Document No.001-88019 Rev. *A ECN # 4417735 Cypress Semiconductor Product Qualification Report QTP# 012705 VERSION*A June, 2014 1MEG SRAM FAST ASYNCHRONOUS FAMILY R52FFD-3 TECHNOLOGY , FAB 4 CY7C1021BV33 64K x 16 Static RAM CY7C1019BV33 128K x 8 Static RAM FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Josephine Pineda Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 11 Document No.001-88019 Rev. *A ECN # 4417735 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 000505 New 1Meg Asynchronous, CY7C1021BV33, R52FD-3 Oct 00 011205 New Technology Derivative R52FFD-3, Fab 4 / New 1Meg, GB/s Quad Port Switch CY7C04312BV/ CY7C04314BV Jun 01 012705 Transfer of CY7C1021BV33 from Technology R52FD-3 to R52FFD-3 Apr 02 Cypress products are manufactured using qualified processes. The technology qualification for this product is referenced above and must be considered to get a complete and thorough evaluation of the reliability of the product. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 11 Document No.001-88019 Rev. *A ECN # 4417735 TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 2 Metal Composition: Metal 1: 500Å TiW/6,000Å Al-0.5%Cu/300Å TiW Metal 2: 300Å Ti/8,000Å Al-0.5%Cu/300Å TiW Passivation Type and Materials: 1,000Å Oxide / 9,000 Å Nitride Free Phosphorus contents in top glass layer(%): 0% Die Coating(s), if used: N/A Number of Transistors: 25.2 million Number of Gates: 8.4 million Generic Process Technology/Design Rule (-drawn): CMOS, Double Metal, 0.25 m Gate Oxide Material/Thickness (MOS): SiO2 Name/Location of Die Fab (prime) Facility: Cypress Semiconductor – Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4/R52FFD-3 55Å PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY 44-pin SOJ (extended qual. to 32-pin) Cypress Philippines (CML-R) 44-pin TSOP II Cypress Philippines (CML-R) 48-Ball FBGA Cypress Philippines (CML-R), ASE Taiwan (TAIWAN-G) Note: Package Qualification details upon request Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 11 Document No.001-88019 Rev. *A ECN # 4417735 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: ZS444 44-lead Thin Small Outline Package (TSSOP II) Hitachi CEL 9200 V-O per UL94 Oxygen Rating Index: >28% Lead Frame Material: Copper Lead Finish, Composition / Thickness: Solder Plate, 85%Sn, 15%Pb Die Backside Preparation Method/Metallization: Die Separation Method: N/A Die Attach Supplier: Dexter Die Attach Material: QMI 509 Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0um Thermal Resistance Theta JA °C/W: 47°C/W Package Cross Section Yes/No: N/A Wafer Saw Name/Location of Assembly (prime) facility: Cypress Philippines (CML-R) ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-RA, CHINA-JT Fault Coverage: 100% Company Confidential A printed copy of this document is considered uncontrolled. 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Page 4 of 11 Document No.001-88019 Rev. *A ECN # 4417735 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias) High Temperature Operating Life Dynamic Operating Condition, 3.8V, 150C, Vcc Max Early Failure Rate Dynamic Operating Condition, 3.8V, 125C, Vcc Max JESD22-A108 High Temperature Operating Life Dynamic Operating Condition, 3.8V, 150C, Vcc Max Latent Failure Rate Dynamic Operating Condition, 3.8V, 125C, Vcc Max JESD22-A108 High Temperature Steady State Life Static Operating Condition, 3.8 V,150C, >Vcc Max JESD22-A108 Result P/F P P P High Accelerated Saturation Test (HAST) JEDEC STD 22-A110: 140C, 85%RH, 3.63V Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30C, 60% RH, 220C Reflow) P Pressure Cooker JESD22-A102, 12C, 100%RH, 15 PSIG Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30C, 60% RH, 220C Reflow) MIL-STD-883, Method 1010, Condition C, -65C to 150C Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30C, 60% RH, 220C Reflow) P Dynamic Operating Condition, -30C, 4.3V, f = 4MHz JESD22-A108 P Temperature Cycle Low Temperature Operating Life Electrostatic Discharge 500V, JESD22-C101 P P Charge Device Model (ESD-CDM) Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JEDEC EIA/JESD22-A114 P J-STD-020 Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30C, 60% RH, 220C Reflow) P Acoustic Microscopy, MSL3 SEM X-Section MIL-STD-883, Method 2018.2 P Static Latch-up Sensitivity +/-300mA, In accordance with JEDEC 17 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 11 P Document No.001-88019 Rev. *A ECN # 4417735 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life1,2, Long Term Failure Rate 1 2 3 4 Device Tested/ Device Hours # Fails Activation Energy Thermal AF4 N/A N/A 0.7 55-170 4,192 1,210,836 DHRs Failure Rate5 0 PPM 8 FIT A production burn-in of 12 Hrs at 150C, 4.5V is required for the product. Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 11 Document No.001-88019 Rev. *A ECN # 4417735 4 EFR and LFR Failure Rate based on QTP #012705, QTP #011205 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 11 Document No.001-88019 Rev. *A ECN # 4417735 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # 012705 Assy Loc Duration Samp Rej Failure Mechanism HIGH TEMP DYNAMIC OPERTING LIFE - EARLY FAILURE RATE, 150C, 3.8V, VCC MAX CY7C1021BV33-ZSC (7C1321F) 4103583 610112752 CSPI-R 48 1500 0 CY7C1021BV33-ZSC (7C1321F) 4103618 610113224 CSPI-R 48 1488 0 STRESS: HIGH TEMP DYNAMIC OPERTING LIFE-LATENT FAILURE RATE, 150C, 3.8V, Vcc Max CY7C1021BV33-ZSC (7C1321F) 4103583 610112752 CSPI-R 80 390 0 CY7C1021BV33-ZSC(7C1321F) 4103583 610112752 CSPI-R 500 390 0 CY7C1021BV33-ZSC (7C1321F) 4103618 610113224 CSPI-R 80 398 0 CY7C1021BV33-ZSC (7C1321F) 4103618 610113224 CSPI-R 500 398 0 CSPI-R COMP 9 0 STRESS ESD-CHARGE DEVICE MODE, 500V CY7C1021BV33-ZSC (7C1321F) STRESS 610112752 ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY7C1021BV33-ZSC (7C1321F) STRESS 4103583 4103583 610112752 CSPI-R COMP 9 0 CSPI-R COMP 3 0 STATIC LATCH-UP TESTING, +/-300mA CY7C1021BV33-ZSC (7C1321F) 4103583 610112752 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 8 of 11 Document No.001-88019 Rev. *A ECN # 4417735 Reliability Test Data QTP #: Device 012705 Fab Lot # Assy Lot # Ass Loc Duration Samp Rej CY7C0430BV-BGI (7C04301A) 4044731 610051943 TAIWN-G COMP 15 0 CY7C0430BV-BGI (7C04301A) 4045135 610101405 TAIWN-G COMP 15 0 CY7C0430BV-BGI (7C04301A) 4047508 610103357 TAIWN-G COMP 15 0 STRESS: STRESS: ACOUSTIC, MSL3 HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 3.8V, Vcc Max CY7C0430BV-BGI (7C04301A) 4049157 610108702 TAIWN-G 96 700 0 CY7C0430BV-BGI (7C04301A) 4101120 610110033 TAIWN-G 96 504 0 STRESS: Failure Mechanism HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 3.8V, Vcc Max CY7C0430BV-BGI (7C04301A) 4049157 610108702 TAIWN-G 168 410 0 CY7C0430BV-BGI (7C04301A) 4049157 610108702 TAIWN-G 500 409 0 CY7C0430BV-BGI (7C04301A) 4049157 610108702 TAIWN-G 1000 408 0 CY7C0430BV-BGI (7C04301A) 4101120 610110033 TAIWN-G 168 410 0 CY7C0430BV-BGI (7C04301A) 4101120 610110033 TAIWN-G 500 409 0 CY7C0430BV-BGI (7C04301A) 4101120 610110033 TAIWN-G 1000 407 0 610110033 TAIWN-G COMP 9 0 TAIWN-G COMP 9 0 TAIWN-G COMP 3 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY7C0430BV-BGI (7C04301A) STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY7C0430BV-BGI (7C04301A) STRESS: 4101120 610110033 STATIC LATCH-UP TESTING, 125C, 10V, +/300mA CY7C0430BV-BGI (7C04301A) STRESS: 4101120 4101120 610110033 LOW TEMPERATURE OPERATING LIFE, -30C, 4.3V CY7C0430BV-BGI (7C04301A) 4025035 610044436 TAIWN-G 500 48 0 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 3.63V), PRE COND 192 HR 30C/60%RH, MSL3 CY7C0430BV-BGI (7C04301A) 4044731 610051943 TAIWN-G 128 46 0 CY7C0430BV-BGI (7C04301A) 4045135 610101405 TAIWN-G 128 57 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192 HR 30C/60%RH, MSL3 CY7C0430BV-BGI (7C04301A) 4044731 610051943 TAIWN-G 168 48 0 CY7C0430BV-BGI (7C04301A) 4045135 610101405 TAIWN-G 168 50 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 11 Document No.001-88019 Rev. *A ECN # 4417735 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # 011205 Ass Loc Duration Samp Rej Failure Mechanism TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH, MSL3 CY7C0430BV-BGI (7C04301A) 4044731 610051943 TAIWN-G 300 48 0 CY7C0430BV-BGI (7C04301A) 4044731 610051943 TAIWN-G 500 48 0 CY7C0430BV-BGI (7C04301A) 4044731 610051943 TAIWN-G 1000 47 0 CY7C0430BV-BGI (7C04301A) 4045135 610101405 TAIWN-G 300 50 0 CY7C0430BV-BGI (7C04301A) 4045135 610101405 TAIWN-G 500 50 0 CY7C0430BV-BGI (7C04301A) 4045135 610101405 TAIWN-G 1000 50 0 *STRESS: TC COND. C -65C TO 150C CY7C0430BV-BGI (7C04301A) 4049157 610108702 TAIWN-G 300 48 0 CY7C0430BV-BGI (7C04301A) 4049157 610108702 TAIWN-G 500 48 0 CY7C0430BV-BGI (7C04301A) 4049157 610108702 TAIWN-G 1000 47 0 CY7C0430BV-BGI (7C04301A) 4101120 610110033 TAIWN-G 300 48 0 CY7C0430BV-BGI (7C04301A) 4101120 610110033 TAIWN-G 500 48 0 CY7C0430BV-BGI (7C04301A) 4101120 610110033 TAIWN-G 1000 47 0 *Note: No precondition performed. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 11 Document No.001-88019 Rev. *A ECN # 4417735 Document History Page Document Title: QTP # 012705 : 1MEG SRAM FAST ASYNCHRONOUS FAMILY (CY7C1019BV33/CY7C1021BV33) R52FFD-3 TECHNOLOGY , FAB 4 Document Number: 001-88019 Rev. ECN Orig. of No. Change ** 4033719 ILZ *A 4417735 JYF Description of Change Initial Spec Release Qualification report published on Cypress.com is not in spec format. Initiated spec for QTP 012705 and removed all Cypress reference spec and replaced with Industry standard. Updated package availability based on current qualified assembly Sunset review: Updated QTP title page and Reliability Tests Performed table (EFR/LFR, HTSSL, HAST, PCT, TCT, LTOL, ESD-CDM/HBM, Acoustic Microscopy, SEM X-Section, Static Latch-Up) for template alignment. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 11