IRF IRS2540

IRPLLED1
IRPLLED1 High Voltage LED Driver using the IRS2540
Table of Contents
Page
1. Introduction………………………………………………………………...….1
2. Constant Current Control.......................................................................3
3. Frequency Selection..............................................................................6
4. Output L1 and COUT Selection ................................................................6
5. FET vs. Diode for the Low-Side Switch.………………………………….12
6. VCC Supply ...…………………………………………….………………….15
7. VBS Supply ……………………………………………….………………….16
8. Enable Pin ……….………………………….……………………………….17
9. Other Design Considerations .…………….……………………………….23
10. Design Procedure Summary ……….…………………………………….24
11. Bill of Materials ………………………..……………………………….24-26
12. PCB Layout ………………………………………………………………...26
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1. Introduction
As the industry becomes more power conscious to compensate for increasing energy costs and to meet
governmental regulations, new innovative ways of conserving energy are being developed. For the
lighting industry one of these outlets has been LEDs. Due to their longevity, robust design, low
maintenance and high efficiency, they have proven to be a viable alternative to less efficient light
sources. With their long term projected falling cost and further increased efficiency, the industry has
eagerly embraced LEDs and put them in high demand. LEDs require drivers that have specific
features such as constant current control over the temperature and manufacturing variations of LEDs,
dimming, and appropriate fault protections. The IRS254(0,1) is specifically designed to address these
requirements
The IRPLLED1 evaluation board is a high voltage LED driver designed to operate on an input DC
voltage of 40 V to 170 V and supply a programmable load current of 350 mA, 700 mA, 1 A, or 1.5 A.
The output voltage is also clamped at 30 V by the external open-circuit-protection circuitry, which can
easily be disabled or reconfigure as explained in this reference design. However the output voltage
should not exceed the ratings of the external components mounted on the board; higher voltage when
optimized components are utilized in the design. IRPLLED1 uses the IRS254(0,1), a high voltage, high
frequency buck control IC for constant LED current regulation. The IRS254(0,1) controls the average
load current by a continuous mode time-delayed hysteretic method using an accurate on chip band gap
voltage reference. The 8-pin, 200 V (600 V) rated IRS2540 (IRS2541) inherently provides short-circuit
protection, with open-circuit protection incorporated by a simple external circuit and has full dimming
capabilities. The IRS254(0,1) allows scalable designs to accommodate series and parallel
configurations of LEDs, for today’s production LEDs as well as new generation higher current LEDs,
and provides high current control accuracy over input and output voltage.
The evaluation board documentation will briefly describe the functionality of IRS254(0,1), discuss the
selection of the output stage, of the switching components, and of the surrounding circuitry. This board
was tested with a single Lumileds™ flood board for the 350 mA and 700 mA settings, and two
Lumileds flood boards in parallel for the 1 A and 1.5 A settings. Lumileds flood boards are available
through Future Electronics and have a max nominal current rating of 700 mA with a breakdown
voltage between 16 V and 24 V. This demo board can operate off of a 120 V AC rectified line with
the addition of a proper rectifying circuit.
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2. Constant current control
The IRS254(0,1) is a time-delayed hysteretic buck controller. During normal operating conditions the
output current is regulated via the IFB pin voltage, nominal value of 500 mV. This feedback is
compared to an internal high precision band gap voltage reference. An on-board dV/dt filter has also
been used to prevent erroneous transitioning.
Once the supply to the chip reaches VCCUV+, the LO output is held high and the HO output is low for a
predetermined period of time. This initiates the charging of the bootstrap capacitor, establishing the
VBS floating supply for the high-side output. Then the chip begins toggling HO and LO outputs as
needed to regulate the current. The deadtime of approximately 140 ns between the LO and HO gate
drive signals prevents “shoot-through” and reduce switching losses, particularly at higher frequencies.
VBUS
L2
VOUT+
RS1
RS2
DBOOT
IC1
VCC
CVCC1
ROV1
8
2
7
COM
DCLAMP
CBUS2
VB
1
HO
IFB
CBUS1
DOV
VS
3
6
4
5
RG1
M1
CVCC2
CBOOT
L1
LO
ENN
M2
RG2
ROV2
COUT
CEN
VOUT-
RF
RCS
ROUT
CF
COM
EN
DEN1
Fig. 1: IRS254(0,1) Constant Current LED Driver Typical Schematic
(see Fig. 16 for evaluation board schematic)
Note: Rout is needed only in few applications
Under normal operating conditions, if VIFB is below VIFBTH, HO is on and the load is receiving current
from VBUS. This simultaneously stores energy in the output stage, L1 and COUT, whilst VIFB begins to
increase. Once VIFB crosses VIFBTH, HO switches off after the delay tHO,off. Once HO is off, LO will
turn on after the deadtime, the inductor and output capacitor release the stored energy into the load and
VIFB starts decreasing. When VIFB crosses VIFBTH again, LO switches off after the delay tLO,off and HO
switches on after the delay tHO,on.
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(A)
(B)
Fig. 2: (A) Storing Energy in Inductor
(B) Releasing Stored Inductor Energy
Fig. 3: IRS254(0,1) Control Signals, Iavg=1.2 A
HO
50%
50%
50%
t_HO_off
t_HO_on
DT1
DT2
50%
50%
LO
t_LO_on
t_LO_off
IFB
IFBTH
Fig. 4: IRS254(0,1) Time Delayed Hysteresis
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The switching continues to regulate the current at an average value determined as follows: when the
output combination of L1 and COUT is large enough to maintain a low ripple on IFB (approximately less
than 100 mV), Iout(avg) can be calculated:
Iout (avg ) = VIFBTH
RCS
Having load current programmable from 350 mA to 1.5 A, series and parallel combinations of resistors
must be used to properly set the current, as well as distribute power accordingly. Equivalent
resistances for each current setting were calculated as follows:
0.5 V
= 1.43 Ω
350 mA
0.5 V
R700 mA =
= 0.71 Ω
700 mA
0.5 V
R1 A =
= 0.5 Ω
1A
0.5 V
R1.5 A =
= 0.33 Ω
1.5 A
R350 mA =
Since some of these equivalent values of resistance are not available, series and parallel combinations
are used, and they are specified as follows (all combinations use standard value resistors: 1.43 Ω, 0.56
Ω, and 0.47 Ω):
R350mA = 1.43 Ω
R700mA = 0.71 Ω ≈ (1.43 Ω || 1.43 Ω) = 0.715 Ω
R1A = 0.5 Ω ≈ (0.47 Ω + 0.56 Ω) || (0.47 Ω + 0.56 Ω) = 0.515 Ω
R1.5 A = 0.33 Ω ≈ (0.47 Ω + 0.56 Ω) || (0.47 Ω + 0.56 Ω) || (0.47 Ω + 0.56 Ω) = 0.343 Ω
Although some of the series and parallel combinations do not yield the exact resistance needed, for all
tolerance purposes, they are accurate enough. For this evaluation board, an extremely tight current
regulation was achieved with a worst case result of ±1.2% for the 350 mA setting as the bus voltage
was swept from 40 V to 170 V. Likewise a precise regulation of ±0.25% was maintained for a varying
load voltage from 16 V to 24 V for the 350 mA current setting.
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1600
1400
1000
±0.3%
±0.5%
800
±0.6%
IOUT (mA)
1200
600
±1.2%
400
350mA
1A
200
700mA
1.5A
0
30
80
VIN (V)
130
180
Fig. 5: Vout = 16 V, L1 = 470 µH, COUT = 33 µF
1600
±0.1%
1400
IOUT (mA)
1200
±0.17%
±0.13%
1000
800
600
350mA
400
700mA
200
1A
±0.25%
1.5A
0
10
15
20
25
30
VOUT (V)
Fig. 6: Vbus = 100 V, L1 = 470 µH, COUT = 33 µF
3. Frequency selection
The frequency in the IRS254(0,1) is free running and maintains current regulation by quickly adapting
to changes in input and output voltages. There is no need for additional external components to set the
frequency as seen with most oscillators, resulting in a part reduction. The frequency is determined by
L1 and COUT, as well as the input/output voltages and load current. The selection of the frequency will
be a trade-off between system efficiency, current control regulation, size, and cost.
The higher the frequency, the smaller and lower the cost of L1 and COUT, the higher the ripple, the
higher the FET switching losses, which becomes the driving factor as VBUS increases to higher
voltages, the higher the component stresses and the harder it is to control the output current.
With an input voltage as high as 170 V, the targeted frequency was determined to be between 50 kHz
and 75 kHz. Within this operating spectrum all components can easily handle their associated power
losses.
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4. Output L1 and COUT selection
To maintain tight hysteretic current regulation L1 and COUT need to be large enough to maintain the
supply to the load during tHO,on and avoid significant undershooting of the load current, which in turn
causes the average current to fall below the desired value.
First, we are going to look at the effect of the inductor when there is no output capacitor to clearly
demonstrate the impact of the inductor. In this case, the load current is identical to the inductor current.
Figure 7 shows how the inductor value impacts the frequency over a range of input voltages. As can be
seen, the input voltage has a great impact on the frequency and the inductor value has the greatest
impact at reducing the frequency for smaller input voltages.
Figure 8 shows how the variation in load current increases over a span of input voltage, as the
inductance is decreased. Figure 9 shows the variation of frequency over different output voltages and
different inductance values. Finally Fig. 10 shows how the load current variation increases with lower
inductance over a range of output voltages.
Frequency (kHz)
375
325
275
470uH
680uH
225
1mH
1.5mH
175
30
80
VIN (V)
130
180
Fig. 7: Iout = 350 mA, Vout = 16.8 V, COUT = 0 µF
The output capacitor can be used simultaneously to achieve the target frequency and current control
accuracy. Figure 11 shows how the capacitance reduces the frequency over a range of input voltage. A
small capacitance of 4.7 µF has a large effect on reducing the frequency. Figure 12 shows how the
current regulation is also improved with the output capacitance. There is a point at which continuing to
add capacitance no longer has a significant effect on the operating frequency or current regulation, as
can be seen in Figs. 12 & 13.
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400
470uH
390
680uH
1mH
IOUT (mA)
380
1.5mH
370
360
350
340
330
30
80
VIN (V)
130
180
Fig. 8: Iout = 350 mA, Vout = 16.8 V, COUT = 0 µF
400
Frequency (kHz)
380
360
340
320
300
280
260
470uH
240
220
1mH
680uH
1.5mH
200
13
18
23
VOUT (V)
28
33
Fig. 9: Iout = 350 mA, Vin = 50 V, COUT = 0 µF
345
343
341
IOUT (mA)
339
337
335
333
470uH
331
680uH
329
1mH
327
1.5mH
325
13
18
23
VOUT (V)
28
33
Fig. 10: Iout = 350 mA, Vin = 50 V, COUT = 0 µF
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Frequency (kHz)
1000
100
0uF
4.7uF
10uF
22uF
33uF
47uF
10
30
VIN (V)
80
130
180
Fig. 11: Iout = 350 mA, Vout = 16.8 V, L = 470 µH
390
0uF
380
4.7uF
10uF
IOUT (mA)
370
22uF
33uF
360
47uF
350
340
330
30
50
70
90
110
130
150
170
VIN (V)
Fig. 12: Iout = 350 mA, Vout = 16.8 V, L = 470 µH
400
40V
350
100V
160V
Frequency (kHz)
300
250
200
150
100
50
0
0
10
20
30
Capacitance (µF)
40
50
Fig. 13: Iout = 350 mA, Vout = 16.8 V, L = 470 µH
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The addition of the COUT is essentially increasing the amount of energy that can be stored in the output
stage, which also means it can supply current for an increased period of time. Therefore by slowing
down the di/dt transients in the load, the frequency is effectively decreased.
With the COUT capacitor, the inductor current is no longer identical to that seen in the load. The
inductor current will still have a perfectly triangular shape, where as the load will see the same basic
trend in the current, but all sharp corners will be rounded with all peaks significantly reduced, as can
be seen in Figs. 14 & 13.
Fig. 14: Iout = 350 mA, Vin = 100 V, Vout = 16.85 V, L = 470 µH, COUT = 33 µF
Fig. 15: Iout = 350 mA, Vin = 100 V, Vout = 16.85 V, L = 470 µH, COUT = 33 µF
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L1 and COUT need to be chosen so that it stores enough energy to supply the load during tHO,on while
maintaining current control accuracy. A lower value of L1 will require a larger value of COUT.
Since this evaluation board is designed to handle a load current only as high as 1.5 A, off the shelf
inductors are available. Instead, to minimize or eliminate any effects of eddy currents, a custom
inductor for this application was designed by VOGT. High value (in the order of 1 mH or more)
inductors that can handle this amount of current are not readily available and tend to be bulky and
costly. With too small of an inductor (in the order of 100 µH or less), the COUT capacitor would need
to be in the order of hundreds of micro farads to maintain good current regulation. Additionally, with a
smaller inductance, the ripple current seen by the capacitor would be quite large, shortening the life of
the capacitor, if an electrolytic were used.
Because of these considerations an inductor of 470 µH and an output capacitance of 33 µF were
chosen to accommodate the 1.5 A load current. The current ripple associated with 470 µH is relatively
small, so the board can be operated with or without output capacitance at the lower current ratings.
5. FET vs. diode for the low-side switch
The IRS254(0,1) has been designed so that it can drive a low-side FET and a high-side FET. If the use
of two FETs for the half-bridge proves to be a cost issue, the low-side FET can be replaced by a
freewheeling diode as shown in Fig. 16. Of course this may yield a lower cost system, but there are
some efficiency tradeoffs to be considered, particularly for higher load currents. The system efficiency
is directly influenced by several system parameters including operating frequency, load current, and
input voltage.
A major parameter to consider is the reverse recovery time of the diode in comparison to the body
diode of the FET it replaces. The diode intrinsically has a much shorter reverse recovery time since the
device is specifically designed for this, where as the body diode is a parasitic element that originates
from basic processing technology and typically has inferior characteristics, in terms of forward drop,
reverse recovery, and power handling capabilities.
Fig. 16: Alternate IRS254(0,1) Time-Delayed Hysteretic Controlled Evaluation Board Schematic
Note: Rout is needed only in few applications
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The reverse recovery problem is incurred during the deadtime after the low-side FET has been on and
conducting current. During this deadtime the low-side FET is off, but the body diode is freewheeling
and providing current to the load. Since the body diode is conducting current, carriers are present and
will eventually need to be recombined, leading to reverse recovery. When the high-side FET turns on,
the VS node is almost instantly pulled from COM to VBUS and the low-side FET or the freewheeling
diode conducts current from VS to ground due to the reverse recovery effect, potentially resulting in
large power losses, overheating of the low-side switching component and component stress, as can be
seen in Figs. 17 & 18. Since the power diode has a much shorter reverse recovery time, the diode will
conduct current for a significantly shorter period and have lower power losses. At lower frequency
and lower load current, the long recovery time associated with the FET body diode may not be an
issue. For higher frequency higher current applications, a diode could provide lower power losses with
respect to a FET.
In the evaluation board, the reverse recovery current peaks using a low-side FET would be on the order
of 8 A, which puts a lot of stress on the components, not to mention the increased operating
temperature. By replacing the low-side FET with an appropriate freewheeling diode, the reverse
recovery peaks can be reduced and limited to 4.5 A. The frequency was also selected to keep the diode
reverse recovery associated power losses low.
With the inclusion of a freewheeling diode instead of a low-side FET there is a need for RS3 and DVCC.
Without an initial pulse to come from LO establishing a ground reference for CBOOT to charge, an
alternate ground reference must be established. There are two paths that could potentially serve this
role, one is through RS2 and the other is through the open-circuit components, ROV1 and ROV2. The
most versatile path is through ROV1 and ROV2 since there are no constraints along this path tied to the
chip’s turn on threshold. By making these two resistors, that are already serving function to the circuit,
a bit smaller, the capacitor now has a low resistive path for which to charge. RS3 allows this charging
path to exist without any interference from the chip VCC, likewise DVCC also allows this path to remain
isolated. As the bus voltage is increased, the path will allow CBOOT to fully charge and remain charged
until the chip comes out of UVLO. At which time the self powering feature will take over after the
first pulse from HO, and the ground reference will then be created by the freewheeling diode.
Fig. 17: Using a low-side FET, Vin = 100 V, Iout = 1.5 A, Vout = 17 V
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Fig. 18: Using a diode on the low-side, Vin = 100 V, Iout = 1.5 A, Vout = 17 V
Fig. 19: Low-side FET vs. low-side diode comparison, Vin = 100 V, Iout = 1.5 A, Vout = 17 V
The bus voltage is also of importance since it will determine how long the low-side FET, or the
freewheeling diode will be conducting. If the bus voltage is very large in comparison to the output, the
low-side FET or diode will be conducting for the majority of the switching period. A FET has much
lower on-state losses due to the low RDS,on, where as high voltage diodes rarely have forward drops less
than 1 V. If the load current is in the order of 1 A or 1.5A, a FET may have low on-state losses, where
as the diode may experience larger conduction losses. If the load current is only a few hundred
milliamps, the losses observed in the diode may not be a concern, and the cost savings of a diode could
be exercised. For system efficiency, the forward conduction losses of a diode can also be compared to
the reverse recovery losses with a low-side FET. For this evaluation board, it was found that
conduction losses were less than reverse recovery losses when running at 1.5 A and therefore uses and
freewheeling diode.
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Fig. 20: Low-side FET and low-side diode comparison, Vin = 100 V, Iout = 1.5 A, Vout = 17 V
The most efficient solution would be to put the FET in parallel with the diode in the low-side position.
In this case, during the deadtime, instead of the body diode freewheeling, the additional diode would
be conducting. This will always be the case as long as the forward drop of the external diode is less
than that of the body diode. If costs permit, a diode in parallel with an IGBT could also be an option.
A detailed, evaluation of system needs and cost should be performed prior to choosing a FET or diode
for the low-side. Although a diode is cheaper, in certain cases the associated power losses may require
a heatsink, nullifying the cost reduction of using a diode. Likewise there are conditions where a FET
may prove less efficient, in which case more money will be spent on the FET as well as the heatsink to
keep it cool. The evaluation board is provided with a freewheeling diode and the footprint for a lowside FET has been provided to replace the diode with a FET if the application requires it. It is not
recommended to replace the diode with a FET for the 1 A and 1.5 A operation because of the
associated reverse recovery power losses. If replacing the diode with a FET is a requirement, it might
be beneficial to move the diode heatsink to the high-side FET.
In terms of choosing the correct FET, it is best to use a FET rated as low as possible considering what
is needed in the application. FET parameters degrade as the voltage ratings go up. Therefore, if a 600
V FET is used in a 200 V application, extra losses may be incurred due to a component that far
exceeds the requirements. If using two FETs, the next parameter to be considered is the reverse
recovery time. Obviously FETs will not have a reverse recovery time comparable to diodes, but a
good FET reverse recovery time will be in the order of 150 ns to 200 ns. The two remaining
parameters to consider are direct trade-offs of each other, on resistance and gate charge. If the FET has
a rather low gate capacitance, the die size will be small, but this will result in a larger on resistance
which could potentially be a problem for high current applications. On the other hand, if the FET has a
large gate capacitance, the die will be large and the FET will have a low on resistance, but it will be
more difficult to turn on the FET which will also stress the IC. There has to be a direct compromise
between the two, typically the best solution is a FET with a relatively low RDS,on and a medium sized
gate capacitance, much like the device chosen for this application
6. VCC supply
Since the IRS2540 (IRS2541) is rated for 200 V (600 V), VBUS can reach values of this magnitude. If
only a supply resistor to VBUS is used, it will experience high power losses. For higher voltage
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applications an alternate VCC supply scheme utilizing a resistor feed-back (RS2) from the output needs
to be implemented, as seen in Figs. 1 & 16.
The resistance between VBUS and VCC (RS1) should be large enough to minimize the current sourced
directly from the input voltage line; value should be on the order of several kilo ohms. Through this
supply resistor a current will flow to charge the VCC capacitor. Once the capacitor is charged up to the
VCCUV+ threshold, the IRS254(0,1) begins to operate, activating the LO and HO outputs. After the first
few cycles of switching, the resistor RS2 connected between the output and VCC will take over and
source current for the IC. The RS2 resistor provided in the evaluation board has been designed for an
output of roughly 20 V. If a higher output voltage is desired, RS2 will need to be redesigned and
adjusted accordingly.
A 10 µF capacitor has been used for stabilizing VCC of the chip. Such a large capacitance makes the
chip immune to any large low frequency ripple that may be observed on VBUS due to a rectified
waveform. There are also other benefits associated with using such a large capacitance, of which will
be discussed later.
With having all input and output voltages defined for the evaluation board, enough information is
provided to calculate values for RS1, RS2, and RS3 (see Fig. 23 for component definition). All three
supply resistors were chosen to be 1 W devices since they source all current to the chip. By making
each component 1 W, the work in supplying the chip can be split up equally, making it a more robust
solution, instead of baring the entire task on one component. Doing this also allows the chip to turn on
at a lower bus voltage. Assuming that a 14 V external zener diode will be used on VCC, exact values of
RS1, RS2, and RS3 were calculated as follows (values were calculated to operate the components just
below half their rated power):
P =V
RS1
(V
1 W=
2
RS1
(V
=
Bus max
2
R
Bus max
− 14 V
)
2
RS1
− 14 V
1 W
2
) = (170 V − 14 V )
2
2
1 W
2
RS1 = 48.6 kΩ ≈ 56 kΩ
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RS3
min duty ratio ≈ 10%
1 W =
2
RS 3 =
(1 − 0.1) ⋅ (VBus
(1 − 0.1) ⋅ (VBus
max
max
− 14 V
)
2
RS 3
− 14 V
1 W
2
) (1 − 0.1) ⋅ (170 V − 14 V )
=
2
2
1 W
2
RS 1 = 43.8 kΩ ≈ 47 kΩ
RS2
1 W =
2
RS 2 =
(V
Out max
(V
Out max
− 14 V
)
2
RS 2
− 14 V
1 W
2
) (30 V − 14 V )
=
2
2
1 W
2
RS 1 = 512 Ω ≈ 1 kΩ
7. VBS supply
The bootstrap diode (DBOOT) and supply capacitor (CBOOT) comprise the supply voltage for the highside driver circuitry. To guarantee that the high-side supply is charged up before operation commences,
the first pulse from the output drivers comes from the LO pin. During undervoltage lock-out mode, the
high- and low-side outputs are both held low.
During an open-circuit condition, without the watchdog timer, the HO output would remain high at all
times and the charge stored in CBOOT would slowly leak until reaching zero, thus eliminating the
floating power supply for the high-side driver. To maintain sufficient charge on CBOOT, a watchdog
timer has been implemented. In the condition where VIFB remains below VIFBTH, the HO output will be
forced low roughly after 20 µs and the LO output forced high. This toggling of the outputs will last for
1 µs to maintain and replenish sufficient charge on CBOOT.
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Fig. 21: Illustration of Watchdog Timer
The bootstrap capacitor value needs to be chosen so that it maintains sufficient charge for at least the
20 µs interval until the watchdog timer allows the capacitor to recharge. If the capacitor value is too
small, the charge will fully dissipate in less than 20 µs. The bootstrap capacitor should be at least 100
nF. A larger value within reason can be used if preferred.
The bootstrap diode should be a fast recovery, if not an ultrafast recovery component to maintain good
efficiency. Since the cathode of the bootstrap diode will be switching between COM and VBUS + 14 V,
the reverse recovery time of this diode is of critical importance. For additional information concerning
the bootstrap components, refer to the Design Tip (DT 98-2), “Bootstrap Component Selection For
Control ICs” at www.irf.com under Design Support.
8. Enable pin
The enable pin can be used for dimming and open-circuit protection. When the ENN pin is held low,
the chip remains in a fully functional state with no alterations to the operating environment. To disable
the control feedback and regulation, a voltage greater than VENTH (approximately 2.5 V) needs to be
applied to the ENN pin. With the chip in a disabled state, HO output will remain low, where as the LO
output will remain high to prevent VS from floating, in addition to maintaining charge on the bootstrap
capacitor. The threshold for disabling the IRS254(0,1) has been set to 2.5 V to enhance immunity to
any externally generated noise, or application ground noise. This 2.5 V threshold also makes it ideal to
receive a drive signal from a local microcontroller.
Dimming mode
To achieve dimming, a signal with constant frequency and set duty cycle can be fed into the EN pin.
There is a direct linear relationship between the average load current and duty cycle. If the ratio is
50%, 50% of the maximum set light output will be realized. Likewise if the ratio is 30%, 70% of the
maximum set light output will be realized. A sufficiently high frequency of the dimming signal must
be chosen to avoid flashing or “strobe light” effect. A signal on the order of a few kHz should be
sufficient. For this evaluation board, a fully adjustable (0% to 100% duty cycle) PWM wave generator
has been designed but not included in the layout. The following design is a recommended enable
signal generator.
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VBUS
RS2
R1
R2
OUT1
C1
IN1(-)
R3
2
IN1(+)
3
GND
4
LM393
C2
IC2
1
VCC
CVCC4
8
OUT2
R6
CVCC3
7
IN2(-)
R5
6
IN2(+)
5
Out to
ENN pin
POT1
DEN2
R4
COM
Fig. 22: Suggested PWM Driver (not included in IRPLLED1)
If an external supply for VCC is used, the minimum amount of dimming achievable (light output
approaches 0%) will be determined by the “on” time of the HO output, when in a fully functional
regulating state. To maintain reliable dimming, it is recommended to keep the “off” time of the enable
signal at least 10 times that of the HO “on” time. For example, if the application is running at 75 kHz
with an input voltage of 100 V and an output voltage of 20 V, the HO “on” time will be 3.3 µs (onefourth of the period – see calculations below) according to standard buck topology theory. This will
set the minimum “off” time of the enable signal to 33 µs.
Duty Cycle =
Vout
20 V
∗ 100 =
*100 = 20%
Vin
100 V
HOon time = 20% * 1
75 kHz
= 3.3 µs
If the chip is supplied from the output, a large enough capacitor on VCC is required to maintain
sufficient current while in a disabled state. For this evaluation board, where the IC supply comes from
the output, a 10 µF capacitor is used to ensure continued proper operation while disabled, the output is
capable of dimming down to roughly 10 V. A “strobe light” effect in the LEDs may be observed if
VCC drops too much or if the dimming frequency is too low.
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Enable Duty Cycle Relationship to Light Output
100
90
Enable Pin Duty Cycle
80
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
70
80
90
100
Percentage of Light Output
Fig. 23: Light Output vs. Enable Pin Duty Cycle
Fig. 24: IRS2540 Dimming Signals
Since the IRS254(0,1) does not include an onboard oscillator, a soft start feature is not possible. This
is only a concern when operating in the dimming mode. Since PWM dimming is required of LEDs,
the output is essentially turning on and off at a rate of the dimming frequency. In the absence of soft
start, a large spike of current would be observed in the load each time the output is turned on. This
current spike stresses the load possibly decreasing its overall lifetime. The IRPLLED1 includes a
jumper setting to define whether or not the board is being used in the dimming mode. This two
position jumper will allow the designer to either include or exclude the resistor Rout, which is in series
with the output capacitor. The inclusion of this resistor will sufficiently damp the output stage, such
that output current spikes are significantly reduced or eliminated. The presence of such current spikes
may cause the inductor to hum or buzz, the emitted sound will be that of the dimming frequency. The
inrush of current causes mechanical movement in the inductor which can be heard if the PWM signal
is within the audible range of the human ear. The effects of adding in Rout can be seen in Figs. 25 – 28.
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Fig. 25: Load Current Spike Excluding Rout
Iout = 350 mA, Vin = 100 V, Vout = 17 V
Fig. 26: Load Current Ripple Excluding Rout
Iout = 350 mA, Vin = 100 V, Vout = 17 V
Although the inclusion of the resistor will minimize or eliminate the load current spikes, the overall
current regulation and operating frequency will be slightly compromised. The resistor will reduce the
overall effectiveness of the output capacitor which means the switching frequency will marginally
increase. Likewise the output ripple current will also increase, which ultimately leads to a larger
current regulation tolerance. Although the overall current regulation capabilities may decrease with
the inclusion of this resistor, the actual stability of the PWM dimming signal will still be the dominant
factor of the overall output current regulation capabilities.
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Fig. 27: Load Current Spike Including Rout (5 Ω)
Iout = 350 mA, Vin = 100 V, Vout = 17 V
Fig. 28: Load Current Ripple Including Rout (5 Ω)
Iout = 350 mA, Vin = 100 V, Vout = 17 V
Open-circuit protection mode
By using the suggested voltage divider, capacitor, and zener diode, the designer can virtually clamp the
output voltage at any desired value. If there is no load and the output clamp is not utilized, the positive
output terminal will float at the high-side input voltage. The open load clamp is recommended if the
load is disconnected and then reconnected without shutting down the driver. When the load is
reconnected with power on, the load would see the entire bus voltage for a short period of time. The
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open-circuit clamp minimizes the amount of stress seen by the load under such circumstances by
clamping the voltage much lower than VBUS.
IRS2540
Fig. 29: Open-Circuit Protection Scheme
In open-circuit condition, switching will still occur between the HO and LO outputs, whether due to
the output voltage clamp or to the watchdog timer. In this state, rather than regulating the current with
the feedback pin, the output voltage will be loosely regulated via the enable pin. Transients and
switching will be observed at the positive output terminal as seen in Fig. 30. The difference in signal
shape, between the output voltage and the IFB, is due to the capacitor CEN used to form the voltage
clamp. The repetition of the spikes can be reduced by simply increasing the cap size. If VBUS is
significantly larger than the desired output voltage clamp, the output voltage will become a function of
VBUS. This is because of the intrinsic delays of the chip (tLO,on, tLO,off, tHO,on, and tHO,off) along with the
minimum HO on time. If the load is removed, the output will clamp at the desired voltage. Then if the
bus voltage is increased, there could be a proportional change in the clamped voltage. This is not seen
as an issue since the open-circuit clamp is strictly a safety feature to reduce the stress seen by the load,
if disconnected and reconnected without a power down.
Fig. 30: Open-Circuit Fault Signals, with Clamp
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The two resistors ROV1 and ROV2 form a voltage divider for the output, which is then fed into the
cathode of the zener diode DOV. The diode will only conduct, flooding the enable pin, when its
nominal voltage is exceeded. The chip will enter a disabled state once the divider network produces a
voltage at least 2.5 V greater than the zener rating. The capacitor CEN serves only to filter and slow the
transients/switching at the positive output terminal. The clamped output voltage can be determined by
the following analysis.
Vout =
(2.5 V + DZ )(R1 + R2 )
R2
DZ = Zener Diode Nominal Rated Voltage
DOV has been chosen to be a 7.5 V zener diode. ROV2 has also been set to 390 Ω to help provide a low
resistive charging path for CBOOT as previously discussed. It was also decided to clamp the output
voltage at 30 V, this is sufficiently larger than the predefined maximum load voltage of 24 V as to not
cause any erroneous shut-down, while it is also well within the specifications of the 100 V rated output
stage. Having arbitrarily chosen these parameters, ROV1 was calculated as follows:
Vout =
ROV 1 =
(2.5 V + DZ )(ROV 1 + ROV 2 )
ROV 2
Vout ROV 2
30 V ⋅ 390 Ω
− ROV 2 =
− 390 Ω = 780 Ω
(2.5 V + DZ )
(2.5 V + 7.5 V )
ROV 1 ≈ 820 Ω
9. Other design considerations
Filtering
The RC filter on the IFB pin is only used to remove high frequency transients associated with the FET
switching. The corner frequency of this filter was left high enough to prevent any further distortion of
the feedback.
The input filter is a low-pass filter. Its main objective is to prevent ringing of comparable frequency
on Vbus. Exact values of capacitance and inductance are not of critical importance, so long as filtering
is accomplished. In addition to the electrolytic that is used for filtering on the bus, there is also a small
ceramic for high frequency signals. Ceramic capacitors typically have low ESR such that they are
more ideal for high frequency filtering.
VCC filtering was accomplished by typical means of using a small 100 nF ceramic, an additional
electrolytic was used in case of dimming. The larger electrolytic was placed in event a long enable
signal is given. With this larger capacitance, the VCC supply will remain for a prolonged period of time
so the outputs will remain disabled, and the chip will not shut down.
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The ENN filter capacitor was arbitrarily chosen to be 100 nF, this helps slow the rate of switching
during open load conditions.
The IRS254(0,1) was specifically designed to handle low frequency ripples on VBUS. Its capability to
handle such ripple makes it ideal for an offline rectified waveform. However if high voltage (on the
order of 5 V to 10 V) high frequency oscillations (greater than or close to the operating frequency) are
present on VBUS, it is recommended to implement an input filter. If these high frequency signals are
present on VBUS the IRS254(0,1) will still continue to regulate the current through the load, but
abnormal switching of LO and HO may be observed. This poses a problem in terms of switching
losses. As previously discussed, one may need or want to control the operating frequency to control
the systems efficiency, but if LO and HO randomly switch, it may negate all attempts to control the
frequency. Of course the root of this problem can be significantly contributed through PCB layout, but
it is also a function of the load current. If filters on IFB and VCC are not placed correctly these high
frequency ripples will couple to the chip and appear within the control loop. Also if the load current is
on the order of 1 A or 1.5 A, when HO turns on, the load immediately tries to pull the rated current.
Since the circuit supply is not usually close by, the capacitance of the input wire is not enough to
compensate for this large pull of current, this will result in oscillations or change in potential on the
input line. Since the switching element of the circuit is one cause of these oscillations, it is easy to see
how likely the presence of high frequency oscillations are. To alleviate the circuit of such possible
problems, it is much easier to implement an input filter. The input filter will also greatly improve the
circuits EMC performance.
EMC performance
The IRS254(0,1) demo board has not been EMC tested. Input and output filters can be used to reduce
the conducted emissions to below the limits of the applicable EMC standard as needed. All inductors
may require a powdered iron core rather than ferrite, it can handle a much larger current before
saturating, needs are pending on the load current. If EMC is of critical importance, one may prefer to
use one FET and one diode, in contrast to a half-bridge driver. The reverse recovery time for a diode
is inherently shorter than that of a FET. This will help in reducing transients observed in the
switching elements resulting in better EMC performance.
Layout considerations
It is very important when laying out the PCB for the IRS254(0,1) to consider the following points:
1.
2.
3.
4.
5.
6.
7.
CVCC2 and CF must be as close to the IC as possible.
The feedback path should be kept to a minimum without crossing any high frequency lines.
COUT should be as close to the main inductor as possible.
All traces that form the nodes VS and VB should be kept as short as possible.
All signal and power grounds should be kept isolated from each other to prevent noise from
entering the control environment. It’s a general rule of thumb that all components associated
with the IC should be connected to the IC ground with the shortest path possible.
All traces carrying the load current need to be adjusted accordingly.
Gate drive traces should also be kept to a minimum.
10. Design procedure summary
1.
2.
3.
4.
Determine the systems requirements: input/output voltage and current needed
Calculate current sense resistor
Determine the operating frequency required
Select L1 and COUT so that they maintain supply into the load during tHO,on.
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24
5.
6.
7.
8.
Select switching components (FET/freewheeling diode) to minimize power losses
Determine VCC and VBS supply components
Add filtering on the input, IFB and ENN as needed
Fine tune components to achieve desired system performance
11. Bill of materials
Careful selection of the components will significantly increase the reliability of the product,
particularly for the capacitors. These need to be rated for at least 100 ºC and a proper voltage. As in
most electronic power applications, capacitors and resistors are the components most likely to fail due
to stress over time and high operating temperatures. All capacitors connected to the output in this
evaluation board have only a rating of 100 V. These capacitors may also need to be changed if the
load is significantly different from the tested load.
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RD-0608
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Item
Device
Type
Description
Part #
Manufacurer
# of
devices
Reference
1
C
10uF, 25V, Radial
UVZ1E100MDD
Nichicon
1
CVCC1
2
C
100nF, 200V, 1812
VJ1812Y104KXCAT
BC Components
1
3
C
100nF, 50V, 0805
VJ0805Y104KXATW1BC
BC Components
3
4
C
33uF, 100V
UVZ2A330MPD
Nichicon
1
CBUS2
CVCC2, CBOOT,
CEN
COUT
5
C
1nF, 50V, 0805
VJ0805Y102KXACW1BC
BC Components
1
CF
CBUS1
6
C
47uF, 200V
UVZ2D470MHD
Nichicon
1
7
D
200V, 1A
On Semi
1
DBOOT
8
D
Mini Melf
MUR120T3
LL4148
Diodes Inc
2
DEN1, DVCC
9
D
300V, 8A
8ETH03
IR
1
D1
10
DZ
14V, 0.5W, Mini Melf
Diodes Inc
1
DCLAMP
11
DZ
7.5V, 0.5W, Mini Melf
ZMM5244B-7
ZMM5236B-7
Diodes Inc
1
DOV
12
L
470uH
IL 050 321 31 01
VOGT
1
L1
13
L
470uH
RFB1010-471
Coilcraft
1
L2
14
R
10ohm, 1%, 0805
MCR10EZHF10R0
Rohm
1
15
R
0.56ohm, 1%, 1206
ERJ-8RQFR56V
Panasonic
3
16
R
0.47ohm, 1%, 1206
ERJ-8RQFR47V
Panasonic
3
2
RG1
RCS2, RCS4,
RCS6
RCS1, RCS3,
RCS5
RCS7, RCS8
17
R
1.43ohm, 1%, 1206
9C12063A1R43FGHFT
Yageo
18
R
100ohm, 1%, 0805
Rohm
1
RF
19
R
390ohm, 5%, 1/2W, 2010
MCR10EZHF1000
ERJ12ZYJ391
Panasonic
1
ROV2
ROV1
20
R
820ohm, 5%, 1/2W, 2010
ERJ12ZYJ821
Panasonic
1
21
R
1k, 5%, 1W
5073NW1K000J12AFX
Phoenix Passive
1
RS2
22
R
47K, 5%, 1W
Phoenix Passive
1
RS3
23
R
56K, 5%, 1W
5073NW47K00J12AFX
5073NW56K00J12AFX
Phoenix Passive
1
RS1
24
R
5ohm, 5%, 1W
5073NW5R100J12AFX
Phoenix Passive
1
Rout
25
IC
IRS2540/1
IRS2540/1
IR
1
In Socket
26
Socket 8 Pin DIP
2-641260-1
Amp
1
IC1
IRFB17N20D
IR
1
M1
27
M
200V, 16A, TO-220
28
T
PC Compact, red
5005
Keystone
2
T1, T4
29
T
PC Compact, black
5006
Keystone
2
T2, T5
5009
Keystone
1
T3
7-340-1PP-BA
IERC
1
30
T
PC Compact, yellow
31
H
Heatsink
32
B
PCB
33
J
Jumper, 10 Pos.
929836-09-05-ND
3M
1
Jset
34
J
Jumper, 2 Pos.
929836-09-02-ND
3M
1
Jdim
35
SJ
Shorting Jumper
929950-00-ND
3M
3
36
D
Not Fitted
DIFB
37
R
Not Fitted
RIFB
38
M
Not Fitted
39
TH
TO-220 Insulating Thermal PSP600-54
Berquist
1
M2
2
40
W
Shoulder Washer
2
SC
Screw, 4-40, 0.5", Zinc
3049
H346-ND
Berquist
41
Building Fasteners
1
42
N
Nut, 4-40, Hex, Zinc
H216-ND
Building Fasteners
1
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RD-0608
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Enable Signal Generator (not included)
# of
devices
Item
Device
Type
1
C
10uF, 25V, Radial
ECEA1EKG100
Panasonic
1
CVCC3
2
C
100nF, 50V, 0805
VJ0805Y104KXATW1BC
BC Components
1
CVCC4
3
C
1nF, 50V, 0805
VJ0805Y102KXACW1BC
BC Components
2
C1, C2
4
D
Mini Melf
LL4148
Diodes Inc
1
DEN2
5
R
1k, 1%, 0805
MRC10EZHF1001
Rohm
1
R6
6
R
6.8k, 1%, 0805
MRC10EZHF6801
Rohm
1
R5
7
R
10k, 1%, 0805
MRC10EZHF1002
Rohm
1
R4
8
R
20k
MRC10EZHF2002
Rohm
1
R2
9
R
75k
MRC10EZHF7502
Rohm
2
R1, R3
10
R
100k
MRC10EZHF1003
Rohm
2
RS2
11
POT
10k, 10-turn
M64W103KB40
BC Components
1
POT1
12
IC
Comparator
LM393D
Texas Instruments
1
In Socket
2-641260-1
Amp Tyco
Electronics
1
IC2
13
Socket
Description
8 Pin DIP
Part #
Manufacurer
Reference
12. PCB Layout
Top Overlay
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Top Metal
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Bottom Overlay
Bottom Metal
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 9/8/2006
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