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-582 To Order Pulse width 5.0µs, single shot. Previous Datasheet Index Next Data Sheet IRGB430U 30 LO A D CU R R E N T (A ) For b oth: T riangular w ave: D ut y cy c le: 50% TJ = 125 °C T s in k = 90°C G ate d rive as sp ecified P ow er D issipation = 21W 20 C la mp v olta ge : 8 0% of rated S quare w ave: 60 % of rated voltage 10 Id eal diodes 0 0.1 1 10 100 f, F re quency (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 1000 IC , Collector-to-Em itter C urrent (A ) I C , C ollector-to-E mitter C urrent (A ) 100 TJ = 25 °C TJ = 1 50 °C 10 V G E = 15 V 20 µs P UL S E W ID TH 1 1 100 T J = 1 50 °C 10 TJ = 25 °C 1 V C C = 1 00 V 5 µ s P U L S E W ID TH 0.1 5 10 10 15 V G E , G ate -to-E m itter V olta ge (V ) V C E , C o llector-to-Em itter V oltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-583 To Order 20 Previous Datasheet Index Next Data Sheet IRGB430U 4.5 V G E = 15 V V C E , C ollector-to-E mitter V oltage (V ) Maxim um D C Collector C urrent (A ) 25 20 15 10 5 V G E = 15 V 80 µ s P U L S E W ID TH 4.0 I C = 3 0A 3.5 3.0 2.5 I C = 1 5A 2.0 I C = 7.5 A 1.5 1.0 0 25 50 75 100 125 -60 150 -40 -20 0 20 40 60 80 100 120 140 160 TC , C ase Tem perature (°C ) T C , C ase Tem perature (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T he rm al R e sp ons e (Z thJ C ) 10 1 D = 0 .5 0 0 .2 0 PD M 0 .1 0 0.1 0.01 0.00001 t 0 .0 5 0 .0 2 0 .0 1 1 t S IN G L E P U L S E (T H E R M A L R E S P O N S E ) N o te s : 1 . D u ty fa c to r D = t 1 /t 2 2 2 . P e a k T J = P D M x Z thJ C + T C 0.0001 0.00 1 0.01 0.1 1 t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-584 To Order 10 Previous Datasheet Index Next Data Sheet IRGB430U 140 0 100 0 Cies 800 Coes V G E , G ate-to-E m itter V oltag e (V ) 120 0 C , Capacitance (pF) 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 16 12 600 400 V C E = 40 0V I C = 15 A Cres 200 8 4 0 0 1 10 100 0 10 V C E , C o llector-to-Em itter V oltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage VCC VGE TC IC 0 .4 6 30 40 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 10 = 4 00 V = 15 V = 25 °C = 1 5A T o ta l S w itch in g L o s s e s (m J ) T o ta l S w itc h in g L o s se s (m J ) 0 .4 8 20 Q G , To ta l G a te C h arg e (nC ) 0 .4 4 0 .4 2 0 .4 0 R G = 50 Ω V GE = 1 5V V CC = 4 00 V I C = 30 A 1 I C = 15 A I C = 7.5 A 0 .3 8 0.1 0 10 20 30 40 50 60 -60 R G , G a te R e s is ta n c e ( Ω ) -40 -20 0 20 40 60 80 100 120 140 160 TC , C a s e T e m p era tu re (°C ) W Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-585 To Order Previous Datasheet Index Next Data Sheet IRGB430U 100 R G = 23 Ω T C = 150°C V C C = 4 00 V V G E = 15 V 1.6 IC , Collector-to-Emitter Current (A) Total S w itc hing Losses (m J) 2.0 1.2 0.8 0.4 VGE = 20V TJ = 125°C SAFE OPERATING AREA 10 0.0 A 1 0 10 20 30 40 1 10 100 VCE, Collector-to-Emitter Voltage (V) I C , C ollecto r-to-E m itter C urrent (A ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix A: Section D - page D-3 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 1 - JEDEC Outline TO-220AB C-586 To Order Section D - page D-12 1000