ROHM RB095B-30

Data Sheet
Schottky barrier Diode
RB095B-30
Dimensions(Unit : mm)
Land size figure(Unit : mm)
6.0
Features
1)Power mold type.(CPD)
2)Low VF
16
1.6
3)High reliability
CPD
Construction
Silicon epitaxial planar
3.0 2.0
6.0
Applications
General rectification
2.3 2.
Structure
(2)
(1) (3)
Taping dimensions(Unit : mm)
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
35
VRM
30
VR
6
Io
35
IFSM
150
Tj
40 to 150
Tstg
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=125C
Unit
V
V
A
A
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current(*1)
Forward current surge peak (60Hz・1cyc)(*1)
Junction temperature
Storage temperature
Electrical characteristic (Ta=25C)
Parameter
Forward voltage
Reverse current
Thermal impedance
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Symbol
VF
IR
Min.
-
jc
C
C
Typ.
-
Max.
0.425
-
-
200
μA
-
-
6.0
C/W
1/3
Unit
V
Conditions
IF=3.0A
VR=30V
junction to case
2011.04 - Rev.F
Data Sheet
RB095B-30
Ta=150C
Ta=150C
f=1MHz
Ta=25C
Ta=75C
Ta=-25C
0.1
CAPACITANCE
BETWEEN TERMINALS : Ct(pF)
Ta=125C
1
10000
100000
REVERSE CURRENT : IR(A)
FORWARD CURRENT:I F(A)
Ta=125C
1000000
10
10000
Ta=75C
1000
100
Ta=25C
10
Ta=-25C
1
0.1
0.01
100
200
300
400
500
600
700
0
5
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
440
10
15
20
25
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
0
30
AVE:402.0mV
410
400
160
140
120
100
AVE:41.0A
80
60
40
390
15
20
25
30
Ta=25C
f=1MHz
VR=0V
n=10pcs
1950
CAPACITANCE
BETWEEN TERMINALS : Ct(pF)
420
10
2000
Ta=25C
VR=30V
n=30pcs
180
REVERSE CURRENT : IR(A)
430
5
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
200
Ta=25C
IF=3A
n=30pcs
100
10
0.01
0
FORWARD VOLTAGE : V F(mV)
1000
1900
1850
1800
1750
1700
AVE:1617.3pF
1650
1600
20
1550
0
1500
Ct DISPERSION MAP
VF DISPERSION MAP
IR DISPERSION MAP
30
1cyc
Ifsm
200
8.3ms
150
AVE:63.0A
100
50
1000
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
AVE:19.3ns
15
10
5
0
PEAK SURGE
FORWARD CURRENT : I FSM(A)
250
REVERSE RECOVERY TIME : trr(ns)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
300
0
Ifsm
8.3ms 8.3ms
1cyc
100
10
1
trr DISPERSION MAP
IFSM DISPERSION MAP
t
100
10
1
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
100
Rth(j-a)
Mounted on epoxy board
IM=100mA
1
0.1
0.001
1ms
4
D=1/2
DC
Rth(j-c)
10
FORWARD POWER
DISSIPATION : Pf(W)
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
Ifsm
100
5
100
1000
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
IF=3A
time
Sin(=180)
3
2
1
300s
0.01
0.1
1
10
TIME : t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
0
0
5
10
15
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
2011.04 - Rev.F
20
20
Sin(=180)
6
D=1/2
4
DC
2
0
15
0A
Io
0V
VR
t
T
DC
10
D=t/T
VR=15V
Tj=150C
D=1/2
5
Sin(180)
10
20
30
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
0V
15
VR
t
T
DC
D=t/T
VR=15V
Tj=150C
10
D=1/2
5
Sin(=180)
0
0
0
Io
0A
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
8
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
10
REVERSE POWER
DISSIPATION : PR (W)
Data Sheet
RB095B-30
0
25
50
75
100
125
AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
30
No break at 30kV
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
20
15
10
5
0
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.04 - Rev.F
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Notes
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R1120A