ROHM RB162M-40TR

Data Sheet
Schottky Barrier Diode
RB162M-40
Applications
General rectification
Dimensions(Unit : mm)
Land size figure(Unit : mm)
0.85
1.2
3.05
Features
1)Small power mold type.(PMDU)
2)Low IR
3)High reliability
PMDU
Construction
Silicon epitaxial planer
Structure
Taping specifications(Unit : mm)
4.0±0.1
1.81±0.1
Absolute maximum ratings (Ta=25C)
Parameter
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz / 1cyc)
Junction temperature
Storage temperature
Limits
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
8.0±0.2
φ1.0±0.1
3.71±0.1
0.25±0.05
1.75±0.1
φ1.55±0.05
2.0±0.05
3.5±0.05
4.0±0.1
1.5MAX
Unit
V
V
A
A
40
40
1
30
150
40 to 150
C
C
(*1)Mounted on epoxy board. (Tc=100°C MAX )
Electrical characteristics(Ta=25C)
Parameter
Min.
Typ.
Max.
Unit
Forward voltage
Symbol
VF
-
-
0.55
V
Reverse current
IR
-
-
100
μA
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Conditions
IF=1A
VR=40V
2011.04 - Rev.A
1000
REVERSE CURRENT : IR(A)
1000
Ta=125C
100
Ta=-25C
Ta=25C
Ta=75C
10
Ta=25C
1
0.1
Ta=-25C
0.01
0.001
1
100
200
300
400
500
0
600
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
550
30
40
1
0
REVERSE CURRENT : IR(A)
AVE : 517.1mV
AVE:349.9mV
Ta=25C
VR=40V
n=30pcs
8
7
6
5
4
AVE : 2.0A
3
2
1
0
500
VF DISPERSION MAP
REVERSE RECOVERY TIME : trr(ns)
Ifsm
1cyc
150
8.3ms
100
AVE : 68.8A
20
15
10
5
AVE : 7.8ns
25C
180
AVE : 181.3pF
170
160
AVE : 10.2ns
1000
Ifsm
8.3ms 8.3ms
1cyc
100
10
1
0
1
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
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100
100
1
IF=0.5A
1ms
D=1/2
0.9
Rth(j-a)
100
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
On glass-epoxy board
DC
0.8
time
300s
Rth(j-c)
10
1
FORWARD POWER
DISSIPATION : Pf(W)
50
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
100
35
190
80C
IM=10mA
t
30
Ct DISPERSION MAP
Ta=25,80C
IF=0.5A
IR=1A
Irr=0.25*IR
n=20pcs
25
1000
Ifsm
25
Ta=25C
f=1MHz
n=20pcs
trr DISPERSION MAP
150
20
30
IFSM DISPERSION MAP
200
15
200
0
0
10
210
IR DISPERSION MAP
200
5
220
9
520
50
10
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
10
530
510
20
100
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
Ta=25℃
Ta=25C
IF=1A
IF=1.0A
n=30pcs
n=30pcs
540
10
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
0
FORWARD VOLTAGE : V F(mV)
Ta=125C
Ta=75C
PEAK SURGE
FORWARD CURRENT : I FSM(A)
10
100
f=1MHz
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
Ta=150C
FORWARD CURRENT : I F(mA)
Ta=150C
10000
1000
PEAK SURGE
FORWARD CURRENT : I FSM(A)
Data Sheet
RB162M-40
0.7
0.6
Sin(=180)
0.5
0.4
0.3
0.2
0.1
0.1
0.001
0
0.01
0.1
1
10
100
TIME : t(s)
Rth-t CHARACTERISTICS
2/3
1000
0
0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
2011.04 - Rev.A
Data Sheet
Io
0A
0.2
0V
2
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
REVERSE POWER
DISSIPATION : PR (W)
0.15
0.1
D=1/2
DC
0.05
Sin(=180)
T
1.5
D=t/T
VR=20V
Tj=150C
D=1/2
1
Sin(=180)
0.5
2
VR
t
DC
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
RB162M-40
0A
Io
0V
VR
t
DC
T
D=t/T
VR=20V
Tj=150C
1.5
D=1/2
1
Sin(=180)
0.5
On glass-epoxy board
On glass-epoxy board
0
0
0
0
10
20
30
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
40
0
25
50
75
100
125
AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
30
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
No break at 30kV
25
20
15
10
5
0
AVE : 6.2kV
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.04 - Rev.A
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Notes
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R1120A