QTP # 072103 :TX3LP18 USB 2.0 (CY7C68003) C8Q-3R TECHNOLOGY, FAB 4

Document No.001-88100 Rev. *A
ECN # 4419050
Cypress Semiconductor
Product Qualification Report
QTP# 072103 VERSION*A
June, 2014
TX3LP18 USB 2.0
C8Q-3R Technology, Fab 4
CY7C68003
MoBL-USBTM ULPI Transceiver
FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT
[email protected] or via a CYLINK CRM CASE
Prepared By:
Josephine Pineda
Reliability Engineer
Reviewed By:
Rene Rodgers
Reliability Manager
Approved By:
Richard Oshiro
Reliability Director
Company Confidential
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Page 1 of 13
Document No.001-88100 Rev. *A
ECN # 4419050
PRODUCT QUALIFICATION HISTORY
Qual
Report
Description of Qualification Purpose
Date
Comp
033805
FX2LP/FX1/AT2LP New Device family on New C8Q-3R Technology, Fab4
Jan 05
072103
TX3LP18 Device Family on C8Q-3R Technology, Fab4
Nov 07
081205
Device Qualification MoBL™ USB TX3LP (CY7C68003) 3-layer mask change in Fab 4
C8QN-3RL
Oct 08
Company Confidential
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Page 2 of 13
Document No.001-88100 Rev. *A
ECN # 4419050
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: New Device MoBL-USB TX3LP18 (CY7C68003) in C8QN-3R Technology, Fab4
Marketing Part #:
CY7C68003
Device Description:
1.8V, Commercial and Industrial
Cypress Division:
Cypress Semiconductor Corporation – Data Communication Division (DCD)
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number of Metal Layers:
4
Passivation Type and Materials:
Metal
Metal 1: 150Å Ti / 3,200Å Al 0.5% Cu
Composition: Metal 2: 150Å Ti / 4,000Å Al 0.5% Cu
Metal 3: 150Å Ti / 4,000Å Al 0.5% Cu
Metal 4: 150Å Ti / 8,000Å Al 0.5% Cu
1,000Å TeOs / 9,000 Å Si3N4
Generic Process Technology/Design Rule (µ-drawn):
CMOS, 0.13 µm
Gate Oxide Material/Thickness (MOS):
SiO2 DGOX 32/55 Å
Name/Location of Die Fab (prime) Facility:
CMI/Bloomington MN
Die Fab Line ID/Wafer Process ID:
Fab4, C8Q-3R
/
/
/
/
300Å TiW
300Å TiW
300Å TiW
300Å TiW
PACKAGE AVAILABILITY
PACKAGE
ASSEMBLY SITE FACILITY
24 QFN
PHIL-M, CML-RA, TAIWAN-G
20 WLCSP
Amkor – Taiwan (AU)
Note: Package Qualification details upon request.
Company Confidential
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Page 3 of 13
Document No.001-88100 Rev. *A
ECN # 4419050
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Mold Compound Name/Manufacturer:
Mold Compound Flammability Rating:
LQ24 / FN20
24 Quad Fat No-Lead (4x4x0.6mm)
20 Wafer-Level-Chip-Scale-Package (66.45x81.20mils)
EME-G770H
V-0 per UL94
Oxygen Rating Index:
28%
Lead Frame Material:
Copper
Lead Finish, Composition / Thickness:
NiPdAu-Ag
Die Backside Preparation
Method/Metallization:
Die Separation Method:
Backgrind
Die Attach Supplier/Material:
Sumitomo CRM1064L
Die Attach Method:
Epoxy
Wire Bond Method:
Thermosonic
Wire Material/Size:
Au 0.8 mil
Thermal Resistance Theta JA °C/W:
22.98
Package Cross Section Yes/No:
N/A
Name/Location of Assembly (prime) facility:
AIT-Indonesia (AT) / Amkor Taiwan
MSL Level
3
Reflow Profile
260C
Package Designation:
Package Outline, Type, or Name:
Saw
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
CML-RA, KYEC-TAIWAN , Amkor-AU
Fault Coverage:
100%
Note: Please contact a Cypress Representative for other packages availability
Company Confidential
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Page 4 of 13
Document No.001-88100 Rev. *A
ECN # 4419050
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT
Stress/Test
High Temperature Operating Life
Early Failure Rate
High Temperature Operating Life
Latent Failure Rate
Low Temperature Operating Life
High Temperature Steady State life
High Temp Storage
High Accelerated Saturation Test
(HAST)
Temperature Cycle
Test Condition
(Temp/Bias)
Dynamic Operating Condition, Vcc Max=2.35V, 125°C
Dynamic Operating Condition, Vcc Max=3.8V, 125°C
Dynamic Operating Condition, Vcc Max=2.07V,150°C
JESD22-A108
Dynamic Operating Condition, Vcc Max=3.8V, 125°C
Dynamic Operating Condition, Vcc Max=2.07V,150°C
JESD22-A108
Dynamic Operating Condition, Vcc=4.3V,-30°C
JESD22-A108
Static Operating Condition, Vcc Max =3.63V,150°C
JESD22-A108
JESD22-A103:150 C, no bias
JEDEC STD 22-A110: 130°C, 1.8V/3.63V, 85%RH
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30°C, 60% RH, 260C Reflow)
Result
P/F
P
P
P
P
P
P
Electrostatic Discharge
Human Body Model (ESD-HBM)
MIL-STD-883, Method 1010, Condition C, -65°C to 150°C
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30°C, 60% RH, 260C Reflow)
JESD22-A102, 121°C, 100%RH, 15 PSIG
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30°C, 60% RH, 260C Reflow)
1,100V
MIL- STD-883, Method 3015.7
Electrostatic Discharge
Human Body Model (ESD-HBM)
2,200V 2,200V 3,300V
JEDEC EIA/JESD22-A114
P
Electrostatic Discharge
Charge Device Model (ESD-CDM)
500V, 1000V, 1250V
JESD22-C101
P
Age Bond Strength
200C, 4hrs
MIL-STD-883, Method 883-2011
P
Ball Shear
JESD22-B116
P
Acoustic Microscopy
P
Dynamic Latchup Sensitivity
J-STD-020
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30°C, 60% RH, 260C Reflow)
In accordance with JESD78
Latchup Sensitivity
125C, ± 300mA, ± 240mA, ± 200mA,
Pressure Cooker
In accordance with JEDEC 17
Company Confidential
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Page 5 of 13
P
P
P
P
P
Document No.001-88100 Rev. *A
ECN # 4419050
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
High Temperature Operating Life
Early Failure Rate1
High Temperature Operating Life1,2
Long Term Failure Rate
1
2
3
Device Tested/
Device Hours
#
Fails
Activation
Energy
Thermal3
A.F
1004
0
N/A
N/A
0 PPM
1,089,160 DHRs
0
0 .7
55
15 FITs
Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C.
Chi-squared 60% estimations used to calculate the failure rate..
Thermal Acceleration Factor is calculated from the Arrhenius equation
E  1 1  
AF = exp  A  -  
 k  T 2 T1  
where:
EA =The Activation Energy of the defect mechanism.
k = Boltzmann's constant = 8.62x10-5 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction
temperature of the device at use conditions
Company Confidential
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Page 6 of 13
Failure
Rate
Document No.001-88100 Rev. *A
ECN # 4419050
Reliability Test Data
QTP #:
Device
STRESS:
Fab Lot #
Assy Lot #
Assy Loc
033805
Duration
Samp
Rej
ACOUSTIC-MSL3
CY68013A (7C681000A)
4416666
610434406
TAIWN-G
COMP
17
0
CY2SSTU877 (7C87741A)
4416666B
H20592
TAIWN-G
COMP
16
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
COMP
17
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
COMP
16
0
STRESS:
Failure Mechanism
AGE BOND STRENGTH
CY68013A (7C681000A)
4416666
610434406
TAIWN-G
COMP
5
0
CY68013A (7C682001A)
4416701
610437657
TAIWN-G
COMP
5
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
COMP
3
0
4416701
610437657
TAIWN-G
COMP
5
0
TAIWN-G
COMP
3
0
STRESS: BALL SHEAR
CY68013A (7C682001A)
STRESS:
DYNAMIC LATCH-UP TESTING (6.9V)
CY68013A (7C682001A)
STRESS:
4416701
610437657
ESD-CHARGE DEVICE MODEL (500V)
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
COMP
9
0
CY68013A (7C682000A)
4416666
610437102
TAIWN-G
COMP
9
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
COMP
9
0
CY68013A (7C682000A)
4416701
610437702
TAIWN-G
COMP
9
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
COMP
9
0
STRESS:
ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
COMP
9
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
COMP
9
0
CY2SSTU877 (7C82877A)
4413035
H19747
TAIWN-G
COMP
9
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
COMP
9
0
STRESS:
ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
COMP
3
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
COMP
3
0
CY2SSTU877 (7C82877A)
4413035
H19747
TAIWN-G
COMP
3
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
COMP
3
0
Company Confidential
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Page 7 of 13
Document No.001-88100 Rev. *A
ECN # 4419050
Reliability Test Data
QTP #:
Device
STRESS:
Fab Lot #
Assy Lot #
Assy Loc
033805
Duration
Samp
Rej
HIGH TEMP STEADY STATE LIFE TEST (150C, 3.63V)
CY68013A (7C682005A)
4416701
610438121
TAIWN-G
80
80
0
CY68013A (7C682005A)
4416701
610438121
TAIWN-G
168
80
0
STRESS:
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 3.8V, Vcc Max)
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
96
499
0
CY68013A (7C682005A)
4417143
610443845
TAIWN-G
96
514
0
STRESS:
HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.8V, Vcc Max)
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
168
200
0
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
1000
194
0
CY68013A (7C682005A)
4417143
610443845
TAIWN-G
168
208
0
CY68013A (7C682005A)
4417143
610443845
TAIWN-G
1000
208
0
STRESS:
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 2.35V, Vcc Max)
CY2SSTU877 (7C87741A)
4416666B
H20592
TAIWN-G
96
276
0
CY2SSTU877 (7C82877A)
4416701
H20501
TAIWN-G
96
126
0
CY2SSTU877 (7C87741A)
4416701
H20500
TAIWN-G
96
89
0
CY2SSTU877 (7C87740A)
4416791B
H20536
TAIWN-G
96
169
0
CY2SSTU877 (7C87741A)
4417975
H20583
TAIWN-G
96
304
0
CY2SSTU877 (7C87741A)
4419587
H20650
TAIWN-G
96
500
0
STRESS:
HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.8V, Vcc Max)
CY2SSTU877 (7C87741A)
4416666B
H20592
TAIWN-G
1000
253
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
168
150
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
1000
150
0
STRESS:
HI-ACCEL SATURATION TEST (130C, 85%RH, 3.63V), PRE COND 192 HR, 30C/60%RH, MSL3
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
128
47
0
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
256
47
0
CY68013A (7C682000A)
4416701
610437702
TAIWN-G
128
47
0
CY68013A (7C682000A)
4416701
610437702
TAIWN-G
256
45
0
STRESS:
Failure Mechanism
HI-ACCEL SATURATION TEST (130C, 85%RH, 1.8V), PRE COND 192 HR, 30C/60%RH, MSL3
CY2SSTU877 (7C87741A)
4417975
H20583
TAIWN-G
128
43
0
Company Confidential
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Page 8 of 13
Document No.001-88100 Rev. *A
ECN # 4419050
Reliability Test Data
QTP #:
Device
STRESS:
Fab Lot #
Assy Lot #
Assy Loc
033805
Duration
Samp
Rej
Failure Mechanism
LOW TEMPERATURE OPERATING LIFE (-30C, 4.3V)
CY68013A (7C682005A)
4416701
610438121
TAIWN-G
500
80
0
STRESS: HIGH TEMPERATURE STORAGE, 150C, no bias
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
500
50
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
1000
50
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
500
45
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
1000
45
0
STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE COND 192 HR, 30C/60%RH, MSL3
CY68013A (7C681000A)
4416666
610434406
TAIWN-G
168
50
0
CY68013A (7C681000A)
4416666
610434406
TAIWN-G
288
50
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
168
50
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
288
50
0
CY2SSTU877 (7C82877A)
4413035
H19747
TAIWN-G
168
47
0
CY2SSTU877 (7C82877A)
4413035
H19747
TAIWN-G
288
47
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
168
45
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
288
45
0
STRESS:
TC COND. C -65C TO 150C, PRE COND 192 HRS, 30C/60%RH, MSL3
CY68013A (7C681000A)
4416666
610434406
TAIWN-G
300
50
0
CY68013A (7C681000A)
4416666
610434406
TAIWN-G
500
50
0
CY68013A (7C681000A)
4416666
610434406
TAIWN-G
1000
50
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
168
50
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
500
50
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
1000
50
0
CY2SSTU877 (7C82877A)
4413035
H19747
TAIWN-G
300
46
0
CY2SSTU877 (7C82877A)
4413035
H19747
TAIWN-G
500
45
0
CY2SSTU877 (7C82877A)
4413035
H19747
TAIWN-G
1000
45
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
300
45
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
500
45
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
1000
45
0
Company Confidential
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Page 9 of 13
Document No.001-88100 Rev. *A
ECN # 4419050
Reliability Test Data
QTP #:
Device
STRESS:
Fab Lot #
Assy Lot #
Assy Loc
033805
Duration
Samp
Rej
STATIC LATCH-UP TESTING (125C, 5.5V, ±300mA)
CY2SSTU877 (7C82877A)
4413035
H19747
TAIWN-G
COMP
3
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
COMP
3
0
COMP
3
0
COMP
3
0
STRESS:
STATIC LATCH-UP TESTING (125C, 6.5V, ±300mA)
CY68013A (7C682001A)
STRESS:
Failure Mechanism
4416666
610437607
TAIWN-G
STATIC LATCH-UP TESTING (125C, 7.5V, ±300mA)
CY68013A (7C682001A)
4416701
610437657
TAIWN-G
Company Confidential
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Page 10 of 13
Document No.001-88100 Rev. *A
ECN # 4419050
Reliability Test Data
QTP #:
Device
STRESS:
Fab Lot #
Samp
Rej
Failure Mechanism
4723068
610742249
INDS-AT
COMP
6
0
4723068
610742249
INDS-AT
COMP
8
0
INDS-AT
COMP
9
0
77
0
ESD-CHARGE DEVICE MODEL (500V)
CY7C68003 (7C68330A)
STRESS:
Duration
ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-E, 2,200V
CY7C68003 (7C68330A)
STRESS:
Assy Loc
STATIC LATCH-UP TESTING (125C, 3.0V/5.4V, ±200mA)
CY7C68003 (7C68330A)
STRESS:
Assy Lot #
072103
4723068
610742249
TC COND. C -65C TO 150C, PRE COND 192 HRS, 30C/60%RH, MSL3
CY7C68003 (7C68330A)
4723068
610742249
INDS-AT
500
STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE COND 192 HR, 30C/60%RH, MSL3
CY7C68003 (7C68330A)
STRESS:
610742249
INDS-AT
168
76
0
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 2.07V, Vcc Max)
CY7C68003 (7C68330A)
STRESS:
4723068
4725549
610755172/N
INDS-AT
48
1004
0
HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.07V, Vcc Max)
CY7C68003 (7C68330A)
4725549
610755172/N
INDS-AT
512
185
0
Company Confidential
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Page 11 of 13
Document No.001-88100 Rev. *A
ECN # 4419050
Reliability Test Data
QTP #:
Device
STRESS:
Fab Lot #
610821083
INDS-AT
COMP
6
0
48004685
610821083
INDS-AT
COMP
6
0
48004685
610821083
INDS-AT
3
0
8
0
COMP
48004685
610821083
INDS-AT
COMP
48004685
610821083
INDS-AT
COMP
3
0
48004685
610821083
INDS-AT
COMP
9
0
INDS-AT
COMP
3
0
INDS-AT
COMP
3
0
ESD-CHARGE DEVICE MODEL (1000V)
CY7C68003 (7C68330)
STRESS:
48004685
ESD-CHARGE DEVICE MODEL (500V)
CY7C68003 (7C68330)
STRESS:
Failure Mechanism
ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-E, 3,300V
CY7C68003 (7C68330)
STRESS:
Rej
ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-E, 2,200V
CY7C68003 (7C68330)
STRESS:
Samp
ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-E, 1,100V
CY7C68003 (7C68330)
STRESS:
Duration
STATIC LATCH-UP TESTING (125C, 3.42V, ±240mA)
CY7C68003 (7C68330)
STRESS:
Assy Loc
STATIC LATCH-UP TESTING (125C, 2.85V, ±200mA)
CY7C68003 (7C68330)
STRESS:
Assy Lot #
081205
48004685
610821083
ESD-CHARGE DEVICE MODEL (1250V)
CY7C68003 (7C68330)
48004685
610821083
Company Confidential
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Page 12 of 13
Document No.001-88100 Rev. *A
ECN # 4419050
Document History Page
Document Title:
Document Number:
QTP # 072103 : TX3LP18 USB 2.0 (CY7C68003) C8Q-3R Technology, Fab 4
001-88100
Rev. ECN
Orig. of
No.
Change
**
4039235 ILZ
*A
4419050 JYF
Description of Change
Initial Spec Release
Qualification report published on Cypress.com is documented on
memo HGA-643 and not in spec format.
Initiated spec for QTP 072103 and all data from memo# HGA-643
was transferred to qualification report spec template.
Deleted package qualification details on package qualification history
table.
Deleted Cypress reference Spec and replaced with Industry Standards
Updated package availability based on current qualified test &
assembly site.
Sunset review:
Updated QTP title page and Reliability Tests Performed table
(EFR/LFR, LTOL, HTSSL, HTS, HAST, TCT, PCT, ESD-HBM,
Acoustic Microscopy) for template alignment.
Distribution: WEB
Posting: None
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Page 13 of 13