SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” indicates halogen-free. DESCRIPTION SOT-363 The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the SMUN5311DW series, two complementary BRT devices are housed in the SOT−363 package which is ideal for low power surface mount applications where board space is at a premium. A E L B FEATURE Simplifies circuit design Reduces board space Reduces component count Available in 8 mm, 7 inch/3000 unit tape and reel The devices are Pb-Free 6 F 4 R1 REF. A B C D E F R2 Q1 R2 Millimeter Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10 1.20 1.40 0.15 0.35 H J K DG 5 Q2 C REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15 8° 0.650 TYP. R1 1 3 2 MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q 2, minus sign for Q1(PNP) omitted) SYMBOL VALUE UNIT Collector - Base Voltage PARAMETER VCBO 50 Vdc Collector - Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Currrent – Continuous ONE JUNCTION HEATED THERMAL CHARACTERISTICS Total Device Dissipation, TA=25°C PD Total Device Dissipation, Derate above 25°C Thermal Resistance, Junction to Ambient RθJA 187(1) 256(2) mW 1.5(1) 2.0(2) mW/°C 670(1) 490(2) °C/W BOTH JUNCTION HEATED THERMAL CHARACTERISTICS Total Device Dissipation, TA=25°C PD Total Device Dissipation, Derate above 25°C 250(1) 385(2) mW 2.0(1) 3.0(2) mW/°C Thermal Resistance, Junction to Ambient RθJA 493(1) 325(2) °C/W Thermal Resistance, Junction to Lead RθJL 188(1) 208(2) °C/W TJ,TSTG -55~150 °C Junction Temperature & Storage Temperature Note: 1. FR-4 @ minimum pad 2. FR-4 @ 1.0 x 1.0 inch pad 18-Dec-2009 Rev. A Page 1 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION - V IC=10µA, IE=0 OFF CHARACTERISTICS Collector-Base Breakdown Voltage V(BR)CBO 50 Collector-Emitter Breakdown Voltage - V(BR)CEO 50 - - V IC =2mA, IB = 0 Collector-Base Cutoff Voltage ICBO - - 100 nA VCB=50V, IE=0 Collector-Emitter Cutoff Current ICEO - - 500 nA VCE=50V, IB=0 SMUN5311DW - - 0.5 SMUN5312DW - - 0.2 SMUN5313DW - - 0.1 SMUN5314DW - - 0.2 SMUN5315DW - - 0.9 SMUN5316DW - - 1.9 - - 4.3 mA VEB=6V, IC=0 SMUN5331DW - - 2.3 SMUN5332DW - - 1.5 SMUN5333DW - - 0.18 SMUN5334DW - - 0.13 - - 0.2 Emitter-Base Cutoff Current SMUN5330DW IEBO SMUN5335DW ON CHARACTERISTICS 3 Collector-Emitter Saturation Voltage DC Current Gain SMUN5311DW - - 0.25 SMUN5312DW - - 0.25 SMUN5313DW - - 0.25 SMUN5314DW - - 0.25 SMUN5335DW - - 0.25 SMUN5330DW - - 0.25 - - 0.25 SMUN5315DW - - 0.25 SMUN5316DW - - 0.25 SMUN5332DW - - 0.25 SMUN5333DW - - 0.25 SMUN5331DW VCE(sat) SMUN5334DW - - 0.25 SMUN5311DW 35 60 - SMUN5312DW 60 100 - SMUN5313DW 80 140 - SMUN5314DW 80 140 - SMUN5315DW 160 350 - 160 350 - 3.0 5.0 - SMUN5331DW 8.0 15 - SMUN5332DW 15 30 - SMUN5333DW 80 200 - SMUN5334DW 80 150 - SMUN5335DW 80 140 - SMUN5316DW SMUN5330DW hFE IC=10mA, IB=0.3mA Vdc IC=10mA, IB=5mA IC=10mA, IB=1mA VCE=10V, IC=5mA Note: 3. Pulse test: pulse width <300 µS, duty cycle<2.0% 18-Dec-2009 Rev. A Page 2 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted)(Continued) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION ON CHARACTERISTICS 3 Output Voltage(On) Output Voltage(Off) Input Resistor Resistor Ratio SMUN5311DW - - 0.2 SMUN5312DW - - 0.2 SMUN5314DW - - 0.2 SMUN5315DW - - 0.2 SMUN5316DW - - 0.2 SMUN5330DW - - 0.2 - - 0.2 SMUN5332DW - - 0.2 SMUN5333DW - - 0.2 SMUN5334DW - - 0.2 SMUN5335DW - - 0.2 SMUN5313DW - - 0.2 SMUN5311DW 4.9 - - SMUN5312DW 4.9 - - SMUN5313DW 4.9 - - SMUN5314DW 4.9 - - SMUN5333DW 4.9 - - 4.9 - - 4.9 - - SMUN5330DW 4.9 - - SMUN5315DW 4.9 - - SMUN5316DW 4.9 - - SMUN5331DW 4.9 - - SMUN5332DW 4.9 - - SMUN5311DW 7.0 10 13 SMUN5312DW 15.4 22 28.6 SMUN5313DW 32.9 47 61.1 SMUN5314DW 7.0 10 13 SMUN5315DW 7.0 10 13 3.3 4.7 6.1 0.7 1.0 1.3 SMUN5331DW 1.5 2.2 2.9 SMUN5332DW 3.3 4.7 6.1 SMUN5333DW 3.3 4.7 6.1 SMUN5334DW 15.4 22 28.6 SMUN5335DW 1.54 2.2 2.86 SMUN5311DW 0.8 1.0 1.2 SMUN5312DW 0.8 1.0 1.2 SMUN5313DW 0.8 1.0 1.2 SMUN5314DW 0.17 0.21 0.25 SMUN5315DW - - - SMUN5316DW - - - SMUN5331DW SMUN5334DW SMUN5335DW SMUN5316DW SMUN5330DW SMUN5330DW VOL VOH R1 R1/R2 0.8 1.0 1.2 SMUN5331DW 0.8 1.0 1.2 SMUN5332DW 0.8 1.0 1.2 SMUN5333DW 0.055 0.1 0.185 SMUN5334DW 0.38 0.47 0.56 SMUN5335DW 0.038 0.047 0.056 Vdc VCC=5V, VB=2.5V, RL=1 KΩ VCC=5V, VB=3.5V, RL=1 KΩ VCC=5V, VB=0.5V, RL=1 KΩ Vdc VCC=5V, VB=0.05V, RL=1 KΩ VCC=5V, VB=0.25V, RL=1 KΩ KΩ Note: 3. Pulse test: pulse width <300 µS, duty cycle<2.0% 18-Dec-2009 Rev. A Page 3 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente DEVICE MARKING AND RESISTOR VALUES DEVICE MARKING R1(K) R2(K) DEVICE MARKING R1(K) R2(K) SMUN5311DW 11 10 10 SMUN5330DW 30 1.0 1.0 SMUN5312DW 12 22 22 SMUN5331DW 31 2.2 2.2 SMUN5313DW 13 47 47 SMUN5332DW 32 4.7 4.7 SMUN5314DW 14 10 47 SMUN5333DW 33 4.7 47 SMUN5315DW 15 10 SMUN5334DW 34 22 47 SMUN5316DW 16 4.7 SMUN5335DW 35 2.2 47 ∞ ∞ CHARACTERISTIC CURVES ALL SMUN5311DW SERIES DEVICES PD, POWER DISSIPATION (mW) 300 250 200 150 100 Rθ JA = 490°C/W 50 0 50 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve 18-Dec-2009 Rev. A Page 4 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente CHARACTERISTIC CURVES SMUN531 1DW NPN TRANSISTOR hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECT OR VOL TAGE (VOL TS) TYPICAL ELECTRICAL CHARACTERISTICS 1 1000 IC/I B = 10 TA = 25 -°C 25°C 0.1 75°C 0.01 0.001 0 20 40 IC, COLLECT OR CURRENT (mA) VCE = 10 V °C TA = 57 25°C -25°C 100 10 1 50 10 OR CURRENT (mA) IC, COLLECT Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 2 1 0 0 10 20 30 40 VOL (VOL TS) VR, REVERSE BIASTAGE 25°C 75°C f = 1 MHz IE = 0 V °C TA = 25 IC, COLLECT OR CURRENT(mA) ACIT ANCE (pF) Cob, CAP 4 3 100 50 TA = 25 -°C 10 1 0.1 0.01 VO = 5 V 0.001 0 1 2 5 6 7 3 4 Vin, INPUT TAGE VOL (VOL TS) 8 9 10 Figure 5. Output Current versus Input Voltage Figure 4. Output Capacitance 10 Vin, INPUT VOL TAGE (VOL TS) VO = 0.2 V TA = 25 -°C 25°C 75°C 1 0.1 0 10 20 30 40 IC, COLLECT OR CURRENT (mA) 50 Figure 6. Input Voltage versus Output Current 18-Dec-2009 Rev. A Page 5 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente CHARACTERISTIC CURVES SMUN5311DW PNP TRANSISTOR hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECT OR VOL TAGE (VOL TS) TYPICAL ELECTRICAL CHARACTERISTICS 1000 1 IC/I B = 10 TA = 25 -°C 25°C 0.1 75°C 0.010 30 40 20 IC, COLLECT OR CURRENT (mA) VCE = 10 V TA = 5° 7C 25°C 100 -25°C 10 1 50 10 IC, COLLECT OR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 100 25°C 75°C f = 1 MHz lE = 0 V TA = 25 °C IC, COLLECT OR CURRENT(mA) Cob, CAP ACIT ANCE (pF) 4 3 2 1 TA = 25 -°C 10 1 0.1 VO =5 V 0.01 0 0 100 50 10 20 30 40 VR, REVERSE BIASTAGE VOL (VOL TS) 0.0010 Figure 9. Output Capacitance 2 1 7 3 6 4 5 Vin, INPUT TAGE VOL (VOL TS) 8 9 10 Figure 10. Output Current versus Input Voltage 100 Vin, INPUT VOL TAGE (VOL TS) VO =0.2 V TA = 25 -°C 10 25°C 75°C 1 0.10 10 20 30 40 OR CURRENT (mA) IC, COLLECT 50 Figure 11. Input Voltage versus Output Current 18-Dec-2009 Rev. A Page 6 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente CHARACTERISTIC CURVES 1 IC/I B = 10 25°C TA = 25 -°C 0.1 75°C 0.01 0.001 0 40 20 SMUN5312DW NPN TRANSISTOR hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECT OR VOL TAGE (VOL TS) TYPICAL ELECTRICAL CHARACTERISTICS 1000 VCE = 10 V TA = 5° 7C 25°C -25°C 100 10 1 50 10 IC, COLLECT OR CURRENT (mA) OR CURRENT (mA) IC, COLLECT Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 100 f = 1 MHz IE = 0 V TA = 25 °C 2 1 IC, COLLECT OR CURRENT(mA) Cob, CAP ACIT ANCE (pF) 4 3 100 75°C 25°C TA = 25 -°C 10 1 0.1 0.01 VO = 5 V 0 0 50 10 20 30 40 VR, REVERSE BIASTAGE VOL (VOL TS) 0.001 0 Figure 14. Output Capacitance 2 4 6 VOL (VOL TS) Vin, INPUT TAGE 8 10 Figure 15. Output Current versus Input Voltage 100 Vin, INPUT VOL TAGE (VOL TS) VO = 0.2 V TA = 25 -°C 10 25°C 75°C 1 0.1 0 10 20 30 40 50 IC, COLLECT OR CURRENT (mA) Figure 16. Input Voltage versus Output Current 18-Dec-2009 Rev. A Page 7 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente CHARACTERISTIC CURVES 10 IC/I B = 10 1 SMUN5312DW PNP TRANSISTOR hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECT OR VOL TAGE (VOL TS) TYPICAL ELECTRICAL CHARACTERISTICS 25°C TA = 25 -°C 75°C 0.1 1000 VCE = 10 V °C TA = 57 25°C -25°C 100 10 0.01 0 40 20 50 10 1 IC, COLLECT OR CURRENT (mA) Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4 100 f = 1 MHz lE = 0 V TA = 25 °C 3 2 1 IC, COLLECT OR CURRENT(mA) Cob, CAP ACIT ANCE (pF) 100 IC, COLLECT OR CURRENT (mA) 25°C 75°C TA = 25 -°C 10 1 0.1 VO =5 V 0.01 0 0 50 10 20 30 40 VR, REVERSE BIASTAGE VOL (VOL TS) 0 0.001 1 2 3 4 5 6 7 8 9 10 Vin, INPUT TAGE VOL (VOL TS) Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 100 Vin, INPUT VOL TAGE (VOL TS) VO =0.2 V TA = 25 -°C 10 25°C 75°C 1 0.10 10 20 30 40 IC, COLLECT OR CURRENT (mA) 50 Figure 21. Input Voltage versus Output Current 18-Dec-2009 Rev. A Page 8 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente CHARACTERISTIC CURVES 10 SMUN5313DW NPN TRANSISTOR hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECT OR VOL TAGE (VOL TS) TYPICAL ELECTRICAL CHARACTERISTICS 1000 IC/I B = 10 1 25°C TA = 25 -°C 75°C 0.1 0.01 0 TA = 5° 7C 25°C -25°C 100 10 1 50 20 40 IC, COLLECT OR CURRENT (mA) VCE = 10 V 10 IC, COLLECT OR CURRENT (mA) Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 100 f = 1 MHz IE = 0 V TA = 25 °C 0.6 0.4 0.2 0 0 10 20 30 40 VOL (VOL TS) VR, REVERSE BIASTAGE 50 25°C 75°C IC, COLLECT OR CURRENT(mA) Cob, CAP ACIT ANCE (pF) 1 0.8 100 TA = 25 -°C 10 1 0.1 0.01 VO = 5 V 0.001 0 Figure 24. Output Capacitance 2 4 6 VOL (VOL TS) Vin, INPUT TAGE 8 10 Figure 25. Output Current versus Input Voltage 100 Vin, INPUT VOL TAGE (VOL TS) VO = 0.2 V TA = 25 -°C 25°C 10 75°C 1 0.1 0 10 20 30 40 50 OR CURRENT (mA) IC, COLLECT Figure 26. Input Voltage versus Output Current 18-Dec-2009 Rev. A Page 9 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente CHARACTERISTIC CURVES VCE(sat) , COLLECT OR VOL TAGE (VOL TS) 1 IC/I B = 10 TA = 25 -°C 25°C 75°C 0.1 0.010 10 20 30 IC, COLLECT OR CURRENT (mA) SMUN5313DW PNP TRANSISTOR hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS 1000 TA = 5° 7C 25°C -25°C 100 10 40 1 10 IC, COLLECT OR CURRENT (mA) Figure 27. VCE(sat) versus IC Figure 28. DC Current Gain 100 f = 1 MHz lE = 0 V °C TA = 25 0.6 0.4 0.2 0 0 10 20 30 40 VOL (VOL TS) VR, REVERSE BIASTAGE 50 IC, COLLECT OR CURRENT(mA) Cob, CAP ACIT ANCE (pF) 1 0.8 100 25°C TA = 5°7C -25°C 10 1 0.1 0.01 VO =5 V 0 0.001 Figure 29. Output Capacitance 1 2 3 41 5 6 7 Vin, INPUT TAGE VOL (VOL TS) 8 9 Figure 30. Output Current versus Input Voltage 100 Vin, INPUT VOL TAGE (VOL TS) VO =0.2 V TA = 25 -°C 25°C 75°C 10 1 0. 1 0 10 20 30 40 50 IC, COLLECT OR CURRENT (mA) Figure 31. Input Voltage versus Output Current 18-Dec-2009 Rev. A Page 10 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente CHARACTERISTIC CURVES 1 IC/I B = 10 TA = 25 -°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECT OR CURRENT (mA) SMUN5314DW NPN TRANSISTOR hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECT OR VOL TAGE (VOL TS) TYPICAL ELECTRICAL CHARACTERISTICS 300 25°C 200 -25°C 150 100 50 0 1 80 2 4 6 8 10 15 20 40 50 60 70 80 90 100 IC, COLLECT OR CURRENT (mA) Figure 33. DC Current Gain Figure 32. VCE(sat) versus IC 100 4 3 IC, COLLECT OR CURRENT(mA) f = 1 MHz lE = 0 V °C TA = 25 3.5 Cob, CAP ACIT ANCE (pF) TA = 5° 7C VCE = 10 250 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 45 VR, REVERSE BIASTAGE VOL (VOL TS) Figure 34. Output Capacitance 50 TA = 5° 7C 25°C -25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT TAGE VOL (VOL TS) 8 10 Figure 35. Output Current versus Input Voltage 10 Vin, INPUT VOL TAGE (VOL TS) VO = 0.2 V TA = 25 -°C 25°C 75°C 1 0.1 0 10 20 30 40 OR CURRENT (mA) IC, COLLECT 50 Figure 36. Input Voltage versus Output Current 18-Dec-2009 Rev. A Page 11 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente CHARACTERISTIC CURVES 1 IC/I B = 10 TA = 25 -°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECT OR CURRENT (mA) SMUN5314DW PNP TRANSISTOR hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECT OR VOL TAGE (VOL TS) TYPICAL ELECTRICAL CHARACTERISTICS 180 25°C 140 -25°C 120 100 80 60 40 20 0 1 80 2 4 Figure 37. VCE(sat) versus IC 8 10 15 20 40 50 60 70 80 90 100 IC, COLLECT OR CURRENT (mA) 100 3.5 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIASTAGE VOL (VOL TS) 45 50 Figure 39. Output Capacitance TA = 5° 7C IC, COLLECT OR CURRENT(mA) f = 1 MHz lE = 0 V TA = 25 °C 4 Cob, CAP ACIT ANCE (pF) 6 Figure 38. DC Current Gain 4.5 0 TA = 5° 7C 160 VCE = 10 V 25°C -25°C 10 VO =5 V 1 0 2 4 6 Vin, INPUT TAGE VOL (VOL TS) 8 Figure 40. Output Current versus Input Voltage 10 Vin, INPUT VOL TAGE (VOL TS) VO =0.2 V 25°C TA = 25 -°C 75°C 1 0.1 0 10 20 30 40 IC, COLLECT OR CURRENT (mA) 50 Figure 41. Input Voltage versus Output Current 18-Dec-2009 Rev. A Page 12 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente CHARACTERISTIC CURVES 1000 1 75°C 0.1 25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) TA = 25°C 100 10 1 50 25°C 1 10 IC, COLLECTOR CURRENT (mA) Figure 42. VCE(sat) versus IC 100 Figure 43. DC Current Gain 12 100 IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) VCE = 10 V 75°C IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — SMUN5315DW NPN TRANSIST OR f = 1 MHz IE = 0 V TA = 25°C 10 8 6 4 2 0 75°C 10 25°C 1 TA = 25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 44. Output Capacitance 50 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 Figure 45. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) 10 TA = 25°C 1 25°C 75°C VO = 0.2 V 0.1 0 40 10 20 30 IC, COLLECTOR CURRENT (mA) 50 Figure 46. Input Voltage versus Output Current 18-Dec-2009 Rev. A Page 13 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente CHARACTERISTIC CURVES 1000 1 IC/IB = 10 75°C 0.1 25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 25°C 10 1 50 TA = 25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 47. VCE(sat) versus IC 100 Figure 48. DC Current Gain 100 4 IC, COLLECTOR CURRENT (mA) 4.5 Cob, CAPACITANCE (pF) VCE = 10 V 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — SMUN5315DW PNP TRANSISTOR f = 1 MHz IE = 0 V TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 75°C 10 25°C 1 TA = 25°C 0.1 0.01 VO = 5 V 0.001 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 49. Output Capacitance 50 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 Figure 50. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) 10 TA = 25°C 1 25°C 75°C VO = 0.2 V 0.1 0 40 10 20 30 IC, COLLECTOR CURRENT (mA) 50 Figure 51. Input Voltage versus Output Current 18-Dec-2009 Rev. A Page 14 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente CHARACTERISTIC CURVES 1000 1 IC/IB = 10 75°C 0.1 25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 25°C 10 1 50 TA = 25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 52. VCE(sat) versus IC 100 Figure 53. DC Current Gain 12 100 IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) VCE = 10 V 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — SMUN5316DW NPN TRANSISTOR f = 1 MHz IE = 0 V TA = 25°C 10 8 6 4 2 0 75°C 10 25°C 1 TA = 25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 54. Output Capacitance 50 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 Figure 55. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) 10 TA = 25°C 1 25°C 75°C VO = 0.2 V 0.1 0 40 10 20 30 IC, COLLECTOR CURRENT (mA) 50 Figure 56. Input Voltage versus Output Current 18-Dec-2009 Rev. A Page 15 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente CHARACTERISTIC CURVES 1000 1 75°C 0.1 25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) TA = 25°C 10 1 50 25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 57. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 4 3.5 100 Figure 58. DC Current Gain 4.5 Cob, CAPACITANCE (pF) VCE = 10 V 75°C IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — SMUN5316DW PNP TRANSISTOR 3 2.5 2 1.5 1 0.5 75°C 10 25°C TA = 25°C 1 0.1 0.01 VO = 5 V 0.001 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 59. Output Capacitance 50 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 Figure 60. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) 10 TA = 25°C 1 25°C 75°C VO = 0.2 V 0.1 0 40 10 20 30 IC, COLLECTOR CURRENT (mA) 50 Figure 61. Input Voltage versus Output Current 18-Dec-2009 Rev. A Page 16 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente CHARACTERISTIC CURVES 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — SMUN5330DW NPN TRANSISTOR 75°C 0.1 25°C 25°C 0.01 100 75°C 10 25°C TA = 25°C 0.001 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 1 30 1 10 IC, COLLECTOR CURRENT (mA) Figure 62. VCE(sat) versus IC Figure 63. DC Current Gain 10 100 75°C 10 Vin, INPUT VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) 100 25°C 1 TA = 25°C 0.1 0.01 VO = 5 V TA = 25°C 1 25°C VO = 0.2 V 0.1 0.001 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 Figure 64. Output Current versus Input Voltage 18-Dec-2009 Rev. A 75°C 0 20 5 10 15 IC, COLLECTOR CURRENT (mA) 25 Figure 65. Input Voltage versus Output Current Page 17 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente CHARACTERISTIC CURVES 100 1 IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — SMUN5330DW PNP TRANSISTOR 75°C 0.1 25°C 25°C 0.01 75°C 10 25°C TA = 25°C VCE = 10 V 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 66. VCE(sat) versus IC Figure 67. DC Current Gain 4.5 IC, COLLECTOR CURRENT (mA) 100 4 Cob, CAPACITANCE (pF) 100 f = 1 MHz IE = 0 V TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 0 75°C 10 25°C 1 TA = 25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 68. Output Capacitance 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 Figure 69. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) 10 TA = 25°C 75°C 1 25°C VO = 0.2 V 0.1 0 40 10 20 30 IC, COLLECTOR CURRENT (mA) 50 Figure 70. Input Voltage versus Output Current 18-Dec-2009 Rev. A Page 18 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente CHARACTERISTIC CURVES 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — SMUN5331DW NPN TRANSISTOR 75°C 0.1 25°C 25°C 0.01 0.001 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 100 75°C TA = 25°C 1 30 25°C 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 71. VCE(sat) versus IC Figure 72. DC Current Gain 12 100 IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) 100 f = 1 MHz IE = 0 V TA = 25°C 10 8 6 4 2 0 10 75°C 25°C 1 TA = 25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 73. Output Capacitance 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 Figure 74. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) 10 TA = 25°C 1 75°C 25°C VO = 0.2 V 0.1 0 20 5 10 15 IC, COLLECTOR CURRENT (mA) 25 Figure 75. Input Voltage versus Output Current 18-Dec-2009 Rev. A Page 19 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente CHARACTERISTIC CURVES 100 1 IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — SMUN5331DW PNP TRANSIST OR 75°C 0.1 25°C 25°C 0.01 TA = 25°C VCE = 10 V 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 76. VCE(sat) versus IC 100 Figure 77. DC Current Gain 4.5 IC, COLLECTOR CURRENT (mA) 100 4 Cob, CAPACITANCE (pF) 25°C 75°C 10 f = 1 MHz IE = 0 V TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 0 75°C 10 25°C 1 TA = 25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 78. Output Capacitance 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 Figure 79. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) 10 TA = 25°C 75°C 1 25°C VO = 0.2 V 0.1 0 40 10 20 30 IC, COLLECTOR CURRENT (mA) 50 Figure 80. Input Voltage versus Output Current 18-Dec-2009 Rev. A Page 20 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente CHARACTERISTIC CURVES 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — SMUN5332DW NPN TRANSISTOR 75°C 0.1 25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 75°C 100 25°C 10 TA = 25°C 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 81. VCE(sat) versus IC Figure 82. DC Current Gain 12 100 IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) 100 f = 1 MHz IE = 0 V TA = 25°C 10 8 6 4 2 0 75°C 10 25°C 1 TA = 25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 83. Output Capacitance 50 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 Figure 84. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) 10 TA = 25°C 25°C 1 75°C VO = 0.2 V 0.1 0 40 10 20 30 IC, COLLECTOR CURRENT (mA) 50 Figure 85. Input Voltage versus Output Current 18-Dec-2009 Rev. A Page 21 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente CHARACTERISTIC CURVES 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — SMUN5332DW PNP TRANSISTOR 75°C 0.1 25°C 25°C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) TA = 25°C 10 1 50 75°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 86. VCE(sat) versus IC 100 Figure 87. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 6 Cob, CAPACITANCE (pF) 25°C f = 1 MHz IE = 0 V TA = 25°C 5 4 3 2 1 0 75°C 10 25°C 1 TA = 25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 88. Output Capacitance 50 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 Figure 89. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) 10 TA = 25°C 1 75°C 25°C VO = 0.2 V 0.1 0 40 10 20 30 IC, COLLECTOR CURRENT (mA) 50 Figure 90. Input Voltage versus Output Current 18-Dec-2009 Rev. A Page 22 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente CHARACTERISTIC CURVES 1000 1 VCE = 10 V IC/IB = 10 0.1 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — SMUN5333DW NPN TRANSISTOR 75°C 25°C 25°C 0.01 0.001 0 5 10 15 25 20 IC, COLLECTOR CURRENT (mA) 75°C 25°C 10 1 30 TA = 25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 91. VCE(sat) versus IC Figure 92. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25°C 3.5 Cob, CAPACITANCE (pF) 100 3 2.5 2 1.5 1 0.5 0 75°C 10 25°C 1 TA = 25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 93. Output Capacitance 50 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 Figure 94. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) 10 TA = 25°C 1 75°C 25°C VO = 0.2 V 0.1 0 20 5 10 15 IC, COLLECTOR CURRENT (mA) 25 Figure 95. Input Voltage versus Output Current 18-Dec-2009 Rev. A Page 23 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente CHARACTERISTIC CURVES 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — SMUN5333DW PNP TRANSISTOR 75°C 0.1 25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 75°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 96. VCE(sat) versus IC 100 Figure 97. DC Current Gain 8 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25°C 7 Cob, CAPACITANCE (pF) 25°C 10 1 50 TA = 25°C 6 5 4 3 2 1 0 75°C 10 25°C 1 0.1 TA = 25°C 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 98. Output Capacitance 50 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10 Figure 99. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) 10 TA = 25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 100. Input Voltage versus Output Current 18-Dec-2009 Rev. A Page 24 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente CHARACTERISTIC CURVES 1000 1 VCE = 10 V IC/IB = 10 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — SMUN5334DW NPN TRANSISTOR 75°C 0.1 25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 101. VCE(sat) versus IC 100 Figure 102. DC Current Gain 3.5 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25°C 3 Cob, CAPACITANCE (pF) 25°C 10 1 50 TA = 25°C 2.5 2 1.5 1 0.5 0 75°C 10 25°C 1 0.1 TA = 25°C 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 103. Output Capacitance 50 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 Figure 104. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) 100 10 TA = 25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 105. Input Voltage versus Output Current 18-Dec-2009 Rev. A Page 25 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente CHARACTERISTIC CURVES 1000 1 VCE = 10 V IC/IB = 10 0.1 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — SMUN5334DW PNP TRANSISTOR 75°C 25°C 25°C 0.01 0.001 0 5 20 10 15 25 IC, COLLECTOR CURRENT (mA) Figure 106. VCE(sat) versus IC 18-Dec-2009 Rev. A 30 75°C 100 TA = 25°C 25°C 10 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 107. DC Current Gain Page 26 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente CHARACTERISTIC CURVES 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — SMUN5335DW NPN TRANSISTOR 75°C 0.1 25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 75°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 108. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) 100 Figure 109. DC Current Gain 12 f = 1 MHz IE = 0 V TA = 25°C 10 25°C 10 1 50 TA = 25°C 8 6 4 2 0 75°C 10 25°C 1 TA = 25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 110. Output Capacitance 50 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 Figure 111. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) 10 TA = 25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 112. Input Voltage versus Output Current 18-Dec-2009 Rev. A Page 27 of 28 SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente CHARACTERISTIC CURVES 1000 1 VCE = 10 V IC/IB = 10 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — SMUN5335DW PNP TRANSISTOR 75°C 0.1 25°C 25°C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 113. VCE(sat) versus IC 100 Figure 114. DC Current Gain 4.5 IC, COLLECTOR CURRENT (mA) 100 4 Cob, CAPACITANCE (pF) 25°C 10 1 50 TA = 25°C f = 1 MHz IE = 0 V TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 0 25°C 10 75°C 1 TA = 25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0 Figure 115. Output Capacitance 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10 Figure 116. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) 10 75°C 1 25°C TA = 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 117. Input Voltage versus Output Current 18-Dec-2009 Rev. A Page 28 of 28