ROHM RB095B

Data Sheet
Schottky Barrier Diode
RB095B-60
Dimensions(Unit : mm)
Land size figure(Unit : mm)
6.0
6.0
Applications
General rectification
1.6
1.6
3.0 2.0
Features
1) Power mold type. (CPD3)
2) Low VF
3) High reliability
CPD
Construction
Silicon epitaxial planar
2.3 2.3
Structure
(2)
(1)
(3)
Taping dimensions(Unit : mm)
2.0±0.05
φ1.55±0.1
0
8.0±0.1
0.4±0.1
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
60
VRM
60
VR
6
Io
45
IFSM
150
Tj
40 to 150
Tstg
(*1) Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=112C
Forward voltage
Reverse current
Thermal impedance
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Symbol
VF
IR
Min.
-
jc
C
C
Typ.
-
Max.
0.58
-
-
300
μA
-
-
6.0
C/W
1/3
2.7±0.2
Unit
V
V
A
A
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak(60Hz・1cyc)(*1)
Junction temperature
Storage temperature
Electrical characteristic (Ta=25C)
Parameter
10.1±0.1
10.1±0.1
φ3.0±0.1
8.0±0.1
0～0.5
6.8±0.1
13.5±0.2
TL
16.0±0.2
7.5±0.05
2.5±0.1
4.0±0.1
Unit
V
Conditions
IF=3.0A
VR=60V
junction to case
2011.04 - Rev.G
RB095B-60
Data Sheet
Electrical charcteristics curves
REVERSE CURRENT : IR (uA)
Ta=150C
Ta=125C
1
Ta=25C
Ta=75C
Ta=-25C
0.1
10000
Ta=75C
1000
100
Ta=25C
10
1
Ta=-25C
0.1
100
10
1
0.01
0
100 200 300 400 500 600 700 800
0
10
20
30
40
50
0
60
200
REVERSE CURRENT : IR (uA)
540
530
520
AVE:532.4mV
510
AVE:425.2mV
σ:1.6771mV
Ta=25C
VR=60V
n=30pcs
160
140
100
80
60
AVE:20.8uA
40
8.3
150
AVE:73.0A
100
600
550
500
450
50
0
AVE:514.4pF
400
350
0
300
Ct DISPERSION MAP
1000
30
REVERSE RECOVERY TIME : trr (ns)
1cyc
Ifsm
200
650
I R DISPERSION MAP
300
30
Ta=25C
f=1MHz
VR=0V
n=10pcs
700
20
VF DISPERSION MAP
250
750
120
500
20
800
180
Ta=25C
IF=3A
n=30pcs
CAPACITANCE BETWEEN
TERMINALS : Ct (pF)
550
10
REVERSE VOLTAGE : VR (V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE : VR (V)
VR-I R CHARACTERISTICS
FORWARD VOLTAGE : VF (mV)
VF-I F CHARACTERISTICS
FORWARD VOLTAGE : VF (mV)
f=1MHz
100000
0.01
PEAK SURGE
FORWARD CURRENT : IFSM (A)
1000
Ta=125C
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
10
5
AVE:8.30ns
0
PEAK SURGE
FORWARD CURRENT : IFSM (A)
FORWARD CURRENT : IF (A)
Ta=150C
1000000
CAPACITANCE BETWEEN
TERMINALS : Ct (pF)
10
Ifsm
8.3ms 8.3ms
1cyc
100
10
1
trr DISPERSION MAP
IFSM DISPERSION MAP
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Mounted on epoxy board
100 IM=100mA
Ifsm
t
100
10
1
10
TIME : t (ms)
IFSM-t CHARACTERISTICS
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100
1ms
10
IF=5A
Rth(j-a)
time
300us
10
Rth(j-c)
1
0.1
0.001
8
FORWARD POWER
DISSIPATION : Pf (W)
TRANSIENT
THAERMAL IMPEDANCE : Rth (°C/W )
PEAK SURGE
FORWARD CURRENT : IFSM (A)
1000
D=1/2
6
DC
Sin(θ = 180)
4
2
0
0.1
10
TIME : t (s)
Rth-t CHARACTERISTICS
2/3
1000
0
5
10
AVERAGE RECTIFIED
FORWARD CURRENT ： Io (A)
Io-Pf CHARACTERISTICS
15
2011.04 - Rev.F
RB095B-60
Data Sheet
AVERAGE RECTIFIED
FORWARD CURRENT : Io (A)
15
REVERSE POWER
DISSIPATION : PR (W)
Sin( = 180)
10
D=1/2
DC
5
0
0
10
20
30
40
50
60
REVERSE VOLTAGE : VR (V)
VR-PR CHARACTERISTICS
0A
0V
VR
t
DC
T
10
15
Io
D=t/T
VR=30V
Tj=150C
D=1/2
5
Sin(180)
AVERAGE RECTIFIED
FORWARD CURRENT : Io (A)
15
0A
0V
Io
t
DC
10
T
VR
D=t/T
VR=30V
Tj=150C
D=1/2
5
Sin( = 180)
0
0
0
25
50
75
100
125
AMBIENT TEMPERATURE : Ta (C)
Derating Curve (Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE : Tc(C)
Derating Curve(Io-Tc)
ELECTROSTATIC
DISCHARGE TEST ESD (KV)
30
No break at 30kV
25
20
AVE:16.5kV
15
10
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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3/3
2011.04 - Rev.F
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Notes
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R1120A