Main Features • • • • • • • • • • • • 8-bit Resolution 500 Msps (min) Sampling Rate Power Consumption: 3.8W Typ 500 mVpp Differential or Single-ended Analog Inputs Differential or Single-ended 50Ω ECL Compatible Clock Inputs ECL or LVDS/HSTL Output Compatibility ADC Gain Adjust Data Ready Output with Asynchronous Reset Gray or Binary Selectable Output Data; NRZ Output Mode Enhanced CBGA Package with Ceramic Lid Evaluation Board: TSEV8308500GL (Detailed Specification on Request) Demultiplexer TS81102G0: Companion Device Available ADC 8-bit 500 Msps Performance • 1.3 GHz Full Power Input Bandwidth • Band Flatness: 0.5 dB up to 500 MHz • SINAD = 45 dB (7.2 Effective Bits), SFDR = 54 dBc TS8308500 at FS = 500 Msps, FIN = 20 MHz • SINAD = 43 dB (7.1 Effective Bits), SFDR = 53 dBc at FS = 500 Msps, FIN = 250 MHz • SINAD = 42 dB (7.0 Effective Bits), SFDR = 52 dBc at FS = 500 Msps, FIN = 500 MHz (-3 dB FS) • 2-tone IMD: TBD (199.5 MHz, 200.5 MHz) at 500 Msps • DNL = ±0.3 LSB INL = ±0.7 LSB • Low Bit Error Rate (10-13) at 500 Msps, Tj = 90°C Applications • Digital Sampling Oscilloscopes • Satellite Receiver • Electronic Countermeasures/Electronic Warfare • Direct RF Down-conversion Screening • Atmel Standard Screening Level • Temperature Range: – 0°C < Tc; Tj < +90°C – -40°C < Tc ; Tj < + 110°C Description The TS8308500 is a monolithic 8-bit analog-to-digital converter, designed for digitizing wide bandwidth analog signals at very high sampling rates of up to 500 Msps. The TS8308500 is using an innovative architecture, including an on-chip Sample and Hold (S/H), and is fabricated with an advanced high-speed bipolar process. The on-chip S/H has a 1.3 GHz full power input bandwidth, providing excellent dynamic performance in undersampling applications (High IF digitizing). Rev. 2193A–BDC–06/03 2193A–BDC–04/03 1 Functional Description Block Diagram Figure 1. Simplified Block Diagram GAIN VIN, VINB Master/Slave Track & Hold Amplifier Resistor Chain Analog Encoding Block 4 Interpolation Stages 5 4 Regeneration Latches 5 4 Error Correction & Decode Logic CLK, CLKB Clock Buffer 8 Output Latches & Buffers 8 GORB DRRB DR, DRB Functional Description DATA, DATAB OR, ORB The TS8308500 is an 8-bit 500 Msps ADC based on an advanced high-speed bipolar technology featuring a cutoff frequency of 25 GHz. The TS8308500 includes a front-end master/slave Track and Hold stage (S/H), followed by an analog encoding stage and interpolation circuitry. Successive banks of latches are regenerating the analog residues into logical data before entering an error correction circuitry and a resynchronization stage followed by 75Ω differential output buffers. The TS8308500 works in fully differential mode from analog inputs up to digital outputs. The TS8308500 features a full-power input bandwidth of 1.3 GHz. Control pin GORB is provided to select either the Gray or Binary data output format. The gain control pin is provided in order to adjust the ADC gain. A Data Ready output asynchronous reset (DRRB) is available on TS8308500. The TS8308500 uses only vertical isolated NPN transistors together with oxide isolated polysilicon resistors, which allow enhanced radiation tolerance (no performance drift measured at 150 kRad total dose). 2 TS8308500 2193A–BDC–04/03 TS8308500 Specifications Absolute Maximum Ratings Table 1. Absolute Maximum Ratings Parameter Symbol Positive supply voltage VCC Digital negative supply voltage DVEE Digital positive supply voltage VPLUSD Negative supply voltage VEE Maximum difference between negative supply voltages DVEE to VEE Analog input voltages Value Unit GND to 6 V GND to -5.7 V GND -0.3 to 2.8 V GND to -6 V 0.3 V VIN or VINB -1 to 1 V Maximum difference between VIN and VINB VIN - VINB -2 to 2 V Digital input voltage VD GORB -0.3 to VCC 0.3 V Digital input voltage VD DRRB VEE -0.3 to 0.9 V Digital output voltage VO VPLUSD -3 to VPLUSD -0.5 V Clock input voltage VCLK or VCLKB -3 to 1.5 V Maximum difference between VCLK and VCLKB VCLK - VCLKB -2 to 2 V Maximum junction temperature Tj 135 °C Storage temperature Tstg -65 to 150 °C Lead temperature (soldering 10s) Tleads 300 °C Note: Comments Absolute maximum ratings are limiting values (referenced to GND = 0V), to be applied individually, while other parameters are within specified operating conditions. Long exposure to maximum ratings may affect device reliability. The use of a thermal heat sink is mandatory (see Thermal characteristics). Recommended Conditions of Use Table 2. Recommended Conditions of Use Recommended Value Parameter Symbol Positive supply voltage VCC Positive digital supply voltage VPLUSD ECL output compatibility Positive digital supply voltage VPLUSD LVDS output compatibility Negative supply voltages VEE, DVEE Differential analog input voltage (full-scale) VIN, VINB VIN - VINB 50Ω differential or single-ended Clock input power level PCLK, PCLKB 50Ω single-ended clock input TJ Commercial grade: “C” Industrial grade “V“ Operating temperature range Comments Min Typ Max Unit 4.75 5 5.25 V – GND – V 1.4 2.4 2.6 V -5.25 -5 -4.75 V ±113 450 ±125 500 ±137 550 mV mVpp 3 4 10 dBm 0 < Tc; Tj < 90 -40 < Tc; Tj < 110 °C 3 2193A–BDC–04/03 Electrical Operating Characteristics VEE = DVEE = -5V; VCC = +5V; VIN -VINB = 500 mVpp Full Scale differential input 50Ω differentially terminated digital outputs Tj (typical) = 70°C Table 3. Electrical Specifications Value Symbol Test Level Min Typ Max Unit Analog Digital (ECL) Digital (LVDS) VCC VPLUSD VPLUSD 1 4 4 4.5 – 1.4 5 0 2.4 5.5 – 2.6 V V V Analog Digital ICC IPLUSD 1 1 – – 420 130 445 145 mA mA VEE 1 -5.5 -5 -4.5 V AIEE DIEE 1 1 – – 185 160 200 180 mA mA PD 1 – 3.9 4.1 W PSRR 4 – 0.5 2 mW – – – – 8 bits Full-scale input voltage range (differential mode) (0V common mode voltage) VIN VINB 4 – -125 -125 – – 125 125 mV mV Full-scale input voltage range (single-ended input option) (14) VIN VINB 4 – -250 – – 0 250 – mV mV Analog input capacitance CIN 4 – 3 3.5 pF Input bias current IIN 4 – 10 20 µA Input Resistance RIN 4 0.5 1 – MΩ Full Power input Bandwidth (-3 dB) FPBW 4 – 1.8 – GHz Small signal input Bandwidth (10% full-scale) SSBW 4 – 1.7 – GHz – – – 4 – – – – Logic 0 voltage VIL – – – -1.5 V Logic 1 voltage VIH – -1.1 – – V Logic 0 current IIL – – 5 50 µA Logic 1 current IIH – – 5 50 µA – – Parameter Note Power Requirements Positive supply voltage Positive supply current Negative supply voltage Negative supply current Analog Digital Nominal power dissipation Power supply rejection ratio Resolution (2) Analog Inputs Clock Inputs Logic compatibility for clock inputs (14) ECL Clock inputs voltages (VCLK or VCLKB): Clock input power level into 50Ω termination 4 ECL or specified clock input power level in dBm dBm into 50Ω – (8) – TS8308500 2193A–BDC–04/03 TS8308500 Table 3. Electrical Specifications (Continued) Value Symbol Test Level Min Typ Max Unit Clock input power level – 4 -2 4 10 dBm Clock input capacitance CCLK 4 – 3 3.5 pF Parameter Digital Outputs Single-ended or differential input mode, 50% clock duty cycle (CLK, CLKB), binary output data format, Tj (typical) = 70°C. Full temperature range: 0°C < Tc; Tj < +90°C or -40°C < Tc ; Tj < 110°C (1)(6) Logic compatibility for digital outputs (Depending on the value of VPLUSD) (14) – – Differential output voltage swings (assuming VPLUSD = 0V): – 4 – – – – 75Ω open transmission lines (ECL levels) – – 1.5 1.620 – V 75Ω differentially terminated – – 0.70 0.825 – V 50Ω differentially terminated – – 0.54 0.660 – V – 4 – – – – Logic 0 voltage VOL – – -1.62 -1.54 V Logic 1 voltage VOH – -0.88 -0.8 – V – 4 – – – – Logic 0 voltage VOL – – -1.41 -1.34 V Logic 1 voltage VOH – -1.07 -1 – V – – – – – – Logic 0 voltage VOL 1, 2 – -1.40 -1.32 V Logic 1 voltage VOH 1, 2 -1.16 -1.10 – V DOS 4 270 300 – mV – 4 – – 1.6 mV/°C Output levels (assuming VPLUSD = 0V) 75Ω open transmission lines: Output levels (assuming VPLUSD = 0V) 75Ω differentially terminated: Output levels (assuming VPLUSD = 0V) 50Ω differentially terminated: Differential Output Swing Output level drift with temperature Note ECL or LVDS – (6) (6) (6) DC Accuracy Single-ended or differential input mode, 50% clock duty cycle (CLK, CLKB), Binary output data format Tj (typical) = 70°C Differential non linearity DNL- 1 -0.6 -0.4 – lsb/V Differential non linearity DNL+ 1 – 0.4 0.6 lsb/V Integral non linearity INL- 1 -1.2 -0.7 – lsb/V Integral non linearity INL+ 1 – 0.7 1.2 lsb/V No missing codes – Guaranteed over specified temperature range Gain – 1, 2 90 98 110 %/V Input offset voltage – 1, 2 -26 -5 26 mV/V (2)(3) (2)(3) (3) 5 2193A–BDC–04/03 Table 3. Electrical Specifications (Continued) Parameter Gain error drift Offset error drift Value Symbol Test Level Min Typ Max Unit – – 4 4 100 40 125 50 150 60 ppm/°C ppm/°C BER 4 – – 1E-13 Error/ sample (2)(4) TS 4 – 0.5 1 ns (2) TOR 4 – 0.5 1 ns (2) (2) Note Transient Performance Bit error rate FS = 500 Msps, FIN = 62.5 MHz ADC settling time VIN -VINB = 400 mVpp Overvoltage recovery time AC Performance Single-ended or differential input and clock mode, 50% clock duty cycle (CLK, CLKB), binary output data format, Tj = 70°C, unless otherwise specified Signal to noise and distortion ratio SINAD – – – – – FS = 500 Msps, FIN = 20 MHz – 4 43 45 – dB FS = 500 Msps, FIN = 500 MHz – 4 42 44 – dB FS = 500 Msps, FIN = 1000 MHz (-1 dBFS) – 4 38 40 – dB FS = 50 Msps, FIN = 25 MHz – 1 43 46 – dB ENOB – – – – – FS = 500 Msps, FIN = 20 MHz – 4 7.0 7.2 – Bits FS = 500 Msps, FIN = 500 MHz – 4 6.8 7.0 – Bits FS = 500 Msps, FIN = 1000 MHz (-1 dBFS) – 4 6.0 6.3 – Bits FS = 50 Msps, FIN = 25 MHz – 1 7.0 7.4 – Bits SNR – – – – – FS = 500 Msps, FIN = 20 MHz – 4 44 46 – dB FS = 500 Msps, FIN = 500 MHz – 4 44 45 – dB FS = 500 Msps, FIN = 1000 MHz (-1 dBFS) – 4 40 43 – dB FS = 50 Msps, FIN = 25 MHz – 1 44 45 – dB |THD| – – – – – 4 50 53 – dB Effective number of bits Signal to noise ratio Total harmonic distortion 6 FS = 500 Msps, FIN = 20 MHz – FS = 500 Msps, FIN = 500 MHz – 4 48 50 – dB FS = 500 Msps, FIN = 1000 MHz (-1 dBFS) – 4 38 40 – dB FS = 50 Msps, FIN = 25 MHz – 1 44 54 – dB (2) (2) TS8308500 2193A–BDC–04/03 TS8308500 Table 3. Electrical Specifications (Continued) Value Symbol Test Level Min Typ Max Unit Note SFDR – – – – – (2) FS = 500 Msps, FIN = 20 MHz – 4 50 56 – dBc FS = 500 Msps, FIN = 500 MHz – 4 50 53 – dBc FS = 500 Msps, FIN = 1000 MHz (-1 dBFS) – 4 38 40 – dBc FS = 50 Msps, FIN = 25 MHz – 1 50 55 – dBc Two-tone inter-modulation distortion IMD 4 – – – – – – -47 -52 – dBc Parameter Spurious free dynamic range FIN1 = 199.5 MHz at FS = 500 Msps, FIN2 = 200.5 MHz at FS = 500 Msps (2) Switching Performance and Characteristics – See Figure 2 and Figure 3 on page 9 Maximum clock frequency FS – 500 – 700 Msps (12) Minimum clock frequency FS 4 10 – 50 Msps (13) Minimum clock pulse width (high) TC1 4 1.71 2 50 ns Minimum clock pulse width (low) TC2 4 1.71 2 50 ns Ta 4 100 +250 400 ps (2) Jitter 4 – 0.4 0.6 ps (rms) (2)(5) TDO 4 1150 1360 1660 ps (9)(10) Output rise/fall time for data (20%-80%) TR/TF 4 250 350 550 ps (9) Output rise/fall time for data ready (20%-80%) TR/TF 4 250 350 550 ps (9) TDR 4 1110 1320 1620 ps (9)(10) TRDR 4 – 720 1000 ps TOD-TDR 4 0 40 80 ps (12) Data to data ready output delay (50% duty cycle) at 1 Gsps (See “Timing Diagrams” on page 9) TD1 4 920 960 1000 ps (2)(13) Data pipeline delay TPD 4 Aperture delay Aperture uncertainty Data output delay Data ready output delay Data ready reset delay Data to data ready – Clock low pulse width (See “Timing Diagrams” on page 9) Notes: (2)(8) (2)(8) (7)(11) 4 clock cycles 1. 2. 3. 4. 5. 6. 7. 8. Differential output buffers are internally loaded by 75Ω resistors. Buffer bias current = 11 mA See “Definition of Terms” on page 46 Histogram testing based on sampling of a 10 MHz sinewave at 50 Msps Output error amplitude < ±4 lsb around worst code Maximum jitter value obtained for single-ended clock input on the die (chip on board): 200 fs Digital output back termination options depicted in Application Notes At 500 Msps, 50/50 clock duty cycle, TC2 = 2 ns (TC1). TDR - TOD = -100 ps (typ) does not depend on the sampling rate Specified loading conditions for digital outputs: - 50Ω or 75Ω controlled impedance traces properly 50/75Ω terminated, or unterminated 75Ω controlled impedance traces - Controlled impedance traces far end loaded by 1 standard ECLinPS register from Motorola. (i.e.: 10E452) (Typical input parasitic capacitance of 1.5 pF including package and ESD protections.) 9. Termination load parasitic capacitance derating values: - 50Ω or 75Ω controlled impedance traces properly 50/75Ω terminated: 60 ps/pF or 75 ps per additionnal ECLinPS load 7 2193A–BDC–04/03 - Unterminated (source terminated) 75Ω controlled impedance lines: 100 ps/pF or 150 ps per additionnal ECLinPS termination load 10. Apply proper 50/75Ω impedance traces propagation time derating values: 6 ps/mm (155 ps/inch) for TSEV8308500GL Evaluation Board 11. Values for TOD and TDR track each other over temperature, (1% variation for TOD-TDR per 100°C temperature variation). Therefore TOD-TDR variation over temperature is negligible. Moreover, the internal (on-chip) and package skews between each Data TODs and TDR effect can be considered negligible. Consequently, minimum values for TOD and TDR are never more than 100 ps apart. The same is true for the TOD and TDR maximum values (see Advanced Application Notes about “TOD-TDR Variation Over Temperature” on page 22). 12. Min value guarantees performance. Max value guarantees functionality 13. Min value guarantees functionality. Max value guarantees performance 14. Refer to product Application Notes 8 TS8308500 2193A–BDC–04/03 TS8308500 Timing Diagrams Figure 2. TS8308500 Timing Diagram (500 Msps Clock Rate), Data Ready Reset, Clock Held at LOW Level TA = 250 ps X (VIN, VINB) X X N+1 N N-1 X N+2 X N+3 X N+5 X N+4 TC = 1000 ps TC1 TC2 (CLK, CLKB) DIGITAL OUTPUTS TOD = 1360 ps TPD: 4.0 Clock periods 1360 ps DATA N-5 1000 ps DATA N-4 DATA N-3 DATA N-2 DATA N-1 DATA N+1 TD1 = TC1+TDR-TOD = TC1-40 ps = 460 ps TDR = 1320 ps TDR = 1320 ps DATA N Data Ready (DR, DRB) TD2 = TC2+TOD-TDR = TC2+40 ps = 540 ps TRDR = 720 ps DRRB 1 ns (min) Figure 3. TS8308500 Timing Diagram (500 Msps Clock Rate), Data Ready Reset, Clock Held at HIGH Level TA = 250 ps X (VIN, VINB) N XN-1 N+1 N+2 X X X X X N+3 N+4 N+5 TC = 1000 ps TC1 TC2 (CLK, CLKB) TPD: 4.0 Clock periods 1360 ps DIGITAL OUTPUTS DATA N-5 1000 ps DATA N-4 TDR = 1320 ps TDR = 1320 ps DATA N-3 TOD = 1360 ps DATA N-2 DATA N-1 DATA N DATA N+1 TD1 = TC1+TDR-TOD = TC1-40 ps = 460 ps Data Ready (DR, DRB) TRDR = 720 ps TD2 = TC2+TOD-TD = TC2+40 ps = 540 DRRB 1 ns (min) 9 2193A–BDC–04/03 Explanation of Test Levels Table 4. Explanation of Test Levels(3) Num Note: Characteristics 1 100% production tested at +25°C(1) (for “C” Temperature range(2)) 2 100% production tested at +25°C(1), and sample tested at specified temperatures (for “V” Temperature range(2)) 3 Sample tested only at specified temperatures 4 Parameter is guaranteed by design and characterization testing (thermal steady-state conditions at specified temperature) 5 Parameter is a typical value only 1. Unless otherwise specified, all tests are pulsed tests : therefore TC = TA where TC and TA are case and ambient temperature. 2. Refer to “Ordering Information” on page 48. 3. Only min and max values are guaranteed (typical values are issued from characterization results). Functions Description Table 5. Functions Description Name Function VCC Positive power supply VEE Analog negative power supply VPLUSD Digital positive power supply GND Ground VIN, VINB Differential analog inputs CLK, CLKB Differential clock inputs <D0:D7> <D0B:D7B> Differential output data port DR, DRB Differential data ready outputs VCC = +5V VPLUSD = +0V (ECL) VPLUSD = +2.4V (LVDS) VIN OR VINB ORB CLK CLKB D0 16 D0B TS8308500 GAIN DR GORG OR, ORB Out of range outputs GAIN ADC gain adjust GORB Gray or binary digital output select DIOD/DRRB Die junction temperature measurement/ asynchronous data ready reset 10 D7 D7B DRB DIOD/ DRRB DVEE = -5V VEE = -5V GND TS8308500 2193A–BDC–04/03 TS8308500 Digital Output Coding NRZ (Non Return to Zero) mode, ideal coding: does not include gain, offset, and linearity voltage errors. Table 6. Digital Output Coding Digital Output Voltage Level Binary GORB = VCC or Floating Gray GORB = GND Out of Range > +251 mV > Positive full-scale + 1/2 LSB 11111111 10000000 1 +251 mV +249 mV Positive full-scale + 1/2 LSB Positive full-scale - 1/2 LSB 11111111 11111110 10000000 10000001 0 0 +126 mV +124 mV Positive 1/2 scale + 1/2 LSB Positive 1/2 scale - 1/2 LSB 11000000 10111111 10100000 11100000 0 0 +1 mV -1 mV Bipolar zero + 1/2 LSB Bipolar zero - 1/2 LSB 10000000 01111111 11000000 01000000 0 0 -124 mV -126 mV Negative 1/2 scale + 1/2 LSB Negative 1/2 scale - 1/2 LSB 01000000 00111111 01100000 00100000 0 0 -249 mV -251 mV Negative full-scale + 1/2 LSB Negative full-scale - 1/2 LSB 00000001 00000000 00000001 00000000 0 0 < -251 mV < Negative full-scale - 1/2 LSB 00000000 00000000 1 Differential Analog Input 11 2193A–BDC–04/03 Typical Characterization Results 50/50 clock duty cycle, Binary output coding, Tj = 70°C, single-ended analog and clock inputs, unless otherwise specified. Static Linearity FS = 50 Msps/FIN = 10 MHz Figure 4. Integral Non-linearity Note: Clock frequency = 50 Msps; signal frequency = 10 MHz Positive peak: -0.68 LSB; Negative peak: -0.69 LSB Figure 5. Differential Non-linearity Note: 12 Clock frequency = 50 Msps; signal frequency = 10 MHz; Positive peak: 0.3 LSB; negative peak: -0.29 LSB TS8308500 2193A–BDC–04/03 TS8308500 Effective Number of Bits Versus Power Supply Variation Figure 6. Effective Number of Bits = f (VEEA); FS = 500 Msps; FIN = 100 MHz 8 7 ENOB (bits) 6 5 4 3 2 1 0 -7 -6.5 -6 -5.5 -5 -4.5 -4 VEEA (V) Figure 7. Effective Number of Bits = f (VCC); FS = 500 Msps; FIN = 100 MHz 8 7 ENOB (bits) 6 5 4 3 2 1 0 3 3.5 4 4.5 5 5.5 6 6.5 7 VCC (V) Figure 8. Effective Number of Bits = f (VEED); FS = 500 Msps; FIN = 100 MHz 8 7 ENOB (bits) 6 5 4 3 2 1 0 -6 -5.5 -5 -4.5 -4 -3.5 -3 VEED (V) 13 2193A–BDC–04/03 Typical FFT Results Figure 9. Spectrum for FS = 500 Msps, FIN = 498 MHz (Full Scale Input) Note: Acquisition of 4096 points; THD = -49.67 dBc; Fs = 500 Msps; SINAD = 44.01 dB; FIN = 498 MHz; SFDR = -54.31 dBc; SFSR = -0.94 dB; ENOB = 7.13 bits; SNR = 45.39 dB Figure 10. Reconstructed Signal for FS = 500 Msps, FIN = 498 MHz (Full Scale Input) LSB 250 200 150 100 50 0 0 Note: 14 1 ns Acquisition of 4096 samples; FS = 500 Msps; Amplitude: 0.221V (114.5 LSB); FIN = 498 MHz; Offset: 0V (122.5 LSB) TS8308500 2193A–BDC–04/03 TS8308500 Figure 11. Spectrum for FS = 500 Msps, FIN = 250 MHz (Full Scale Input) Figure 12. Reconstructed Signal for FS = 500 Msps, FIN = 250 MHz (Full Scale Input) Lsb 250 200 150 100 50 0 0 Note: 1 2 3 ns Acquisition of 4096 samples; FS = 500 Msps ; Amplitude: 0.189V (113.5 LSB); FIN = 250 MHz ; Offset: 0V (122.5 LSB) 15 2193A–BDC–04/03 Dynamic Performance Versus Analog Input Frequency Figure 13. SFDR: Fs = 500 Msps, FIN = 20 MHz up to 1000 MHz, -1dB Full Scale Input, Tj = 70°C SFDR 60 dBc 55 50 45 40 2 100 200 300 400 500 600 700 800 900 1000 Fin (MHz) Figure 14. THD: Fs = 500 Msps, FIN = 20 MHz up to 1000 MHz, -1dB Full Scale Input, Tj = 70°C THD -60 dBc -50 -40 -30 -20 -10 0 2 100 200 300 400 500 600 700 800 900 1000 Fin (MHz) Figure 15. SINAD and SNR: Fs = 500 Msps, FIN = 20 MHz up to 1000 MHz, -1dB Full Scale Input, Tj = 70°C SINAD SNR 48 46 44 dB 42 40 38 36 2 100 200 300 400 500 600 700 800 900 1000 Fin (MHz) 16 TS8308500 2193A–BDC–04/03 TS8308500 Figure 16. Fs = 500 Msps, FIN = 20 MHz up to 1000 MHz, -1dB Full Scale Input, Tj = 70°C ENOB 7,5 Bits 7 6,5 6 5,5 2 100 200 300 400 500 600 700 800 900 1000 Fin (MHz) SFDR and THD Versus Sampling Frequency Figure 17. Analog Input Frequency: FIN = 250 MHz and Fs = 200 Msps to 1400 Msps SFDR THD -60 dBc -50 -40 -30 -20 -10 200 400 600 800 1000 1200 1400 Fs (Msps) Effective Number of Bits (ENOB) Versus Sampling Frequency Figure 18. Analog Input Frequency: FIN = 250 MHz and Fs = 200 Msps to 1400 Msps ENOB 8 7 Bits 6 5 4 3 2 1 200 400 600 800 1000 1200 1400 Fs Msps 17 2193A–BDC–04/03 Sinad and SNR Versus Sampling Frequency Figure 19. Analog Input Frequency: FIN = 250 MHz and FS = 200 Msps to 1400 Msps SINAD SNR 50 45 40 dB 35 30 25 20 15 10 200 400 600 800 1000 1200 1400 Fs (Msps) TS8308500 ADC Performances Versus Junction Temperature Figure 20. SFDR: FS = 500 Msps, FIN = 250 MHz, -1dB Full Scale Input, Tj = 0°C to 125°C SFDR 53.0 52.5 dBc 52.0 51.5 51.0 50.5 50.0 0 25 50 75 100 125 Tj(°C) 18 TS8308500 2193A–BDC–04/03 TS8308500 Figure 21. THD: FS = 500 Msps, FIN = 250 MHz, -1dB Full Scale Input, Tj = 0°C to 125°C THD -60 -50 dBc -40 -30 -20 -10 0 0 25 50 75 100 125 Tj (°C) Figure 22. SINAD and SNR: FS = 500 Msps, FIN = 250 MHz, -1dB Full Scale Input, Tj = 0°C to 125°C SNR SINAD 46.5 46.0 dB 45.5 45.0 44.5 44.0 43.5 0 25 50 75 100 125 Tj (°C) Figure 23. ENOB: FS = 500 Msps, FIN = 250 MHz, -1dB Full Scale Input, Tj = 0°C to 125°C ENOB 7.30 7.25 Bits 7.20 7.15 7.10 7.05 7.00 0 25 50 Tj (°C) 75 100 125 19 2193A–BDC–04/03 Figure 24. Power Consumption Versus Junction Temperature: FS = 500 Msps; FIN = 250 MHz; Duty cycle = 50% 5 Power Consumption (W) 4 3 2 1 0 -40 -20 0 20 40 60 80 100 120 140 160 Temperature (°C) Typical Full Power Input Bandwidth Figure 25. Band Flatness at 1.3 GHz ; -3 dB (-2 dBm Full Power Input) 0 -1 SFSR (dB FS) -2 -3 -4 -5 -6 0 200 400 600 800 1000 1200 1400 1600 Frequency (MHz) 20 TS8308500 2193A–BDC–04/03 TS8308500 ADC Step Response Test pulse input characteristics: 20% to 80% input full scale and rise time ~ 200 ps. Note: This step response was obtained with the TSEV8308500 chip on-board (device in die form). Figure 26. Test Pulse Digitized with 20 GHz DSO 250 200 mV 150 100 Vpp ~ 260 mV Tr ~ 270 ps 50 mV/div 50 600 ps/div 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Time (ns) Figure 27. Same Test Pulse Digitized with TS8308500 ADC 200 ADC 150 Tr ~ 330 ps 50 codes/div (Vpp ~ 260 mV) 100 600 ps/div 50 0 0 0.6 1.2 1.8 2.4 3.0 3.6 4.2 4.8 5.4 6.0 Time (ns) Note: Ripples are due to the test setup (they are present on both measurements). 21 2193A–BDC–04/03 TS8308500 Main Features Timing Information Timing Value for TS8308500 Timing values as defined in Table 3 on page 4 are advanced data, issuing from electric simulations and are the first characterization results fitted with measurements. Timing values are given for CBGA68 package inputs/outputs, taking into account package internal controlled impedance traces propagation delays, and specified termination loads. Propagation delays in 50/75Ω impedance traces are NOT taken into account for TOD and TDR. Apply proper derating values corresponding to termination topology. The min/max timing values are valid over the full temperature range in the following conditions: Propagation Time Considerations – Specified termination load (differential output Data and Data Ready): 50Ω resistor in parallel with 1 standard ECLinPS register from Motorola, (i.e.: 10E452). (Typical ECLinPS inputs shows a typical input capacitance of 1.5 pF (including package and ESD protections). If addressing an output Dmux, take care if some Digital outputs do not have the same termination load and apply corresponding derating value given below – Output Termination Load derating values for TOD and TDR: ~ 35 ps/pF or 50 ps per additional ECLinPS load – Propagation time delay derating values have also to be applied for TOD and TDR: ~ 6 ps/mm (155 ps/inch) for TSEV8308500 Evaluation Board Apply proper time delay derating value if a different dielectric layer is used. TOD and TDR timing values are given from pin to pin and DO NOT include the additional propagation times between device pins and input/output termination loads. For the TSEV8308500 Evaluation Board, the propagation time delay is 6 ps/mm (155 ps/inch) corresponding to 3.4 (at 10 GHz) dielectric constant of the RO4003 used for the Board. If a different dielectric layer is used (for instance Teflon), use appropriate propagation time values. TD does NOT depend on propagation times because it is a differential data. (TD is the time difference between Data Ready output delay and digital Data output delay) TD is also the most straightforward data to measure, again because it is differential: TD can be measured directly onto termination loads, with matched oscilloscopes probes. TOD-TDR Variation Over Temperature Values for TOD and TDR track each other over temperature (1% variation for TOD-TDR per 100°C temperature variation). Therefore TOD-TDR variation over temperature is negligible. Moreover, the internal (on-chip) and package skews between each Data TODs and TDR affect can be considered as negligible. 22 TS8308500 2193A–BDC–04/03 TS8308500 Consequently, minimum values for TOD and TDR are never more than 100 ps apart. The same is true for the TOD and TDR maximum values. In other words: – If TOD is at 1150 ps, TDR will not be at 1620 ps (maximum time delay for TDR). – If TOD is at 1660 ps, TDR will not be at 1110 ps (minimum time delay for TDR). However, external TOD-TDR values may be dictated by total digital data skews between every TODs (each digital data) and TDR: MCM board , bonding wires and output lines lengths differences, and output termination impedance mismatches. The external (on board) skew effect has NOT been taken into account for the specification of the minimum and maximum values for TOD-TDR. Principle of Operation The Analog input is sampled on the rising edge of the external clock input (CLK, CLKB) after TA (aperture delay) of typically 250 ps . The digitized data is available after 4 clock periods latency (pipeline delay (TPD), on clock rising edge, after 1360 ps typical propagation delay TOD.) The Data Ready differential output signal frequency (DR, DRB) is half the external clock frequency, that is it switches at the same rate as the digital outputs. The Data Ready output signal (DR, DRB) switches on the external clock falling edge after a propagation delay TDR of typically 1320 ps. A Master Asynchronous Reset input command DRRB (ECL compatible single-ended input) is available for initializing the differential Data Ready output signal (DR, DRB). This feature is mandatory in certain applications using interleaved ADCs or using a single ADC with demultiplexed outputs. Actually, without Data Ready signal initialization, it is impossible to store the output digital data in a defined order. Principle of Data Ready Signal Control by DRRB Input Command Data Ready Output Signal Reset The Data Ready signal is reset on the falling edge of the DRRB input command, on the ECL logical low level (-1.8V). DRRB may also be tied to VEE = -5V for Data Ready output signal Master Reset. So long as DRRB remains at a logical low level, (or tied to VEE = -5V), the Data Ready output remains at logical zero and is independent of the external free running encoding clock. The Data Ready output signal (DR, DRB) is reset to logical zero after TRDR = 720 ps typical. TRDR is measured between the -1.3V point of the falling edge of the DRRB input command and the zero crossing point of the differential Data Ready output signal (DR, DRB). The Data Ready Reset command may be a pulse of 1 ns minimum time width. 23 2193A–BDC–04/03 Data Ready Output Signal Restart The Data Ready output signal restarts on the DRRB command’s rising edge, ECL logical high levels (-0.8V). DRRB may also be grounded, or is allowed to float, for a normal free running Data Ready output signal. The Data Ready signal restart sequence depends on the logical level of the external encoding clock, at DRRB rising edge instant: • The DRRB rising edge occurs when the external encoding clock input (CLK,CLKB) is LOW: The Data Ready output’s first rising edge occurs after half a clock period on the clock falling edge, after a delay time TDR = 1320 ps already defined hereabove. • The DRRB rising edge occurs when external encoding clock input (CLK,CLKB) is HIGH: The Data Ready output’s first rising edge occurs after one clock period on the clock falling edge, and a delay TDR = 1320 ps. Consequently, as the analog input is sampled on the clock’s rising edge, the first digitized data corresponding to the first acquisition (N) after a Data Ready signal restart (rising edge) is always strobed by the third rising edge of the Data Ready signal. The time delay (TD1) is specified between the last point of a change in the differential output data (zero crossing point) to the rising or falling edge of the differential Data Ready signal (DR,DRB) (zero crossing point). Note: 1. For normal initialization of the Data Ready output signal, the external encoding clock signal frequency and level must be controlled. The minimum encoding clock sampling rate for the ADC is 10 Msps and consequently the clock cannot be stopped. 2. One single pin is used for both the DRRB input command and die junction temperature monitoring. Pin denomination will be DRRB/DIOD. (On former versions the denomination was DIOD.). Temperature monitoring and Data Ready control by DRRB is not possible simultaneously. Analog Inputs (VIN, VINB) The analog input Full Scale range is 0.5V, or -2 dBm into the 50Ω termination resistor. In differential mode input configuration, that means 0.25V on each input, or ±125 mV around 0V. The input common mode is ground. The typical input capacitance is 3 pF for TS8308500 in a CBGA package. Differential Input Voltage Span Figure 28. Differential Input Voltage Span [mV] VIN 125 500 mV Full Scale analog input 250 mV VINB -250 mV -125 0V t (VIN, VINB) = ±250 mV = 500 mV diff 24 TS8308500 2193A–BDC–04/03 TS8308500 Differential Versus Single-ended Analog Input Operation The TS8308500 can operate at full speed in either the differential or single-ended configuration. This is explained by the fact the ADC uses a high input impedance differential preamplifier stage, (preceeding the sample and hold stage), which has been designed in order to be entered either in differential mode or single-ended mode. This is true so long as the out-of-phase analog input pin VINB is 50Ω terminated very closely to one of the neighboring shield ground pins (52, 53, 58, 59) which constitute the local ground reference for the in-phase analog input pin (VIN). Thus the differential analog input preamplifier will fully reject the local ground noise (and any capacitively and inductively coupled noise) as common mode effects. In a typical single-ended configuration, enter on the (VIN) input pin, with the inverted phase input pin (VINB) grounded through the 50Ω termination resistor. In a single-ended input configuration, the in-phase input amplitude is 0.5V, centered on 0V (or -2 dBm into 50Ω). The inverted phase input is at ground potential through the 50Ω termination resistor. However, dynamic performances can be somewhat improved by entering either analog or clock inputs in differential mode. Typical Single-ended Analog Input Configuration Figure 29. Typical Single-ended Analog Input Configuration [mV] VIN or VINB double pad (pins 54, 55 or 56, 57) VIN 250 500 mV Full Scale analog input VIN or VINB 500 mV VINB = 0V VINB -250 1 MΩ 3 pF t VIN = ±250 mV = 500 mV diff Clock Inputs (CLK, CLKB) 50Ω (on package) 50Ω reverse termination The TS8308500 can be clocked at full speed without noticeable performance degradation in either the differential or single-ended configuration. This is explained by the fact the ADC uses a differential preamplifier stage for the clock buffer, which has been designed in order to be entered either in differential or single-ended mode. The recommended sinewave generator characteristics are typically -120 dBc/Hz phase noise floor spectral density, at 1 kHz from carrier, assuming a single tone 4 dBm input for the clock signal. Single-ended Clock Input (Ground Common Mode) Although the clock inputs were intended to be driven differentially with nominal -0.8V/-1.8V ECL levels, the TS8308500 clock buffer can manage a single-ended sinewave clock signal centered around 0V. This is the most convenient clock input configuration as it does not require the use of a power splitter. 25 2193A–BDC–04/03 No performance degradation (i.e.: due to timing jitter) is observed in this particular singleended configuration up to 500 Msps Nyquist Conditions (FIN = 250 MHz). This is all the more so since the inverted phase clock input pin is 50Ω terminated on the package (that is very close to one of the neighboring shield ground pins, which constitutes the local ground reference for the inphase clock input). Thus the TS8308500 differential clock input buffer will fully reject the local ground noise (and any capacitively and inductively coupled noise) as common mode effects. Moreover, a very low phase noise sinewave generator must be used for enhanced jitter performance. The typical in-phase clock input amplitude is 1V, centered on 0V (ground) common mode. This corresponds to a typical clock input power level of 4 dBm into the 50Ω termination resistor. Do not exceed 10 dBm to avoid saturation of the preamplifier input transistors. Figure 30. Single-ended Clock Input (Ground Common Mode): VCLK common mode = 0V; VCLKB = 0V; 4 dBm typical clock input power level (into 50Ω termination resistor) CLK or CLKB double pad (pins 37, 38 or 39, 40) [V] VCLK +0.5V CLK or CLKB VCLK = 0V 1 MΩ 50Ω (on package) 0.4 pF VCLK -0.5V Note: t 50Ω reverse termination Do not exceed 10 dBm into the 50Ω termination resistor for the single clock input power level. Differential ECL Clock Input The clock inputs can be driven differentially with nominal -0.8V/-1.8V ECL levels. In this mode, a low-phase noise sinewave generator can be used to drive the clock inputs, followed by a power splitter (hybrid junction) in order to obtain 180° out of phase sinewave signals. Biasing tees can be used for offseting the common mode voltage to ECL levels. Note: As the biasing tees propagation times are not matching, a tunable delay line is required in order to ensure the signals are 180° out of phase, especially at fast clock rates in the 500 Msps range. Figure 31. Differential Clock Inputs (ECL Levels) [mV] -0.8V CLK or CLKB double pad (pins 37, 38 or 39, 40) VCLK VCLKB CLK or CLKB Common mode = -1.3V 1 MΩ 50Ω (on package) 0.4 pF -2V -1.8V 26 t 50Ω reverse termination TS8308500 2193A–BDC–04/03 TS8308500 Single-ended ECL Clock Input In a single-ended configuration, enter at CLK (resp. CLKB) pin, with the inverted phase clock input pin CLKB (respectively CLK) connected to -1.3V through the 50Ω termination resistor. The in-phase input amplitude is 1V, centered on -1.3V common mode. Figure 32. Single-ended Clock Input (ECL): VCLK common mode = -1.3V; VCLKB = -1.3V [V] -0.8V VCLK VCLKB = -1.3V -1.8V Noise Immunity Information t Circuit noise immunity performance begins at design level. Efforts have been made to the design to make it as insensitive as possible to chip environment perturbations resulting from the circuit itself or induced by external circuitry. (Cascode stage isolation, internal damping resistors, clamps, internal (on-chip) decoupling capacitors.) Furthermore, the fully differential operation from the analog input up to the digital outputs provides enhanced noise immunity with common mode noise rejection. Common mode noise voltage induced on the differential analog and clock inputs will be canceled out by these balanced differential amplifiers. Moreover, proper active signal shielding has been provided on the chip to reduce the amount of coupled noise on the active inputs. The analog inputs and clock inputs of the TS8308500 device have been surrounded by ground pins, which must be directly connected to the external ground plane. Digital Outputs The TS8308500 differential output buffers are internally loaded with 75Ω. The 75Ω resistors are connected to the digital ground pins through a -0.8V level shift diode (see Figure 33, Figure 34, Figure 35 on page 29). The TS8308500 output buffers are designed for driving 75Ω (default) or 50Ω properly terminated impedance lines or coaxial cables. An 11 mA bias current flowing alternately into one of the 75Ω resistors when switching ensures a 0.825V voltage drop across the resistor (unterminated outputs). The VPLUSD positive supply voltage allows the adjustment of the output common mode level from -1.2V (VPLUSD = 0V for ECL output compatibility) to +1.2V (VPLUSD = 2.4V for LVDS output compatibility). Therefore, the single-ended output voltages vary approximately between -0.8V and -1.625V, (outputs unterminated), around -1.2V common mode voltage. 27 2193A–BDC–04/03 Three possible line driving and back-termination scenarios are proposed (assuming VPLUSD = 0V): 1. 75Ω impedance transmission lines, 75Ω differentially terminated (Figure 33): Each output voltage varies between -1V and -1.42V (respectively +1.4V and +1V), leading to ±0.41V = 0.825V in differential, around -1.21V (respectively +1.21V) common mode for VPLUSD = 0V (respectively 2.4V) 2. 50Ω impedance transmission lines, 50Ω differentially terminated (Figure 34): Each output voltage varies between -1.02V and -1.35V (respectively +1.38V and +1.05V), leading to ±0.33V = 660 mV in differential, around -1.18V (respectively +1.21V) common mode for VPLUSD = 0V (respectively 2.4V) 3. 75Ω impedance open transmission lines (Figure 35): Each output voltage varies between -1.6V and -0.8V (respectively +0.8V and +1.6V), which are true ECL levels, leading to ±0.8V = 1.6V in differential, around -1.2V (respectively +1.2V) common mode for VPLUSD = 0V (respectively 2.4V) Therefore, it is possible to directly drive high input impedance storing registers, without terminating the 75Ω transmission lines. In the time domain, that means that the incident wave will reflect at the 75Ω transmission line output and travel back to the generator (i.e.: the 75Ω data output buffer). As the buffer output impedance is 75Ω, no back reflection will occur. Note: This is no longer true if a 50Ω transmission line is used, as the latter is not matching the buffer 75Ω output impedance. Each differential output termination length must be kept identical. It is recommended to decouple the midpoint of the differential termination with a 10 nF capacitor to avoid common mode perturbation in case of slight mismatch in the differential output line lengths. Too large mismatches (keep < a few mm) in the differential line lengths will lead to switching currents flowing into the decoupling capacitor leading to switching ground noise. The differential output voltage levels (75Ω or 50Ω termination) are not ECL standard voltage levels, however, it is possible to drive standard logic ECL circuitry like the ECLinPS logic line from Motorola®. 28 TS8308500 2193A–BDC–04/03 TS8308500 Differential Output Loading Configurations (Levels for ECL Compatibility) Figure 33. Differential Output: 75Ω Terminated VPLUSD = 0V -0.8V Out 75Ω -1V/-1.41V 75Ω 75Ω Differential output: +0.41V = 0.825V 75Ω + - 75Ω impedance 10 nF Common mode level: -1.2V (-1.2V below VPLUSD level) 75Ω OutB -1.41V/-1V Out -1.02V/-1.35V 11 mA DVEE Figure 34. Differential Output: 50Ω Terminated VPLUSD = 0V -0.8V 75Ω 75Ω 50Ω Differential output: +0.33V = 0.660V 50Ω + - 50Ω impedance 10 nF Common mode level: -1.2V (-1.2V below VPLUSD level) 50Ω OutB -1.35V/-1.02V Out -0.8V/-1.6V 11 mA DVEE Figure 35. Differential Output: Open Loaded VPLUSD = 0V -0.8V 75Ω 75Ω 75Ω + - 75Ω impedance Differential output: +0.8V = 1.6V Common mode level: -1.2V (-1.2V below VPLUSD level) OutB -1.6V/-0.8V 11 mA DVEE 29 2193A–BDC–04/03 Differential Output Loading Configurations (Levels for LVDS Compatibility) Figure 36. Differential Output: 75Ω Terminated VPLUSD = 2.4V 1.6V Out 75Ω 75Ω 75Ω Differential output: +0.41V = 0.825V 75Ω + - 75Ω impedance 10 nF 1.4V/0.99V Common mode level: -1.2V (-1.2V below VPLUSD level) 75Ω OutB 0.99V/1.4V Out 1.38V/1.05V 11 mA DVEE Figure 37. Differential Output: 50Ω Terminated VPLUSD = 2.4V 1.6V 75Ω 75Ω 50Ω Differential output: +0.33V = 0.660V 50Ω + - 50Ω impedance 10 nF Common mode level: -1.2V (-1.2V below VPLUSD level) 50Ω OutB 1.05V/1.38V Out 1.6V/0.8V 11 mA DVEE Figure 38. Differential Output: Open Loaded VPLUSD = 2.4V 1.6V 75Ω 75Ω 75Ω + - 75Ω impedance Differential output: +0.8V = 1.6V Common mode level: -1.2V (-1.2V below VPLUSD level) OutB 0.8V/1.6V 11 mA DVEE 30 TS8308500 2193A–BDC–04/03 TS8308500 Out of Range Bit An Out of Range (OR, ORB) bit that goes to logical high state when the input exceeds the positive full scale or falls below the negative full scale is available. When the analog input exceeds the positive full-scale, the digital output datas remain at a high logical state, with (OR, ORB) at logical one. When the analog input falls below the negative full-scale, the digital outputs remain at a logical low state, with (OR, ORB) at logical one again. Gray or Binary Output Data Format Select The TS8308500 internal regeneration latches indecisions (for inputs very close to a latch threshold) that can produce errors in the logic encoding circuitry and lead to large amplitude output errors. This is due to the fact that the latches are regenerating the internal analog residues into logical states with a finite voltage gain value (Av) within a given positive amount of time (t): Av = exp(∆(t)/τ), where τ is the positive feedback regeneration time constant. The TS8308500 has been designed to reduce the probability of occurrence of such errors to approximately 10-13 (targeted for the TS8308500 at 500 Msps). A standard technique for reducing the amplitude of such errors down to ±1 LSB consists in outputing the digital data in Gray code format. Though the TS8308500 has been designed to feature a bit error rate of 10-13 with a binary output format, it is possible for the user to select between the Binary or Gray output data format, in order to reduce the amplitude of such errors when they occur, by storing Gray output codes. Digital Data format selection: Diode Pin K1 • BINARY output format if GORB is floating or VCC. • GRAY output format if GORB is connected to ground (0V). A single pin is used for both the DRRB input command and die junction monitoring. The pin denomination is DRRB/DIOD. Temperature monitoring and Data Ready control by DRRB is not possible simultaneously. (See “Principle of Data Ready Signal Control by DRRB Input Command” on page 23 for Data Ready Reset input command). The operating die junction temperature must be kept below 145°C, therefore an adequate cooling system has to be set up. The diode mounted transistor measured Vbe value versus junction temperature is given below. 31 2193A–BDC–04/03 Figure 39. Diode Pin K1 1000 960 920 VBE (mV) 880 840 800 760 720 680 640 600 -55 ADC Gain Control Pin K6 -35 -15 5 25 45 65 Junction temperature (°C) 85 105 125 The ADC gain is adjustable by means of the pin K6 (input impedance is 1 MΩ in parallel with 2 pF). The gain adjust transfer function is given below: Figure 40. ADC Gain Control Pin K6 1.20 1.15 ADC Gain 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -500 -400 -300 -200 -100 0 100 200 300 400 500 Vgain (command voltage) (mV) 32 TS8308500 2193A–BDC–04/03 TS8308500 Equivalent Input/Output Schematics Figure 41. Equivalent Analog Input Circuit and ESD Protections VCC = +5V VCC VCLAMP = +2.4V -0.8V -0.8V GND GND = 0V -5.8V -5.8V +1.65V 50Ω 50Ω E21V E21V VEE VEE 200Ω 200Ω VIN VINB Pad capacitance 340 fF Pad capacitance 340 fF 5.8V 5.8V -1.55V 0.8V 0.8V E21G Note: E21G VEE = -5V The ESD protection equivalent capacitance is 150 fF. Figure 42. Equivalent Analog Clock Input Circuit and ESD Protections VCC VCC = +5V +0.8V -5.8V -0.8V -5.8V -5.8V GND = 0V -5.8V -5.8V VEE E31V E31V 150Ω VEE 150Ω CLK CLKB Pad capacitance 340 fF 5.8V Pad capacitance 340 fF 5.8V 380 µA 0.8V 0.8V E21G Note: VEE = -5V E21G The ESD protection equivalent capacitance is 150 fF. 33 2193A–BDC–04/03 Figure 43. Equivalent Data Output Buffer Circuit and ESD Protections VPLUSD = 0V to 2.4V -5.8V VEE -5.8V E01V E01V VEE OUT OUTB 5.8V 5.8V Pad capacitance 180 fF Pad capacitance 180 fF 0.8V 0.8V 0.8V 0.8V DVEE = -5V VEE = -5V VEE = -5V Note: The ESD protection equivalent capacitance is 150 fF. Figure 44. ADC Gain Adjust Equivalent Input Circuits and ESD Protections VCC = +5V GND -0.8V +0.8V NP1032C2 -5.8V E22V 1 kΩ GA Pad capacitance 180 fF 0.8V 2 pF 0.8V GND 5.8V VEE Note: 34 E22GA 500 µA 500 µA VEE = -5V The ESD protection equivalent capacitance is 150 fF. TS8308500 2193A–BDC–04/03 TS8308500 Figure 45. GORB Equivalent Input Schematic and ESD Protections GORB: gray or binary select input; floating or tied to VCC -> binary VCC = +5V -0.8V 1 kΩ 1 kΩ -0.8V 1 kΩ -5.8V VEE E21VA 5 kΩ GORB Pad capacitance 180 fF 5.8V 5.8V 250 µA 250 µA 5.8V E31G VEE = -5V Note: GND = 0V The ESD protection equivalent capacitance is 150 fF. Figure 46. DRRB Equivalent Input Schematic and ESD Protections Actual protection range: 6.6V above VEE, in fact stress above GND are clipped by the CB diode used for Tj monitoring VCC = +5V GND = 0V NP1032C2 10 kΩ 200Ω DRRB -1.3V Pad capacitance 180 fF -2.6V 5.8V 0.8V VEE Note: E21G VEE = -5V The ESD protection equivalent capacitance is 150 fF. 35 2193A–BDC–04/03 TSEV8308500: Device Evaluation Board For complete specification, see the separate “TSEV8308500” document. General Description The TSEV8308500 Evaluation Board (EB) is a board which has been designed in order to facilitate the evaluation and the characterization of the TS8308500 device up to its 1.3 GHz full power bandwidth at up to 500 Msps in the commercial temperature range. The high speed of the TS8308500 requires careful attention to circuit design and layout to achieve optimal performance. This four metal layer board with internal ground plane has the adequate functions in order to allow a quick and simple evaluation of the TS8308500 ADC performances over the temperature range. The TSEV8308500 Evaluation Board is very straightforward as it only implements the TS8308500 ADC, SMA connectors for input/output accesses and a 2.54 mm pitch connector compatible with HP16500C high frequency probes. The board also implements a de-embedding fixture in order to facilitate the evaluation of the high frequency insertion loss of the input microstrip lines, and a die junction temperature measurement setting. The board is constituted by a sandwich of two dielectric layers, featuring low insertion loss and enhanced thermal characteristics for operation in the high frequency domain and extended temperature range. The board dimensions are 130 mm x 130 mm. The board set comes fully assembled and tested, with the TS8308500 and its heatsink installed. 36 TS8308500 2193A–BDC–04/03 TS8308500 Package Description Table 7. TS8308500 Pad Description Pad number Chip Pad Name Chip Pad Function 1 VPLUSD 2 D5 3 D5B 4 D4 5 D4B Inverted phase (-) digital output, bit 4 6 DVEE -5V digital supply (double pad) 7 DR 8 DRB Inverted phase (-) Data Ready 9 D3 In-phase (+) digital output, bit 3 10 D3B Inverted phase (-) digital output, bit 3 11 VPLUSD Positive digital supply (double pad)(2) 12 D2 13 D2B 14 D1 15 D1B 16 D0 17 D0B 18 GORG 19 VCC +5V supply (double pad) 20 GND Analog ground (double pad) 21 VCC +5V supply (double pad) 22 VEE -5V analog supply (double pad) 23 VCC +5V supply (double pad) 24 GND Analog ground (double pad) 25 CLK In-phase (+) clock input (double pad) 26 GND Analog ground 27 CLKB Inverted phase (-) clock input (double pad) 28 GND Analog ground (double pad) 29 VEE -5V analog supply (double pad) 30 VCC +5V supply (double pad) 31 VEE -5V analog supply (double pad) 32 DIOD/DRRB 33 GND Positive digital supply (double pad)(2) In-phase (+) digital output, bit 5 (D7 is the MSB; Bit 7, D0 is the LSB; Bit 0) Inverted phase (-) digital output, bit 5 In-phase (+) digital output, bit 4 In-phase (+) Data Ready In-phase (+) digital output, bit 2 Inverted phase (-) digital output, bit 2 In-phase (+) digital output, bit 1 Inverted phase (-) digital output, bit 1 In-phase (+) digital output, bit 0, Least Significant Bit Inverted phase (-) digital output, bit 0, Least Significant Bit Gray or Binary data output format select(1) Diode input for Tj monitoring/Input for asynchronous Data Ready Reset Analog ground 37 2193A–BDC–04/03 Table 7. TS8308500 Pad Description (Continued) Pad number Chip Pad Name 34 VIN 35 GND Analog ground 36 VINB Inverted phase (-) analog input (double pad) 37 GND Analog ground (double pad) 38 GAIN ADC gain adjust input 39 VCC +5V supply (double pad) 40 VCC +5V supply 41 OR In-phase (+) Out of Range digital output 42 ORB 43 D7 44 D7B 45 D6 46 D6B Notes: 38 Chip Pad Function In-phase (+) analog input (double pad) Inverted phase (-) Out of Range digital output In-phase (+) digital output, bit 7, Most Significant Bit Inverted phase (-) digital output bit 7 In-phase (+) digital output, bit 6 Inverted phase (-) digital output, bit 6 1. GORB tied to VCC or floating: Binary output data format. GORB tied to GND: Gray output data format. 2. The common mode level of the output buffers is 1.2V below the positive digital supply. For ECL compatibility the positive digital supply must be set at 0V (ground). For LVDS compatibility (output common mode at +1.2V) the positive digital supply must be set at 2.4V.If the subsequent LVDS circuitry can withstand a lower level for input common mode, it is remmended to lower the positive digital supply level in the name proportion in order to spare power dissipation. TS8308500 2193A–BDC–04/03 TS8308500 TS8308500 Pin Description (CBGA68 package) Table 8. TS8308500 Pin Description Symbol Pin number Function GND A2, A5, B1, B5, B10, C2, D2, E1, E2, E11, F1, F2, G11, K2, K3, K4, K5, K10, L2, L5 Ground pins, to be connected to external ground plane VCC A4, A6, B2, B4, B6, H1, H2, L6, L7 +5V positive supply VEE A3, B3, G1, G2, J1, J2 5V analog negative supply DVEE F10, F11 -5V digital negative supply L3 In-phase (+) analog input signal of the Sample and Hold differential preamplifier L4 Inverted phase (-) of ECL clock input signal (CLK) C1 In-phase (+) ECL clock input signal. The analog input is sampled and held on the rising edge of the CLK signal CLKB D1 Inverted phase (-) of ECL clock input signal (CLK) B0, B1, B2, B3, B4, B5, B6, B7 A8, A9, A10, D10, H11, J11, K9, K8 B0B, B1B, B2B, B3B, B4B, B5B, B6B, B7B B7, B8, B9, C11, G10, H10, L10, L9 Inverted phase (-) Digital outputs. B0B is the inverted LSB B7B is the inverted MSB K7 In-phase (+) Out of Range bit. Out of Range is high on the leading edge of code 0 and code 256 ORB L8 Inverted phase (+) of Out of Range bit (OR) DR E10 In-phase (+) output of Data Ready signal DRB D11 Inverted phase (-) output of Data Ready signal (DR) A7 Gray or Binary select output format control pin – Binary output format if GORB is floating or VCC – Gray output format if GORB is connected at ground (0V) K6 ADC gain adjust pin. The gain pin is grounded by default, the ADC gain transfer fuction is nominally close to one K1 Die function temperature measurement pin and asynchronous data ready reset active low, single ended ECL input VPLUSD B11, C10, J10, K11 + 2.4V for LVDS output levels otherwise to GND(1) NC A1, A11, L1, L11 Not connected VIN VINB CLK OR GORB GAIN DIOD/DRRB Note: In-phase (+) digital outputs. B0 is the LSB, B7 is the MSB 1. The common mode level of the output buffers is 1.2V below the positive digital supply For ECL compatibility the positive digital supply must be set at 0V (ground ) For LVDS compatibility (output common mode at +1.2V) the positive digital supply must be set at 2.4V If the subsequent LVDS circuitry can withstand a lower level for the input common mode, it is recommended to lower the positive digital supply level in the same proportion in order to spare power dissipation 39 2193A–BDC–04/03 TS8308500GL Pinout of CBGA68 Package Figure 47. TS8308500 Pinout of CBGA68 Package 11 NC VPLUSD B3b DRb GND DVEE GND B4 B5 VPLUSD NC 10 B2 GND VPLUSD B3 DR DVEE B4b B5b VPLUSD GND B6b 9 B1 B2b B6 B7b 8 B0 B1b B7 ORb 7 Gorb B0b OR VCC 6 VCC VCC GAIN VCC 5 GND GND GND GND 4 VCC VCC GND VINB 3 VEE VEE GND VIN 2 GND VCC GND GND GND GND VEE VCC VEE GND GND 1 NC GND CLK CLKB GND GND VEE VCC VEE Diode NC A B C D E F G H K L Ball A1 Index other side J BOTTOM VIEW 40 TS8308500 2193A–BDC–04/03 TS8308500 TS8308500 Capacitors and Resistors Implant Figure 48. TS8308500 Capacitors and Resistors Implant GND 0.9 mm 100 pF DVEE ∅ 7.0 mm CLKB CLK 100 pF 100 pF 100 pF 50Ω 50Ω GND GND GND GND GND GORB GND GND 100 pF 100 pF 100 pF GND VEE GND VCC 100 pF VCC VEE VEE VCC 0.9 mm 100 pF GND VCC GND VINB VIN GAIN 100 pF 50Ω 50Ω 100 pF GND GND GND VCC 0.9 mm 0.9 mm Only on-package marking electrically isolated Note: R and C discrete components are 0603 size (1.6 x 0.8mm) 41 2193A–BDC–04/03 Outline Dimensions Figure 49. Outline Dimensions - 68 Pins CBGA Top side with soldered R, C devices (using solder Sn/Pb 63/37) View balls side 1.27 0.20 T CBGA 68 package. AL203 substrate. Package design. Corner balls (x4) are not connected (mechanical ball). Balls : 1.27 mm pitch on 11x11 grid. -T0.95 max Balls side 100 pF 11 10 Balls Sn/Pb 63/37 AI203 substrate 9 8 5 0.15 7.84 7 6 AI203 Ceramic Cap. Glued and embedded in substrate 15.00 ± 0.15 mm 7.84 4 3 50 Ω 2 Ball A1 Index other side 1.00 1 A B C D E F G H J K L -B- D 1.45 ± 0.12 15.00 ± 0.15 mm -A- 1.27 ref 68 x ∅ D = 0.80 ± 0.10 mm 0.40 T A B (Position of array of balls/edges A and B) 0.15 T (Position of balls within array) Detail of ball x2 0.63 ± 0.10 All units in mm 42 TS8308500 2193A–BDC–04/03 TS8308500 Figure 50. Cross Section 0.20 T Cross Section -TTop side with soldered R, C devices (using solder Sn/Pb 63/37) 0.95 max Balls side 100 pF Balls Sn/Pb 63/37 AI203 substrate AI203 Ceramic Cap. Glued on substrate 50 Ω 0.15 (0.400) (0.20) (2 x 0.20) (0.25) (0.20) 1.45 ± 0.12 All units in mm 43 2193A–BDC–04/03 Thermal And Moisture Characteristics Thermal Resistance from Junction to Ambient: RTHJA The following table lists the convection thermal performances parameters of the device itself, with no external heatsink added. Table 9. Thermal Resistance Thermal Resistance from Junction to Case: RTHJC Estimated ja Thermal Resistance (°C/W) 0 45 0.5 35.8 1 30.8 1.5 27.4 2 24.9 2.5 23 3 21.5 4 19.3 5 17.7 50 Rthja (deg.C/W) Air Flow (m/s) 40 30 20 10 0 0 1 2 3 Air Flow (m/s) 4 5 The typical value for Rthjc is given as 6.7°C/W (8°C/W max). This value does not include thermal contact resistance between package and external component (heatsink or PC Board). As an example, 2.0°C/W can be taken for 50 µm of thermal grease. CBGA68 Board Assembly with External Heatsink It is recommended that an external heatsink or specifically designed PCB be used. Cooling system efficiency can be monitored using the Temperature Sensing Diode, integrated in the device. Figure 51. CBGA68 Board Assembly 50.5 24.2 20.2 32.5 6.8 31 Note: 44 Board Units = mm TS8308500 2193A–BDC–04/03 TS8308500 Moisture Characteristics This device is sensitive to moisture (MSL3 according to JEDEC standard): Shelf life in sealed bag: 12 months at <40°C and <90% relative humidity (RH). After this bag is opened, devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temperature 220°C) must be: • mounted within 198 hours at factory conditions of ≤30°C/60% RH, or • stored at ≤20% RH Devices require baking, before mounting, if Humidity Indicator Card is >20% when read at 23°C ±5°C. If baking is required, devices may be baked for: • 192 hours at 40°C +5°C/-0°C and <5% RH for low-temperature device containers, or • 24 hours at 125°C ±5°C for high temperature device containers 45 2193A–BDC–04/03 Definitions Definition of Terms (BER) Bit Error Rate Probability to exceed a specified error threshold for a sample. An error code is a code that differs by more than ±4 LSB from the correct code. (BW) Full-Power Input Bandwidth Analog input frequency at which the fundamental component in the digitally reconstructed output has fallen by 3 dB with respect to its low frequency value (determined by FFT analysis) for input at full-scale. (DG) Differential Gain The peak gain variation (in percent) at five different DC levels for an AC signal of 20% FullScale peak to peak amplitude. FIN = 5 MHz (TBC). (DNL) Differential NonLinearity The Differential Non-Linearity for an output code (i) is the difference between the measured step size of code (i) and the ideal LSB step size. DNL (i) is expressed in LSBs. DNL is the maximum value of all DNL (i). DNL error specification of less than 1 LSB guarantees that there are no missing output codes and that the transfer function is monotonic. (DP) Differential Phase Peak Phase variation (in degrees) at five different DC levels for an AC signal of 20% FullScale peak to peak amplitude. FIN = 5 MHz (TBC). (ENOB) Effective Number of Bits ENOB = SINAD - 1.76 + 20 log (A/V/2) 6.02 Where A is the actual input amplitude and V is the full-scale range of the ADC under test. (IMD) InterModulation Distortion The two tones intermodulation distortion (IMD) rejection is the ratio of either input tone to the worst third order intermodulation products. The input tones levels are at -7 dB full-scale. (INL) Integral NonLinearity The Integral Non-Linearity for an output code (i) is the difference between the measured input voltage at which the transition occurs and the ideal value of this transition. INL (i) is expressed in LSBs, and is the maximum value of all |INL (i)|. (JITTER) Aperture Uncertainty Sample to sample variation in aperture delay. The voltage error due to jitter depends on the slew rate of the signal at the sampling point. (NPR) Noise Power Ratio The NPR is measured to characterize the ADC performance in response to broad bandwidth signals. When using a notch-filtered broadband white-noise generator as the input to the ADC under test, the Noise Power Ratio is defined as the ratio of the average out-of-notch to the average in-notch power spectral density magnitudes for the FFT spectrum of the ADC output sample test. (NRZ) Non-Return to Zero When the input signal is larger than the upper bound of the ADC input range, the output code is identical to the maximum code and the Out of Range bit is set to logic one. When the input signal is smaller than the lower bound of the ADC input range, the output code is identical to the minimum code, and the Out of Range bit is set to logic one. (It is assumed that the input signal amplitude remains within the absolute maximum ratings). (ORT) Overvoltage Recovery Time Time to recover 0.2% accuracy at the output, after a 150% full-scale step applied on the input is reduced to midscale. 46 TS8308500 2193A–BDC–04/03 TS8308500 (PSRR) Power Supply Rejection Ratio Ratio of input offset variation to a change in power supply voltage. (SFDR) Spurious Free Dynamic Range Ratio expressed in dB of the RMS signal amplitude, set at 1 dB below full-scale, to the RMS value of the next highest spectral component (peak spurious spectral component). SFDR is the key parameter for selecting a converter to be used in a frequency domain application (Radar systems, digital receiver, network analyzer, etc.). It may be reported in dBc (i.e.: degrades as signal level is lowered), or in dBFS (i.e.: always related back to converter full scale) (SINAD) Signal to Noise and Distortion Ratio Ratio expressed in dB of the RMS signal amplitude, set to 1 dB below full-scale, to the RMS sum of all other spectral components, including the harmonics except DC. (SNR) Signal to Noise Ratio Ratio expressed in dB of the RMS signal amplitude, set to 1 dB below full-scale, to the RMS sum of all other spectral components excluding the five first harmonics. (TA) Aperture Delay Delay between the rising edge of the differential clock inputs (CLK, CLKB) (zero crossing point), and the time at which (VIN, VINB) is sampled. (TC) Encoding Clock Period TC1 = Minimum clock pulse width (high) TC = TC1 + TC2 (TD1) Time Delay from Data to Data Ready Time delay from Data transition to Data Ready. (TD2) Time Delay from Data Ready to Data General expression is TD1 = TC1 + TDR - TOD with TC = TC1 + TC2 = 1 encoding clock period. (TF) Fall Time Time delay for the output Data signals to fall from 80% to 20% of delta between low level and high level. (THD) Total Harmonic Distorsion Ratio expressed in dBc of the RMS sum of the first five harmonic components, to the RMS value of the measured fundamental spectral component. (TOD) Digital Data Output Delay Delay from the falling edge of the differential clock inputs (CLK, CLKB) (zero crossing point) to the next point of change in the differential output data (zero crossing) with a specified load. (TPD) Pipeline Delay Number of clock cycles between the sampling edge of an input data and the associated output data being made available, (not taking in account the TOD). For the TS8388BF the TPD is 4 clock periods. (TR) Rise Time Time delay for the output Data signals to rise from 20% to 80% of delta between low level and high level. (TRDR) Data Ready Reset Delay Delay between the falling edge of the Data Ready output asynchronous Reset signal (DDRB) and the reset to digital zero transition of the Data Ready output signal (DR). (TS) Settling Time Time delay to achieve 0.2% accuracy at the converter output when a 80% full-scale step function is applied to the differential analog input. TC2 = Minimum clock pulse width (low) 47 2193A–BDC–04/03 Ordering Information Part Number Package Temperature Range Screening Comments TSX8308500GL CBGA 68 Ambient Prototype Prototype version TS8308500CGL CBGA 68 "C" grade 0°C < Tc ; Tj < 90°C Standard TS8308500VGL CBGA 68 "V" grade -40°C < Tc ; Tj < 110°C Standard TSEV8308500GL CBGA 68 Ambient Prototype Evaluation Board (delivered with a heat sink) CBGA 68 Ambient Prototype Evaluation Board with digital output buffers (delivered with a heat sink) TSEV8308500GLZA2 48 TS8308500 2193A–BDC–04/03 TS8308500 Datasheet Status Description Table 10. Datasheet Status Datasheet Status Validity This datasheet contains target and goal specifications for discussion with customer and application validation. Before design phase Objective specification This datasheet contains target or goal specifications for product development. Valid during the design phase Target specification Preliminary specification α-site This datasheet contains preliminary data. Additional data may be published later could include simulation results. Valid before characterization phase Preliminary specification β-site This datasheet also contains characterization results. Valid before the industrialization phase Product specification This datasheet contains final product specification Valid for production purposes Limiting Values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application Information Where application information is given, it is advisory and does not form part of the specification. Life Support Applications These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Atmel customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Atmel for any damages resulting from such improper use or sale. 49 2193A–BDC–04/03 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131 Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131 Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131 Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 1150 East Cheyenne Mtn. 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