Rectifier Diodes MA2P291 Silicon planar type Unit : mm 4.0 ± 0.5 3.0 ± 0.2 • Sealed in the Mini-power type package • Allowing automatic assembly and downsizing of a set • Applicable to the AC line (lead pin pitch: 3 mm) • Allowing to supply with the magazine package Unit Repetitive peak reverse voltage VRRM 250 V Non-repetitive peak forward surge voltage* VRSM 300 V VR 200 V IO 200 mA Repetitive peak forward current IFRM 300 mA Non-repetitive peak forward surge current* IFSM 6 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0 to 0.14 Rating 1.5 ± 0.2 Symbol 0.3 ± 0.1 0.7 ± 0.1 5.0 ± 0.5 Parameter Output current 1 2 ■ Absolute Maximum Ratings Ta = 25°C Reverse voltage (DC) 1.5 ± 0.1 4.0 ± 0.2 ■ Features 0.5 ± 0.1 For small power current rectification 0.4 ± 0.2 1：Anode 2：Cathode Mini Power Type Package (2-pin) Note) *1 : 60 Hz sine half-wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Reverse current (DC) IR VR = 200 V Forward voltage (DC) VF IF = 200 mA Thermal resistance Rth(j-a) Min Typ Max Unit 1 µA 1 1.3 V 0.4 °C/mW Note) Rated input/output frequency: 5 MHz 1 MA2P291 Rectifier Diodes IF V F 1 000 12 Ta = 125°C 300 75°C 25°C 100 IFSM Forward surge current IFSM (A) 300 100 Ta = 125°C 30 − 20°C 10 3 1 0.3 Reverse current IR (nA) Forward current IF (mA) IFSM t IR V R 1 000 75°C 30 10 3 1 0.3 0.1 0.1 0.03 0.03 25°C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0 Forward voltage VF (V) 40 Thermal impedance Zth (°C / mW) Terminal capacitance Ct (pF) 3 2 1 0.5 0.3 0.2 0.1 10 20 30 50 100 200 300 500 Reverse voltage VR (V) (1) No Printed-circuit board (2) With a printed-circuit board Thickness t = 1.6 mm Copper foil tCu = 0.035 mm Anode side area 10 mm2 Cathode side area 20 mm2 Power dissipation PD (mW) 250 200 150 (2) (1) 100 50 0 0 40 80 120 Ambient temperature Ta (°C) 2 4 2 1 3 10 30 100 300 1 000 Time t (ms) (1) No Printed-circuit board (2) With a printed-circuit board Thickness t = 1.6 mm Copper foil tCu = 0.035 mm Anode side area 10 mm2 Cathode side area 20 mm2 1 (1) (2) 10−1 10−2 10−3 10−2 10−1 1 10 Time t (s) PD Ta 300 6 Zth t 5 0.05 8 0 0.1 0.3 80 120 160 200 240 280 320 10 f = 1 MHz Ta = 25°C 10 t Reverse voltage VR (V) Ct VR 20 10 160 102 103 104