Document No. 001-81645 Rev. *C ECN #: 4572415 Cypress Semiconductor Product Qualification Report QTP# 063105 VERSION*C November, 2014 enCoRe III Device Family S4AD-5 Technology, Fab 4 CY7C64215 Mixed Signal Array with On-Chip Controller CY7C64225 USB to UART Bridge Controller FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Rene Rodgers Reliability Engineer Reviewed By: Loren Zapanta Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 12 Document No. 001-81645 Rev. *C ECN #: 4572415 PRODUCT QUALIFICATION HISTORY QTP Number 052004 053603 073706 Description of Qualification Purpose PSoC 8C21001A Neutron Product Family on SONOS S4AD-5 Technology, Fab4 PSoC 8C24x94 Radon Device Product Family on S4AD-5 Technology, Fab4 Minor Changes to Metal 2 (MM2) masks on Radon Device (8C24X94AC) on S4AD-5Technology, Fab 4 Date Aug 05 Sep 05 Jan 08 081904 Qualify new Mask (MM2, Vneg Cut) on Radon for Industrial on S4AD-5 Technology, Fab4 Jun 08 063105 USB 7C64215 enCoRe III Device on S4AD-5 Technology, Fab4 Aug 06 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 12 Document No. 001-81645 Rev. *C ECN #: 4572415 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify New Device CY7C64215 enCoRe III Product Family in S4D-5 in Fab 4 Marketing Part #: CY7C64215 Device Description: 3.3V and 5V Industrial 24Mhz Programmable System on Chip Cypress Division: Cypress Semiconductor Corporation – Data Communication Division TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 2 Metal Composition: Passivation Type and Materials: Metal 1: 500A Ti/6,000A Al /300A TiW Metal 2: 500A Ti/8,000A Al /300A TiW 7,000A TEOS/6,000A Si3N4 Free Phosphorus contents in top glass layer (%): 0% Number of Transistors in Device: 150,000 Number of Gates in Device 25,000 Generic Process Technology/Design Rule (-drawn): Single Poly, Double Metal, 0.35 m Gate Oxide Material/Thickness (MOS): SiO2 / 110A Name/Location of Die Fab (prime) Facility: Cypress Semiconductor - Minnesota Die Fab Line ID/Wafer Process ID: Fab 4, S4AD-5, SONOS PACKAGE AVAILABILITY PACKAGE ASSEMBLY FACILITY SITE 56-Lead MLF SEOUL-L, CML-RA 28-Lead SSOP TAIWN-T, PHIL-M Note: Package Qualification details upon request. 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Page 3 of 12 Document No. 001-81645 Rev. *C ECN #: 4572415 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: Oxygen Rating Index: LY56 Lead Frame Material: 56-Lead QFN Sumitomo EME G700 V-O per UL94 N/A Copper Lead Finish, Composition / Thickness: Pure Sn (100%) Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Sawing 100% Die Attach Supplier: Ablestik Die Attach Material: 8290 Die Attach Method: Epoxy Bond Diagram Designation: 10-06566 Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0mil Thermal Resistance Theta JA °C/W: 23°C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 49-10994 Name/Location of Assembly (prime) facility: Amkor Seoul-Korea (SEOUL-L) MSL Level 1 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Note: Please contact a Cypress Representative for other package availability. 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Page 4 of 12 Document No. 001-81645 Rev. *C ECN #: 4572415 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) High Temperature Operating Life Dynamic Operating Condition, Vcc Max=5.5V, 125C Early Failure Rate (EFR) JESD22-A108 High Temperature Operating Life Dynamic Operating Condition, Vcc Max=5.5V, 125C Latent Failure Rate (LFR) JESD22-A108 Temperature Cycle MIL-STD-883, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 1 Result P/F P P P 168 Hrs, 85C/85%RH+ Reflow, 260C+0, -5C High Accelerated Stress Test (HAST) 130C, 5.25V, 85%RH, JESD22-A110 Precondition: JESD22 Moisture Sensitivity Level 1 P 168 Hrs, 85C/85%RH+ Reflow, 260C+0, -5C High Temperature Steady State life 125C, 5.5V, Vcc Max P JESD22-A108 Low Temperature Operating Life -30C, 5.5V, 8MHZ P JESD22-A108 Pressure Cooker 121C, 100%RH, 15Psig, JESD22-A102 Precondition: JESD22 Moisture Sensitivity Level 1 P 168 Hrs, 85C/85%RH+ Reflow, 260C+0, -5C Aged Bond Strength 200C, 4hrs MIL-STD-883, Method 2011 P Data Retention 150°C ± 5°C No Bias P JESD22-A117 and JESD22-A103 Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V, JESD22-A114 P Electrostatic Discharge 2,200V P Human Body Model (ESD-HBM) MIL-STD-883, Method 3015.7 Electrostatic Discharge 500V, JESD22-C101 P Endurance Test MIL-STD-883, Method 883-1033 P Acoustic Microscopy J-STD-020 P Charge Device Model (ESD-CDM) JESD22-A117 and JESD22-A103 Dynamic Latch-up 125C, 6.9V, JESD78 P Static Latch-up 125C, 300mA, JESD78 P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 12 Document No. 001-81645 Rev. *C ECN #: 4572415 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life 1 Early Failure Rate 1, 2 High Temperature Operating Life Long Term Failure Rate 1 2 3 Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate 1,029 Devices 0 N/A N/A 0 ppm 528,750 DHRs 0 0.7 55 31 FIT Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann’s constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use condition Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 12 Document No. 001-81645 Rev. *C ECN #: 4572415 Reliability Test Data QTP #: 052004 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL1 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 15 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M COMP 15 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M COMP 15 0 STRESS: AGE BOND STRENGTH CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 10 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M COMP 10 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M COMP 10 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 500 256 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 1000 256 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 500 256 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 1000 254 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 500 252 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 1000 252 0 4516647 610521157 TAIWN-T COMP 45 0 STRESS: ENDURANCE CY8C21534 (8C21534A) STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (2,200V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 12 Document No. 001-81645 Rev. *C ECN #: 4572415 Reliability Test Data QTP #: 052004 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 120 1002 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 120 1002 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 120 1002 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 750 235 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T 750 235 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T 750 235 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (125C, 5.5V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 168 76 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 336 76 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 168 HR 85C/85%RH (MSL1) CY8C21234 (8C21234A) 4516647 610527569 PHIL-M 128 49 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 128 44 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 128 44 0 500 45 0 STRESS: LOW TEMPERATURE OPERATING LIFE (-30C, 5.5V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 168 HR 85C/85%RH (MSL1) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 168 45 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 336 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 168 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 336 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 168 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 336 45 0 STRESS: STATIC LATCH-UP TESTING (125C, 11V, 300mA) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 3 0 610521157 TAIWN-T COMP 3 0 STRESS: DYNAMIC LATCH-UP (8.3V) CY8C21534 (8C21534A) 4516647 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 12 Document No. 001-81645 Rev. *C ECN #: 4572415 Reliability Test Data QTP #: 052004 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH (MSL1) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 300 50 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 500 50 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 1000 50 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 300 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 1000 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 300 45 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 12 Document No. 001-81645 Rev. *C ECN #: 4572415 Reliability Test Data QTP #: 053603 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max CY8C24494 (8C24494A) 4529648 610537024 TAIWN-T 96 1029 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.5V, Vcc Max CY8C24494 (8C24494A) STRESS: 4529648 610537024 TAIWN-T 1024 177 0 TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH (MSL1) CY8C24494 (8C24494A) 4529648 610537024 TAIWN-T 500 44 0 CY8C24494 (8C24494A) 4529648 610537024 TAIWN-T 1000 44 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 12 Document No. 001-81645 Rev. *C ECN #: 4572415 Reliability Test Data QTP #: 073706 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: SORT YIELD CY8C24494 (8C24494A) STRESS: 4730443 COMP COMPARABLE DATA RETENTION, PLASTIC, 150C CY8C24494 (8C24494A) 4730443 610757002 TWN-T 500 43 0 CY8C24494 (8C24494A) 4730443 610757002 TWN-T 1000 43 0 CY8C24494 (8C24494A) 4730443 610757003 TWN-T 500 42 0 CY8C24494 (8C24494A) 4730443 610757003 TWN-T 1000 42 0 CY8C24494 (8C24494A) 4730443 610760988 TWN-T 500 80 0 CY8C24494 (8C24494A) 4730443 610760988 TWN-T 1000 80 0 CY8C24494 (8C24494A) 4730443 610757002 TWN-T COMP 40 0 CY8C24494 (8C24494A) 4730443 610757003 TWN-T COMP 44 0 CY8C24494 (8C24494A) 4730443 610760988 TWN-T COMP 79 0 STRESS: STRESS: ENDURANCE ETEST YIELD CY8C24494 (8C24494A) 4730443 COMP COMPARABLE Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 12 Document No. 001-81645 Rev. *C ECN #: 4572415 Document History Page Document Title: Document Number: QTP 063105: ENCORE III DEVICE FAMILY S4AD-5 TECHNOLOGY, FAB 4 001-81645 Rev. ECN Orig. of No. Change ** 3695017 NSR *A 4105599 JYF *B 4490321 JYF *C 4572415 RT Description of Change Initial Spec Release. Revision from the original qual report released in memo HGA-512: - Updated the QTP#063105 Version 1.1 to Version 2.0 - Added device CY7C64225 in the title page. - Changed the contact Reliability Engineer to Rene Rodgers. - Changed the product division from CCD to DCD. - Removed the Overall Die (or Mask) REV Level and What ID markings on Die information in the Product Description table to align with the current spec format. - Replaced the reference Cypress standards with the industry standards on the reliability tests performed table. Sunset Spec Review: Deleted Version 2.0 in QTP title page; Complete re-write of Reliability Tests Performed Table to align with current spec template. Sunset Review: Updated QTP title page for template alignment. Updated to include all of the QTP 053603 qual report data. (Spec 00188087). Revised product qualification history table to include history changes from QTP 53603. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 12