SQV90N06-05 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.005 RDS(on) () at VGS = 4.5 V 0.007 ID (A) • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd 90 Configuration • 100 % Rg and UIS Tested Single • Compliant to RoHS Directive 2002/95/EC TO-262 D 1 2 3 G S G D S Top View N-Channel MOSFET ORDERING INFORMATION Package TO-262 Lead (Pb)-free and Halogen-free SQV90N06-05-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Currenta TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C Operating Junction and Storage Temperature Range V 120 94 IS 120 IDM 480 IAS 75 EAS 280 PD TC = 125 °C UNIT 250 83 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountc Junction-to-Case (Drain) RthJA 40 RthJC 0.6 °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. S11-2028-Rev. B, 17-Oct-11 1 Document Number: 68874 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQV90N06-05 www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = 250 μA 60 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) - - ± 100 VGS = 0 V VDS = 60 V - - 1 VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C - - 250 VGS = 10 V VDS5 V 120 - - VGS = 10 V ID = 30 A - 0.003 0.005 VGS = 10 V ID = 30 A, TJ = 125 °C - - 0.008 VGS = 10 V ID = 30 A, TJ = 175 °C - - 0.0095 VGS = 4.5 V ID = 30 A - 0.004 0.007 - 110 - - 7190 8990 gfs VDS = 15 V, ID = 30 A V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and VGS = 0 V VGS = 10 V Rg VDS = 25 V, f = 1 MHz VDS = 30 V, ID = 90 A f = 1 MHz td(on) tr td(off) VDD = 30 V, RL = 0.33 ID 90 A, VGEN = 10 V, Rg = 2.5 tf - 830 1035 - 580 725 pF - 175 210 - 35 42 - 34 44 0.5 1.7 2.8 - 18 27 - 18 27 - 84 126 - 28 42 - - 480 A - 1.1 1.4 V nC ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 90 A, VGS = 0 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2028-Rev. B, 17-Oct-11 2 Document Number: 68874 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQV90N06-05 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 250 180 V GS = 10 V thru 5 V 150 I D - Drain Current (A) I D - Drain Current (A) 200 150 V GS = 4 V 100 50 120 T C = 25 °C 90 60 30 T C = 125 °C V GS = 3 V 0 T C = - 55 °C 0 0 4 8 12 16 20 0 1 V DS - Drain-to-Source Voltage (V) Output Characteristics 4 5 0.010 R DS(on) - On-Resistance (Ω) 200 g fs - Transconductance (S) 3 Transfer Characteristics 250 T C = - 55 °C 150 T C = 25 °C 100 T C = 125 °C 0.008 0.006 V GS = 4.5 V 0.004 V GS = 10 V 0.002 50 0.000 0 0 16 32 48 64 0 80 20 ID - Drain Current (A) 40 60 80 100 120 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 12 11 000 10 000 VGS - Gate-to-Source Voltage (V) ID = 90 A 9000 C - Capacitance (pF) 2 V GS - Gate-to-Source Voltage (V) 8000 Ciss 7000 6000 5000 4000 3000 Coss 2000 1000 Crss 10 8 V DS = 30 V 6 4 2 0 0 0 10 20 30 40 50 0 60 V DS - Drain-to-Source Voltage (V) 40 60 80 100 120 140 160 180 200 Qg - Total Gate Charge (nC) Capacitance S11-2028-Rev. B, 17-Oct-11 20 Gate Charge 3 Document Number: 68874 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQV90N06-05 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 80 100 ID = 10 mA T J = 25 °C 10 I S - Source Current (A) Breakdown Voltage BVDSS 77 74 71 68 T J = 150 °C 1 T J = - 50 °C 0.1 0.01 65 - 50 - 25 0 25 50 75 100 125 150 0.001 0.0 175 0.2 T J - Junction Temperature (°C) 0.6 0.8 1.0 1.2 V SD - Source-to-Drain Voltage (V) BVDSS vs. Junction Temperature Source Drain Diode Forward Voltage 0.05 0.8 0.4 0.04 VGS(th) Variance (V) R DS(on) - On-Resistance (Ω) 0.4 0.03 0.02 0 - 0.4 ID = 5 mA - 0.8 T J = 150 °C ID = 250 μA 0.01 - 1.2 T J = 25 °C 0.00 0 2 4 6 8 - 1.6 - 50 10 - 25 0 25 50 75 100 125 150 175 T J - Temperature (°C) V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 2.1 ID = 30 A 10 V (Normalized) R DS(on) - On-Resistance 1.8 1.5 4.5 V 1.2 0.9 0.6 - 50 - 25 0 25 50 75 100 125 150 175 T J - Junction Temperature (°C) On-Resistance vs. Junction Temperature S11-2028-Rev. B, 17-Oct-11 4 Document Number: 68874 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQV90N06-05 www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) IDM Limited 100 µs I D - Drain Current (A) 100 10 1 ms 10 ms 100 ms 1s 10 s, DC Limited by R DS(on)* 1 TC = 25 °C Single Pulse 0.1 0.01 0.01 0.1 1 BVDSS Limited 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 10 -1 10 -2 10 -3 10 -4 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S11-2028-Rev. B, 17-Oct-11 5 Document Number: 68874 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQV90N06-05 www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68874. S11-2028-Rev. B, 17-Oct-11 6 Document Number: 68874 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO−262: 3−LEAD A E E1 D D1 L2 F 2 E2 3 L1 1 L b(1) J1 e b e(1) c MILLIMETERS* Dim A b b(1) c D D1 e e(1) E E1 E2 F J1 L L1 L2 INCHES Min Max Min Max 4.32 4.70 0.170 0.185 0.64 1.00 0.025 0.039 1.14 1.40 0.045 0.055 0.36 0.50 0.014 0.020 8.64 9.65 0.340 0.380 5.59 6.10 0.220 0.240 2.41 2.67 0.095 0.105 4.95 5.33 0.195 0.210 10.03 10.41 0.395 0.410 7.87 8.64 0.310 0.340 9.02 9.53 0.355 0.375 1.14 1.40 0.045 0.055 2.41 2.79 0.095 0.110 13.08 14.22 0.515 0.560 - 3.81 - 0.150 1.02 1.40 0.040 0.055 ECN: T-02234—Rev. C, 14-Oct-02 DWG: 5855 *Use millimeters as the primary measurement Document Number: 71769 15-Oct-02 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000