H11D1/H11D2/H11D3/H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage FEATURES • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % • Good CTR linearly with forward current • Low CTR degradation A 1 6 B C 2 5 C NC 3 4 E • Very high collector emitter breakdown voltage - H11D1/H11D2, BVCER = 300 V - H11D3/H11D4, BVCER = 200 V • Isolation test voltage: 5300 VRMS • Low coupling capacitance • High common mode transient immunity • Package with base connection • Lead (Pb)-free component i179004 i179004 • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC DESCRIPTION AGENCY APPROVALS The H11D1/H11D2/H11D3/H11D4 are optocouplers with very high BVCER. They are intended for telecommunications applications or any DC application requiring a high blocking voltage. The H11D1/H11D2 are identical and the H11D3/H11D4 are identical. • UL1577, file no. E52744 system code H or J, double protection • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending available with option 1 • BSI IEC60950 IEC60065 • FIMKO APPLICATIONS • Telecommunications • Replace relays ORDER INFORMATION PART REMARKS H11D1 CTR > 20 %, DIP-6 H11D2 CTR > 20 %, DIP-6 H11D3 CTR > 20 %, DIP-6 H11D4 CTR > 20 %, DIP-6 H11D1-X007 CTR > 20 %, SMD-6 (option 7) H11D1-X009 CTR > 20 %, SMD-6 (option 9) H11D2-X007 CTR > 20 %, SMD-6 (option 7) H11D3-X007 CTR > 20 %, SMD-6 (option 7) Note For additional information on the available options refer to option information. Document Number: 83611 Rev. 1.5, 19-Nov-07 For technical questions, contact: [email protected] www.vishay.com 1 H11D1/H11D2/H11D3/H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V DC forward current IF 60 mA IFSM 2.5 A Pdiss 100 mW H11D1 VCE 300 V H11D2 VCE 300 V H11D3 VCE 200 V H11D4 VCE 200 V H11D1 VCBO 300 V H11D2 VCBO 300 V H11D3 VCBO 200 V H11D4 VCBO 200 V VBEO 7 V Collector current IC 100 mA Power dissipation Pdiss 300 mW VISO 5300 VRMS ≥ 0.4 mm Creepage distance ≥7 mm Clearance distance ≥7 mm t ≤ 10 µs Surge forward current Power dissipation OUTPUT Collector emitter voltage Collector base voltage Emitter base voltage COUPLER between emitter and detector, refer to climate DIN 50014, part 2, Nov. 74 Isolation test voltage Insulation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDE 0303, part 1 175 VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature range Tstg - 55 to + 150 °C Operating temperature range Tamb - 55 to + 100 °C Tj 100 °C Tsld 260 °C Isolation resistance Junction temperature Soldering temperature max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Ω Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 83611 Rev. 1.5, 19-Nov-07 H11D1/H11D2/H11D3/H11D4 Optocoupler, Phototransistor Output, Vishay Semiconductors With Base Connection, High BVCER Voltage ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. 1.1 1.5 UNIT INPUT Forward voltage IF = 10 mA VF Reverse voltage IR = 10 µA VR Reverse current Capacitance V 6 V VR = 6 V IR 0.01 VR = 0 V, f = 1 MHz CO 25 pF RthJA 750 K/W Thermal resistance 10 µA OUTPUT Collector emitter breakdown voltage ICE = 1 mA, RBE = 1 MΩ Emitter base breakdown voltage H11D1 BVCER 300 V H11D2 BVCER 300 V H11D3 BVCER 200 V H11D4 BVCER 200 V 7 IEB = 100 µA BVEBO Collector emitter capacitance VCE = 10 V, f = 1 MHz CCE Collector base capacitance VCB = 10 V, f = 1 MHz Emitter base capacitance VEB = 5 V, f = 1 MHz Thermal resistance V 7 pF CCB 8 pF CEB 38 pF Rth 250 K/W CC 0.6 pF COUPLER Coupling capacitance Current transfer ratio IF = 10 mA, VCE = 10 V, RBE = 1 MΩ IC/IF Collector emitter, saturation voltage IF = 10 mA, IC = 0.5 mA, RBE = 1 MΩ VCEsat VCE = 200 V, RBE = 1 MΩ Collector emitter, leakage current VCE = 300 V, RBE = 1 MΩ, Tamb = 100 °C 20 % 0.25 0.4 V nA H11D1 ICER 100 H11D2 ICER 100 nA H11D1 ICER 250 µA H11D2 ICER 250 µA Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER Current transfer ratio TEST CONDITION PART SYMBOL MIN. CTR 20 IF = 10 mA, VCE = 10 V, RBE = 1 MΩ TYP. MAX. UNIT % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL Turn-on time IC = 2 mA (to be adjusted by varying IF), RL = 100 Ω, VCC = 10 V MIN. TYP. MAX. UNIT ton 5 µs Rise time IC = 2 mA (to be adjusted by varying IF), RL = 100 Ω, VCC = 10 V tr 2.5 µs Turn-off time IC = 2 mA (to be adjusted by varying IF), RL = 100 Ω, VCC = 10 V toff 6 µs Fall time IC = 2 mA (to be adjusted by varying IF), RL = 100 Ω, VCC = 10 V tf 5.5 µs Note Switching times measurement-test circuit and waveforms Document Number: 83611 Rev. 1.5, 19-Nov-07 For technical questions, contact: [email protected] www.vishay.com 3 H11D1/H11D2/H11D3/H11D4 Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Vishay Semiconductors TYPICAL CHARACTERISTICS 1.2 30 1.0 25 0.8 20 ICE (mA) NTCR Tamb = 25 °C, unless otherwise specified 0.6 0.4 VCE = 10 V, normalized to IF = 10 mA, NCTR = f (IF) 0.2 0 ICE = f (VCE, IF) IF =100 µA 15 IF = 80 µA 10 IF = 60 µA 5 IF = 40 µA IF = 20 µA 0 10 -4 10 -3 -2 -1 10 10 IF (A) ih11d1_02 -2 10 10 10 0 101 102 VCE (V) ih11d1_05 Fig. 4 - Output Characteristics Fig. 1 - Current Transfer Ratio (typ.) 100 1.2 VF = f (IF, TA) f = 1 MHz, CCE = f (VCE) CCB = f (VCB), CEB = f (VEB) 90 25 °C 50 °C 75 °C 80 70 CXX (pF) VF (V) 1.1 1.0 CEB 60 50 40 CCB 30 20 CCE 10 0 0.9 10-1 100 101 102 IF (mA) ih11d1_03 10-2 100 10-1 101 102 VXX (V) ih11d1_06 Fig. 5 - Transistor Capacitances (typ.) Fig. 2 - Diode Forward Voltage (typ.) 10-6 20 ICE = f (VCE, IB) 17.5 IF = 0, RBE = 1 MΩ ICER = f (VCE) 10-7 15 IB =100 µA 10-8 12.5 IB = 80 µA 10 CCER (A) ICE (mA) -1 IB = 60 µA 7.5 5 IB = 40 µA 2.5 IB = 20 µA 10-9 10-10 10-11 0 10-12 10-2 ih11d1_04 10-1 100 101 VCE (V) Fig. 3 - Output Characteristics www.vishay.com 4 102 0 25 50 75 ih11d1_07 100 125 150 175 200 VCE (V) Fig. 6 - Collector Emitter Leakage Current (typ.) For technical questions, contact: [email protected] Document Number: 83611 Rev. 1.5, 19-Nov-07 H11D1/H11D2/H11D3/H11D4 Optocoupler, Phototransistor Output, Vishay Semiconductors With Base Connection, High BVCER Voltage 100 400 IF = f (TA) 90 80 300 Ptot (mW) 70 IF (mA) Ptot = f (TA) 350 60 50 40 30 250 200 transistor 150 100 20 10 50 0 0 0 10 20 30 40 50 60 70 80 90 100 0 TA (°C) ih11d1_08 diode 10 20 30 40 50 60 70 80 90 100 TA (°C) ih11d1_09 Fig. 7 - Permissible Loss Diode Fig. 8 - Permissible Power Dissipation Input 0 tpdoff tpdon RL IC 47 Ω toff ton IF VCC td Output VO GND tr ts tr 0 10 % 10 % 50 % 50 % 90 % 90 % ih11d1_01 Fig. 9 Switching Times Measurement-Test Circuit and Waveform Document Number: 83611 Rev. 1.5, 19-Nov-07 For technical questions, contact: [email protected] www.vishay.com 5 H11D1/H11D2/H11D3/H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage PACKAGE DIMENSIONS in inches (millimeters) 3 2 1 4 5 6 Pin one ID 0.248 (6.30) 0.256 (6.50) ISO Method A 0.335 (8.50) 0.343 (8.70) 0.300 (7.62) typ. 0.048 (0.45) 0.022 (0.55) 0.039 (1.00) min. 0.130 (3.30) 0.150 (3.81) 18° 4° typ. 0.031 (0.80) min. 0.031 (0.80) 0.035 (0.90) 0.018 (0.45) 0.022 (0.55) 0.100 (2.54) typ. 3°to 9° 0.114 (2.90) 0.130 (3.0) 0.010 (0.25) typ. 0.300 – 0.347 (7.62– 8.81) i178004 Option 7 Option 9 0.300 (7.62) typ. 0.375 (9.53) 0.395 (10.03) 0.300 (7.62) ref. 0.028 (0.7) min. 0.180 (4.6) 0.160 (4.1) 0.315 (8.0) min. 0.331 (8.4) min. 0.406 (10.3) max. www.vishay.com 6 0.0040 (0.102) 0.0098 (0.249) 0.012 (0.30) typ. 0.020 (0.51) 0.040 (1.02) 0.315 (8.00) min. 15° max. For technical questions, contact: [email protected] 18494 Document Number: 83611 Rev. 1.5, 19-Nov-07 H11D1/H11D2/H11D3/H11D4 Optocoupler, Phototransistor Output, Vishay Semiconductors With Base Connection, High BVCER Voltage OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number: 83611 Rev. 1.5, 19-Nov-07 For technical questions, contact: [email protected] www.vishay.com 7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1