Document No.001-88100 Rev. *A ECN # 4419050 Cypress Semiconductor Product Qualification Report QTP# 072103 VERSION*A June, 2014 TX3LP18 USB 2.0 C8Q-3R Technology, Fab 4 CY7C68003 MoBL-USBTM ULPI Transceiver FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Josephine Pineda Reliability Engineer Reviewed By: Rene Rodgers Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 13 Document No.001-88100 Rev. *A ECN # 4419050 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 033805 FX2LP/FX1/AT2LP New Device family on New C8Q-3R Technology, Fab4 Jan 05 072103 TX3LP18 Device Family on C8Q-3R Technology, Fab4 Nov 07 081205 Device Qualification MoBL™ USB TX3LP (CY7C68003) 3-layer mask change in Fab 4 C8QN-3RL Oct 08 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 13 Document No.001-88100 Rev. *A ECN # 4419050 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: New Device MoBL-USB TX3LP18 (CY7C68003) in C8QN-3R Technology, Fab4 Marketing Part #: CY7C68003 Device Description: 1.8V, Commercial and Industrial Cypress Division: Cypress Semiconductor Corporation – Data Communication Division (DCD) TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 4 Passivation Type and Materials: Metal Metal 1: 150Å Ti / 3,200Å Al 0.5% Cu Composition: Metal 2: 150Å Ti / 4,000Å Al 0.5% Cu Metal 3: 150Å Ti / 4,000Å Al 0.5% Cu Metal 4: 150Å Ti / 8,000Å Al 0.5% Cu 1,000Å TeOs / 9,000 Å Si3N4 Generic Process Technology/Design Rule (µ-drawn): CMOS, 0.13 µm Gate Oxide Material/Thickness (MOS): SiO2 DGOX 32/55 Å Name/Location of Die Fab (prime) Facility: CMI/Bloomington MN Die Fab Line ID/Wafer Process ID: Fab4, C8Q-3R / / / / 300Å TiW 300Å TiW 300Å TiW 300Å TiW PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY 24 QFN PHIL-M, CML-RA, TAIWAN-G 20 WLCSP Amkor – Taiwan (AU) Note: Package Qualification details upon request. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 13 Document No.001-88100 Rev. *A ECN # 4419050 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: LQ24 / FN20 24 Quad Fat No-Lead (4x4x0.6mm) 20 Wafer-Level-Chip-Scale-Package (66.45x81.20mils) EME-G770H V-0 per UL94 Oxygen Rating Index: 28% Lead Frame Material: Copper Lead Finish, Composition / Thickness: NiPdAu-Ag Die Backside Preparation Method/Metallization: Die Separation Method: Backgrind Die Attach Supplier/Material: Sumitomo CRM1064L Die Attach Method: Epoxy Wire Bond Method: Thermosonic Wire Material/Size: Au 0.8 mil Thermal Resistance Theta JA °C/W: 22.98 Package Cross Section Yes/No: N/A Name/Location of Assembly (prime) facility: AIT-Indonesia (AT) / Amkor Taiwan MSL Level 3 Reflow Profile 260C Package Designation: Package Outline, Type, or Name: Saw ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-RA, KYEC-TAIWAN , Amkor-AU Fault Coverage: 100% Note: Please contact a Cypress Representative for other packages availability Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 13 Document No.001-88100 Rev. *A ECN # 4419050 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate Low Temperature Operating Life High Temperature Steady State life High Temp Storage High Accelerated Saturation Test (HAST) Temperature Cycle Test Condition (Temp/Bias) Dynamic Operating Condition, Vcc Max=2.35V, 125°C Dynamic Operating Condition, Vcc Max=3.8V, 125°C Dynamic Operating Condition, Vcc Max=2.07V,150°C JESD22-A108 Dynamic Operating Condition, Vcc Max=3.8V, 125°C Dynamic Operating Condition, Vcc Max=2.07V,150°C JESD22-A108 Dynamic Operating Condition, Vcc=4.3V,-30°C JESD22-A108 Static Operating Condition, Vcc Max =3.63V,150°C JESD22-A108 JESD22-A103:150 C, no bias JEDEC STD 22-A110: 130°C, 1.8V/3.63V, 85%RH Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30°C, 60% RH, 260C Reflow) Result P/F P P P P P P Electrostatic Discharge Human Body Model (ESD-HBM) MIL-STD-883, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30°C, 60% RH, 260C Reflow) JESD22-A102, 121°C, 100%RH, 15 PSIG Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30°C, 60% RH, 260C Reflow) 1,100V MIL- STD-883, Method 3015.7 Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V 2,200V 3,300V JEDEC EIA/JESD22-A114 P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V, 1000V, 1250V JESD22-C101 P Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Ball Shear JESD22-B116 P Acoustic Microscopy P Dynamic Latchup Sensitivity J-STD-020 Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30°C, 60% RH, 260C Reflow) In accordance with JESD78 Latchup Sensitivity 125C, ± 300mA, ± 240mA, ± 200mA, Pressure Cooker In accordance with JEDEC 17 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 13 P P P P P Document No.001-88100 Rev. *A ECN # 4419050 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate1 High Temperature Operating Life1,2 Long Term Failure Rate 1 2 3 Device Tested/ Device Hours # Fails Activation Energy Thermal3 A.F 1004 0 N/A N/A 0 PPM 1,089,160 DHRs 0 0 .7 55 15 FITs Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate.. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 13 Failure Rate Document No.001-88100 Rev. *A ECN # 4419050 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # Assy Loc 033805 Duration Samp Rej ACOUSTIC-MSL3 CY68013A (7C681000A) 4416666 610434406 TAIWN-G COMP 17 0 CY2SSTU877 (7C87741A) 4416666B H20592 TAIWN-G COMP 16 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G COMP 17 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 16 0 STRESS: Failure Mechanism AGE BOND STRENGTH CY68013A (7C681000A) 4416666 610434406 TAIWN-G COMP 5 0 CY68013A (7C682001A) 4416701 610437657 TAIWN-G COMP 5 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 3 0 4416701 610437657 TAIWN-G COMP 5 0 TAIWN-G COMP 3 0 STRESS: BALL SHEAR CY68013A (7C682001A) STRESS: DYNAMIC LATCH-UP TESTING (6.9V) CY68013A (7C682001A) STRESS: 4416701 610437657 ESD-CHARGE DEVICE MODEL (500V) CY68013A (7C682001A) 4416666 610437607 TAIWN-G COMP 9 0 CY68013A (7C682000A) 4416666 610437102 TAIWN-G COMP 9 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G COMP 9 0 CY68013A (7C682000A) 4416701 610437702 TAIWN-G COMP 9 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V CY68013A (7C682001A) 4416666 610437607 TAIWN-G COMP 9 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G COMP 9 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G COMP 9 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY68013A (7C682001A) 4416666 610437607 TAIWN-G COMP 3 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G COMP 3 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G COMP 3 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 13 Document No.001-88100 Rev. *A ECN # 4419050 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # Assy Loc 033805 Duration Samp Rej HIGH TEMP STEADY STATE LIFE TEST (150C, 3.63V) CY68013A (7C682005A) 4416701 610438121 TAIWN-G 80 80 0 CY68013A (7C682005A) 4416701 610438121 TAIWN-G 168 80 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 3.8V, Vcc Max) CY68013A (7C682001A) 4416666 610437607 TAIWN-G 96 499 0 CY68013A (7C682005A) 4417143 610443845 TAIWN-G 96 514 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.8V, Vcc Max) CY68013A (7C682001A) 4416666 610437607 TAIWN-G 168 200 0 CY68013A (7C682001A) 4416666 610437607 TAIWN-G 1000 194 0 CY68013A (7C682005A) 4417143 610443845 TAIWN-G 168 208 0 CY68013A (7C682005A) 4417143 610443845 TAIWN-G 1000 208 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 2.35V, Vcc Max) CY2SSTU877 (7C87741A) 4416666B H20592 TAIWN-G 96 276 0 CY2SSTU877 (7C82877A) 4416701 H20501 TAIWN-G 96 126 0 CY2SSTU877 (7C87741A) 4416701 H20500 TAIWN-G 96 89 0 CY2SSTU877 (7C87740A) 4416791B H20536 TAIWN-G 96 169 0 CY2SSTU877 (7C87741A) 4417975 H20583 TAIWN-G 96 304 0 CY2SSTU877 (7C87741A) 4419587 H20650 TAIWN-G 96 500 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.8V, Vcc Max) CY2SSTU877 (7C87741A) 4416666B H20592 TAIWN-G 1000 253 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 168 150 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 1000 150 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 3.63V), PRE COND 192 HR, 30C/60%RH, MSL3 CY68013A (7C682001A) 4416666 610437607 TAIWN-G 128 47 0 CY68013A (7C682001A) 4416666 610437607 TAIWN-G 256 47 0 CY68013A (7C682000A) 4416701 610437702 TAIWN-G 128 47 0 CY68013A (7C682000A) 4416701 610437702 TAIWN-G 256 45 0 STRESS: Failure Mechanism HI-ACCEL SATURATION TEST (130C, 85%RH, 1.8V), PRE COND 192 HR, 30C/60%RH, MSL3 CY2SSTU877 (7C87741A) 4417975 H20583 TAIWN-G 128 43 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 13 Document No.001-88100 Rev. *A ECN # 4419050 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # Assy Loc 033805 Duration Samp Rej Failure Mechanism LOW TEMPERATURE OPERATING LIFE (-30C, 4.3V) CY68013A (7C682005A) 4416701 610438121 TAIWN-G 500 80 0 STRESS: HIGH TEMPERATURE STORAGE, 150C, no bias CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G 500 50 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G 1000 50 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 500 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 1000 45 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE COND 192 HR, 30C/60%RH, MSL3 CY68013A (7C681000A) 4416666 610434406 TAIWN-G 168 50 0 CY68013A (7C681000A) 4416666 610434406 TAIWN-G 288 50 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G 168 50 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G 288 50 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 168 47 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 288 47 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 168 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 288 45 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS, 30C/60%RH, MSL3 CY68013A (7C681000A) 4416666 610434406 TAIWN-G 300 50 0 CY68013A (7C681000A) 4416666 610434406 TAIWN-G 500 50 0 CY68013A (7C681000A) 4416666 610434406 TAIWN-G 1000 50 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G 168 50 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G 500 50 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G 1000 50 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 300 46 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 500 45 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 1000 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 300 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 500 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 1000 45 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 13 Document No.001-88100 Rev. *A ECN # 4419050 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # Assy Loc 033805 Duration Samp Rej STATIC LATCH-UP TESTING (125C, 5.5V, ±300mA) CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G COMP 3 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 3 0 COMP 3 0 COMP 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 6.5V, ±300mA) CY68013A (7C682001A) STRESS: Failure Mechanism 4416666 610437607 TAIWN-G STATIC LATCH-UP TESTING (125C, 7.5V, ±300mA) CY68013A (7C682001A) 4416701 610437657 TAIWN-G Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 13 Document No.001-88100 Rev. *A ECN # 4419050 Reliability Test Data QTP #: Device STRESS: Fab Lot # Samp Rej Failure Mechanism 4723068 610742249 INDS-AT COMP 6 0 4723068 610742249 INDS-AT COMP 8 0 INDS-AT COMP 9 0 77 0 ESD-CHARGE DEVICE MODEL (500V) CY7C68003 (7C68330A) STRESS: Duration ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-E, 2,200V CY7C68003 (7C68330A) STRESS: Assy Loc STATIC LATCH-UP TESTING (125C, 3.0V/5.4V, ±200mA) CY7C68003 (7C68330A) STRESS: Assy Lot # 072103 4723068 610742249 TC COND. C -65C TO 150C, PRE COND 192 HRS, 30C/60%RH, MSL3 CY7C68003 (7C68330A) 4723068 610742249 INDS-AT 500 STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE COND 192 HR, 30C/60%RH, MSL3 CY7C68003 (7C68330A) STRESS: 610742249 INDS-AT 168 76 0 HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 2.07V, Vcc Max) CY7C68003 (7C68330A) STRESS: 4723068 4725549 610755172/N INDS-AT 48 1004 0 HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.07V, Vcc Max) CY7C68003 (7C68330A) 4725549 610755172/N INDS-AT 512 185 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 13 Document No.001-88100 Rev. *A ECN # 4419050 Reliability Test Data QTP #: Device STRESS: Fab Lot # 610821083 INDS-AT COMP 6 0 48004685 610821083 INDS-AT COMP 6 0 48004685 610821083 INDS-AT 3 0 8 0 COMP 48004685 610821083 INDS-AT COMP 48004685 610821083 INDS-AT COMP 3 0 48004685 610821083 INDS-AT COMP 9 0 INDS-AT COMP 3 0 INDS-AT COMP 3 0 ESD-CHARGE DEVICE MODEL (1000V) CY7C68003 (7C68330) STRESS: 48004685 ESD-CHARGE DEVICE MODEL (500V) CY7C68003 (7C68330) STRESS: Failure Mechanism ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-E, 3,300V CY7C68003 (7C68330) STRESS: Rej ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-E, 2,200V CY7C68003 (7C68330) STRESS: Samp ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-E, 1,100V CY7C68003 (7C68330) STRESS: Duration STATIC LATCH-UP TESTING (125C, 3.42V, ±240mA) CY7C68003 (7C68330) STRESS: Assy Loc STATIC LATCH-UP TESTING (125C, 2.85V, ±200mA) CY7C68003 (7C68330) STRESS: Assy Lot # 081205 48004685 610821083 ESD-CHARGE DEVICE MODEL (1250V) CY7C68003 (7C68330) 48004685 610821083 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 13 Document No.001-88100 Rev. *A ECN # 4419050 Document History Page Document Title: Document Number: QTP # 072103 : TX3LP18 USB 2.0 (CY7C68003) C8Q-3R Technology, Fab 4 001-88100 Rev. ECN Orig. of No. Change ** 4039235 ILZ *A 4419050 JYF Description of Change Initial Spec Release Qualification report published on Cypress.com is documented on memo HGA-643 and not in spec format. Initiated spec for QTP 072103 and all data from memo# HGA-643 was transferred to qualification report spec template. Deleted package qualification details on package qualification history table. Deleted Cypress reference Spec and replaced with Industry Standards Updated package availability based on current qualified test & assembly site. Sunset review: Updated QTP title page and Reliability Tests Performed table (EFR/LFR, LTOL, HTSSL, HTS, HAST, TCT, PCT, ESD-HBM, Acoustic Microscopy) for template alignment. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 13