Document No.001-88018 Rev. *A ECN # 4417735 Cypress Semiconductor Product Qualification Report QTP# 004803 VERSION*A June, 2014 FAST ASYNCHRONOUS STATIC RAM R52D-3 TECHNOLOGY, FAB 4 CY7C1399B 32K x 8 STATIC RAM FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Josephine Pineda Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 10 Document No.001-88018 Rev. *A ECN # 4417735 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 99311 New Technology R52D-3 /New Product, 2Meg,CY7C1329 SRAM Aug 99 004803 New Product, Fast Asynchronous SRAM,CY7C1399B May 01 Cypress products are manufactured using qualified processes. The technology qualification for this product is referenced above and must be considered to get a complete and thorough evaluation of the reliability of the product. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 10 Document No.001-88018 Rev. *A ECN # 4417735 PRODUCT DESC IPTION (for qualification) Qualification Purpose: To qualify new Fast Asynchronous SRAM, CY7C1399B in Qualified R52D-3 Technology, Fab 4. Marketing Part #: CY7C1399B Device Description: 3.3V, Commercial and Industrial available in 28-lead SOJ and 28-lead TSOP Package. Cypress Division: Cypress Semiconductor Corporation – Memory Product Division (MPD) Overall Die (or Mask) REV Level (pre-requisite for qualification What ID markings on Die: Rev.H 7C1399D TECHNOLOGY/FAB PROCESS DESCRIPTION - R52D-3 Number of Metal Layers: 2 Metal 1: 500Å TiW/6000Å Al-.5%Cu/300Å TiW Metal Composition: Metal 2: 300Å CoTi/8000Å Al-.5%Cu/300Å TiW Passivation Type and Materials: 1KÅ Oxide + 9KÅ Nitride Die coating(s) N/A Generic Process Technology/Design Rule (µ-drawn): CMOS, Double Metal /0.25 μm/0.3 FETs Gate Oxide Material/Thickness (MOS): SiO2 / 55Å Name/Location of Die Fab (prime) Facility: Cypress Semiconductor - Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4/R52D-3 PACKAGE AVAILABILITY PACKAGE 28 lead TSOP ASSEMBLY SITE FACILITY CHINA-JT, TAIWAN-T Note: Package Qualification details upon request Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 10 Document No.001-88018 Rev. *A ECN # 4417735 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: V2839 28-lead Plastic Small Outline J-Bend (SOJ) Hitachi CEL9200IV77 Mold Compound Flammability Rating: V-O per UL 94 Oxygen Rating Index: >28% Lead Frame Material: Copper Lead Finish, Composition / Thickness: 90%Sn, 10%Pb, range thickness: 410um-437um Die Backside Preparation Method/Metallization: Backgrind Fine Finish/Silicon Die Separation Method: Wafer Saw Die Attach Supplier: Ablestik Die Attach Material: Ablestik 8361H Wire Bond Method: Ultrasonic Wire Material/Size: Au, 1.0um Thermal Resistance Theta JA °C/W: 59.2°C/W Package Cross Section Yes/No: Yes Name/Location of Assembly (prime) facility: Cypress Philippines (CSPI-R) ELECTRICAL TEST / FINISH DESCRIPTION Test Location: KYEC,TAIWAN Fault Coverage: 100% Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 10 Document No.001-88018 Rev. *A ECN # 4417735 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate Test Condition (Temp/Bias) Dynamic Operating Condition, Vcc = 3.8V, 150C Dynamic Operating Condition, Vcc = 4.5V, 150C JESD22-A108 Dynamic Operating Condition, Vcc = 3.8V, 150C JESD22-A108 High Temperature Steady State Life Static Operating Condition, Vcc = 3.63V, 150C JESD22-A108 JEDEC STD 22-A110: 140C, 85%RH, 3.63V High Accelerated Saturation Test Precondition: JESD22 Moisture Sensitivity Level (HAST) (192 Hrs., 30C, 60% RH, 220C Reflow) MIL-STD-883, Method 1010, Condition C, -65C to 150C Temperature Cycle Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30C, 60% RH, 220C Reflow) Result P/F P P P P P JESD22-A102, 121C, 100%RH, 15 PSIG Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30C, 60% RH, 220C Reflow) P High Temp Storage JESD22-A103:165C, no bias P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JEDEC EIA/JESD22-A114 P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V JESD22-C101 P Current Density Aged Bond Pull Meets the Technology Device Level R eliability Specifications P 200°C, 4HRS MIL-STD-883, Method 2011 P J-STD-020 Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30C, 60% RH, 260C Reflow) P In accordance with JEDEC 17 P Pressure Cooker Test Acoustic Microscopy Latch-up Sensitivity Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 10 Document No.001-88018 Rev. *A ECN # 4417735 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate1 High Temperature Operating Life2,3 Long Term Failure Rate 1 2 3 4 Device Tested/ Device Hours # Fails Activation Energy Thermal AF4 Failure Rate5 11,345 1 N/A N/A 88 PPM 1,794,740DHRs 3 0.7 170 14 FIT A production burn-in of 12 Hrs at 150C, 4.5V is required for the product. Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. 4 EFR Failure Rate based on QTP #004803 and QTP #99311 4 LFR Failure Rate based on QTP #99311 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 10 Document No.001-88018 Rev. *A ECN # 4417735 Reliability Test Data QTP #: 004803 Device STRESS: Fab Lot # Samp Rej 610109433/5/6 CSPI-R COMP 9 0 Failure Mechanism 4051552 4051552 610109433/5/6 CSPI-R COMP 9 0 CSPI-R COMP 3 0 STATIC LATCH-UP TESTING (125C, 10V, +/300mA) CY7C1399B-VC (7C1399H) STRESS: Duration ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 (2,200V) CY7C1399B-VC (7C1399H) STRESS: Ass Loc ESD-CHARGE DEVICE MODEL (500V) CY7C1399B-VC (7C1399H) STRESS: Assy Lot # 4051552 610109433/5/6 HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 3.8V, Vcc Max) CY7C1399B-VC (7C1399H) 4051552 610109433/34/35 CSPI-R 48 3028 0 50 0 50 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE COND 192 HR 30C/60%RH CY7C1399B-VC (7C1399H) STRESS: 4051552 610109433/34/35 CSPI-R 168 TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH (MSL3) CY7C1399B-VC (7C1399H) 4051552 610109433/34/35 CSPI-R 300 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 10 Document No.001-88018 Rev. *A ECN # 4417735 Reliability Test Data QTP #: 99311 DEVICE STRESS: ASSY-LOC FABLOT# ASSYLOT# DURATION S/S REJ FAIL MODE HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 4.5V) CY7C1329-AC (7C1329D) CSPI-R 4905886 619909761 48 2988 0 CY7C1329-AC (7C1329D) CSPI-R 4905886 619909761 48 1205 0 CY7C1329-AC (7C1329D) CSPI-R 4905886 619909776 48 871 0 CY7C1329-AC (7C1329D) CSPI-R 4909345 619911324 48 1584 1 CY7C1329-AC (7C1329D) CSPI-R 4909345 619911327 48 1669 0 4853292 4901357 619902690 619903817 1000V 750V 3 3 0 0 2200V 2200V 3 3 0 0 COMP 3 0 STRESS: ESD-CHARGE DEVICE MODEL CY7C1329-AC (7C1329D) CY7C1329-AC (7C1329D) STRESS: CSPI-R CSPI-R 4853292 4901357 619902690 619903817 STATIC LATCH-UP TESTING (125C, 10V, +/-200mA) CY7C1329-AC (7C1329D) STRESS: CSPI-R CSPI-R ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 CY7C1329-AC (7C1329D) CY7C1329-AC (7C1329D) STRESS: CSPI-R 4853292 619902690 HI-ACCEL SATURATION TEST (140C/85%RH/3.63V), PRECOND. 192 HRS 30C/60%RH CY7C1329-AC (7C1329D) CY7C1329-AC (7C1329D) CSPI-R CSPI-R 4853292 4853292 619902690 619902690 128 256 48 48 0 0 CY7C1329-AC (7C1329D) CSPI-R 4901357 619903817 128 48 0 336 336 48 48 0 0 80 168 80 80 0 0 STRESS: HIGH TEMPERATURE STORAGE (165C, NO BIAS) CY7C1329-AC (7C1329D) CY7C1329-AC (7C1329D) STRESS: CSPI-R CSPI-R 4842121 4843204 619815465 619815797 HIGH TEMP STEADY STATE LIFE TEST (150C, 3.63V) CY7C1329-AC (7C1329D) CY7C1329-AC (7C1329D) CSPI-R CSPI-R 4842121 4842121 619815465 619815465 CY7C1329-AC (7C1329D) CSPI-R 4843204 619815797 80 80 0 CY7C1329-AC (7C1329D) CSPI-R 4843204 619815797 168 80 0 STRESS: 1 PARTICLE DEFECT HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 3.8V) CY7C1329-AC (7C1329D) CY7C1329-AC (7C1329D) CSPI-R CSPI-R 4905886 4905886 619909761 619909761 80 500 1196 799 0 0 CY7C1329-AC (7C1329D) CSPI-R 4909345 CY7C1329-AC (7C1329D) CSPI-R 4909345 619911324 80 1491 1 1 UNKNOWN CAUSE 619911324 500 1199 1 CY7C1329-AC (7C1329D) CSPI-R 1 UNKNOWN CAUSE 4909345 619911327 80 1640 0 CY7C1329-AC (7C1329D) CSPI-R 4909345 619911327 500 1451 1 1 UNKNOWN CAUSE Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 10 Document No.001-88018 Rev. *A ECN # 4417735 Reliability Test Data QTP #: 99311 DEVICE STRESS: ASSY-LOC FABLOT# REJ FAIL MODE CSPI-R CSPI-R 4853292 4901357 619902690 619903817 168 168 619902690 619903817 9.98V 9.96V 48 46 0 0 STATIC LATCH-UP TESTING (+/-200 mA) CY7C1329-AC (7C1329D) CY7C1329-AC (7C1329D) STRESS: DURATION S/S PRESSURE COOKER TEST (121C, 100%RH) CY7C1329-AC (7C1329D) CY7C1329-AC (7C1329D) STRESS: ASSYLOT# CSPI-R CSPI-R 4853292 4901357 3 3 0 0 TC COND. C, -65 TO 150C, PRECOND. 192 HRS 30C/60%RH (MSL 3) CY7C1329-AC (7C1329D) CSPI-R 4842121 619815465 300 48 0 CY7C1329-AC (7C1329D) CSPI-R 4842121 619815465 1000 48 0 CY7C1329-AC (7C1329D) CSPI-R 4843204 619815797 300 45 0 CY7C1329-AC (7C1329D) CSPI-R 4843204 619815797 1000 45 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 10 Document No.001-88018 Rev. *A ECN # 4417735 Document History Page Document Title: FAB 4 Document Number: QTP # 004803 :FAST SYNCHRONOUS STATIC RAM (CY7C1399B) , R52D-3 TECHNOLOGY, 001-88018 Rev. ECN Orig. of No. Change ** 4033719 ILZ *A 4417735 JYF Description of Change Initial Spec Release Qualification report published on Cypress.com is not in spec format. Initiated spec for QTP 004803 and removed all Cypress reference spec and replaced with Industry standard. Updated package availability based on current qualified assembly Sunset review: Updated QTP title page and Reliability Tests Performed table (EFR/LFR, HTSSL, HAST, TCT, PCT, HTS, ESD-HBM, ESD-CDM, Current Density, Aged Bond Pull, Acoustic Microscopy) for template alignment. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 10