QTP# 133504:USB PRODUCT FAMILY CY7C63743CK4 P26T TECHNOLOGY, FAB4

Document No.001-90331 Rev. *B
ECN # 4587880
Cypress Semiconductor
Product Qualification Report
QTP# 133504 VERSION*B
December 2014
USB5 Product Family
P26T Technology, CMI - Minnesota
CY7C63722C
CY7C63723C
CY7C63743C
Low-Speed USB and PS/2
Peripheral Controller
FOR ANY QUESTIONS ON THIS REPORT, PLEAE CONTACT
[email protected] or via a CYLINK CRM CASE
Prepared By:
Honesto Sintos
Reliability Engineer
Reviewed By:
Rene Rodgers
Reliability Manager
Approved By:
Richard Oshiro
Reliability Director
Company Confidential
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Page 1 of 9
Document No.001-90331 Rev. *B
ECN #4587880
PRODUCT QUALIFICATION HISTORY
Qual
Report
133504
Description of Qualification Purpose
Qualification of PROM2.6 (P26T) USB5 Transfer from MagnaChip to CMI.
Company Confidential
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Page 2 of 9
Date
Comp
Dec 13
Document No.001-90331 Rev. *B
ECN #4587880
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: Qualification of P26T USB5 Transfer from MagnaChip to CMI.
Marketing Part #:
CY7C63722C , CY7C63723C, CY7C63743C
Device Description
Low-Speed USB and PS/2 Peripheral Controller
Cypress Division:
Cypress Semiconductor – Data Communications Division (DCD)
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number of Metal Layers
3 Metal Composition:
Metal 1, 2: 500A TiW / 8000A Al-0.5%Cu / 300A TiW
Metal 3: 300A Ti / 13000A Al-0.5%Cu / 300A TiW
Passivation Type and Materials:
7000A TEOS Oxide / 15000A Oxynitride
Generic Process Technology /Design Rule (-drawn):
P26T / 0.65um
Gate Oxide Material/Thickness (MOS):in
SiO2 165A / 225A
Name/Location of Die Fab (prime) Facility:
CMI or FAB4 / Bloomington, MN, USA
Die Fab Line ID/Wafer Process ID:
P26T
PACKAGE AVAILABILITY
.
ASSEMBLY FACILITY SITE
PACKAGE
24-lead SOIC
18-lead SOIC
18-lead PDIP
CML-RA
24-lead PDIP
MMT
24-lead QSOP
JCET
Die Sales
N/A
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Page 3 of 9
Document No.001-90331 Rev. *B
ECN #4587880
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation
SZ243
Package Outline, Type, or Name:
24-Lead Small Outline Integrated Circuit (SOIC)
Mold Compound Name/Manufacturer:
KEG3000DA-CY, Kyocera
Mold Compound Flammability Rating:
UL94, V-0 @ 0.8 mm
Oxygen Rating Index:
Not Indicated
Lead Frame Material:
C 194 (1/2H)
Lead Finish, Composition / Thickness:
NiPdAu
Die Backside Preparation Method/Metallization: Backgrinding
Die Separation Method:
100% Saw Thru
Die Attach Supplier:
Henkel Technologies
Die Attach Material:
QMI 509
Die Attach Method:
Pick & Place, Snap Cure
Bond Diagram Designation:
001-69359
Wire Bond Method:
Thermosonic
Wire Material/Size:
Au, 0.9 mil
Thermal Resistance Theta JA °C/W:
59 deg C/W
Package Cross Section Yes/No:
No
Assembly Process Flow:
001-49354M
Name/Location of Assembly (prime) facility
CML_RA
MSL Level
3
Reflow Profile
260C
Note: Please contact a Cypress Representative for other packages availability.
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location
Cypress Philippines (CML-R / CML-RA)
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Page 4 of 9
Document No.001-90331 Rev. *B
ECN #4587880
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT
Stress/Test
High Temperature Operating Life
Test Condition
(Temp/Bias)
Dynamic Operating Condition, Vcc Max=5.5V, 150°C
P
Early Failure Rate
High Temperature Operating Life
Dynamic Operating Condition, Vcc Max=5.5V, 150°C
P
Latent Failure Rate
Low Temperature Operating Life
Result
P/F
P
High Accelerated Saturation Test
-30°C, 5.5V
130°C, 5.5V, 85%RH
(HAST)
Precondition: JESD22 Moisture Sensitivity MSL 3
P
192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C
Temperature Cycle
Pressure Cooker
MIL-STD-883C, Method 1010, Condition C, -65C to 150C
Precondition: JESD22 Moisture Sensitivity MSL 3
192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C
121C, 100%RH, 15 Psig
Precondition: JESD22 Moisture Sensitivity MSL 3
192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C
P
P
Acoustic Microscopy
J-STD-020
Age Bond Strength
200C, 4hrs
MIL-STD-883, Method 883-2011
P
Data Retention
150°C ± 5°C No Bias
P
Pre/Post LFR AC/DC Char
AC/DC Critical Parameter Char at LFR 80hrs, 500hrs & 1000hrs
2,200V
P
Electrostatic Discharge
P
Human Body Model (ESD-HBM)
JEDEC EIA/JESD22-A114-B
P
Electrostatic Discharge
500V
JESD22-C101
P
Charge Device Model (ESD-CDM)
Electrostatic Discharge
200V, JESD22-A115-A
P
Machine Model (ESD-MM)
Static Latch-up
125C, ± 140mA
JESD78B
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Page 5 of 9
P
Document No.001-90331 Rev. *B
ECN #4587880
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
Device Tested/
Device Hours
High Temperature Operating Life
3
Early Failure Rate
1
2
3
Activation
Energy
Thermal3
A.F
Failure
Rate
0
N/A
N/A
0 PPM
0
0 .7
55
40 FIT
3,580 Devices
1,2
High Temperature Operating Life
Long Term Failure Rate
# Fails
134,560 DHRs
Assuming an ambient temperature of 55C and a junction temperature rise of 15C.
Chi-squared 60% estimations used to calculate the failure rate.
Thermal Acceleration Factor is calculated from the Arrhenius equation
E  1 1  
AF = exp  A  -  
 k  T 2 T1  
Where:
EA =The Activation Energy of the defect mechanism.
k = Boltzmann's constant = 8.62x10-5 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction
temperature of the device at use conditions.
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Page 6 of 9
Document No.001-90331 Rev. *B
ECN #4587880
Reliability Test Data
QTP #: 133504
Device
Assy Lot #
Assy Loc Duration
CY7C63743CK4 (7C637402BC) 4312386
611330084
CML-RA
COMP
15
0
CY7C63743CK4 (7C637402BC) 4304823
611312233
CML-RA
COMP
15
0
611330084
CML-RA
COMP
3
0
CY7C63743CK4 (7C637402BC) 4304823
611312233
CML-RA
500
85
0
CY7C63743CK4 (7C637402BC) 4304823
611312233
CML-RA
1000
85
0
CY7C63743CK4 (7C637402BC) 4312386
611330084
CML-RA
500
77
0
CY7C63743CK4 (7C637402BC) 4312386
611330084
CML-RA
1000
77
0
CY7C63743CK4 (7C637402BC) 4312386
611330084
CML-RA
1500
77
0
CY7C63743CK4 (7C637402BC) 4312386
611330084
CML-RA
500
9
0
CY7C63743CK4 (7C637402BC) 4328085
611339136
CML-RA
500
9
0
CY7C63743CK4 (7C637402BC) 4304823
611339134
CML-RA
500
9
0
CY7C63743CK4 (7C637402BC) 4312386
611330084
CML-RA
2200
8
0
CY7C63743CK4 (7C637402BC) 4328085
611339136
CML-RA
2200
8
0
CY7C63743CK4 (7C637402BC) 4304823
611339134
CML-RA
2200
8
0
611330084
CML-RA
200
5
0
STRESS:
STRESS:
Fab Lot #
Rej
Failure Mechanism
ACOUSTIC, MSL3
AGE BOND STRENGTH
CY7C63743CK4 (7C637402BC) 4312386
STRESS:
Samp
DATA RETENTION
STRESS: ESD-CHARGE DEVICE MODEL
STRESS:
ESD-HUMAN BODY CIRCUIT
STRESS: ESD-MM
CY7C63743CK4 (7C637402BC) 4312386
STRESS: HI-ACCEL SATURATION TEST 130C, 85%RH
CY7C63743CK4 (7C637402BC) 4312386
611330084
CML-RA
128
77
0
CY7C63743CK4 (7C637402BC) 4304823
611312233
CML-RA
128
85
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE
CY7C63743CK4 (7C637402BC) 4304823
611312233
CML-RA
48
1500
0
CY7C63743CK4 (7C637402BC) 4312386
611330084
CML-RA
48
540
0
CY7C63743CK4 (7C637402BC) 4312386
611330090
CML-RA
48
540
0
CY7C63743CK4 (7C637402BC) 4328085
611341726
CML-RA
48
1000
0
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Page 7 of 9
Document No.001-90331 Rev. *B
ECN #4587880
Reliability Test Data
QTP #: 133504
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE
CY7C63743CK4 (7C637402BC) 4312386
611330084
CML-RA
80
116
0
CY7C63743CK4 (7C637402BC) 4312386
611330084
CML-RA
500
116
0
CY7C63743CK4 (7C637402BC) 4304823
611312233
CML-RA
80
116
0
CY7C63743CK4 (7C637402BC) 4304823
611312233
CML-RA
500
116
0
STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE
CY7C63743CK4 (7C637402BC) 4312386
611330084
CML-RA
500
79
0
CY7C63743CK4 (7C637402BC) 4312386
611330084
CML-RA
168
77
0
CY7C63743CK4 (7C637402BC) 4312386
611330084
CML-RA
288
77
0
CY7C63743CK4 (7C637402BC) 4304823
611312233
CML-RA
168
85
0
CY7C63743CK4 (7C637402BC) 4304823
611312233
CML-RA
288
85
0
STRESS: PRESSURE COOKER TEST
STRESS: Pre / Post HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE CHAR
CY7C63743CK4 (7C637402BC) 4312386
611330084
CML-RA
COMP
10
0
CY7C63743CK4 (7C637402BC) 4304823
611312233
CML-RA
COMP
10
0
STRESS: STATIC LATCH-UP TESTING, 125C, XXV, +/-140mA
CY7C63743CK4 (7C637402BC) 4312386
611330084
CML-RA
COMP
10
0
CY7C63743CK4 (7C637402BC) 4312386
611330084
CML-RA
500
77
0
CY7C63743CK4 (7C637402BC) 4312386
611330084
CML-RA
1000
77
0
CY7C63743CK4 (7C637402BC) 4304823
611312233
CML-RA
500
84
0
CY7C63743CK4 (7C637402BC) 4304823
611312233
CML-RA
1000
83
0
STRESS: TC COND. C -65C TO 150C
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Page 8 of 9
Document No.001-90331 Rev. *B
ECN #4587880
Document History Page
Document Title: QTP# 133504: USB Product Family "CY7C63743CK4"P26T Technology, Fab4
Document Number: 001-90331
Rev. ECN
No.
**
4210971
*A
4294443
*B
Orig. of
Change
HSTO
HSTO
4587880 HSTO
Description of Change
Initial Spec Release.
Updated qualification report template in front page
Added 2 devices (CY7C63722C, CY7C63723C) MPN and updated
devices description in front page and in Product Description table in
page 3.
Update package availability options in page3
Align qualification report based on the new template in the front page
Distribution: WEB
Posting:
None
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Page 9 of 9