MMBT918 PN918 C E C B TO-92 SOT-23 E B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units VCEO Collector-Emitter Voltage Parameter 15 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current - Continuous 50 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation Max Units PN918 350 2.8 125 *MMBT918 225 1.8 357 556 mW mW/°C °C/W °C/W PN918 / MMBT918 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS VCEO(sus) V(BR)CBO Collector-Emitter Sustaining Voltage* I C = 3.0 mA, IB = 0 15 V Collector-Base Breakdown Voltage I C = 1.0 µA, I E = 0 30 V V(BR)EBO Emitter-Base Breakdown Voltage Collector Cutoff Current I E = 10 µA, I C = 0 VCB = 15 V, IE = 0 VCB = 15 V, TA = 150°C 3.0 ICBO 20 V 0.01 1.0 µA µA ON CHARACTERISTICS hFE DC Current Gain I C = 3.0 mA, VCE = 1.0 V VCE(sat ) Collector-Emitter Saturation Voltage I C = 10 mA, IB = 1.0 mA 0.4 V VBE( sat) Base-Emitter Saturation Voltage I C = 10 mA, IB = 1.0 mA 1.0 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance Cibo NF Input Capacitance Noise Figure IC = 4.0 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz VCB = 0, I E = 0, f = 1.0 MHz VBE = 0.5 V, IC = 0, f = 1.0 MHz 600 IC = 1.0 mA, VCE = 6.0 V, RG = 400Ω, f = 60 MHz MHz 1.7 3.0 2.0 pF pF pF 6.0 dB FUNCTIONAL TEST Gpe Amplifier Power Gain PO Power Output η Collector Efficiency *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% VCB = 12 V, IC = 6.0 mA, f = 200 MHz VCB = 15 V, IC = 8.0 mA, f = 500 MHz VCB = 15 V, IC = 8.0 mA, f = 500 MHz 15 dB 30 mW 25 % PN918 / MMBT918 NPN RF Transistor (continued) 100 Vce = 5V 90 80 125 °C 70 60 25 °C 50 40 - 40 °C 30 20 0.1 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) 50 Base-Emitter Saturation Voltage vs Collector Current β = 10 1 - 40 °C 0.8 25 °C 125 °C 0.6 0.4 0.1 IC Collector-Emitter Saturation Voltage vs Collector Current 0.3 β = 10 0.25 0.2 125 °C 0.15 25 °C 0.1 - 40 °C 0.05 0.1 1 10 I C - COLLECTOR CURRENT (mA) 30 P 43 1 10 - COLLECTOR CURRENT (mA) 30 Base-Emitter ON Voltage vs Collector Current 1 0.9 VCE = 5V - 40 °C 0.8 25 °C 0.7 0.6 125 °C 0.5 0.4 0.3 0.1 1 10 I C - COLLECTOR CURRENT (mA) P 43 Collector-Cutoff Current vs Ambient Temperature ICBO- COLLECTOR CURRENT (nA) VBESAT- BASE-EMITTER VOLTAGE (V) P 43 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current VBE(ON)- BASE-EMITTER ON VOLTAGE (V) hFE - TYPICAL PULSED CURRENT GAIN DC Typical Characteristics 5 VCB = 20V 1 0.1 25 50 75 100 125 T A - AMBIENT TEMPERATURE ( °C) 150 20 PN918 / MMBT918 NPN RF Transistor (continued) Input and Output Capacitance vs Reverse Voltage 100 10 1 Cob Cib 0.1 0.1 1 10 Vce - COLLECTOR VOLTAGE(V) 100 Gain Bandwidth Product vs Collector Current Vce = 5V 140 120 100 80 60 40 20 0 1 10 20 50 100 200 I C- COLLECTOR CURRENT (mA) P 43 Contours of Constant Gain Bandwidth Product (fT) Contours of Constant Noise Figure Small Signal Current Gain vs. Collector Current POWER DISSIPATION vs AMBIENT TEMPERATURE PD - POWER DISSIPATION (mW) CAPACITANCE (pF) f = 1.0 MHz f T - GAIN BANDWIDTH PRODUCT (MHz) AC Typical Characteristics 350 300 TO-92 250 200 SOT-23 150 100 50 0 0 25 50 75 100 TEMPERATURE ( ° C) 125 150 PN918 / MMBT918 NPN RF Transistor (continued) Common Emitter Y Parameters vs. Frequency Input Admittance vs. Collector Current-Output Short Circuit Input Admittance vs. Collector Current-Output Short Circuit Input Admittance vs. Frequency-Output Short Circuit Forward Transfer Admittance vs. Frequency-Output Open Circuit Forward Transfer Admittance vs. Collector Current-Output Short Circuit Forward Transfer Admittance vs. Collector Current-Output Short Circuit PN918 / MMBT918 NPN RF Transistor (continued) Common Emitter Y Parameters vs. Frequency Reverse Transfer Admittance vs. Collector Current-Input Short Circuit (continued) Reverse Transfer Admittance vs. Collector Current-Input Short Circuit Reverse Transfer Admittance vs. Frequency-Input Short Circuit Output Admittance vs. Collector Current-Input Short Circuit Output Admittance vs. Collector Current-Input Short Circuit Output Admittance vs. Frequency-Input Short Circuit PN918 / MMBT918 NPN RF Transistor (continued) Test Circuit 50 pF (NOTE 2) 175 pF 500 mHz Output Ω into 50Ω RFC (NOTE 1) 1000 pF 2.2 KΩ Ω - VCC NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long 1000 pF RFC VCC FIGURE 1: 500 MHz Oscillator Circuit PN918 / MMBT918 NPN RF Transistor