ROHM RFUS20TM4S_11

Data Sheet
Super Fast Recovery Diode
RFUS20TM4S
Applications
General rectification
Dimensions (Unit : mm)
Structure
+0.3
−0.1
+0.3
−0.1
+0.2
−0.1
(1)
(2)
(3)
+0.4
−0.2
Series
Ultra Fast Recovery
Features
1)Ultra low switching loss
2)High current overload capacity
3)Cathode common single type
+0.1
−0.05
Construction
Silicon epitaxial planer
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage
VRM
Reverse voltage
VR
Conditions
Limits
Unit
Duty0.5
Direct voltage
430
430
V
V
Io
60Hz half sin wave, Resistance load, Tc=68C
20
A
Forward current surge peak
IFSM
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25 C
100
A
Junction temperature
Storage temperature
Tj
Tstg
150
55 to 150
C
C
Average rectified forward current
Electrical characteristics (Tj=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
IR
Reverse recovery time
trr
Thermal resistance
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Rth(j-c)
Conditions
IF=20A
VR=430V
IF=0.5A,IR=1A,Irr=0.25×IR
junction to case
1/3
Min.
Typ.
Max.
-
1.4
1.6
V
-
0.05
24
-
10
35
2
μA
ns
Unit
C/W
2011.06 - Rev.A
Data Sheet
RFUS20TM4S
Electrical characteristic curves
100
100000
10000
REVERSE CURRENT : IR(nA)
10
Tj=25C
Tj=75C
1
100
Tj=25C
1
0
500
1000
1500
2000
0
2500
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
50
10
100 150 200 250 300 350 400 450
0
1350
AVE : 1373mV
1300
1250
Tｊ=25C
VR=430V
n=20pcs
100
AVE : 49.0nA
10
1
1200
200
AVE : 183A
100
1cyc
IFSM
50
8.3ms
REVERSE RECOVERY TIME : trr(ns)
250
20
AVE : 22.9ns
Tｊ=25C
IF=0.5A
IR=1A
Irr=0.25×IR
n=10pcs
15
10
5
Ta=25C
f=1MHz
VR=0V
n=10pcs
370
AVE : 372.3pF
360
350
100
10
IFSM
8.3ms
1
1
7
AVE : 6.05kV
5
4
3
AVE : 0.93kV
2
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
100
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
2/3
TRANSIENT
THAERMAL IMPEDANCE:Rth (C/W)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
FSM(A)
PEAK SURGE
FORWARD CURRENT :
6
0
10
100
10
1
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
100
8.3ms
1cyc.
IFSM DISRESION MAP
time
30
380
0
IFSM
25
1000
25
0
1000
20
Ct DISPERSION MAP
30
300
15
390
IR DISPERSION MAP
VF DISPERSION MAP
10
400
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
1400
REVERSE CURRENT : IR(nA)
Tｊ=25C
IF=20A
n=20pcs
150
5
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
1000
1450
100
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
1500
FORWARD VOLTAGE : V F(mV)
Tj=75C
10
0.1
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT : I FSM(A)
Tj=125C
1000
f=1MHz
Tj=25C
PEAK SURGE
FORWARD CURRENT : I FSM(A)
FORWARD CURRENT : I F(A)
Tj=125C
Tj=150C
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
1000
Tj=150C
Rth(j-c)
1
0.1
0.001
0.01
0.1
1
10
100
1000
TIME : t(s)
Rth-t CHARACTERISTICS
2011.06 - Rev.A
70
35
0A
D.C.
D=0.5
half sin wave
40
D=0.2
D=0.1
30
Io
0V
D=0.8
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
FORWARD POWER
DISSIPATION : Pf(W)
60
50
Data Sheet
RFUS20TM4S
D=0.05
20
10
0
30
D.C.
25
D=0.8
D=0.5
VR
t
T
D=t/T
VR=350V
Tj=150C
20
half sin wave
15
D=0.2
10
D=0.1
5
D=0.05
0
0
5
10
15
20
25
30
35
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
0
30
60
90
120
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
3/3
150
2011.06 - Rev.A
Notice
Notes
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
R1120A