Document No. 001-71957 Rev. *B ECN #: 4502537 Cypress Semiconductor Automotive Product Qualification Report QTP# 104407 VERSION*B September, 2014 Automotive PSoC Device Family S8DIN-5RP Technology, Fab4 CY8C20566A Automotive Capsense(R) Applications CY8C20236A Automotive Capsense(R) Applications FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Josephine Pineda Reliability Engineer Reviewed By: Rene Rodgers Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 10 Document No. 001-71957 Rev. *B ECN #: 4502537 PRODUCT QUALIFICATION HISTORY Qual Report 104407 Description of Qualification Purpose Qualification of Automotive SONOS S8 Technology in FAB4 using 8A20x66E Device Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 10 Date Comp Jul 11 Document No. 001-71957 Rev. *B ECN #: 4502537 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify CY8C20566A Automotive Device at Fab 4, S8DIN-5RP Technology CY8C20566A-12PVXE, CY8C20566A-24PVXA, CY8C20566A-12PVXA, Marketing Part #: CY8C20236A-24LKXA Device Description: Automotive PSOC Programmable System – On – Chip Cypress Division: Cypress Semiconductor Corporation – Programmable System Division TECHNOLOGY/FAB PROCESS DESCRIPTION – S8DIN-5RP Number of Metal Layers: 3 Metal Composition: Metal 1: 100ª Ti / 3200ª Al 0.5% Cu / 300 A TiW Metal 2: 100ª Ti / 3200ª Al 0.5% Cu / 300 A TiW Metal 3: 500ª TiW / 21250ª Al 0.5% Cu / 300 A TiW Passivation Type and Materials: 700A TEOS / 5400A Si3N4 Generic Process Technology/Design Rule (µ-drawn): 1P3M, 0.13 um Gate Oxide Material/Thickness (MOS): 120Å SiO2/ 32Å SiO2 Name/Location of Die Fab (prime) Facility: CMI / Minnesota Die Fab Line ID/Wafer Process ID: Fab4, S8DIN-5RP PACKAGE AVAILABILITY PACKAGE ASSEMBLY FACILITY SITE 48L SSOP CML-R 16L QFN (Chip-on-Lead) Amkor-L (Korea) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 10 Document No. 001-71957 Rev. *B ECN #: 4502537 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: SP48 Package Outline, Type, or Name: 48-Lead Shrunk Small Outline Package (SSOP) Mold Compound Name/Manufacturer: Kyocera KEG3000 Mold Compound Flammability Rating: V-0 PER UL-94 Mold Compound Alpha Emission Rate: 0.002 CPH/cm2 Oxygen Rating Index: N/A Lead Frame Material: Copper Lead Finish, Composition / Thickness: NiPdAu Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Die Attach Supplier: Henkel Die Attach Material: QMI 509 Die Attach Method: Epoxy Bond Diagram Designation: 001-61640 Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0 mil Thermal Resistance Theta JA °C/W: 101 °C/W Package Cross Section Yes/No: No Assembly Process Flow: 001-62661 Name/Location of Assembly (prime) facility: CML-R MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Note: Please contact a Cypress Representative for other packages availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 10 Document No. 001-71957 Rev. *B ECN #: 4502537 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate NVM Endurance /High Temperature Operating Life Latent Failure Rate Test Condition (Temp/Bias) AEC-Q100-008 and JESD22-A108, 150°C Dynamic Operating Condition, Vcc Max = 2.1V JESD22-A108, 150°C Dynamic Operating Condition, Vcc Max = 2.1V AEC-Q100-005 and JESD22-A108, 150°C Dynamic Operating Condition, Vcc Max = 2.1V High Accelerated Saturation Test (HAST) JESD22-A110, 130°C, 5.25V, 85%RH Precondition: JESD22-A113 Moisture Sensitivity MSL 3 (192 Hrs., 30°C, 60% RH, 260°C Reflow) Temperature Cycle JESD22-A104, -65°C to 150°C Precondition: JESD22-A113 Moisture Sensitivity MSL 3 (192 Hrs., 30°C, 60% RH, 260°C Reflow) JESD22-A102, 121°C, 100%RH, 15 Psig Precondition: JESD22-A113 Moisture Sensitivity MSL 3 (192 Hrs., 30°C, 60% RH, 260°C Reflow) Pressure Cooker Result P/F P P P P P P Electrostatic Discharge Human Body Model (ESD-HBM) AEC-Q100-002 500V/1000V/1500V/2000V P Electrostatic Discharge Charge Device Model (ESD-CDM) AEC-Q100-011 250V/500V P Wire Ball Shear AEC-Q100-001 P Wire Bond Pull Mil-Std 883, Method 2011 P Electrical Distribution AEC-Q100-009 P NVM Endurance/Data Retention AEC-Q100-005, 150°C, non-biased P Final Visual JESD22-B101 P Physical Dimensions JESD22-B100/108 P Solderability JESD22-B102 P Static Latch-up AEC-Q100-004, 125C,± 140mA Dye Penetrant Test Test to determine the existence and extent of cracks, Criteria: No Package Crack Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 10 P P Document No. 001-71957 Rev. *B ECN #: 4502537 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate NVM Endurance / High Temperature 1,2 Operating Life Long Term Failure Rate Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate 10,982 Devices 0 N/A N/A 0 PPM 207,360 Device Hours 0 0.7 170 26 FIT 1 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate.. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann’s constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 10 Document No. 001-71957 Rev. *B ECN #: 4502537 Reliability Test Data QTP #: Device 104407 Fab Lot # Assy Lot # Assy Loc Duration Samp Rej CY8C20566A (8ª205662A) 4944970 611053462 CML-R COMP 15 0 CY8C20566A (8ª205662A) 4028092 611053460 CML-R COMP 15 0 CY8C20566A (8ª205662A) 4021040 611053459 CML-R COMP 15 0 4944970 611053462 CML-R COMP 30 0 4944970 611053462 CML-R COMP 30 0 611053462 CML-R COMP 5 0 Failure Mechanism STRESS: ACOUSTICS STRESS: BALL SHEAR CY8C20566A (8ª205662A) STRESS: BOND PULL CY8C20566A (8ª205662A) STRESS: CONSTRUCTIONAL ANALYSIS CY8C20566A (8ª205662A) 4944970 STRESS: DYE PENETRANT TEST CY8C20566A (8ª205662A) 4944970 611053462 CML-R COMP 15 0 CY8C20566A (8ª205662A) 4028092 611053460 CML-R COMP 15 0 CY8C20566A (8ª205662A) 4021040 611053459 CML-R COMP 15 0 STRESS: ELECTRICAL DISTRIBUTION CY8C20566A (8ª205662A) 4944970 611053462 CML-R COMP 30 0 CY8C20566A (8ª205662A) 4028092 611053460 CML-R COMP 30 0 CY8C20566A (8ª205662A) 4021040 611053459 CML-R COMP 30 0 CML-R COMP 3 0 CML-R COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 STRESS: ESD-CHARGE DEVICE MODEL, 250V CY8C20566A (8ª205662A) 4944970 611053462 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY8C20566A (8A205662A) 4944970 611053462 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114, 500V CY8C20566A (8ª205662A) 4944970 611053462 CML-R STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114, 1,000V CY8C20566A (8ª205662A) 4944970 611053462 CML-R STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114, 1,500V CY8C20566A (8ª205662A) 4944970 611053462 CML-R STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114, 2,000V CY8C20566A (8ª205662A) 4944970 611053462 CML-R Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 10 Document No. 001-71957 Rev. *B ECN #: 4502537 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 104407 Assy Loc Duration Samp Rej Failure Mechanism STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 5.25V, PRE COND 192 HR 30C/60%RH, MSL3 CY8C22345 (8A22345AK) 4932232 610931673 CML-RA 96 80 0 CY8C22345 (8A22345AK) 4934794 610932830 CML-RA 96 80 0 CY8C22345 (8A22345AK) 4942780 610942047 CML-RA 96 80 0 1000 80 0 STRESS: HIGH TEMPERATURE STORAGE LIFE TEST, 150C CY8C20566A (8A205662A) 4944970 611053462 CML-RA STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 2.1V, Vcc Max CY8C20566A (8ª205662A) 4944970 611053462 CML-RA 24 3613 0 CY8C20566A (8ª205662A) 4028092 611053460 CML-RA 24 3680 0 CY8C20566A (8A205662A) 4021040 611053459 CML-RA 24 3689 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 2.1V, Vcc Max CY8C20566A (8ª205662A) 4944970 611053462 CML-RA 432 80 0 CY8C20566A (8ª205662A) 4028092 611053460 CML-RA 432 80 0 CY8C20566A (8A205662A) 4021040 611053459 CML-RA 432 80 0 STRESS: NVM ENDURANCE / HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 2.1V, Vcc Max CY8C20566A (8ª205662A) 4944970 611053462 CML-RA 432 80 0 CY8C20566A (8ª205662A) 4028092 611053460 CML-RA 432 80 0 CY8C20566A (8A205662A) 4021040 611053459 CML-RA 432 80 0 STRESS: NVM ENDURANCE / DATA RETENTION TEST CY8C20566A (8ª205662A) 4944970 611053462 CML-R 1000 80 0 CY8C20566A (8ª205662A) 4028092 611053460 CML-R 1000 80 0 CY8C20566A (8ª205662A) 4021040 611053459 CML-R 1000 80 0 STRESS: PHYSICAL DIMENSION CY8C20566A (8ª205662A) 4944970 611053462 CML-R COMP 10 0 CY8C20566A (8ª205662A) 4028092 611053460 CML-R COMP 10 0 CY8C20566A (8ª205662A) 4021040 611053459 CML-R COMP 10 0 CML-R COMP 5 0 STRESS: POST TEMPERATURE CYCLE WIRE BOND PULL CY8C20566A (8ª205662A) 4944970 611053462 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 10 Document No. 001-71957 Rev. *B ECN #: 4502537 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 104407 Assy Loc Duration Samp Rej Failure Mechanism STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CY8C20566A (8ª205662A) 4944970 611053462 CML-RA 96 80 0 CY8C20566A (8ª205662A) 4944970 611053462 CML-RA 168 80 0 CY8C20566A (8ª205662A) 4028092 611053460 CML-RA 96 80 0 CY8C20566A (8ª205662A) 4028092 611053460 CML-RA 168 80 0 CY8C20566A (8ª205662A) 4021040 611053459 CML-RA 96 80 0 CY8C20566A (8A205662A) 4021040 611053459 CML-RA 168 80 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CY8C20566A (8ª205662A) 4944970 611053462 CML-R 500 85 0 CY8C20566A (8ª205662A) 4028092 611053460 CML-R 500 80 0 CY8C20566A (8A205662A) 4021040 611053459 CML-R 500 80 0 CY8C20566A (8ª205662A) 4944970 611053462 CML-R COMP 15 0 CY8C20566A (8ª205662A) 4028092 611053460 CML-R COMP 15 0 CY8C20566A (8ª205662A) 4021040 611053459 CML-R COMP 15 0 CML-R COMP 6 0 STRESS: SOLDERABILITY STRESS: STATIC LATCH-UP TESTING, +/140mA CY8C20566A (8ª205662A) 4944970 611053462 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 10 Document No. 001-71957 Rev. *B ECN #: 4502537 Document History Page Document Title: QTP 104407: AUTOMOTIVE PSOC KRYPTON CY8C20566A DEVICE FAMILY, S8DIN-5RP TECHNOLOGY, FAB4 Document Number: 001-71957 Rev. ECN No. Orig. of Change Description of Change ** *A 3336771 3556418 NSR NSR *B 4502537 JYF Initial spec release Added CY8C20236A and 16L QFN (Chip-on-Lead) package from Amkor-L. Remove QTP Version 1.0. Sunset review: Updated QTP title page and Reliability Tests Performed table ( PCT, TCT, HAST, DPT, FVI, Static Latch-Up) for template alignment; Updated division of the device from MPD to PSD. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 10