ROHM RB050L

Data Sheet
Schottky barrier diode
RB050L-60
Applications
General rectification
Dimensions (Unit : mm)
Land size figure (Unit : mm)
2.0
4.2
0.1±0.02
0.1
②
5.0±0.3
①
1.2±0.3
3
4.5±0.2
4
Features
1)Small power mold type. (PMDS)
2)Low IR
2.0
2.6±0.2
PMDS
3)High reliability
2.0±0.2
1.5±0.2
Structure
ROHM : PMDS
JEDEC : SOD-106


Manufacture Date
Construction
Silicon epitaxial planar
Taping specifications (Unit : mm)
2.0±0.05
0.3
φ1.55±0.05
12±0.2
5.5±0.05
5.3±0.1
0.05
9.5±0.1
1.75±0.1
4.0±0.1
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
Absolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
VRM
Reverse voltage (repetitive)
60
VR
Reverse voltage (DC)
60
Average rectified forward current (*1)
3
Io
Average rectified forward current (*2)
2
Io
IFSM
Forward current surge peak (60Hz・1cyc)
70
Junction temperature
150
Tj
Storage temperature
40 to 150
Tstg
(*1) On the Glass epoxy substrate, half sine wave at 180° Tc=69°C MAX
(*2) On the Glass epoxy substrate, half sine wave at 180°
Electrical characteristics (Ta=25°C)
Parameter
Symbol
VF 1
Forward voltage
VF2
Reverse current
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IR
Unit
V
V
A
A
A
°C
°C
Min.
Typ.
Max.
Unit
-
-
0.52
V
-
-
0.56
V
-
-
100
A
1/3
Conditions
IF=2.0A
IF=3.0A
VR=60V
2011.04 - Rev.A
10000
10
1000
Ta=25C
Ta=75C
1
Ta=125C
Ta=-25C
0.1
0.01
1000
f=1MHz
Ta=125C
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(A)
Data Sheet
RB050L-60
100
Ta=75C
10
Ta=25C
1
0.1
Ta=-25C
0.01
100
10
0.001
0
0.1
0.2
0.3
0.4
0.5
0.6
0
10
20
30
40
50
1
60
0
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(V)
VF-IF CHARACTERISTICS
0.49
0.48
0.47
AVE:0.4884V
70
60
AVE：25.93μA
50
40
30
20
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
250
200
AVE:207.4A
1cyc
Ifsm
50
610
600
590
580
570
0
550
AVE:597.5pF
IR DISPERSION MAP
300
100
620
560
VF DISPERSION MAP
Ta=25C
f=1MHz
VR=0V
n=20pcs
630
10
0.46
150
640
Ta=25C
VR=60V
n=50pcs
80
8.3ms
0
Ct DISPERSION MAP
50
300
Ta=25C
IF=0.1A
IR=0.1A
Irr=0.1IR
n=20pcs
40
30
PEAK SURGE
FORWARD CURRENT:IFSM(A)
0.5
90
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25C
IF=3A
n=50pcs
0.51
20
AVE：25.6ns
10
Ifsm
250
8.3ms8.3ms
200
1cyc
150
100
50
0
0
1
trr DISPERSION MAP
IFSM DISRESION MAP
Mounted on epoxy board
Rth(j-a)
Rth(j-c)
10
10
Ifsm
t
1
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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100
100
IM=100mA
1
0.1
0.001
1ms
IF=100mA
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
D=1/2
3
DC
Sin(θ＝180)
2
1
time
300us
0.1
4
FORWARD POWER
DISSIPATION:Pf(W)
100
100
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
5
1000
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃
/W)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1000
30
650
100
REVERSE CURRENT:IR(uA)
FORWARD VOLTAGE:VF(mV)
0.52
5
10
15
20
25
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
0
1000
0
1
2
3
4
5
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
2011.04 - Rev.A
0.6
5.0
0.3
D=1/2
0.2
DC
0.1
Sin(θ＝180)
0
0
10
20
30
40
50
60
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
0A
0V
DC
4.0
Io
t
3.5
3.0
T
VR
D=t/T
VR=30V
Tj=150C
2.5
2.0
1.5
1.0
Sin(θ＝180)
0.5
D=1/2
25
50
Io
0V
t
6
DC
5
4
VR
D=t/T
VR=30V
T Tj=150C
D=1/2
3
2
Sin(θ＝180)
1
0
0.0
0
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0.4
0A
7
4.5
0.5
REVERSE POWER
DISSIPATION:PR (W)
Data Sheet
RB050L-60
75
100
125
AMBIENT TEMPERATURE:Ta(C)
Derating Curve'(Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(C)
Derating Curve'(Io-Tc)
30
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
No break at 30kV
20
15
10
AVE:13.02kV
5
0
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.04 - Rev.A
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R1120A