Features • • • • • • • Supply-voltage Range: 2.7 V to 5.5 V Single-ended Output, no Balun Required Single-ended Input for RF and LO Excellent Isolation Characteristics Power-down Mode IP3 and Compression Point Programmable 2.5-GHz Operating Frequency Benefits • • • • Reduced System Costs as only Few External Component (no Balun) are Required Small Package Very Low Current Consumption Easy to Use Electrostatic sensitive device. Observe precautions for handling. 2.5-GHz Doublebalanced Mixer U2795B Description The U2795B is a 2.5-GHz mixer for WLAN and RF telecommunications equipment, e.g., DECT and PCN. The IC is manufactured using Atmel's advanced bipolar technology. A double-balanced approach was chosen to assure good isolation characteristics and a minimum of spurious products. The input and output are single-ended, and their characteristics are programmable. No output transformer or balun is required. Figure 1. Block Diagram VS 2 R2 RFi 3 5 IFo 4 So P VR R1 VH VH 7 LO i Voltage regulator 6 GND 8 PD 1 VS Rev. 4654A–CELL–01/03 1 Pin Configuration Figure 2. Pinning VS 1 8 PU RF 2 7 LOi P 3 6 GND SO 4 5 IFO Pin Description 2 Pin Symbol Function 1 VS Supply voltage 2 RFi RF input 3 P Progamming port IP3, CP 4 SO Output symmetry 5 IFO IF output 6 GND 7 LOi LO input 8 PU Power-up Ground U2795B 4654A–CELL–01/03 U2795B Functional Description Supply Voltage The IC is designed for a supply-voltage range of 2.7 V to 5.5 V. As the IC is internally stabilized, the performance of the circuit is nearly independent of the supply voltage. Input Impedance The input impedance, ZRFi, is about 700 W with an additional capacitive component. This condition provides the best noise figure in combination with a matching network. 3rd Order Intercept Point (IP3) The voltage divider, RP/R1, determinates both the input and output intercept point, IIP3 and OIP3. If the value of RP is infinite, the maximum value of IIP3 reachs about -4 dBm. The IP3/RP characteristics are shown in Figure 3 and Figure 4. Output Impedance and Intercept Point The output impedance is shown in Figure 11. Both low output impedance and a high intercept point are defined to a high value of RP. Current Consumption, IS Depending on the chosen input and output conditions of the IC, the current consumption,IS, is between 4 mA and 10 mA. The current consumption in dependence of Rp is shown in Figure 6. Power-up This feature provides extended battery lifetime. If this function is not used, Pin 8 has to be connected to VS (Pin 1). Output Symmetry The symmetry of the load current can be matched and thus optimized for a given load impedance. Absolute Maximum Ratings Parameters Symbol Value Unit Supply voltage VS 6 V Input voltage VI 0 to VS V Junction temperature Tj 125 °C Tstg -40 to +125 °C Symbol Value Unit RthJA 175 K/W Symbol Value Unit Storage-temperature range Thermal Resistance Parameters Junction ambient SO8 Operating Range Parameters Supply-voltage range Ambient-temperature range VS 2.7 to 5.5 V Tamb -40 to +85 °C 3 4654A–CELL–01/03 Electrical Characteristics VS = 3 V, fLOi = 1 GHz, IF = 900 MHz, RF = 100 MHz, RP = ¥, system impedance Zo = 50 W, Tamb = 25°C, RT = 56 W reference point Pin 6, unless otherwise specified No. Parameters 1.1 Supply voltage range 1.2 1.3 2 Test Conditions Pin Symbol Min. 1 VS Typ. Max. Unit Type* 2.7 5.5 V A 9 3 13 6.2 mA mA A A dB dB B Supply Current VS = 2.7 V 1 1 IS IS Conversion Supply Current RL = 50 W, RT = ¥ RL = 50 W, RT = 56 W 1 PGC PGC 2 RFi 10 2500 MHz D 9 4 Operating Frequencies 2.1 RFi frequency 2.2 LOi frequency 7 fLOi 50 2500 MHz D 2.3 IFo frequency 5 fIFo 50 2500 MHz D 7, 2 ISLO–RF dBm D 3 Isolation 3.1 LO spurious at RFi PiLO = -10 to 0 dBm -30 3.2 RFi to LOi PiRF = -25 dBm 2, 7 ISRF–LO 35 dB D 3.3 LO spurious at IFo PiLO = -10 to 0 dBm 5, 7 ISLO–IF -25 dBm D 3.4 IFo to LOi 5, 7 ISIF–LO 30 dB D 5 CPO -10 dBm D 4 4.1 5 Output (IF) Output compression point Input (RF) 5.1 Input impedance 2 ZRFi 700||0.8 W||pF D 5.2 Input compression point 2 CPi -14 dBm D 5.3 3rd-order input intercept point 2 IIP3 -4 dBm D 7 PiLO -6 dBm D 6 6.1 7 Input (LO) LO level Voltage Standing Wave Ratio (VSWR) 7.1 Input LO 7 VSWRLOi <2 D 7.2 Output IF 4 VSWRIFo <2 D NF 10 ISPU <5 8 8.1 9 9.1 10 10.1 10.2 Noise Performance Noise figure PiLO = 0 dBm, RT = ¥ dB D 30 µA µA B B VS + 0.5 VS + 0.5 V V D D 1 V D 0.22 mA µA A D µs D Power-down Mode Supply current VPU < 0.5V VPU = 0 V 1 VS = 3.5 to 5.5 V VS = 2.7 to 3.5 V 8 Power-down Voltage “Power ON” “Power DOWN” 10.3 Power-down current 10.4 Settling time 8 Power ON Power DOWN VPON VS -0.5 VS VPDN 8 IPON IPDN 0.15 <5 5,8 tsPD < 30 *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 4 U2795B 4654A–CELL–01/03 U2795B Figure 3. IIP3 versus Resistor Rp, IF: 900 MHz -4 IIP3 (dBm) -5 -6 -7 -8 -9 -10 0 20 40 60 80 100 80 100 Rp (kW) Figure 4. OIP3 versus Resistor Rp, IF: 900 MHz 0 OIP3 (dBm) -5 -10 -15 -20 -25 0 20 40 60 Rp (kW) 5 4654A–CELL–01/03 Figure 5. Gain versus Resistor Rp, LO: 1030 MHz, level -10 dBm; RF: 130 MHz, -30 dBm, RT = 56 W 3 Gain (dB) -1 -5 -9 -13 0 20 40 60 80 100 Rp (kW) Figure 6. Supply Current IS versus Resistor Rp 12 10 Is (mA) 8 6 4 2 0 0 20 40 60 80 100 Rp (kW) 6 U2795B 4654A–CELL–01/03 U2795B Figure 7. Gain versus IF Output Frequency, LO Level: -6 dBm, RF: 130 MHz, -35 dBm; Parameter: RF Input Termination 18 with RF input matching LS = 220 nH, Cp = 4.7 pF Gain (dB) 14 without RT 10 6 2 with RT = 56 W -2 0 500 1000 1500 2000 2500 IF (MHz) Figure 8. IIP3 versus IF Output Frequency, LO Level: -6 dBm; RF: 130 MHz/ 130.1 MHz, -35 dBm; Parameter: RF Input Termination 0 -2 with R T = 56 W -4 IIP3 (dBm) -6 without R T -8 -10 -12 -14 with RF input matching LS = 220 nH, C p = 4.7 pF -16 -18 0 500 1000 1500 2000 2500 IF (MHz) 7 4654A–CELL–01/03 Figure 9. Double Sideband Noise Figure versus IF Output Frequency; LO: 1000 MHz, Level 0 dBm; no RF Input Matching, RT Left Out 12 10 NF (dB) 8 6 4 2 0 0 200 400 600 800 IF (MHz) Figure 10. Typical VSWR Frequency Response of the IF Output, RP = ¥ 5 VSWR 4 3 2 1 100 280 460 640 820 1000 IF Frequency (MHz) 8 U2795B 4654A–CELL–01/03 U2795B Figure 11. Typical Impedance of the Output versus RP at Frequency fIFo = 900 MHz Markers (from Left to Right): RP = ¥/22 kW/10 kW/8.2 kW/5.6 kW j 0.5j 2j 0.2j 5j 0 0.2 0.5 1 ¥ 5 2 -0.2j -5j -0.5j -2j -j Figure 12. Typical S11 Frequency Response of the IF Output, RP = ¥, IF Frequency from 100 MHz to 1000 MHz, Marker: 900 MHz j 0.5j 2j 0.2j 0 5j 0.2 0.5 1 2 ¥ 5 -0.2j -5j -0.5j -2j -j 9 4654A–CELL–01/03 Figure 13. Typical S11 Frequency Response of the RF Intput, RP = ¥, RT = ¥ RF Frequency from 100 MHz to 1000 MHz, Marker: 900 MHz j 0.5j 2j 0.2j 0 5j 0.2 0.5 1 2 ¥ 5 -0.2j -5j -0.5j -2j -j Figure 14. Typical S11 Frequency Response of the LO Intput, RP = ¥, LO Frequency from 100 MHz to 1000 MHz, Marker: 900 MHz j 0.5j 2j 0.2j 0 5j 0.2 0.5 1 2 ¥ 5 -0.2j -5j -0.5j -2j -j 10 U2795B 4654A–CELL–01/03 U2795B Application C1 VS 8 2 7 C2 RF Rp 3 C6 LO 6 5 4 C3 PU C5 U2795B RT C7 1 C4 IF RSO R I Table 1. Part List Part Value C1 10 nF C2, C3, C4, C5, C6, C7 100 pF *RP 50-W Microstrip *RSO 68 W ——— optional RT 56 W If the part-list values are used, the PU settling time is < 20 µs. Using other values, time requirements in burst-mode applications have to be considered. The values of RSO and RP depend on the input and output condition requirements. For RSO, 68 W is recommended. By means of the optional R I , the intercept and compression point can be slightly increased; values between 500 W and 1 kW are suitable. Please note that such modification will also increase the supply current. 11 4654A–CELL–01/03 Application Circuit (Evaluation Board) 12 U2795B 4654A–CELL–01/03 U2795B Ordering Information Extended Type Number Package Remarks U2795B-MFP SO8 Tube U2795B-MFPG3 SO8 Taped and reeled Package Information Package SO8 Dimensions in mm 5.2 4.8 5.00 4.85 3.7 1.4 0.25 0.10 0.4 1.27 6.15 5.85 3.81 8 0.2 3.8 5 technical drawings according to DIN specifications 1 4 13 4654A–CELL–01/03 Atmel Headquarters Atmel Operations Corporate Headquarters Memory 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 487-2600 Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland TEL (41) 26-426-5555 FAX (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimhatsui East Kowloon Hong Kong TEL (852) 2721-9778 FAX (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan TEL (81) 3-3523-3551 FAX (81) 3-3523-7581 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 436-4314 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France TEL (33) 2-40-18-18-18 FAX (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards Zone Industrielle 13106 Rousset Cedex, France TEL (33) 4-42-53-60-00 FAX (33) 4-42-53-60-01 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany TEL (49) 71-31-67-0 FAX (49) 71-31-67-2340 1150 East Cheyenne Mtn. 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