ATMEL ATR7032

Features
•
•
•
•
•
•
•
•
•
Frequency Range 2.4 GHz to 2.5 GHz
Supply Voltage 2.7V to 3.6V
32 dB Power Gain
23 dBm Linear Output Power for IEEE 802.11b Mode Operation
EVM < 2.0% at 19 dBm Output Power for IEEE 802.11g Mode Operation
On-chip Power Detector with 20 dB Dynamic Range
Power-down Mode and Biasing Control
Input and Interstage Matching Fully On-chip
Low Profile Lead-free Plastic Package QFN16 (3 × 3 × 0.9 mm)
Applications
•
•
•
•
IEEE 802.11b DSSS WLAN
IEEE 802.11g OFDM WLAN
PC Cards, PCMCIA, Access Points
2.4 GHz ISM Band Application
1. Description
This power amplifier (PA) is designed for high-performance 802.11b and 802.11g
multi-mode applications such as Mini PCI and PCMCIA for portable devices and
access points. The low profile plastic package with internal input matching to 50Ω and
on-chip interstage matching minimizes the PCB board-space and allows simplified
integration with very few passive components. The on-chip power detector provides a
voltage linear to the output power, while the standby/bias control logic provides
power-saving and shutdown options. The PA is realized as a three stage PA with
internal interstage matching and an open-collector output structure.
High Gain
Power Amplifier
for 802.11b/g
WLAN Systems
ATR7032
Preliminary
The power amplifier is designed using Atmel’s Silicon-Germanium (SiGe2) process
and provides excellent linearity and noise performance, high gain, and good poweradded efficiency.
Rev. 4846B–WLAN–04/05
12
13
V_PA1
GND_RF
RF_IN
11
NC
NC
V_PA2
Block Diagram
IC
Figure 1-1.
10
9
ATR7032
14
8
RF_OUT
15 50 Ω Input
Interstage
Matching
Match
7
Interstage
Matching
RF_OUT
6
IC
RF_OUT
16
5
RF_OUT
Paddle
Standby/
Bias
Circuitry
2
3
GND_VCC
2
VCC
VCTRL
1
Voltage
Detector
4
VDET
GND_RF
ATR7032 [Preliminary]
4846B–WLAN–04/05
ATR7032 [Preliminary]
2. Pin Configuration
Pinning QFN16
IC
RF_IN
GND
V_PA1
Figure 2-1.
16 15 14 13
12 IC
1
11 V_PA2
2
ATR7032
10 NC
3
9 NC
4
5 6 7 8
RF_OUT
RF_OUT
RF_OUT
RF_OUT
VCTRL
VCC
GND_VCC
VDET
Table 2-1.
Pin Description
Pin
Symbol
Function
1
VCTRL
2
VCC
3
GND_VCC
4
VDET
5
RF_OUT
RF output
6
RF_OUT
RF output
7
RF_OUT
RF output
8
RF_OUT
RF output
Power-up/biasing control voltage
Supply voltage
Ground
Power detector voltage
9
NC
Not connected
10
NC
Not connected
11
V_PA2
12
IC
13
V_PA1
14
GND
Ground
15
RF_IN
RF input
16
IC
Internally connected, on-chip matching; must not be externally connected
Slug
–
Ground
Supply voltage PA stage 2
Internally connected, on-chip matching; must not be externally connected
Supply voltage PA stage 1
3
4846B–WLAN–04/05
3. Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Symbol
Value
Unit
Supply voltage
Test Conditions
VCC
TBD
V
Supply current
ICC
600
mA
Junction temperature
Tj
150
°C
Storage temperature
TStg
–40 to +125
°C
Input RF power
PIN
12
dBm
VCONTR
0 to +3.0
V
500
V
Symbol
Value
Unit
Supply voltage range
VCC
2.7 to 3.6
V
Ambient temperature range
Tamb
–40 to +85
°C
f
2400 to 2500
MHz
Control voltage power
up/down and biasing
ESD protection, all pins
EIA/JESD22-A114-B
VESD
Note:
1. The part may not survive all maximums applied simultaneously.
4. Operating Range
Parameters
Frequency range
5. Electrical Characteristics
Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): VCC = 3.3V, Frequency = 2.45 GHz, Tamb = 25°C
No.
1.0
1.1
1.2
1.3
Parameters
Control voltage range
Current consumption
Test Conditions
Pin
Symbol
Min.
PA operating mode
VCONTR
1
Power down mode
VCONTR
Quiescent
ICQ
Power down mode
IPD
Typ.
Max.
Unit
Type*
2
V
A
0.2
90
A
mA
A
µA
A
10
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
4
ATR7032 [Preliminary]
4846B–WLAN–04/05
ATR7032 [Preliminary]
6. Electrical Characteristics – Unmodulated Carrier
Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): VCC = 3.3V, Frequency = 2.45 GHz, Tamb = 25°C
No.
Parameters
Test Conditions
2.0
Saturated output
power
For reference
2.1
P1dB output power
2.2
Harmonic rejection
2.3
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
PSAT
28.5
dBm
A
P1dB
27
dBm
A
POUT = 23 dBm
2fout
3fout
–45
–30
dBc
dBc
C
C
Small signal gain
ICQ, small signal
condition
GL
32
dB
A
2.4
Gain variation
ICQ, small signal
condition
2.4 to 2.5 GHz
–40 to +85°C
dB
dB
A
C
2.5
Reverse isolation
ICQ, small signal
condition
ISOr
40
dB
C
2.6
Input 50Ω VSWR
ICQ, small signal
condition
VSWRIN
2:1
C
2.7
Output 50Ω VSWR
ICQ, small signal
condition, with
external matching
VSWROUT
2:1
C
Gvarfreq
Gvartemp
–1
–1.5
+1
+1.5
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
7. Electrical Characteristics – 11 Mbps CCK Modulation
Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): VCC = 3.3V, Frequency = 2.45 GHz, Tamb = 25°C,
11 Mbps CCK modulation with Gaussian transmit filtering of BT = 0.4, conforming to IEEE 802.11b
No.
Parameters
Test Conditions
Pin
Symbol
3.0
Maximum linear
output power
ACPR1 ≥ 33 dBc,
ACPR2 ≥ 55 dBc
PLIN
3.1
Linear power gain
POUT = PLIN,
ACPR1 ≥ 33 dBc,
ACPR2 ≥ 55 dBc
3.2
Current consumption
POUT = PLIN,
ACPR1 ≥ 33 dBc,
ACPR2 ≥ 55 dBc
Min.
Typ.
Max.
Unit
Type*
23
dBm
A
GL
32
dB
A
ICC
220
mA
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
8. Electrical Characteristics – 54 Mbps OFDM Modulation
Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): VCC = 3.3V, Frequency = 2.45 GHz, Tamb = 25°C,
54 Mbps OFDM modulation, conforming to IEEE 802.11g; 0.7% EVM measurement equipment noise floor is included in the EVM
measurement result.
No.
Parameters
Test Conditions
Pin
Symbol
4.0
Error vector
magnitude
POUT = 19 dBm
EVM
4.1
Linear power gain
POUT = 19 dBm
4.2
Current consumption
POUT = 19 dBm
Min.
Typ.
Max.
Unit
Type*
2.0
%
A
GL
32
dB
A
ICC
150
mA
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
5
4846B–WLAN–04/05
9. Power Detector
Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): VCC = 3.3V, Frequency = 2.45 GHz, Tamb = 25°C
No.
Parameters
Test Conditions
5.0
Detector voltage
range
5.1
5.2
Pin
Symbol
Min.
POUT = 5 to 25 dBm
VDET
0
Settling time
POUT = 5 to 25 dBm
tSET
Detector accuracy
POUT = 5 to 25 dBm
VCC = 2.7 to 3.6V
Tamb = –40 to +85°C
∆POUT
Typ.
Max.
Unit
Type*
2
V
A
0.5
µs
C
±0.7
dB
C
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
10. Application Circuit
Figure 10-1. Application Board Schematic
V_PA2
V_PA3
C11(1)
C17(1)
C18(1)
C12(1)
L1
12
13
V_PA1
11
NC
L2
NC
IC
C3
10
C4
L3
9
ATR7032
C16(1)
C10(1)
C2
14
8
GND_RF
RF_IN
15 50 Ω Input
C1
Interstage
Matching
Match
7
Interstage
Matching
T1
T2
6
IC
C5
16
C7
PA_Out
5
GND_RF
T1, T2: Microstrip Line
Paddle
Standby/
Bias
Circuitry
1
2
Voltage
Detector
3
4
Microstrip Line
Length/mm
Width/mm
T1
4.3
0.64
T2
5.6
0.64
Metal layer distance to ground:
360 µm
CU metal layer thickness:
35 µm
4.5
εr of dielectric material (FR4):
C8
(1) Components can be omitted depending on application
C9(1)
VCTRL
6
C19
VCC
R1(1)
IC: internally connected; pin must not be connected to any
other pin or supply chain
VDET
ATR7032 [Preliminary]
4846B–WLAN–04/05
ATR7032 [Preliminary]
Figure 10-2. Application Board Layout
Table 10-1.
Bill of Materials for Application Board
Component
Reference
Value
Size
Capacitor
C1
4p7
0603
Capacitor
C2
56p
0603
Capacitor
C3
56p
0603
Capacitor
C4
56p
0603
Capacitor
C5
1p8
0603
Capacitor
C7
4p7
0603
Capacitor
C8
4p7
0603
Capacitor
C9
4p7
0603
Capacitor
C10(1)
10n
0603
Capacitor
10n
0603
10n
0603
1µ
0603
1µ
0603
1µ
0603
Capacitor
C11(1)
C12(1)
C16(1)
C17(1)
C18(1)
C19(1)
1µ
0603
Resistor
R1
22k
0603
Inductor
L1
15n
0603
Inductor
L2
15n
0603
15n
Inductor
L3
1. Components can be omitted depending on application
0603
Capacitor
Capacitor
Capacitor
Capacitor
Note:
7
4846B–WLAN–04/05
10.1
Evaluation Board Set-up Instructions
After connection of all cables (RF and DC):
• VCC, VV_PA1, VV_PA2, VRF_Out = 3.3V
• Increase VCTRL until 90 mA quiscent current without RF signal is reached (~ 1.05V)
• Incease input power until desired linear output power is reached
11. Typical Operating Characteristics
Figure 11-1. Typical Gain and Current versus Control Voltage:
Frequency = 2450 MHz; PIn = –40 dBm; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V
40
350
Gain
30
300
20
250
10
200
IV_PA3
0
150
-10
I (mA)
Gain (dB)
Itot
100
IV_PA2
-20
50
IV_PA1 + IVCC
-30
0.6
0.8
1
1.2
1.4
1.6
1.8
0
2
VCTRL (V)
Figure 11-2. Typical Operating Point for 54 Mbps OFDM Modulation: Frequency = 2450 MHz;
POut = 19 dBm; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V
3.5
180
3
170
Itot
I
160
EVM
2
150
1.5
140
1
I (mA)
EVM (%)
2.5
130
Operating
Point
0.5
120
0
110
0.9
0.95
1
1.05
1.1
1.15
1.2
VCTRL (V)
8
ATR7032 [Preliminary]
4846B–WLAN–04/05
ATR7032 [Preliminary]
Figure 11-3. Typical S-Parameter at Operating Point: VCTRL = 1.05V; ICQ = 90 mA;
VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V
10
S22
30
20
S21 (dB)
0
S11
10
-10
-20
S21
0
-30
-10
-40
S12
-20
-50
-30
S12, S11 and S22 (dB)
40
-60
-40
-70
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
f (GHz)
Figure 11-4. Typical S-Parameter at Operating Point (Detail): VCTRL = 1.05V; ICQ = 90 mA;
VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V
40
10
S21
0
20
S11
-10
10
S22
-20
0
-30
-10
-40
S12
-20
-50
-30
-60
-40
2.40
2.43
2.45
2.48
S12, S11 and S22 (dB)
S21 (dB)
30
-70
2.50
f (GHz)
9
4846B–WLAN–04/05
Figure 11-5. Typical Power-sweep with Unmodulated Carrier at Operating Point:
Frequency = 2450 MHz; VCTRL = 1.05V; ICQ = 90 mA;
VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V
50
500
Itot
45
450
Gain (dB) and PAE (%)
PAE
40
400
35
350
30
300
25
250
20
I (mA)
Gain
200
IV_PA3
15
150
IV_PA2
10
100
IV_PA1 + IVCC
5
50
0
0
3
5
7
9
11
13
15
17
19
21
23
25
27
29
POut (dBm)
Figure 11-6. Typical Power-sweep with Unmodulated Carrier at Operating Point (Temperature
Behaviour): Frequency = 2450 MHz; VCTRL = 1.05V; ICQ = 90 mA;
VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V
40
550
500
Gain (-40°C)
36
450
Gain (+25°C)
34
400
Gain (+85°C)
32
350
30
300
28
250
Itot (+85°C)
Itot (+25°C)
26
200
Itot (-40°C)
24
I (mA)
Gain (dB) and PAE (%)
38
150
22
100
20
50
3
5
7
9
11
13
15
17
19
21
23
25
27
29
Pout (dBm)
10
ATR7032 [Preliminary]
4846B–WLAN–04/05
ATR7032 [Preliminary]
Figure 11-7. Typical Spectral Plot Conforming Compliance to 802.11b Spectral Mask for
11 Mbps CCK Modulation at Operating Point: POut = 23 dBm;
Frequency = 2450 MHz; VCTRL = 1.05V; ICC = 220 mA;
VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V
Ref
21.1 dBm
20
Offset
* At t 0 dB
20.8 dB
CH PWR 22.79 dBm
LIMIT CHECK MARG
A
LINE ACPRBU_G MARG
10
1 RM *
AVG
* RBW 100 kHz
* VBW 100 kHz
* SWT 20 ms
TRG
LVL
0
-10
-20
33 dBc
EXT
-30
-40
55 dBc
-50
-60
-70
Center 2.45 GHz
Span 100 MHz
10 MHz/
4.0
180
3.5
170
3.0
160
2.5
150
Itot
2.0
1.5
140
I (mA)
EVM (%)
Figure 11-8. Typical Power-sweep with 54 Mbps OFDM Modulation at Operating Point:
Frequency = 2450 MHz; VCTRL = 1.05V; ICQ = 90 mA;
VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V
130
EVM
1.0
120
0.5
110
0.0
100
15
16
17
18
19
20
21
POut (dBm)
11
4846B–WLAN–04/05
Figure 11-9. Typical Spectral Plot Conforming Compliance to 802.11g Spectral Mask for
54 Mbps OFDM Modulation at Operating Point:
POut = 23 dBm; Frequency = 2450 MHz; VCTRL = 1.05V; ICC = 150 mA;
VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V
Ref
10
1 RM *
AVG
13.1 dBm
Offset
* RBW 100 kHz
* VBW 100 kHz
* SWT 20 ms
* At t 5 dB
CH PWR 18.98 dBm
20.8 dB
A
0
GAT
-10
TRG
LVL
-20
-30
EXT
-40
-50
-60
-70
-80
Center 2.45 GHz
Span 100 MHz
10 MHz/
Figure 11-10. Typical Detector Voltage versus POut for Unmodulated Carrier (Temperature and
VCC parameterized): Frequency = 2450 MHz; VCTRL = 1.05 V; ICQ = 90 mA;
VV_PA1 = VV_PA2 = VRF_Out = VCC = 2.7V, 3.3V, 3.6V; Tamb = –40°C, 25°C, 85°C
3.0
Voltage (V)
2.5
2.0
1.5
VDET
1.0
0.5
0.0
-5
-1
3
7
11
15
19
23
27
POut (dBm)
12
ATR7032 [Preliminary]
4846B–WLAN–04/05
ATR7032 [Preliminary]
Figure 11-11. Power Detector Response (Rising Edge):
POut = 23 dBm; Frequency = 2450 MHz; VCTRL = 1.05V; ICQ = 90 mA;
VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V
Figure 11-12. Power Detector Response (Falling Edge):
POut = 23 dBm; Frequency = 2450 MHz; VCTRL = 1.05V; ICQ = 90 mA;
VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V
13
4846B–WLAN–04/05
12. Ordering Information
Extended Type Number
Package
Remarks
MOQ
ATR7032-PVPW
QFN16, 3 × 3
Taped and 80 mm reeled,
RoHs compliant
6000 pcs.
ATR7032-PVQW
QFN16, 3 × 3
Taped and 330 mm reeled,
RoHs compliant
1500 pcs.
ATR7032-DEV-BOARD
–
Evaluation board
1
13. Package Information
Package: QFN 16 - 3x3
Exposed pad 1.7x1.7
(acc. JEDEC OUTLINE No. MO-220)
Dimensions in mm
Not indicated tolerances ±0.05
3
0.9±0.1
1.7
+0
0.05 -0.05
68
2.
1
9
4
8
5
15
16
12
0.25
4
13
technical drawings
according to DIN
specifications
0.
0.4±0.1
16
1
0.5 nom.
Drawing-No.: 6.543-5115.01-4
Issue: 1; 07.03.05
1.5
Assembly Chip PAC
14
ATR7032 [Preliminary]
4846B–WLAN–04/05
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4846B–WLAN–04/05