Fast Recovery Diodes (FRD) MA3D694 Silicon planar type Unit : mm For high-frequency rectification 4.6 ± 0.2 15.0 ± 0.5 ■ Features φ 3.2 ± 0.1 1.4 ± 0.2 13.7 ± 0.2 4.2 ± 0.2 • Low forward rise voltage VF • Fast reverse recovery time trr • TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV • Easy-to-mount, caused by its V cut lead end ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Repetitive peak reverse voltage VRRM 400 V Non-repetitive peak reverse surge voltage VRSM 400 V Average forward current IF(AV) 10 A Non-repetitive peak forward surge current* IFSM 60 A Junction temperature Tj −40 to +150 °C Storage temperature Tstg −40 to +150 °C 2.6 ± 0.1 1.6 ± 0.2 0.8 ± 0.1 1 Parameter 2.9 ± 0.2 3.0 ± 0.5 9.9 ± 0.3 2 0.55 ± 0.15 2.54 ± 0.3 3 5.08 ± 0.5 1 : Anode 2 : Cathode 3 : Anode TO-220D Package Internal Connection 1 2 3 Min Typ Max Note) * : Half sine-wave; 10 ms/cycle ■ Electrical Characteristics Ta = 25°C Parameter Symbol Repetitive peak reverse current Conditions IRRM1 VRRM = 400 V, TC = 25°C 50 µA IRRM2 VRRM = 400 V, Tj = 150°C 6 mA Forward voltage (DC) VF IF = 5 A, TC = 25°C Reverse recovery time* trr IF = 1 A, IR = 1 A Thermal resistance Unit Rth(j-c) Direct current (between junction and case) Rth(j-a) 1 V 100 ns 3 °C/W 62.5 °C/W Note) 1. Rated input/output frequency: 10 MHz 2. * : trr measuring circuit 50 Ω 50 Ω trr IF D.U.T 5.5 Ω IR 0.1 × IR 1 MA3D694 Fast Recovery Diodes (FRD) IF V F VF Ta 100 IR VR 1 000 1.6 Ta = 150°C 1.4 100°C 25°C −20°C 0.1 1.2 IF = 10 A 1.0 5A 0.8 1A 0.6 0.4 Reverse current IR (µA) Ta = 150°C 1 100 Forward voltage VF (V) Forward current IF (A) 10 100°C 10 0 25°C 0.1 0.01 0.2 0 0.2 0.4 0.6 0.8 1.0 0 −40 1.2 Forward voltage VF (V) 0.01 0 40 80 120 IR T a Reverse current IR (µA) 10 V 10 1 0.1 120 160 200 IF(AV) TC Average forward current IF(AV) (A) 16 14 t0 t1 12 t0 / t1 = 1/2 1/3 10 DC 1/6 8 6 4 2 60 80 100 120 140 Case temperature TC (°C) 2 100 0 100 200 300 400 500 Reverse voltage VR (V) Ambient temperature Ta (°C) 160 300 400 500 600 PD(AV) IF(AV) 200 0 80 200 15 f = 1 MHz Ta = 25°C Terminal capacitance Ct (pF) 100 V 40 100 Ct VR 100 0 0 Reverse voltage VR (V) 300 VR = 400 V 0 40 200 Ambient temperature Ta (°C) 1 000 0.01 −40 160 600 Average forward power PD(AV) (W) 0.001 t0 / t1 = 1/6 t0 t1 1/3 1/2 10 DC 5 0 0 2 4 6 8 10 12 Average forward current IF(AV) (A)