Schottky Barrier Diodes (SBD) MA2Q735 Silicon epitaxial planar type Unit : mm For switching circuits 4.4 ± 0.3 0 to 0.05 ■ Features 2 + 0.1 Symbol Rating Unit Reverse voltage (DC) 2.15 ± 0.3 Parameter 1 0.25 − 0.05 ■ Absolute Maximum Ratings Ta = 25°C 1.4 ± 0.2 2.5 ± 0.3 • Forward current (average) IF(AV): 1 A type • Reverse voltage (DC value) VR: 30 V • Allowing automatic insertion with the emboss taping VR 30 V Repetitive peak reverse voltage VRRM 30 V Average forward current*1 IF(AV) 1 A Non-repetitive peak forward surge current*2 IFSM 30 A Junction temperature Tj −40 to +125 °C Storage temperature Tstg −40 to +125 °C 1.2 ± 0.4 1.2 ± 0.4 + 0.4 5.0 − 0.1 1 : Anode 2 : Cathode New Mini Power Type Package (2-pin) Marking Symbol: PA Note) *1 : With a printed-circuit board (copper foil area 2 mm × 2 mm or more on both cathode and anode sides) *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Reverse current (DC) IR VR = 30 V Forward voltage (DC) VF IF = 1 A Terminal capacitance Ct VR = 10 V, f = 1 MHz Reverse recovery time* trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω Min Typ Max Unit 1 mA 0.5 50 V pF 30 ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 20 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA2Q735 Schottky Barrier Diodes (SBD) IF(AV) Ta 2 K 1.0 0.8 0.6 0.4 Ta = 125°C 75°C 25°C 103 Reverse current IR (µA) A Copper foil 2 1.2 104 103 Forward current IF (mA) − 20°C Ta = 125°C 102 10 1 10 25°C 1 10−1 0 40 80 120 160 0 0.1 0.2 0.3 0.4 0.5 VF Ta Reverse current IR (µA) 0.6 0.5 IF = 1 A 0.3 100 mA VR = 30 V 10 V 5V 102 10 1 0 40 80 120 160 Ambient temperature Ta (°C) 200 10−1 −40 30 40 50 60 Ct VR 10 mA 0.1 20 600 103 0.2 10 IR T a 0.7 0.4 0 Reverse voltage VR (V) 104 0.8 0 −40 10−1 0.6 Forward voltage VF (V) Ambient temperature Ta (°C) 2 75°C 102 0.2 0 40 80 120 160 Ambient temperature Ta (°C) 200 Terminal capacitance Ct (pF) Average forward current IF(AV) (A) Printed-circuit board Anode side copper foil 2 mm × 2 mm Cathode side copper foil 2 mm × 2 mm 1.4 0 Forward voltage VF (V) IR VR IF V F 104 1.6 500 400 300 200 100 0 0 10 20 30 40 50 Reverse voltage VR (V) 60