QTP 063105:ENCORE III DEVICE FAMILY S4AD-5 TECHNOLOGY, FAB 4

Document No. 001-81645 Rev. *C
ECN #: 4572415
Cypress Semiconductor
Product Qualification Report
QTP# 063105 VERSION*C
November, 2014
enCoRe III Device Family
S4AD-5 Technology, Fab 4
CY7C64215
Mixed Signal Array with On-Chip
Controller
CY7C64225
USB to UART Bridge Controller
FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT
[email protected] or via a CYLINK CRM CASE
Prepared By:
Rene Rodgers
Reliability Engineer
Reviewed By:
Loren Zapanta
Reliability Manager
Approved By:
Richard Oshiro
Reliability Director
Company Confidential
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Page 1 of 12
Document No. 001-81645 Rev. *C
ECN #: 4572415
PRODUCT QUALIFICATION HISTORY
QTP
Number
052004
053603
073706
Description of Qualification Purpose
PSoC 8C21001A Neutron Product Family on SONOS S4AD-5
Technology, Fab4
PSoC 8C24x94 Radon Device Product Family on S4AD-5 Technology,
Fab4
Minor Changes to Metal 2 (MM2) masks on Radon Device
(8C24X94AC) on S4AD-5Technology, Fab 4
Date
Aug 05
Sep 05
Jan 08
081904
Qualify new Mask (MM2, Vneg Cut) on Radon for Industrial on
S4AD-5 Technology, Fab4
Jun 08
063105
USB 7C64215 enCoRe III Device on S4AD-5 Technology, Fab4
Aug 06
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Page 2 of 12
Document No. 001-81645 Rev. *C
ECN #: 4572415
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: Qualify New Device CY7C64215 enCoRe III Product Family in S4D-5 in Fab 4
Marketing Part #:
CY7C64215
Device Description:
3.3V and 5V Industrial 24Mhz Programmable System on Chip
Cypress Division:
Cypress Semiconductor Corporation – Data Communication Division
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number of Metal Layers:
2
Metal Composition:
Passivation Type and Materials:
Metal 1: 500A Ti/6,000A Al /300A TiW
Metal 2: 500A Ti/8,000A Al /300A TiW
7,000A TEOS/6,000A Si3N4
Free Phosphorus contents in top glass layer (%):
0%
Number of Transistors in Device:
150,000
Number of Gates in Device
25,000
Generic Process Technology/Design Rule (-drawn): Single Poly, Double Metal, 0.35 m
Gate Oxide Material/Thickness (MOS):
SiO2 / 110A
Name/Location of Die Fab (prime) Facility:
Cypress Semiconductor - Minnesota
Die Fab Line ID/Wafer Process ID:
Fab 4, S4AD-5, SONOS
PACKAGE AVAILABILITY
PACKAGE
ASSEMBLY FACILITY SITE
56-Lead MLF
SEOUL-L, CML-RA
28-Lead SSOP
TAIWN-T, PHIL-M
Note: Package Qualification details upon request.
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Page 3 of 12
Document No. 001-81645 Rev. *C
ECN #: 4572415
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
Mold Compound Name/Manufacturer:
Mold Compound Flammability Rating:
Oxygen Rating Index:
LY56
Lead Frame Material:
56-Lead QFN
Sumitomo EME G700
V-O per UL94
N/A
Copper
Lead Finish, Composition / Thickness:
Pure Sn (100%)
Die Backside Preparation
Method/Metallization:
Backgrind
Die Separation Method:
Sawing 100%
Die Attach Supplier:
Ablestik
Die Attach Material:
8290
Die Attach Method:
Epoxy
Bond Diagram Designation:
10-06566
Wire Bond Method:
Thermosonic
Wire Material/Size:
Au, 1.0mil
Thermal Resistance Theta JA °C/W:
23°C/W
Package Cross Section Yes/No:
N/A
Assembly Process Flow:
49-10994
Name/Location of Assembly (prime) facility:
Amkor Seoul-Korea (SEOUL-L)
MSL Level
1
Reflow Profile
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
CML-R
Note: Please contact a Cypress Representative for other package availability.
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Page 4 of 12
Document No. 001-81645 Rev. *C
ECN #: 4572415
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS
Stress/Test
Test Condition (Temp/Bias)
High Temperature Operating Life
Dynamic Operating Condition, Vcc Max=5.5V, 125C
Early Failure Rate (EFR)
JESD22-A108
High Temperature Operating Life
Dynamic Operating Condition, Vcc Max=5.5V, 125C
Latent Failure Rate (LFR)
JESD22-A108
Temperature Cycle
MIL-STD-883, Method 1010, Condition C, -65°C to 150°C
Precondition: JESD22 Moisture Sensitivity Level 1
Result
P/F
P
P
P
168 Hrs, 85C/85%RH+ Reflow, 260C+0, -5C
High Accelerated Stress Test
(HAST)
130C, 5.25V, 85%RH, JESD22-A110
Precondition: JESD22 Moisture Sensitivity Level 1
P
168 Hrs, 85C/85%RH+ Reflow, 260C+0, -5C
High Temperature Steady State life
125C, 5.5V, Vcc Max
P
JESD22-A108
Low Temperature Operating Life
-30C, 5.5V, 8MHZ
P
JESD22-A108
Pressure Cooker
121C, 100%RH, 15Psig, JESD22-A102
Precondition: JESD22 Moisture Sensitivity Level 1
P
168 Hrs, 85C/85%RH+ Reflow, 260C+0, -5C
Aged Bond Strength
200C, 4hrs
MIL-STD-883, Method 2011
P
Data Retention
150°C ± 5°C No Bias
P
JESD22-A117 and JESD22-A103
Electrostatic Discharge
Human Body Model (ESD-HBM)
2,200V, JESD22-A114
P
Electrostatic Discharge
2,200V
P
Human Body Model (ESD-HBM)
MIL-STD-883, Method 3015.7
Electrostatic Discharge
500V, JESD22-C101
P
Endurance Test
MIL-STD-883, Method 883-1033
P
Acoustic Microscopy
J-STD-020
P
Charge Device Model (ESD-CDM)
JESD22-A117 and JESD22-A103
Dynamic Latch-up
125C, 6.9V, JESD78
P
Static Latch-up
125C,  300mA, JESD78
P
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Page 5 of 12
Document No. 001-81645 Rev. *C
ECN #: 4572415
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
High Temperature Operating Life
1
Early Failure Rate
1, 2
High Temperature Operating Life
Long Term Failure Rate
1
2
3
Device Tested/
Device Hours
#
Fails
Activation
Energy
Thermal
AF3
Failure Rate
1,029 Devices
0
N/A
N/A
0 ppm
528,750 DHRs
0
0.7
55
31 FIT
Assuming an ambient temperature of 55C and a junction temperature rise of 15C.
Chi-squared 60% estimations used to calculate the failure rate.
Thermal Acceleration Factor is calculated from the Arrhenius equation
E  1 1  
AF = exp  A  -  
 k  T 2 T1  
where:
EA =The Activation Energy of the defect mechanism.
-5
K = Boltzmann’s constant = 8.62x10 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature of the
device at use condition
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Page 6 of 12
Document No. 001-81645 Rev. *C
ECN #: 4572415
Reliability Test Data
QTP #: 052004
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: ACOUSTIC, MSL1
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
COMP
15
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
COMP
15
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
COMP
15
0
STRESS: AGE BOND STRENGTH
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
COMP
10
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
COMP
10
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
COMP
10
0
STRESS: DATA RETENTION, PLASTIC, 150C
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
500
256
0
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
1000
256
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
500
256
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
1000
254
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
500
252
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
1000
252
0
4516647
610521157
TAIWN-T
COMP
45
0
STRESS: ENDURANCE
CY8C21534 (8C21534A)
STRESS: ESD-CHARGE DEVICE MODEL, (500V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
COMP
9
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWN-T
COMP
9
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWN-T
COMP
9
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (2,200V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
COMP
9
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWN-T
COMP
9
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWN-T
COMP
9
0
STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
COMP
3
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWN-T
COMP
3
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWN-T
COMP
3
0
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Page 7 of 12
Document No. 001-81645 Rev. *C
ECN #: 4572415
Reliability Test Data
QTP #: 052004
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
120
1002
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
120
1002
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
120
1002
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
750
235
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWN-T
750
235
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWN-T
750
235
0
STRESS: HIGH TEMP STEADY STATE LIFE TEST (125C, 5.5V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
168
76
0
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
336
76
0
STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 168 HR 85C/85%RH (MSL1)
CY8C21234 (8C21234A)
4516647
610527569
PHIL-M
128
49
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
128
44
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
128
44
0
500
45
0
STRESS: LOW TEMPERATURE OPERATING LIFE (-30C, 5.5V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 168 HR 85C/85%RH (MSL1)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
168
45
0
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
336
45
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
168
45
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
336
45
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
168
45
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
336
45
0
STRESS: STATIC LATCH-UP TESTING (125C, 11V, 300mA)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
COMP
3
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWN-T
COMP
3
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWN-T
COMP
3
0
610521157
TAIWN-T
COMP
3
0
STRESS: DYNAMIC LATCH-UP (8.3V)
CY8C21534 (8C21534A)
4516647
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Page 8 of 12
Document No. 001-81645 Rev. *C
ECN #: 4572415
Reliability Test Data
QTP #: 052004
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH (MSL1)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
300
50
0
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
500
50
0
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
1000
50
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
300
45
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
1000
45
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
300
45
0
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Page 9 of 12
Document No. 001-81645 Rev. *C
ECN #: 4572415
Reliability Test Data
QTP #: 053603
Device
STRESS:
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max
CY8C24494 (8C24494A)
4529648
610537024
TAIWN-T
96
1029
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.5V, Vcc Max
CY8C24494 (8C24494A)
STRESS:
4529648
610537024
TAIWN-T
1024
177
0
TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH (MSL1)
CY8C24494 (8C24494A)
4529648
610537024
TAIWN-T
500
44
0
CY8C24494 (8C24494A)
4529648
610537024
TAIWN-T
1000
44
0
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Page 10 of 12
Document No. 001-81645 Rev. *C
ECN #: 4572415
Reliability Test Data
QTP #: 073706
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: SORT YIELD
CY8C24494 (8C24494A)
STRESS:
4730443
COMP
COMPARABLE
DATA RETENTION, PLASTIC, 150C
CY8C24494 (8C24494A)
4730443
610757002
TWN-T
500
43
0
CY8C24494 (8C24494A)
4730443
610757002
TWN-T
1000
43
0
CY8C24494 (8C24494A)
4730443
610757003
TWN-T
500
42
0
CY8C24494 (8C24494A)
4730443
610757003
TWN-T
1000
42
0
CY8C24494 (8C24494A)
4730443
610760988
TWN-T
500
80
0
CY8C24494 (8C24494A)
4730443
610760988
TWN-T
1000
80
0
CY8C24494 (8C24494A)
4730443
610757002
TWN-T
COMP
40
0
CY8C24494 (8C24494A)
4730443
610757003
TWN-T
COMP
44
0
CY8C24494 (8C24494A)
4730443
610760988
TWN-T
COMP
79
0
STRESS:
STRESS:
ENDURANCE
ETEST YIELD
CY8C24494 (8C24494A)
4730443
COMP
COMPARABLE
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Page 11 of 12
Document No. 001-81645 Rev. *C
ECN #: 4572415
Document History Page
Document Title:
Document Number:
QTP 063105: ENCORE III DEVICE FAMILY S4AD-5 TECHNOLOGY, FAB 4
001-81645
Rev. ECN
Orig. of
No.
Change
**
3695017 NSR
*A
4105599 JYF
*B
4490321 JYF
*C
4572415 RT
Description of Change
Initial Spec Release.
Revision from the original qual report released in memo HGA-512:
- Updated the QTP#063105 Version 1.1 to Version 2.0
- Added device CY7C64225 in the title page.
- Changed the contact Reliability Engineer to Rene Rodgers.
- Changed the product division from CCD to DCD.
- Removed the Overall Die (or Mask) REV Level and What ID markings
on Die information in the Product Description table to align with the
current spec format.
- Replaced the reference Cypress standards with the industry
standards on the reliability tests performed table.
Sunset Spec Review:
Deleted Version 2.0 in QTP title page;
Complete re-write of Reliability Tests Performed Table to align with
current spec template.
Sunset Review:
Updated QTP title page for template alignment.
Updated to include all of the QTP 053603 qual report data. (Spec 00188087). Revised product qualification history table to include history
changes from QTP 53603.
Distribution: WEB
Posting:
None
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Page 12 of 12