DISCRETE SEMICONDUCTORS DATA SHEET BF410A to D N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 December 1990 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. BF410A to D PINNING - TO-92 VARIANT 1 = drain 2 = source 3 = gate These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks to these special features the BF410 is very suitable for applications such as the RF stages in FM portables (type A), car radios (type B) and mains radios (type C) or the mixer stage (type D). 1 handbook, halfpage 2 3 d g s MAM257 Fig.1 Simplified outline and symbol QUICK REFERENCE DATA Drain-source voltage VDS max. 20 V Drain current (DC or average) ID max. 30 mA Ptot max. Total power dissipation up to Tamb = 75 °C 300 BF410A B mW C D Drain current VDS = 10 V; VGS = 0 min. 0.7 2.5 6 10 mA max. 3.0 7.0 12 18 mA yfs min. 2.5 4 6 7 mS VDS = 10 V; VGS = 0 Crs typ. 0.5 0.5 − − pF VDS = 10 V; ID = 5 mA Crs typ. − − 0.5 0.5 pF VDS = 10 V; VGS = 0 F typ. 1.5 1.5 − − dB VDS = 10 V; ID = 5 mA F typ. − − 1.5 1.5 dB IDSS Transfer admittance VDS = 10 V; VGS = 0; f = 1 kHz Feedback capacitance Noise figure at optimum source admittance GS = 1 mS; −BS = 3 mS; f = 100 MHz December 1990 2 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF410A to D RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage VDS max. 20 V Drain-gate voltage (open source) VDGO max. 20 V Drain current (DC or average) ID max. 30 mA Gate current ± IG max. 10 mA Total power dissipation up to Tamb = 75 °C Ptot max. 300 mW −65 to +150 °C Storage temperature range Tstg Junction temperature Tj max. 150 °C Rth j-a = 250 K/W THERMAL RESISTANCE From junction to ambient in free air STATIC CHARACTERISTICS Tamb = 25 °C Gate cut-off current −VGS = 0.2 V; VDS = 0 BF410A B C D −IGSS max. 10 10 10 10 nA −V(BR)GDO min. 20 20 20 20 V min. 0.7 2.5 6 10 mA max. 3.0 7.0 12 18 mA typ. 0.8 1.5 2.2 3 V Gate-drain breakdown voltage IS = 0; −ID = 10 µA Drain current VDS = 10 V; VGS = 0 IDSS Gate-source cut-off voltage ID = 10 µA; VDS = 10 V December 1990 −V(P)GS 3 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF410A to D DYNAMIC CHARACTERISTICS Measuring conditions (common source): VDS = 10 V; VGS = 0; Tamb = 25 °C for BF410A and B VDS = 10 V; ID = 5 mA; Tamb = 25 °C for BF410C and D y-parameters (common source) BF410A Input capacitance at f = 1 MHz Cis max. Input conductance at f = 100 MHz gis typ. Feedback capacitance at f = 1 MHz Crs Transfer admittance at f = 1 kHz yfs B C D 5 5 5 5 pF 100 90 60 50 µS typ. 0.5 0.5 0.5 0.5 pF max. 0.7 0.7 0.7 0.7 pF min. 2.5 4.0 4.0 3.5 mS yfs min. − − 6.0 7.0 mS Transfer admittance at f = 100 MHz yfs typ. 3.5 5.5 5.0 5.0 mS Output capacitance at f = 1 MHz Cos max. 3 3 3 3 pF Output conductance at f = 1 MHz gos max. 60 80 100 120 µS Output conductance at f = 100 MHz gos typ. 35 55 70 90 µS F typ. 1.5 1.5 1.5 1.5 dB VGS = 0 instead of ID = 5 mA Noise figure at optimum source admittance GS = 1 mS; −BS = 3 mS; f = 100 MHz MDA277 1.5 MDA278 10 |yfs| handbook, halfpage handbook, halfpage Crs BF410D (mA/V) 8 (pF) BF410B BF410C 1 6 BF410A 4 0.5 typ 2 0 0 Fig.2 4 8 12 16 0 20 VDS (V) 0 VGS = 0 for BF410A and BF410B; ID = 5 mA for BF410C and BF410D; f = 1 MHz; Tamb = 25 °C. December 1990 5 10 ID (mA) 15 Fig.3 VDS 10 V; f = 1 kHz; Tamb = 25 °C; typical values. 4 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF410A to D PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 variant c L2 E d A L b 1 e1 2 e D 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) max L2 max mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 2.5 Notes 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 variant December 1990 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 5 EUROPEAN PROJECTION ISSUE DATE 97-04-14 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF410A to D DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1990 6