Semiconductor Laser LNC701PS GaAlAs Semiconductor Laser ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 Unit : mm 2 ø1.0 min. 0.4±0.1 Low threshold current Stable single horizontal mode oscillation 110˚±1˚ Y Features 2.3±0.2 1.27 0.25 Kovar glass LD pellet Reference plane Z 6.5±0.5 Optical disk memory drive Optical measuring equipment ø1.2 max. 3-ø0.45 0.5 max. Optical data processing devices 3 Reference slot 1.2±0.1 Applications PD 1 Junction plane 1.0±0.1 Long lifetime, high reliability LD X 2 1 3 1: LD anode 2: Common case 3: PD cathode ø2.0 Bottom view Absolute Maximum Ratings (Ta = 25˚C) Parameter Radiant power Reverse voltage Symbol Ratings Unit PO 35 mW Laser VR 2 V PIN VR (PIN) 30 V Pd (PIN) 100 mW Power dissipation Operating ambient temperature Topr –10 to +60 ˚C Storage temperature Tstg – 40 to +80 ˚C Electro-Optical Characteristics (Ta = 25˚C) Parameter Conditions min typ max Unit Threshold current Ith CW 10 20 30 mA Operating current IOP CW PO = 30mW 30 55 70 mA Operating voltage VOP CW PO = 30mW 2.0 2.5 V λL CW PO = 30mW 780 785 790 nm Horizontal direction*1 θ// CW PO = 30mW 8.5 10 11.5 deg. Vertical direction*1 θ⊥ CW PO = 30mW 23 25 28 deg. Differential efficiency η CW PO = 3 - 30mW 0.8 1.0 1.2 PIN photo current IP CW PO = 30mW, VR (PIN) = 5V Oscillation wavelength Radiation angle Optical axis accuracy 0.3 mA IR VR (PIN) = 15V 0.1 µA X direction θX CW PO = 30mW –2.0 +2.0 deg. Y direction θY CW PO = 30mW –3.0 +3.0 deg. Reverse current (DC) *1 Symbol The radiation angle is indicated as the full angle at half maximum. 1 Semiconductor Laser LNC701PS PO — IOP I—V 60 Far field pattern 200 100 Ta = 25˚C ∆PO 100 30 Relative radiant power I (mA) 40 0 Current Radiant power PO (mW) 50 20 –100 10 0 0 40 80 –200 –4 120 –2 0 2 80 60 20 20 Ith — Ta 10 3 VR (PIN) = 5V PO = 30mW 10 30 50 10 2 10 – 10 70 PIN photo current IP (µA) IOP (mA) Operating current Ith (mA) Threshold current 1 – 10 Ambient temperature Ta (˚C ) 10 30 50 70 Ambient temperature Ta (˚C ) PO — Ta Id — Ta VR (PIN) = 30V 10 PIN dark current Id (nA) Radiant power PO (mW) 50 40 30 20 0 – 10 10 30 50 70 Ambient temperature Ta (˚C ) 2 1 10 –1 10 –2 10 10 –3 – 10 10 30 50 Ambient temperature Ta (˚C ) 300 200 100 0 –10 10 30 50 Ambient temperature Ta (˚C ) 10 2 60 40 400 PO = 30mW 10 20 IP — Ta IOP — Ta 10 2 0 Angle θ (deg.) Voltage V (V) Operating current IOP (mA) θ⊥ 40 0 40 4 θ// 70 70