ROHM RB060M-60

Data Sheet
Schottky Barrier Diode
RB060M-60
Dimensions (Unit : mm)
Applications
General rectification
Land size figure (Unit : mm)
0.1±0.1
0.05
1.2
3.05
3.5±0.2
①
Features
1)Small power mold type. (PMDU)
2)Low IR.
3)High reliability.
2.6±0.1
0.85
1.6±0.1
PMDU
Construction
Silicon epitaxial
0.9±0.1
Structure
0.8±0.1
ROHM : PMDU
JEDEC :SOD-123
Manufacture Date
Taping dimensions (Unit : mm)
4.0±0.1
1.81±0.1
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive)
VR
Reverse voltage (DC)
Average rectified forward current (*1)
Io
IFSM
Forward current surge peak (60Hz・1cyc)
Junction temperature
Tj
Storage temperature
Tstg
(*1)Mounted on epoxy board. Tc=55°C max.
Electrical characteristics (Ta=25C)
Parameter
Symbol
VF1
Forward voltage
VF2
Reverse current
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© 2011 ROHM Co., Ltd. All rights reserved.
IR
Limits
3.71±0.1
φ1.0±0.1
1.5MAX
Unit
V
V
A
A
C
C
60
60
2
30
150
40 to 150
Min.
Typ.
Max.
Unit
-
-
0.52
V
IF=1.0A
-
-
0.61
V
-
-
50
μA
IF=2.0A
VR=60V
1/3
0.25±0.05
8.0±0.2
φ1.55±0.05
1.75±0.1
2.0±0.05
3.5±0.05
4.0±0.1
Conditions
2011.06 - Rev.A
100000
Ta=150℃
Ta=125℃
REVERSE CURRENT : IR(uA)
Ta=75℃
100
Ta=25℃
10
Ta=25℃
1
1000
Ta=150℃
f=1MHz
1000
100
Ta=75℃
10
1
Ta=25℃
0.1
0.01
Ta=25℃
0.1
10
0.001
0
0.2
0.4
0.6
0.8
0
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
10
20
30
40
50
0
60
REVERSE CURRENT : IR(uA)
600
550
AVE:541.0mV
450
15
20
25
30
320
VR=60V
650
10
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
50
IF=2A
500
5
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
700
FORWARD VOLTAGE : V F(mV)
100
f=1MHz
VR=0V
315
310
40
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
FORWARD CURRENT : I F(A)
Ta=125℃
10000
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
10000
1000
Data Sheet
RB060M-60
30
AVE:9.367A
20
10
305
300
295
290
AVE:294pF
285
280
275
400
0
270
VF DISPERSION MAP
30
1cyc
135
85
Ifsm
120
PEAK SURGE
FORWARD CURRENT : I FSM(A)
8.3ms
140
IF=IR=100mA
Irr=0.1IR
20
10
AVE:16.55ns
σ : 0.51
80
60
40
20
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
1000
200
Ifsm
150
time
100
50
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
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100
100
3
Mounted on epoxy board
Rth(j-a)
D=1/2
100
10
Rth(j-c)
1
0.1
0
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
250
8.3ms
1cyc
1
IFSM DISPERSION MAP
1
8.3m
100
0
0
35
FORWARD POWER
DISSIPATION:Pf(W)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
Ifsm
REVERSE RECOVERY TIME : trr(ns)
185
PEAK SURGE
FORWARD CURRENT : I FSM(A)
Ct DISPERSION MAP
IR DISPERSION MAP
0.001
DC
2
Sin(θ＝180)
1
0
0.01
0.1
1
10
TIME : t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
0
1
2
3
4
5
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
2011.06 - Rev.A
Data Sheet
RB060M-60
2
5
30
No break at 30kV
4
Sin(θ＝180)
D=1/2
0.5
DC
0
3
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
1
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
REVERSE POWER
DISSIPATION : PR (W)
1.5
25
DC
2
D=1/2
Sin(θ＝180)
1
20
40
60
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
15
10
AVE:8.30kV
5
0
0
0
20
0
25
50
75
100
125
CASE TEMPARATURE : Tc(℃)
DERATING CURVE (Io-Tc)
3/3
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
150
ESD DISPERSION MAP
2011.06 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A