Data Sheet Schottky Barrier Diode RSX201VA-30 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 1.1 0.17±0.1 0.05 1.9±0.1 3)High reliability 2.5±0.2 Features 1)Small mold type (TUMD2) 2)Low VF& Low IR 0.8 0. 2.0 1.3±0.05 TUMD2 Construction Silicon epitaxial planer Structure 0.8±0.05 ROHM : TUMD2 dot (year week factory) 0.6±0.2 0.1 Taping dimensions (Unit : mm) φ1.5±0.1 0 0.25±0.05 1.43±0.05 Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current Io (On the Almina substrate) Average rectified forward current Io (On the Glass epoxy substrate) IFSM Forward current surge peak （60Hz・1cyc） Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Symbol Forward voltage Reverse current φ1.0±0.2 0 4.0±0.1 Limits 30 30 Unit V V 1.5 A 1.0 A 8 125 - 40 to +125 A °C °C Min. Typ. Max. Unit VF1 - 0.36 0.42 V IF=1A VF2 - 0.40 0.46 V IF=1.5A IR1 - 15 70 60 300 μA μA VR=5V VR=30V IR2 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2.8±0.05 2.75 8.0±0.2 3.5±0.05 1.75±0.1 2.0±0.05 4.0±0.1 0.9±0.08 Conditions 2011.11 - Rev.A Data Sheet RSX201VA-30 10 1000 Tj=150°C Tj=125°C REVERSE CURRENT:IR(mA) FORWARD CURRENT:IF(A) 100 Tj=125°C 1 Tj=75°C 0.1 Tj=25°C 0.01 Tj=−25°C 10 Tj=75°C 1 0.01 0.001 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.7 FORWARD VOLTAGE：VF(V) VF-IF CHARACTERISTICS 1000 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 30 0.4 f=1MHz IF=1.0A Tj=25°C 0.39 FORWARD VOLTAGE:VF(V) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Tj=25°C 0.1 100 0.38 0.37 0.36 0.35 AVE:0.367V 0.34 0.33 0.32 0.31 0.3 10 0 5 10 15 20 25 30 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1000 280 AVE:76.2µA 100 f=1MHz VR=0V CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(µA) VR=30V Tj=25°C 270 260 250 AVE:255.1pF 240 230 10 IR DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Ct DISPERSION MAP 2/4 2011.11 - Rev.A Data Sheet RSX201VA-30 30 40 IFSM 8.3ms 1cyc 30 AVE:28.1A 20 10 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 50 0 IF=0.5A IR=1A Irr=0.25×IR 25 Tj=25°C 20 15 AVE:7.8ns 10 5 0 IFSM DISPERSION MAP trr DISPERSION MAP 1000 100 8.3ms 100 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 8.3ms 1cyc 10 10 IFSM t 1 1 1 10 1 100 1000 100 0.002 On glass-epoxy substrate Rth(j-a) 0.0015 100 Rth(j-c) 10 REVERSE POWER DISSIPATION:PR (W) TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 10 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0.001 D.C. 0.0005 D=1/2 1 0.001 Sin(θ＝180) 0.01 0.1 1 10 100 0 1000 0 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 3/4 2011.11 - Rev.A 3 3 Io 0A 0V 2 T D.C. 0A Io 0V VR t D.C. VR t AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Data Sheet RSX201VA-30 D=t/T VR=15V Tj=125°C D=1/2 1 Sin(θ＝180) 0 T D=t/T VR=15V Tj=125°C 2 D=1/2 Sin(θ＝180) 1 0 0 25 50 75 100 125 0 25 50 75 100 125 CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 AVE：11.4kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A