SFH636 Vishay Semiconductors Optocoupler, High Speed Phototransistor Output, 1 Mbd, 10 kV/ms CMR, Split Collector Transistor Output FEATURES C 1 6 VCC A 2 5 E NC 3 4 • High speed connection optocoupler without base • Isolation test voltage: 5300 VRMS C • GaAlAs emitter • Integrated detector with photo diode and transistor • High data transmission rate: 1.0 MBit/s • TTL compatible i179064 • Open collector output DESCRIPTION The SFH636 is an optocoupler with a GaAlAs infrared emitting diode, optically coupled to an integrated photo detector consisting of a photo diode and a high speed transistor in a DIP-6 plastic package. The device is functionally similar to 6N136 except there is no base connection, and the electrical foot print is different. Noise and dv/dt performance is enhanced by not bringing out the base connection. Signals can be transmitted between two electrically separated circuits up to frequencies of 2.0 MHz. The potential difference between the circuits to be coupled should not exceed the maximum permissible reference. • CTR at IF = 16 mA, VO = 0.4 V, VCC = 4.5 V, Tamb = 25 °C: ≥ 19 % • Good CTR linearity relative to forward current • Low coupling capacitance • dV/dt: typ. 10 kV/µs • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATIONS • IGBT drivers • Data communications • Programmable controllers AGENCY APPROVALS • UL1577, file no. E52744 system code H or J, double protection • DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending available with option 1 ORDER INFORMATION PART REMARKS CTR ≥ 19 %, DIP-6 SFH636 SFH636-X006 CTR ≥ 19 %, DIP-6 400 mil (option 6) SFH636-X007 CTR ≥ 19 %, SMD-6 (option 7) SFH636-X009 CTR ≥ 19 %, SMD-6 (option 9) Note For additional information on the available options refer to option information. ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 3.0 V mA INPUT Reverse voltage DC forward current Surge forward current Power dissipation Document Number: 83681 Rev. 1.6, 11-Jan-08 tP ≤ 1.0 µs, 300 pulses/s IF 25 IFSM 1.0 A Pdiss 45 mW For technical questions, contact: [email protected] www.vishay.com 1 SFH636 Vishay SemiconductorsOptocoupler, High Speed Phototransistor Output, 1 Mbd, 10 kV/ms CMR, Split Collector Transistor Output ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT V OUTPUT Supply voltage VS - 0.5 to 30 Output voltage VO - 0.5 to 20 V Output current IO 8.0 mA Pdiss 100 mW VISO 5300 VRMS Power dissipation COUPLER Isolation test voltage between emitter and detector, refer to climate DIN 40046, part 2, Nov. 74 Creepage distance ≥7 mm Clearance distance ≥7 mm Ω VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to +100 °C Tj 100 °C Tsld 260 °C Isolation resistance Junction temperature Soldering temperature (2) max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL Forward voltage IF = 16 mA Reverse current VR = 3.0 V MIN. TYP. MAX. UNIT VF 1.5 1.8 V IR 0.5 10 µA INPUT Capacitance VR = 0 V, f = 1.0 MHz CO 125 pF Rthja 700 K/W IF = 0 V, VO (open), VCC = 15 V ICCH 0.01 IF = 0 V, VO (open), VCC = 15 V ICCH 0.01 2.0 µA IF = 0 V, VO (open), VCC = 5.5 V IOH 0.003 0.5 µA IOH 0.01 1.0 µA 50 µA Thermal resistance OUTPUT Logic high supply current Output current, output high Collector emitter capacitance IF = 0 V, VO (open), VCC =15 V VCE = 5.0 V, f = 1.0 MHz IOH 1.0 µA CCE 3.0 pF Rthja 300 K/W CC 0.6 pF IF = 16 mA, IO = 2.4 mA, VCC = 4.5 V VOL 0.1 IF = 16 mA, VO open, VCC = 15 V IDD 80 Thermal resistance COUPLER Coupling capacitance Collector emitter saturation voltage Supply current, logic low 0.4 V Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 83681 Rev. 1.6, 11-Jan-08 SFH636 Optocoupler, High Speed Phototransistor Output, Vishay Semiconductors 1 Mbd, 10 kV/ms CMR, Split Collector Transistor Output Vout IF C = 100 nF 1 6 2 5 5V VCC 100 Ω Pulse generator Zo = 50 Ω tr, tf = 5 ns Duty cycle = 10 % Period = 100 µs 3 1.5 V RL 4 0 t t PHL VO t PLH IF C L = 15 pF 16 mA t 0 isfh636_01 isfh636_02 Fig. 1 - Test Setup Fig. 2 - Switching Time Measurement CURRENT TRANSFER RATIO PARAMETER Current Transfer Ratio TEST CONDITION SYMBOL MIN. TYP. IF = 16 mA, VO = 0.4 V, VCC = 4.5 V IC/IF 19 30 IF = 16 mA, VO = 0.5 V, VCC = 4.5 V IC/IF 15 MAX. UNIT % % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Propagation delay time (high to low) IF = 16 mA, VCC = 5.0 V, RL = 1.9 kΩ tPHL 0.3 0.8 µs Propagation delay time (low to low) IF = 16 mA, VCC = 5.0 V, RL = 1.9 kΩ tPLH 0.3 0.8 µs VCM 10 % 90 % C = 100 nF IF B 1 6 2 5 3 4 VCC VO RL t tF tR 5V A VCC 90 % 10 % 0 VO A: IF = 0 mA 0 VO Pulse generator common mode A: IF = 16 mA VOL 0 isfh636_03 t t isfh636_04 Fig. 3 - Common Mode Transient Test Fig. 4 - Measurement Waveform of CMR COMMON MODE TRANSIENT IMMUNITY TEST CONDITION SYMBOL Common mode transient immunity (high) PARAMETER IO = 0 mA, VCM = 1500 VP-P, RL = 1.9 kΩ, VCC = 5.0 V CMH 10 kV/µs Common mode transient immunity (low) IO = 16 mA, VCM = 1500 VP-P, RL = 1.9 kΩ, VCC = 5.0 V CML 10 kV/µs Document Number: 83681 Rev. 1.6, 11-Jan-08 MIN. For technical questions, contact: [email protected] TYP. MAX. UNIT www.vishay.com 3 SFH636 Vishay SemiconductorsOptocoupler, High Speed Phototransistor Output, 1 Mbd, 10 kV/ms CMR, Split Collector Transistor Output TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 16 mA 14 10 20 mA 8 15 mA 6 10-1 10-2 5 mA 2 0 2 4 6 isfh636_05 8 10 12 V0 V 10-3 16 0.50 % 0.45 IO 30 IF 25 0.40 15 0.20 1.5 1.6 VCC = 5.0 V 0.15 10 0.10 5 0.05 0 isfh636_06 10 20 30 40 50 60 70 80 ºC 100 TA Fig. 6 - Permissible Forward Current of Emitting Diode vs. Ambient Temperature 120 mW 100 0 - 60 - 40 - 20 0 20 40 isfh636_09 60 TA ºC 100 Fig. 9 - Small Signal Transfer Ratio vs. Forward Current 1.3 Detector 6N 135 6N 136 1.2 NCTR 80 1.1 1.0 60 0.9 Emitter 40 0.8 20 0.7 0 isfh636_07 10 20 30 40 50 60 70 80 90 100 TA Fig. 7 - Permissible Total Power Dissipation vs. Ambient Temperature www.vishay.com 4 1.4 0.30 0.25 0 1.3 VF/V 0.35 20 0 1.2 Fig. 8 - Forward Current of Emitting Diode vs. Forward Voltage 40 mA 35 Ptot 0 isfh636_08 Fig. 5 - Output Characteristics-Output Current vs. Output Voltage IF 100 10 mA 4 0 101 35 mA 30 mA 25 mA 12 IF/mA I0 102 VCC = 5.0 V 40 mA IF = 16 mA, VO = 0.4 V, VCC = 5.0 V 0.6 - 60 - 40 - 20 isfh636_10 0 20 40 60 TA ºC 100 Fig. 10 - Current Transfer Ratio (Normalized) vs. Ambient Temperature For technical questions, contact: [email protected] Document Number: 83681 Rev. 1.6, 11-Jan-08 SFH636 Optocoupler, High Speed Phototransistor Output, Vishay Semiconductors 1 Mbd, 10 kV/ms CMR, Split Collector Transistor Output Fig. 12 - Delay Times vs. Ambient Temperature 10-6 V0 = VCC = 5.0 V, IF = 0 1.2 10-7 % 1.1 NCTR IOH 10-8 0.8 10-9 0.6 10-10 IF = 16 mA, VO = 0.4 V, 0.4 10-11 10-12 - 60 - 40 - 20 VCC = 5.0 V 0.2 0 20 40 isfh636_11 60 TA ºC 100 0 6N 135 6N 136 10-4 103 isfh636_13 10-2 IF A 10-1 Fig. 11 - Output Current (High) vs. Ambient Temperature Fig. 13 - Current Transfer Ratio (Normalized) vs. Forward Current 1400 ns 1200 tP 1000 IF = 16 mA, VCC = 5.0 V, RL = 4.1 kΩ, SFH636: RL = 1.9 kΩ tPLH 800 600 400 200 tPHL tPLH 6N 135 6N 136 tPHL 0 - 60 - 40 - 20 0 20 40 isfh636_12 60 TA ºC 100 PACKAGE DIMENSIONS in inches (millimeters) 3 2 1 4 5 6 Pin one ID 0.248 (6.30) 0.256 (6.50) ISO method A 0.335 (8.50) 0.343 (8.70) 0.039 (1.00) min. 0.048 0.300 (7.62) (0.45) typ. 0.022 (0.55) 0.130 (3.30) 0.150 (3.81) 18 ° 4° typ. 0.114 (2.90) 0.031 (0.80) min. 0.031 (0.80) 0.018 (0.45) 0.035 (0.90) 0.022 (0.55) 0.100 (2.54) typ. 0.130 (3.0) 3° to 9° 0.010 (0.25) typ. 0.300 to 0.347 (7.62 to 8.81) i178004 Document Number: 83681 Rev. 1.6, 11-Jan-08 For technical questions, contact: [email protected] www.vishay.com 5 SFH636 Vishay SemiconductorsOptocoupler, High Speed Phototransistor Output, 1 Mbd, 10 kV/ms CMR, Split Collector Transistor Output Option 6 Option 7 Option 9 0.407 (10.36) 0.391 (9.96) 0.307 (7.8) 0.291 (7.4) 0.300 (7.62) typ. 0.375 (9.53) 0.395 (10.03 ) 0.300 (7.62) ref. 0.028 (0.7) min. 0.315 (8.0) min. 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) www.vishay.com 6 0.331 (8.4) min. 0.406 (10.3) max. 0.180 (4.6) 0.160 (4.1) 0.0040 (0.102) 0.0098 (0.249) 0.012 (0.30 ) typ. 0.020 (0.51 ) 0.040 (1.02 ) 15° max. 0.315 (8.00) min. For technical questions, contact: [email protected] 18450 Document Number: 83681 Rev. 1.6, 11-Jan-08 SFH636 Optocoupler, High Speed Phototransistor Output, Vishay Semiconductors 1 Mbd, 10 kV/ms CMR, Split Collector Transistor Output OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number: 83681 Rev. 1.6, 11-Jan-08 For technical questions, contact: [email protected] www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1