MOTOROLA PC33879DWB/R2

Freescale Semiconductor, Inc.
MOTOROLA
Document order number: MC33879
Rev 3.0, 06/2004
SEMICONDUCTOR TECHNICAL DATA
Preliminary Information
33879
Freescale Semiconductor, Inc...
Configurable Octal Serial Switch
with Open Load Detect Current
Disable
The 33879 device is an 8-output hardware-configurable, high-side/low-side
switch with 16-bit serial input control. Two of the outputs may be controlled
directly via microprocessor for PWM applications. The 33879 incorporates
SMARTMOS technology, with CMOS logic, bipolar/MOS analog circuitry, and
DMOS power MOSFETs. The 33879 controls various inductive, incandescent,
or LED loads by directly interfacing with a microcontroller. The circuit’s
innovative monitoring and protection features include very low standby
currents, cascade fault reporting, internal +45 V clamp voltage for low-side
configuration, -20 V high-side configuration, output-specific diagnostics, and
independent overtemperature protection.
CONFIGURABLE OCTAL SERIAL
SWITCH WITH OPEN LOAD
DETECT CURRENT DISABLE
Features
• Designed to Operate 5.5 V < VPWR < 26.5 V
EK (Pb-FREE) SUFFIX
DWB SUFFIX
CASE 1437-01
32-LEAD SOICW-EP
• 16-Bit SPI for Control and Fault Reporting, 3.3 V/5.0 V Compatible
• Outputs Are Current Limited (0.5 A to 1.0 A) to Drive Incandescent
Lamps
• Output Voltage Clamp, +45 V (Low Side) and -20 V (High Side) During
Inductive Switching
• On/Off Control of Open Load Detect Current (LED Application)
• Internal Reverse Battery Protection on VPWR
ORDERING INFORMATION
Device
• Loss of Ground or Supply Will Not Energize Loads or Damage IC
• Maximum 5.0 µA IPWR Standby Current at 13.0 V VPWR
PC33879DWB/R2
PC33879EK/R2
• RDS(ON) of 1.0 Ω at 25°C Typical
• Short Circuit Detect and Current Limit with Automatic Retry
• Independent Overtemperature Protection
• Motorola Now Offers Pb-Free Packaging with the Suffix EK
Simplified Application
Diagram
33879 Simplified
Application
Diagram
VPWR
+5.0 V
MCU
33879
VDD VPWR
A0
MOSI
SCLK
CS
EN
DI
SCLK
CS
MISO
DO
PWM1
IN5
PWM2
IN6
GND
VBAT
D1
D2
D3
D4
S1
S2
S3
S4
High-Side Drive
M
D5
D6
D7
D8
S5
S6
S7
S8
H-Bridge Configuration
VBAT
Low-Side Drive
This document contains information on a product under development.
Motorola reserves the right to change or discontinue this product without notice.
© Motorola, Inc. 2004
VBAT
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Temperature
Range (TA)
Package
-40°C to 125°C
32 SOICW-EP
Freescale Semiconductor, Inc.
VDD
__
CS
VPWR
~50 µA
Internal
Bias
Power Supply
SCLK
DI
Overvoltage
Shutdown/POR
Sleep State
Charge
Pump
GND
DO
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EN
~110 kΩ
OV, POR, SLEEP
SPI and
Interface
Logic
Typical of all 8 output drivers
TLIM
SPI Bit 0
IN5
~50 µA
Enable
SPI Bit 4
IN5
IN6
Open
Load
Detect
Current
~80 µA
Gate
Drive
Control
Current
Limit
+
–
~50 µA
+
–
Open/Short
Comparator
+–
~3.5 V Open/Short
Threshold
Open
Load
Detect
Current
~80 µA
TLIM
Gate
Drive
Control
Current
Limit
+
–
+
–
Open/Short
Comparator
+
–
D1
D2
D3
D4
D7
D8
Drain
Outputs
S1
S2
S3
S4
S7
S8
Source
Outputs
D5
D6
Drain
Outputs
S5
Source
Outputs
S6
~3.5 V Open/Short
Threshold
Figure 1. 33879 Simplified Internal Block Diagram
33879
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GND
VDD
S8
NC
D8
S2
D2
NC
NC
S1
D1
D6
S6
IN6
EN
SCLK
1
32
2
31
3
30
4
29
5
28
6
27
7
26
8
25
9
24
10
23
11
22
12
21
13
20
14
19
DO
VPWR
NC
S7
D7
S4
D4
NC
NC
S3
D3
D5
S5
IN5
15
18
CS
16
17
DI
PIN FUNCTION DESCRIPTION
Pin
Pin Name
Formal Name
1
GND
Ground
Definition
2
VDD
Logic Supply Voltage
3
S8
Source Output 8
4, 8, 9, 24,
25, 30
NC
Not Connected
No internal connection to this pin.
5
D8
Drain Output 8
Output eight MOSFETdrain pin.
6
S2
Source Output 2
Output two MOSFET source pin.
7
D2
Drain Output 2
10
S1
Source Output 1
11
D1
Drain Output 1
Output one MOSFET drain pin.
12
D6
Drain Output 6
Output six MOSFET drain pin.
13
S6
Source Output 6
14
IN6
Command Input 6
PWM direct control input pin for output 6. IN6 is “OR” with SPI bit.
15
EN
Enable Input
IC Enable. Active high. With EN low, the device is in sleep mode.
16
SCLK
SPI Clock
17
DI
Serial Data Input
SPI control data input pin from MCU to the 33879. Logic [1] activates output.
18
CS
SPI Chip Select
SPI control chip select input pin from MCU to the 33879. Logic [0] allows data to be
transferred in.
19
IN5
Command Input 5
20
S5
Source Output 5
21
D5
Drain Output 5
Output five MOSFET drain pin.
22
D3
Drain Output 3
Output three MOSFET drain pin.
23
S3
Source Output 3
26
D4
Drain Output 4
27
S4
Source Output 4
Output four MOSFET source pin.
28
D7
Drain Output 7
Output seven MOSFET drain pin.
29
S7
Source Output 7
31
VPWR
Battery Input
32
DO
Serial Data Output
Digital ground.
Logic supply for SPI interface. With VDD low the device will be in sleep mode.
Output eight MOSFET source pins.
Output two MOSFET drain pin.
Output one MOSFET source pin.
Output six MOSFET source pin.
SPI control clock input pin.
PWM direct control input pin for output 5. IN5 is “OR” with SPI bit.
Output five MOSFET source pin.
Output three MOSFET source pin.
Output four MOSFET drain pin.
Output seven MOSFET source pin.
Power supply pin to the 33879. VPWR has internal reverse battery protection.
SPI control data output pin from the 33879 to the MCU. DO=0 no fault, DO=1 specific
output has fault.
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MAXIMUM RATINGS
All voltages are with respect to ground unless otherwise noted.
Rating
Symbol
Value
Unit
VDD
-0.3 to 7.0
VDC
–
-0.3 to 7.0
VDC
VPWR Supply Voltage (Note 1)
VPWR
-16 to 40
VDC
Output Clamp Energy (Note 2)
ECLAMP
50
mJ
Human Body Model (Note 3)
VESD1
±2000
Machine Model (Note 4)
VESD2
±200
TSTG
-55 to 150
°C
Operating Case Temperature
TC
-40 to 125
°C
Operating Junction Temperature
TJ
-40 to 150
°C
Maximum Junction Temperature
TJ
-40 to 150
°C
Power Dissipation (Note 5)
PD
1.7
W
Junction-to-Ambient
RθJA
71
Between the Die and the Exposed Die Pad
RθJC
1.2
VDD Supply Voltage (Note 1)
CS, DI, DO, SCLK, IN5, IN6, and EN (Note 1)
Freescale Semiconductor, Inc...
ESD Voltage
V
Storage Temperature
°C/W
Thermal Resistance
Notes
1. Exceeding these limits may cause malfunction or permanent damage to the device.
2. Maximum output clamp energy capability at 150°C junction temperature using single non-repetitive pulse method with I = 350 mA.
3. ESD1 testing is performed in accordance with the Human Body Model (CZAP = 100 pF, RZAP = 1500 Ω).
4.
ESD2 testing is performed in accordance with the Machine Model (CZAP = 200 pF, RZAP = 0 Ω).
5.
Maximum power dissipation at TA = 25°C with no heatsink used.
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STATIC ELECTRICAL CHARACTERISTICS
Characteristics noted under conditions of 3.1 V ≤ VDD ≤ 5.5 V, 5.5 V ≤ VPWR ≤ 18 V, -40°C ≤ TC ≤ 125°C unless otherwise noted.
Where applicable, typical values reflect the parameter’s approximate average value with VPWR = 13 V, TA = 25°C.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER INPUT
Supply Voltage Range
VPWR(fo)
Fully Operational
Supply Current
IPWR(on)
Sleep State Supply Current
IPWR(ss)
VDD or EN ≤ 0.8 V, VPWR = 13 V
Sleep State Supply Current
5.5
–
26.5
–
14
24
mA
µA
–
2.0
5.0
–
2.0
5.0
µA
IVDD(ss)
EN ≤ 0.8 V, VDD = 5.5 V
Freescale Semiconductor, Inc...
V
VPWR Overvoltage Shutdown Threshold Voltage
VPWR(OV)
27
28.5
32
V
VPWR Overvoltage Shutdown Hysteresis Voltage
VPWR(OV-hys)
0.2
1.5
2.5
V
VPWR Undervoltage Shutdown Threshold Voltage
VPWR(UV)
3.0
4.0
5.0
V
VPWR Undervoltage Shutdown Hysteresis Voltage
VPWR(UV-hys)
300
500
700
mV
Logic Supply Voltage
VDD
3.1
–
5.5
V
Logic Supply Current
IDD
250
400
700
µA
Logic Supply Sleep State Threshold Voltage
VDD(SS)
0.8
2.5
3.0
V
Logic Supply Sleep State Hysteresis (Note 6)
VDD(SS-hys)
0.3
–
1.5
V
Notes
6. This parameter is guaranteed by design but is not production tested.
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STATIC ELECTRICAL CHARACTERISTICS (continued)
Characteristics noted under conditions of 3.1 V ≤ VDD ≤ 5.5 V, 5.5 V ≤ VPWR ≤ 18 V, -40°C ≤ TC ≤ 125°C unless otherwise noted.
Where applicable, typical values reflect the parameter’s approximate average value with VPWR = 13 V, TA = 25°C.
Characteristic
Symbol
Min
Typ
Max
–
–
1.4
–
1.0
–
–
–
–
0.5
–
1.0
2.5
3.5
4.2
35
55
70
Unit
POWER OUTPUT
RDS (ON)
Drain-to-Source ON Resistance
IOUT = 0.350 A, TJ = 125°C, VPWR = 13 V
IOUT = 0.350 A, TJ = 25°C, VPWR = 13 V
IOUT = 0.350 A, TJ = -40°C, VPWR = 13 V
Output Self Limiting Current High-Side and Low-Side Configurations
IOUT(LIM)
Output Fault Detection Voltage Threshold (Note 7)
VOUT(flt-th)
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Outputs Programmed OFF
Output Fault Detection Current @ Threshold, High-Side Configuration
Output OFF Open Load Detection Current, High-Side Configuration
20
30
50
65
100
160
40
75
135
40
45
55
µA
µA
IOCO
VDrain = 16 V, VSource = 0 V, Outputs Programmed OFF
Output Clamp Voltage Low-Side Drive
µA
IOCO
VDrain = 16 V, VSource = 0 V, Outputs Programmed OFF
Output OFF Open Load Detection Current, Low-Side Configuration
µA
IOUT(flt-th)
Outputs Programmed OFF
V
VOC(LSD)
ID = 10 mA
V
VOC(HSD)
Output Clamp Voltage High-Side Drive
-15
IS = -10 mA
Output Leakage Current High-Side and Low-Side Configurations
–
5
µA
IOUT(LKG)
VDD = 5.0 V, VDrain = 16 V, VSource = 0 V,
Open Load Detection Current Disabled
Overtemperature Shutdown Hysteresis (Note 8)
7.0
µA
–
Overtemperature Shutdown (Note 8)
–
IOUT(LKG)
VDD = 5.0 V, VDrain = 16 V, VSource = 0 V,
Open Load Detection Current Disabled
Output Leakage Current High-Side Configuration
-25
µA
–
Output Leakage Current Low-Side Configuration
-20
IOUT(LKG)
VDD = 0 V, VDrain = 16 V, VSource = 0 V
A
V
IOUT(flt-th)
Outputs Programmed OFF
Output Fault Detection Current @ Threshold, Low-Side Configuration
Ω
–
–
20
TLIM
155
–
185
°C
TLIM(hys)
5.0
10
15
°C
Notes
7. Output fault detection thresholds with outputs programmed OFF. Output fault detect thresholds are the same for output open and shorts.
8. This parameter is guaranteed by design but is not production tested.
33879
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STATIC ELECTRICAL CHARACTERISTICS (continued)
Characteristics noted under conditions of 3.1 V ≤ VDD ≤ 5.5 V, 5.5 V ≤ VPWR ≤ 18 V, -40°C ≤ TC ≤ 125°C, unless otherwise noted.
Typical values, where applicable, reflect the parameter’s approximate average value with VPWR = 13 V, TA = 25°C
Characteristic
Symbol
Min
Typ
Max
Unit
Input Logic High-Voltage Thresholds (Note 9)
VIH
0.7 x VDD
–
VDD + 0.3
V
Input Logic Low-Voltage Thresholds (Note 9)
VIL
GND - 0.3
–
0.2 x VDD
V
-10
–
10
30
45
100
DIGITAL INTERFACE
µA
I IN5, I IN6, I EN
IN5, IN6, EN Input Logic Current
IN5, IN6, EN = 0 V
µA
I IN5, I IN6,
IN5, IN6 Pull-Down Current
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0.8 V to 5.0 V
EN Pull-Down Current
µA
I EN
EN = 5.0 V
30
45
100
-10
–
10
-10
–
10
-30
–
-100
µA
I SCK, I DI, I TriDO
SCLK, DI Input, Tri-State DO Output
0 V to 5.0 V
CS Input Current
µA
ICS
CS = VDD
CS Pull-Up Current
µA
ICS
CS = 0 V
µA
ICS(LKG)
CS Leakage Current to VDD
–
–
10
VDD - 0.4
–
VDD
–
–
0.4
–
–
20
CS = 5.0 V, VDD = 0 V
DO High-State Output Voltage
V
VDOHIGH
IDO-HIGH = -1.6 mA
V
VDOLOW
DO Low-State Output Voltage
IDO-LOW = 1.6 mA
Input Capacitance on SCLK, DI, Tri-State DO, IN5, IN6, EN (Note 10)
CIN
pF
Notes
9. Upper and lower logic threshold voltage levels apply to DI, CS, SCLK, IN5, IN6, and EN.
10. This parameter is guaranteed by design but not production tested.
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DYNAMIC ELECTRICAL CHARACTERISTICS
Characteristics noted under conditions of 3.1 V ≤ VDD ≤ 5.5 V, 5.5 V ≤ VPWR ≤ 18 V, -40°C ≤ TC ≤ 125°C unless otherwise noted.
Where applicable, typical values reflect the parameter’s approximate average value with VPWR = 13 V, TA = 25°C.
Characteristic
Symbol
Min
Typ
Max
0.1
0.5
1.0
0.1
0.5
1.0
0.1
0.3
1.0
0.1
0.3
1.0
1.0
15
50
1.0
30
100
100
–
300
100
–
–
100
–
–
Units
POWER OUTPUT TIMING
Output Slew Rate Low-Side Configuration (Note 11)
t SR(rise)
RLOAD = 620 Ω, CL = 200 pF
Output Slew Rate Low-Side Configuration (Note 11)
t SR(fall)
RLOAD = 620 Ω, CL = 200 pF
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Output Rise Time High-Side Configuration (Note 11)
Output Turn ON Delay Time, High-Side and Low-Side Configuration
(Note 12)
t DLY(on)
Output Turn OFF Delay Time, High-Side and Low-Side Configuration
(Note 12)
t DLY(off)
Output Fault Delay Time (Note 13)
t FAULT
VDD or EN ≤ 0.2 V
V/µs
µs
µs
µs
µs
tPOR
Delay Time Required from Rising Edge of EN and VDD to SPI Active
Low-State Duration on VDD or EN for Reset
V/µs
t SR(fall)
RLOAD = 620 Ω, CL = 200 pF
Power-ON Reset Delay
V/µs
t SR(rise)
RLOAD = 620 Ω, CL = 200 pF
Output Fall Time High-Side Configuration (Note 11)
V/µs
t RESET
µs
Notes
11. Output slew rate respectively measured across a 620 Ω resistive load at 10 to 90 percent and 90 to 10 percent voltage points. CL Capacitor
is connected from Drain or Source output to Ground.
12. Output turn ON and OFF delay time measured from 50 percent rising edge of CS to the beginning of the 10 and 90 percent transition points.
13. Duration of fault before fault bit is set. Duration between access times must be greater than 300 µs to read faults.
33879
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DYNAMIC ELECTRICAL CHARACTERISTICS (continued)
Characteristics noted under conditions of 3.1 V ≤ VDD ≤ 5.5 V, 5.5 V ≤ VPWR ≤ 18 V, -40°C ≤ TC ≤ 125°C unless otherwise noted.
Where applicable, typical values reflect the parameter’s approximate average value with VPWR = 13 V, TA = 25°C.
Characteristic
Symbol
Min
Typ
Max
Units
f SPI
–
4.0
–
MHz
Falling Edge of CS to Rising Edge of SCLK (Required Setup Time)
t LEAD
100
–
–
ns
Falling Edge of SCLK to Rising Edge of CS (Required Setup Time)
t LAG
50
–
–
ns
DI to Falling Edge of SCLK (Required Setup Time)
t DI(su)
16
–
–
ns
Falling Edge of SCLK to DI (Required Hold Time)
t DI(HOLD)
20
–
–
ns
DI, CS, SCLK Signal Rise Time (Note 15)
t r (DI)
–
5.0
–
ns
DI, CS, SCLK Signal Fall Time (Note 15)
t f (DI)
–
5.0
–
ns
Time from Falling Edge of CS to DO Low Impedance (Note 16)
t DO(EN)
–
–
55
ns
Time from Rising Edge of CS to DO High Impedance (Note 17)
t DO(DIS)
–
–
55
ns
t VALID
–
25
55
ns
DIGITAL INTERFACE TIMING (Note 14)
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Recommended Frequency of SPI Operation (Note 14)
Time from Rising Edge of SCLK to DO Data Valid (Note 18)
Notes
14.
15.
16.
17.
18.
This parameter is guaranteed by design. Production test equipment uses 4.16 MHz, 5.5V/3.1V SPI interface.
Rise and Fall time of incoming DI, CS, and SCLK signals suggested for design consideration to prevent the occurrence of double pulsing.
Time required for output status data to be available for use at DO pin.
Time required for output status data to be terminated at DO pin
Time required to obtain valid data out from DO following the rise of SCLK.
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Timing Diagrams
CS
0.2 VDD
tlead
tlag
0.7 VDD
SCLK
0.2 VDD
tDI(su)
0.7 VDD
0.2 VDD
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DI
tDI(hold)
MSB in
tDO(en)
0.7 VDD
0.2 VDD
DO
tDO(dis)
tvalid
MSB out
LSB out
Figure 2. SPI Timing Diagram
tr(DI)
VDD = 5.0 V
0.7 VDD
SCLK
SCLK
33879
Under
Test
tf(DI)
< 50 ns
< 50 ns
3.3/5.0 V
50%
0.2 VDD
0V
DO
0.7 VDD
CL = 200 pF
0.2 VDD
DO
tr(DO)
(Low-to-High)
DO
NOTE: CL represents the total capacitance of the test
fixture and probe.
<50 ns
90%
3.3/5.0 V
0.7 VDD
10%
0V
tDO(en)
tDO(dis)
VTri-State
90%
10%
tDO(en)
tDO(dis)
90%
DO
VOL
tr(CS)
<50 ns
DO
(Tri-State to Low)
VOH
Figure 4. Valid Data Delay Time and Valid Time Waveforms
tf(CS)
0.2 VDD
tvalid
0.2 VDD
Figure 3. Valid Data Delay Time and Valid Time Test Circuit
CS
VOL
0.7 VDD
(High-to-Low)
VOH
10%
VOL
VOH
VTri-State
(Tri-State to High)
Figure 5. Enable and Disable Time Waveforms
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1.4
VPWR @ 18 V
19
VPWR @ 13 V
High Side Drive
1.2
18
1.0
RDS(ON) (Ω)
IPWR Current into VPWR Pin (mA)
20
17
16
15
0.8
0.6
0.4
14
-40 -25
0
25
50
75
100
125
-40 -25
TA, Ambient Temperature (°C)
1.4
VPWR @ 13 V
50
75
100
125
TA = 25°C
High Side Drive
1.2
5
10
4
8
3
6
2
4
1
2
1.0
RDS(ON) (Ω)
IPWR
IPWRCurrent
Currentinto
intoVV
Pin(uA)
(µA)
PWR
PWRPin
25
Figure 9. RDS(ON) vs. Temperature at 350 mA
Sleep State IPWR versus Temperature
7
14
6
12
0
TA, Ambient Temperature (°C)
Figure 6. IPWR vs. Temperature
0.8
0.6
0.4
0.2
-40 -25
-40 -25
0
0
25
50
75
100
25
50
75 100
TA, Ambient Temperature (°C)
TA Ambient Temperature
125
125
0
5
10
15
20
25
VPWR (V)
Figure 7. Sleep State IPWR vs. Temperature
Figure 10. RDS(ON) vs. VPWR at 350 mA
140
IPWR Current into VPWR Pin (µA)
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Typical Electrical Characteristics
TA = 25°C
120
100
80
60
40
20
0
5
10
15
20
25
VPWR
Figure 8. Sleep State IPWR vs. VPWR
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IOCO, Open Load (µA)
140
120
VPWR @ 16 V
100
80
60
40
20
-40 -25
0
25
50
75
100
125
TA, Ambient Temperature (°C)
Figure 11. Open Load Detection Current at Threshold
33879
12
VOUT(flt-th), Open Load Threshold (V)
Typical Electrical Characteristics (continued)
5.0
TA = 25°C
Open Load Detect Enabled
4.5
4.0
3.5
3.0
2.5
2.0
0
5
10
15
20
25
TA, Ambient Temperature (°C)
Figure 12. Open Load Detection Threshold vs.
Temperature
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SYSTEM/APPLICATION INFORMATION
FUNCTIONAL PIN DESCRIPTION
CS Pin
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The system MCU selects the 33879 with which to
communicate through the use of the chip select CS pin. Logic
low on CS enables the data output (DO) driver and allows data
to be transferred from the MCU to the 33879 and vice versa.
Data clocked into the 33879 is acted upon on the rising edge of
CS.
follows a first-in, first-out protocol with both input and output
words transferring the most significant bit (MSB) first.
EN Pin
To avoid any spurious data, it is essential the high-to-low
transition of the CS signal occur only when SPI clock (SCLK) is
in a logic low state.
The EN pin on the 33879 enables the device. With the EN pin
high, output drivers may be activated and open/short fault
detection performed and reported. With the EN pin low, all
outputs become inactive, Open Load Detection Current is
disabled, and the device enters sleep mode. The 33879 will
perform Power-ON Reset on rising edge of the enable signal.
SCLK Pin
IN5 and IN6 Pins
The SCLK pin clocks the internal shift registers of the 33879.
The serial data input (DI) pin is latched into the input shift
register on the falling edge of the SCLK. The serial data output
(DO) pin shifts data out of the shift register on the rising edge of
the SCLK signal. False clocking of the shift register must be
avoided to ensure validity of data. It is essential that the SCLK
pin be in a logic low state when the CS pin makes any transition.
For this reason, it is recommended the SCLK pin is commanded
to a logic low state when the device is not accessed (CS in logic
high state). With CS in a logic high state, signals present on
SCLK and DI are ignored and the DO output is tri-state.
The IN5 and IN6 command inputs allow outputs five and six
to be used in PWM applications. The IN5 and IN6 pins are
OR-ed with the Serial Peripheral Interface (SPI) command input
bits. For SPI control of outputs five and six, the IN5 and IN6 pins
should be grounded or held low by the microprocessor. When
using IN5 or IN6 to PWM the output, the control SPI bit must be
logic [0]. Maximum PWM frequency for each output is 2.0 kHz.
DI Pin
The DI pin is used for serial instruction data input. DI
information is latched into the input register on the falling edge
of SCLK. A logic high state present on DI will program a specific
output on. The specific output will turn on with the rising edge of
the CS signal. Conversely, a logic low state present on the DI
pin will program the output off. The specific output will turn off
with the rising edge of the CS signal. To program the eight
outputs and Open Load Detection Current on or off, send the DI
data beginning with the Open Load Detection Current bits,
followed by output eight, output seven, and so on to output one.
For each falling edge of the SCLK while CS is logic low, a data
bit instruction (on or off) is loaded into the shift register per the
data bit DI state. Sixteen bits of entered information is required
to fill the input shift register.
DO Pin
The DO pin is the output from the shift register. The DO pin
remains tri-state until the CS pin is in a logic low state. All faults
on the 33879 device are reported as logic [1] through the DO
data pin. Regardless of the configuration of the driver, open
loads and shorted loads are reported as logic [1]. Conversely,
normal operating outputs with non-faulted loads are reported as
logic [0]. Outputs programmed with Open Load Detection
Current disabled will report logic [0] in the off state. The first
eight positive transitions of SCLK will report logic [0] followed by
the status of the eight output drivers. The DI/DO shifting of data
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
VDD Pin
The VDD input pin is used to determine logic levels on the
microprocessor interface (SPI) pins. Current from VDD is used
to drive DO output and the pull-up current for CS. VDD must be
applied for normal mode operation. The 33879 device will
perform Power-ON Reset with the application of VDD.
VPWR Pin
The VPWR pin is battery input and Power-ON Reset to the
33879 IC. The VPWR pin has internal reverse battery protection.
All internal logic current is provided from the VPWR pin. The
33879 will perform Power-ON Reset with the application of
VPWR.
D1–D8 Pins
The D1 to D8 pins are the open-drain outputs of the 33879.
For high-side drive configurations, the drain pins are connected
to battery supply. In low-side drive configurations, the drain pins
are connected to the low side of the load. All outputs may be
configured individually as desired. When configured as low-side
drive, the 33879 limits the positive inductive transient to 45 V.
S1–S8 Pins
The S1 to S8 pins are the source outputs of the 33879. For
high-side drive configurations, the source pins are connected
directly to the load. In low-side drive configurations, the source
is connected to ground. All outputs may be configured
individually as desired. When high-side drive is used, the 33879
will limit the negative inductive transient to negative 20 V.
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13
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MCU INTERFACE DESCRIPTION
Introduction
The 33879 is an 8-output hardware-configurable power
switch with 16-bit serial control. A simplified block diagram of
the 33879 is shown in Figure 1 on page 2.
Freescale Semiconductor, Inc...
The 33879 device uses high-efficiency up-drain power
DMOS output transistors exhibiting low drain-to-source ON
resistance (RDS(ON) = 1.0 Ω at 25°C typical) and dense CMOS
control logic. All outputs have independent voltage clamps to
provide fast inductive turn-off and transient protection.
In operation, the 33879 functions as an 8-output serial switch
serving as a MCU bus expander and buffer with fault
management and fault reporting features. In doing so, the
device directly relieves the MCU of the fault management
functions. This device directly interfaces to an MCU using a SPI
for control and diagnostic readout. Figure 13 illustrates the
basic SPI configuration between an MCU and one 33879.
Figure 14 illustrates the daisy chain configuration using the
33879. Data from the MCU is clocked daisy chain through each
device while the CS bit is commanded low by the MCU. During
each clock cycle, output status from the daisy chain is
transferred to the MCU via the Master In Slave Out (MISO) line.
On rising edge of CS, command data stored in the input register
is then transferred to the output driver.
SCLK
Parallel Port
33879
CS
MC68HCxx
MISO
Microcontroller
DO
with
SPI Interface
DI
8 Outputs
MC68HCxx
Microcontroller
33879
Shift Register
Shift Register
MISO
DO
16 Bits
SCLK
CS
SCLK
DO
DI
DO
DI
8 Outputs
MOSI
16 Bits
Multiple 33879 devices can be controlled in a parallel input
fashion using the SPI. Figure 15 illustrates the control of
24 loads using three dedicated parallel MCU ports for chip
select.
33879
SCLK
Receive
Buffer
Parallel
Ports
8 Outputs
Figure 14. 33879 SPI System Daisy Chain
DI
MOSI
33879
33879
CS
MOSI
To
Logic
SCLK
MISO
CS
Figure 13. SPI Interface with Microcontroller
All inputs are compatible with 5.0 V and 3.3 V CMOS logic
levels and incorporate positive logic. When a SPI bit is
programmed to a logic [0], the corresponding output will be
OFF. Conversely, when a SPI bit is programmed to logic [1] the
output being controlled will be ON. Diagnostics are treated in a
similar manner. Outputs with a fault will feed back (via DO) a
logic [1] to the microcontroller, while normal operating outputs
will provide a logic [0].
MC68HCxx
Microcontroller
with
SPI Interface
DI
SCLK
DO
8 Outputs
CS
33879
DI
SCLK
DO
CS
8 Outputs
33879
Parallel
Ports
A
DI
B
SCLK
C
DO
8 Outputs
CS
Figure 15. Parallel Input SPI Control
33879
14
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
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SPI DEFINITION
On each SPI communication, a 16-bit command word is sent
to the 33879 and a 16-bit status word is received from the
33879. The MSB is sent and received first. As Table 1 shows,
the Command Register defines the position and operation the
33879 will perform on rising edge of CS. The Fault Register,
shown in Table 2, defines the previous state status of the output
driver. Table 3 identifies the type of fault and the method by
which the fault is communicated to the microprocessor.
Table 1. Command Register Definition
Freescale Semiconductor, Inc...
MSB
LSB
Bit 15
Bit 14
Bit 13
Bit 12
Bit 11
Bit 10
Bit 9
Bit 8
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
ON/OFF
Open
Load
Detect
8
ON/OFF
Open
Load
Detect
7
ON/OFF
Open
Load
Detect
6
ON/OFF
Open
Load
Detect
5
ON/OFF
Open
Load
Detect
4
ON/OFF
Open
Load
Detect
3
ON/OFF
Open
Load
Detect
2
ON/OFF
Open
Load
Detect
1
ON/OFF
OUT 8
ON/OFF
OUT 7
ON/OFF
OUT 6
ON/OFF
OUT 5
ON/OFF
OUT 4
ON/OFF
OUT 3
ON/OFF
OUT 2
ON/OFF
OUT 1
0 = Bits 0 to 7, Output commanded OFF.
0 = Bits 8 to 15, Open Load Detection Current OFF.
1 = Bits 0 to 7, Output commanded ON.
1 = Bits 8 to 15 Open Load Detection Current ON.
Table 2. Fault Register Definition
MSB
LSB
Bit 15
Bit 14
Bit 13
Bit 12
Bit 11
Bit 10
Bit 9
Bit 8
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
0
0
0
0
0
0
0
0
OUT 8
Status
OUT 7
Status
OUT 6
Status
OUT 5
Status
OUT 4
Status
OUT 3
Status
OUT 2
Status
OUT 1
Status
0 = Bits 0 to 7, No Fault at Output.
1 = Bits 0 to 7, Output Short-to-Battery, Short-to-GND, Open Load,
or TLIM.
Bits 8 to 15 will always return “0”.
Table 3. Fault Operation
Serial Output (DO) Pin Reports
Overtemperature
Fault reported by serial output (DO) pin.
Overcurrent
DO pin reports short to battery/supply or overcurrent condition.
Output ON Open Load Fault
Not reported.
Output OFF Open Load Fault
DO pin reports output OFF open load condition only with Open Load Detection Current enabled.
DO pin will report “0” for Output OFF Open Load Fault with Open Load Detection Current disabled.
Device Shutdowns
Overvoltage
Total device shutdown at VPWR = 27 V–30 V. Resumes normal operation with proper voltage. All
outputs assuming the previous state upon recovery from overvoltage.
Overtemperature
Only the output experiencing an overtemperature shuts down. Output assumes previous state upon
recovery from overtemperature.
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
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DEVICE OPERATION
Power Supply
SPI Integrity Check
The 33879 device has been designed with ultra-low sleep
mode currents. The device may enter sleep mode via the EN
pin or the VDD pin. In the sleep mode (EN or VDD ≤ 0.8 V), the
current consumed by the VPWR pin is less than 5.0 µA.
Checking the integrity of the SPI communication with the
initial power-up of the VDD and EN pins is recommended. After
initial system start-up or reset, the MCU will write one 32-bit
pattern to the 33879. The first 16 bits read by the MCU will be
8 logic [0]s followed by the fault status of the outputs. The
second 16 bits will be the same bit pattern sent by the MCU. By
the MCU receiving the same bit pattern it sent, bus integrity is
confirmed. Please note the second 16-bit pattern the MCU
sends to the device is the command word and will be
transferred to the outputs with rising edge of CS.
Freescale Semiconductor, Inc...
Placing the 33879 in sleep mode resets the internal registers
to the Power-ON Reset state. The reset state is defined as all
outputs off and Open Load Detection Current disabled.
To place the 33879 in the sleep mode, either command all
outputs off and apply logic low to the EN input pin or remove
power from the VDD supply pin. Prior to removing VDD from the
device, it is recommended that all control inputs from the MCU
be low.
Paralleling of Outputs
Using MOSFETs as an output switch conveniently allows the
paralleling of outputs for increased current capability. RDS(ON) of
MOSFETs have an inherent positive temperature coefficient
that provides balanced current sharing between outputs without
destructive operation. This mode of operation may be desirable
in the event the application requires lower power dissipation or
the added capability of switching higher currents. Performance
of parallel operation results in a corresponding decrease in
RDS(ON) while the output OFF Open Load Detection Currents
and the output current limits increase correspondingly.
Paralleling outputs from two or more different IC devices is
possible but not recommended.
Fault Logic Operation
Fault logic of the 33879 device has been greatly simplified
over other devices using SPI communications. As command
word one is being written into the shift register, a fault status
word is being simultaneously written out and received by the
MCU. Regardless of the configuration, with no outputs faulted
and Open Load Detection Current enabled, all status bits being
received by the MCU will be zero. When outputs are faulted (off
state open circuit or on state short circuit/overtemperature), the
status bits being received by the MCU will be one. The
distinction between open circuit fault and short/
overtemperature is completed via the command word. For
example, when a zero command bit is sent and a one fault is
received in the following word, the fault is open/short-to-battery
for high-side drive or open/short-to-ground for low-side drive. In
the same manner, when a one command bit is sent and a one
fault is received in the following word, the fault is a short-toground/overtemperature for high-side drive or short-to-battery/
overtemperature for low-side drive. The timing between two
write words must be greater than 300 µs to allow adequate time
to sense and report the proper fault status.
33879
16
Important A SCLK pulse count strategy has been
implemented to ensure integrity of SPI communications. SPI
messages consisting of 16 SCLK pulses and multiples of
8 clock pulses thereafter will be acknowledged. SPI messages
consisting of other than 16 + multiples of 8 SCLK pulses will be
ignored by the device.
Overtemperature Fault
Overtemperature detection and shutdown circuits are
specifically incorporated for each individual output. The
shutdown following an overtemperature condition is
independent of the system clock or any other logic signal. Each
independent output shuts down at 155°C to 185°C. When an
output shuts down owing to an overtemperature fault, no other
outputs are affected. The MCU recognizes the fault by a one in
the fault status register. After the 33879 device has cooled
below the switch point temperature and 15°C hysteresis, the
output will activate unless told otherwise by the MCU via SPI to
shut down.
Overvoltage Fault
An overvoltage condition on the VPWR pin will cause the
device to shut down all outputs until the overvoltage condition
is removed. When the overvoltage condition is removed, the
outputs will resume their previous state. This device does not
detect an overvoltage on the VDD pin. The overvoltage
threshold on the VPWR pin is specified as 27 V to 30 V, with
1.0 V typical hysteresis. A VPWR overvoltage detection is global,
causing all outputs to be turned OFF.
Output OFF Open Load Fault
An output OFF open load fault is the detection and reporting
of an open load when the corresponding output is disabled
(input bit programmed to a logic low state). The Output OFF
Open Load fault is detected by comparing the drain-to-source
voltage of the specific MOSFET output to an internally
generated reference. Each output has one dedicated
comparator for this purpose.
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
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An output OFF open load fault is indicated when the drain-tosource voltage is less than the output threshold voltage
(VOUT(flt-th)) of 2.5 V to 4.0 V. Hence, the 33879 will declare the
load open in the OFF state when the output drain-to-source
voltage is less than VOUT(flt-th).
Freescale Semiconductor, Inc...
This device has an internal 80 µA current source connected
from drain to source of the output MOSFET. The current source
may be programmed on or off via SPI. The Power-ON Reset
state for the current source is “off” and must be enabled via SPI.
To achieve low sleep mode quiescent currents, the Open Load
Detection Current source of each driver is switched off when
VDD or EN is removed.
During output switching, especially with capacitive loads, a
false output OFF open load fault may be triggered. To prevent
this false fault from being reported, an internal fault filter of
100 µs to 300 µs is incorporated. A false fault reporting is a
function of the load impedance, RDS(ON), COUT of the MOSFET,
as well as the supply voltage, VPWR. The rising edge of CS
triggers the built-in fault delay timer. The timer will time out
before the fault comparator is enabled and the fault is detected.
Once the condition causing the open load fault is removed, the
device will resume normal operation. The open load fault,
however, will be latched in the output DO register for the MCU
to read.
Shorted Load Fault
A shorted load (overcurrent) fault can be caused by any
output being shorted directly to supply, or an output
experiencing a current greater than the current limit.
There are two safety circuits progressively in operation
during load short conditions that provide system protection:
1. The device’s output current is monitored in an analog
fashion using SENSEFET approach and current limited.
2. The device’s output thermal limit is sensed and when
attained causes only the specific faulted output to shut
down. The output will remain off until cooled. The device
will then reassert the output automatically. The cycle will
continue until fault is removed or the command bit
instructs the output off. Shorted load faults will be
reported properly through SPI regardless of Open Load
Detection Current enable bits.
Undervoltage Shutdown
An undervoltage condition on VDD or VPWR will result in the
shutdown of all outputs. The VDD undervoltage threshold is
between 0.8 V and 3.0 V. VPWR undervoltage threshold is
between 3.0 V and 5.0 V. When the supplies fall below their
respective thresholds, all outputs are turned OFF. As both
supplies returns to normal levels, internal logic is reset and the
device resumes normal operation.
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
Output Voltage Clamp
Each output of the 33879 incorporates an internal voltage
clamp to provide fast turn-off and transient protection of each
output. Each clamp independently limits the drain-to-source
voltage to 45 V for low-side drive configurations and -20 V for
high-side drive configurations. The total energy clamped (E J)
can be calculated by multiplying the current area under the
current curve (I A) times the clamp voltage (V CL) (see
Figure 16).
Characterization of the output clamps, using a single pulse
non-repetitive method at 0.35 A, indicates the maximum energy
per output to be 50 mJ at 150°C junction temperature.
Drain-to-Source Clamp
Voltage (V CL = 45 V)
Drain Voltage
Drain Current
(I D = 0.3 A)
Drain-to-Source ON
Voltage (V DS(ON))
GND
Clamp Energy
(E J = I A x V CL)
Current
Area (I A)
Time
Drain-to-Source ON
Voltage (V DS(ON))
VS
GND
BAT
Time
Current
Area (I A)
Clamp Energy
(E J = I A x V CL)
Source Current
(I S = 0.3 A)
Source Clamp Voltage
(V CL = -15 V)
Source Voltage
Figure 16. Output Voltage Clamping
SPI Configurations
The SPI configuration on the 33879 device is consistent with
other devices in the Octal Serial Switch (OSS) family. This
device may be used in serial SPI or parallel SPI with the 33298
and 33291. Different SPI configurations may be provided. For
more information, contact Motorola Analog Products Division or
local Motorola representative.
Reverse Battery
The 33879 has been designed with reverse battery
protection on the VPWR pin.
All outputs consist of a power MOSFET with an integral
substrate diode. During the reverse battery condition, current
will flow through the load via the substrate diode. Under this
circumstance, relays may energize and lamps will turn on.
Where load reverse battery protection is desired, a reverse
battery blocking diode must be placed in series with the load.
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33879
17
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
EK (Pb-FREE) SUFFIX
DWB SUFFIX
32-LEAD SOIC WIDE BODY EXPOSED PAD
PLASTIC PACKAGE
CASE 1437-01
ISSUE O
10.3
7.6
7.4
C
5
Freescale Semiconductor, Inc...
1
B
2.65
2.35
9
30X
32
0.65
PIN 1 ID
4
B
9
B
16
11.1
10.9
CL
17
32X
2X 16 TIPS
0.3
SEATING
PLANE
A
5.15
0.10 A
A B C
A
(0.29)
C
BASE METAL
C
A
0.25
0.19
(0.203)
6
0.3
0.38
0.22
PLATING
A B C
0.13
5.3
4.7
M
C A
M
B
8
SECTION A-A
ROTATED 90 ° CLOCKWISE
6.4
5.7
0.3 A B C
NOTES:
1. ALL DIMENSIONS ARE IN MILLIMETERS.
2. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
3. DATUMS B AND C TO BE DETERMINED AT THE PLANE
WHERE THE BOTTOM OF THE LEADS EXIT THE
PLASTIC BODY.
4. THIS DIMENSION DOES NOT INCLUDE MOLD FLASH,
PROTRUSION OR GATE BURRS. MOLD FLASH,
PROTRUSION OR GATE BURRS SHALL NOT EXCEED
0.15 mm PER SIDE. THIS DIMENSION IS DETERMINED
AT THE PLANE WHERE THE BOTTOM OF THE LEADS
EXIT THE PLASTIC BODY.
5. THIS DIMENSION DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSIONS. INTERLEAD FLASH AND
PROTRUSIONS SHALL NOT EXCEED 0.25 mm PER
SIDE. THIS DIMENSION IS DETERMINED AT THE
PLANE WHERE THE BOTTOM OF THE LEADS EXIT
THE PLASTIC BODY.
6. THIS DIMENSION DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR PROTRUSION
SHALL NOT CAUSE THE LEAD WIDTH TO EXCEED 0.4
mm PER SIDE. DAMBAR CANNOT BE LOCATED ON
THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE
BETWEEN PROTRUSION AND ADJACENT LEAD
SHALL NOT LESS THAN 0.07 mm.
7. EXACT SHAPE OF EACH CORNER IS OPTIONAL.
8. THESE DIMENSIONS APPLY TO THE FLAT SECTION
OF THE LEAD BETWEEN 0.10 mm AND 0.3 mm FROM
THE LEAD TIP.
9. THE PACKAGE TOP MAY BE SMALLER THAN THE
PACKAGE BOTTOM. THIS DIMENSION IS
DETERMINED AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY EXCLUSIVE OF MOLD FLASH, TIE
BAR BURRS, GATE BURRS AND INTER-LEAD FLASH,
BUT INCLUDING ANY MISMATCH BETWEEN THE TOP
AND BOTTOM OF THE PLASTIC BODY.
R0.08 MIN
0.25
0°
GAUGE PLANE
8°
0°
MIN
0.1
0.0
0.9
0.5
SECTION B-B
VIEW C-C
33879
18
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
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NOTES
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
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33879
19
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MC33879