Document No.001-90331 Rev. *B ECN # 4587880 Cypress Semiconductor Product Qualification Report QTP# 133504 VERSION*B December 2014 USB5 Product Family P26T Technology, CMI - Minnesota CY7C63722C CY7C63723C CY7C63743C Low-Speed USB and PS/2 Peripheral Controller FOR ANY QUESTIONS ON THIS REPORT, PLEAE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Honesto Sintos Reliability Engineer Reviewed By: Rene Rodgers Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 9 Document No.001-90331 Rev. *B ECN #4587880 PRODUCT QUALIFICATION HISTORY Qual Report 133504 Description of Qualification Purpose Qualification of PROM2.6 (P26T) USB5 Transfer from MagnaChip to CMI. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 9 Date Comp Dec 13 Document No.001-90331 Rev. *B ECN #4587880 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualification of P26T USB5 Transfer from MagnaChip to CMI. Marketing Part #: CY7C63722C , CY7C63723C, CY7C63743C Device Description Low-Speed USB and PS/2 Peripheral Controller Cypress Division: Cypress Semiconductor – Data Communications Division (DCD) TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers 3 Metal Composition: Metal 1, 2: 500A TiW / 8000A Al-0.5%Cu / 300A TiW Metal 3: 300A Ti / 13000A Al-0.5%Cu / 300A TiW Passivation Type and Materials: 7000A TEOS Oxide / 15000A Oxynitride Generic Process Technology /Design Rule (-drawn): P26T / 0.65um Gate Oxide Material/Thickness (MOS):in SiO2 165A / 225A Name/Location of Die Fab (prime) Facility: CMI or FAB4 / Bloomington, MN, USA Die Fab Line ID/Wafer Process ID: P26T PACKAGE AVAILABILITY . ASSEMBLY FACILITY SITE PACKAGE 24-lead SOIC 18-lead SOIC 18-lead PDIP CML-RA 24-lead PDIP MMT 24-lead QSOP JCET Die Sales N/A Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 9 Document No.001-90331 Rev. *B ECN #4587880 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation SZ243 Package Outline, Type, or Name: 24-Lead Small Outline Integrated Circuit (SOIC) Mold Compound Name/Manufacturer: KEG3000DA-CY, Kyocera Mold Compound Flammability Rating: UL94, V-0 @ 0.8 mm Oxygen Rating Index: Not Indicated Lead Frame Material: C 194 (1/2H) Lead Finish, Composition / Thickness: NiPdAu Die Backside Preparation Method/Metallization: Backgrinding Die Separation Method: 100% Saw Thru Die Attach Supplier: Henkel Technologies Die Attach Material: QMI 509 Die Attach Method: Pick & Place, Snap Cure Bond Diagram Designation: 001-69359 Wire Bond Method: Thermosonic Wire Material/Size: Au, 0.9 mil Thermal Resistance Theta JA °C/W: 59 deg C/W Package Cross Section Yes/No: No Assembly Process Flow: 001-49354M Name/Location of Assembly (prime) facility CML_RA MSL Level 3 Reflow Profile 260C Note: Please contact a Cypress Representative for other packages availability. ELECTRICAL TEST / FINISH DESCRIPTION Test Location Cypress Philippines (CML-R / CML-RA) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 9 Document No.001-90331 Rev. *B ECN #4587880 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test High Temperature Operating Life Test Condition (Temp/Bias) Dynamic Operating Condition, Vcc Max=5.5V, 150°C P Early Failure Rate High Temperature Operating Life Dynamic Operating Condition, Vcc Max=5.5V, 150°C P Latent Failure Rate Low Temperature Operating Life Result P/F P High Accelerated Saturation Test -30°C, 5.5V 130°C, 5.5V, 85%RH (HAST) Precondition: JESD22 Moisture Sensitivity MSL 3 P 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C Temperature Cycle Pressure Cooker MIL-STD-883C, Method 1010, Condition C, -65C to 150C Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C 121C, 100%RH, 15 Psig Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C P P Acoustic Microscopy J-STD-020 Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Data Retention 150°C ± 5°C No Bias P Pre/Post LFR AC/DC Char AC/DC Critical Parameter Char at LFR 80hrs, 500hrs & 1000hrs 2,200V P Electrostatic Discharge P Human Body Model (ESD-HBM) JEDEC EIA/JESD22-A114-B P Electrostatic Discharge 500V JESD22-C101 P Charge Device Model (ESD-CDM) Electrostatic Discharge 200V, JESD22-A115-A P Machine Model (ESD-MM) Static Latch-up 125C, ± 140mA JESD78B Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 9 P Document No.001-90331 Rev. *B ECN #4587880 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours High Temperature Operating Life 3 Early Failure Rate 1 2 3 Activation Energy Thermal3 A.F Failure Rate 0 N/A N/A 0 PPM 0 0 .7 55 40 FIT 3,580 Devices 1,2 High Temperature Operating Life Long Term Failure Rate # Fails 134,560 DHRs Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 Where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 9 Document No.001-90331 Rev. *B ECN #4587880 Reliability Test Data QTP #: 133504 Device Assy Lot # Assy Loc Duration CY7C63743CK4 (7C637402BC) 4312386 611330084 CML-RA COMP 15 0 CY7C63743CK4 (7C637402BC) 4304823 611312233 CML-RA COMP 15 0 611330084 CML-RA COMP 3 0 CY7C63743CK4 (7C637402BC) 4304823 611312233 CML-RA 500 85 0 CY7C63743CK4 (7C637402BC) 4304823 611312233 CML-RA 1000 85 0 CY7C63743CK4 (7C637402BC) 4312386 611330084 CML-RA 500 77 0 CY7C63743CK4 (7C637402BC) 4312386 611330084 CML-RA 1000 77 0 CY7C63743CK4 (7C637402BC) 4312386 611330084 CML-RA 1500 77 0 CY7C63743CK4 (7C637402BC) 4312386 611330084 CML-RA 500 9 0 CY7C63743CK4 (7C637402BC) 4328085 611339136 CML-RA 500 9 0 CY7C63743CK4 (7C637402BC) 4304823 611339134 CML-RA 500 9 0 CY7C63743CK4 (7C637402BC) 4312386 611330084 CML-RA 2200 8 0 CY7C63743CK4 (7C637402BC) 4328085 611339136 CML-RA 2200 8 0 CY7C63743CK4 (7C637402BC) 4304823 611339134 CML-RA 2200 8 0 611330084 CML-RA 200 5 0 STRESS: STRESS: Fab Lot # Rej Failure Mechanism ACOUSTIC, MSL3 AGE BOND STRENGTH CY7C63743CK4 (7C637402BC) 4312386 STRESS: Samp DATA RETENTION STRESS: ESD-CHARGE DEVICE MODEL STRESS: ESD-HUMAN BODY CIRCUIT STRESS: ESD-MM CY7C63743CK4 (7C637402BC) 4312386 STRESS: HI-ACCEL SATURATION TEST 130C, 85%RH CY7C63743CK4 (7C637402BC) 4312386 611330084 CML-RA 128 77 0 CY7C63743CK4 (7C637402BC) 4304823 611312233 CML-RA 128 85 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE CY7C63743CK4 (7C637402BC) 4304823 611312233 CML-RA 48 1500 0 CY7C63743CK4 (7C637402BC) 4312386 611330084 CML-RA 48 540 0 CY7C63743CK4 (7C637402BC) 4312386 611330090 CML-RA 48 540 0 CY7C63743CK4 (7C637402BC) 4328085 611341726 CML-RA 48 1000 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 9 Document No.001-90331 Rev. *B ECN #4587880 Reliability Test Data QTP #: 133504 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE CY7C63743CK4 (7C637402BC) 4312386 611330084 CML-RA 80 116 0 CY7C63743CK4 (7C637402BC) 4312386 611330084 CML-RA 500 116 0 CY7C63743CK4 (7C637402BC) 4304823 611312233 CML-RA 80 116 0 CY7C63743CK4 (7C637402BC) 4304823 611312233 CML-RA 500 116 0 STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE CY7C63743CK4 (7C637402BC) 4312386 611330084 CML-RA 500 79 0 CY7C63743CK4 (7C637402BC) 4312386 611330084 CML-RA 168 77 0 CY7C63743CK4 (7C637402BC) 4312386 611330084 CML-RA 288 77 0 CY7C63743CK4 (7C637402BC) 4304823 611312233 CML-RA 168 85 0 CY7C63743CK4 (7C637402BC) 4304823 611312233 CML-RA 288 85 0 STRESS: PRESSURE COOKER TEST STRESS: Pre / Post HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE CHAR CY7C63743CK4 (7C637402BC) 4312386 611330084 CML-RA COMP 10 0 CY7C63743CK4 (7C637402BC) 4304823 611312233 CML-RA COMP 10 0 STRESS: STATIC LATCH-UP TESTING, 125C, XXV, +/-140mA CY7C63743CK4 (7C637402BC) 4312386 611330084 CML-RA COMP 10 0 CY7C63743CK4 (7C637402BC) 4312386 611330084 CML-RA 500 77 0 CY7C63743CK4 (7C637402BC) 4312386 611330084 CML-RA 1000 77 0 CY7C63743CK4 (7C637402BC) 4304823 611312233 CML-RA 500 84 0 CY7C63743CK4 (7C637402BC) 4304823 611312233 CML-RA 1000 83 0 STRESS: TC COND. C -65C TO 150C Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 9 Document No.001-90331 Rev. *B ECN #4587880 Document History Page Document Title: QTP# 133504: USB Product Family "CY7C63743CK4"P26T Technology, Fab4 Document Number: 001-90331 Rev. ECN No. ** 4210971 *A 4294443 *B Orig. of Change HSTO HSTO 4587880 HSTO Description of Change Initial Spec Release. Updated qualification report template in front page Added 2 devices (CY7C63722C, CY7C63723C) MPN and updated devices description in front page and in Product Description table in page 3. Update package availability options in page3 Align qualification report based on the new template in the front page Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 9