TM
QFET
FQB3N60C
600V N-Channel MOSFET
Features
Description
• 3A, 600V, RDS(on) = 3.4Ω @VGS = 10 V
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
• Low gate charge ( typical 10.5 nC)
• Low Crss ( typical 5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
{
D
z
G
S
G
{
D2-PAK
z
z
FQB Series
{
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
FQB3N60C
Unit
600
V
3
1.8
A
A
12
A
(Note 1)
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
±30
V
150
mJ
IAR
Avalanche Current
(Note 1)
3
A
EAR
Repetitive Avalanche Energy
(Note 1)
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation
75
0.62
W
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°C
(TC = 25°C)
- Derate above 25°C
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
--
1.67
°C/W
RθJC
Thermal Resistance, Junction-to-Case
RθJA*
Thermal Resistance, Junction-to-Ambient*
--
40
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
62.5
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2006 Fairchild Semiconductor Corporation
FQB3N60C REV. A
1
www.fairchildsemi.com
FQB3N60C
January 2006
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQB3N60C
FQB3N60CTM
D2-PAK
330mm
24mm
800
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max Units
600
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
0.6
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
---
---
1
10
µA
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
2.0
--
4.0
V
--
2.8
3.4
Ω
--
3.5
--
S
--
435
565
pF
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 1.5A
gFS
Forward Transconductance
VDS = 40V, ID = 1.5A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
45
60
pF
--
5
8
pF
--
12
34
ns
--
30
70
ns
--
35
80
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300V, ID = 3A
RG = 25Ω
(Note 4, 5)
VDS = 480V, ID = 3A
VGS = 10V
(Note 4, 5)
--
35
80
ns
--
10.5
14
nC
--
2.1
--
nC
--
4.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
3
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
12
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 3A
--
--
1.4
V
trr
Reverse Recovery Time
--
260
--
ns
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 3A
dIF/dt =100A/µs
--
1.6
--
µC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 3A, VDD = 50V, L=30mH, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
600V N-Channel MOSFET REV. A
2
www.fairchildsemi.com
600V N-Channel MOSFET
Package Marking and Ordering Information
600V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
1
10
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10
1
ID, Drain Current [A]
ID, Drain Current [A]
10
Figure 2. Transfer Characteristics
0
o
150 C
o
25 C
o
-55 C
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
10
-1
10
0
10
10
1
0
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
1
10
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
10
8
VGS = 10V
6
4
VGS = 20V
2
0
10
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
※ Note : TJ = 25℃
0
-1
0
1
2
3
4
5
6
10
7
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
800
Capacitances [pF]
700
600
Coss
500
Ciss
VGS, Gate-Source Voltage [V]
C iss = C gs + C gd (C ds = shorted)
C oss = C ds + C gd
C rss = C gd
400
300
200
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
100
0
-1
10
10
VDS = 120V
VDS = 300V
8
VDS = 480V
6
4
2
※ Note : ID = 10A
0
10
0
10
1
600V N-Channel MOSFET REV. A
0
2
4
6
8
10
12
QG, Total Gate Charge [nC]
V DS, Drain-Source Voltage [V]
3
www.fairchildsemi.com
600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
♦ Notes :
0.9
1. VGS = 0 V
2. ID = 250 µA
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
♦ Notes :
0.5
1. VGS = 10 V
2. ID = 1.5 A
0.0
-100
200
-50
o
TJ, Junction Temperature [ C]
2
50
100
150
200
o
Figure 9. Maximum Safe Operating Area
10
0
TJ, Junction Temperature [ C]
Figure 10. Maximum Drain Current
vs. Case Temperature
Operation in This Area
is Limited by R DS(on)
3
100 us
1 ms
ID, Drain Current [A]
ID, Drain Current [A]
10 us
1
10
10 ms
DC
0
10
※ Notes :
-1
10
o
1. TC = 25 C
2
1
o
2. TJ = 150 C
3. Single Pulse
-2
10
0
10
1
2
10
0
25
3
10
10
50
VDS, Drain-Source Voltage [V]
75
100
125
150
TC, Case Temperature [℃]
Figure 11. Transient Thermal Response Curve
Zθ JC(t), Thermal Response
10
0
D = 0 .5
0 .2
※ N o te s :
1 . Z θ J C(t) = 1 .4 ℃ /W M a x.
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C(t)
0 .1
10
-1
0 .0 5
0 .0 2
PDM
0 .0 1
t1
s in g le p u ls e
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a ve P u ls e D u ra tio n [s e c ]
600V N-Channel MOSFET REV. A
4
www.fairchildsemi.com
600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
600V N-Channel MOSFET REV. A
5
www.fairchildsemi.com
600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
600V N-Channel MOSFET REV. A
6
www.fairchildsemi.com
600V N-Channel MOSFET
Mechanical Dimensions
D2-PAK
Dimensions in Millimeters
600V N-Channel MOSFET REV. A
7
www.fairchildsemi.com
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FAST®
ActiveArray™
FASTr™
Bottomless™
FPS™
Build it Now™
FRFET™
CoolFET™
GlobalOptoisolator™
CROSSVOLT™ GTO™
DOME™
HiSeC™
EcoSPARK™
I2C™
E2CMOS™
i-Lo™
EnSigna™
ImpliedDisconnect™
FACT™
IntelliMAX™
FACT Quiet Series™
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μSerDes™
ScalarPump™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UltraFET®
UniFET™
VCX™
Wire™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I18