ROHM RFN10NS3S

Data Sheet
Super Fast Recovery Diode
RFN10NS3S
lSeries
Standard Fast Recovery
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
RFN10
NS3S
lApplications
General rectification
①
lFeatures
1)Low switching loss
2)High current overload capacity
3)Cathode common single type
lStructure
②
ROHM : LPDS
JEITA : TO263S
lConstruction
Silicon epitaxial planer
①
Manufacture Year, Week and Day
①
③
lTaping dimensions (Unit : mm)
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
VRM
Repetitive peak reverse voltage
VR
Reverse voltage
Average rectified forward current
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Conditions
Duty≤0.5
Direct voltage
60Hz half sin wave resistive load
Tc=88°C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C (*)
Limits
350
350
10
Unit
V
V
A
100
A
150
-55 to +150
C
C
(*) 1-3pin common circuit
lElectrical characteristics (Tj=25C)
Parameter
Symbol
VF
Forward voltage
Conditions
IF=10A
Min.
Typ.
Max.
Unit
－
1.25
1.5
V
Reverse current
IR
VR=350V
－
0.05
10
μA
Reverse recovery time (*)
trr
IF=0.5A,IR=1A,Irr=0.25×IR
－
22
30
ns
junction to case
－
－
4.0
°C/W
Thermal resistance
Rth(j-c)
(*) Design assurance without measurement.
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.10 - Rev.A
100000
100
10
Tj=150°C
10000
Tj=125°C
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
Data Sheet
RFN10NS3S
Tj=150°C
Tj=75°C
1
Tj=25°C
Tj=125°C
1000
Tj=75°C
100
10
Tj=25°C
1
0.1
0
500
1000
1500
2000
0
2500
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
50
100
150
200
250
FORWARD VOLTAGE:VF(mV)
f=1MHz
Tj=25°C
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
350
1250
1000
100
10
1
Tj=25°C
IF=10A
n=20pcs
1200
1150
1100
1050
AVE:1091.5mV
1000
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
1000
180
Tj=25°C
VR=350V
n=20pcs
100
10
AVE:31.8nA
Ta=25°C
f=1MHz
VR=0V
n=10pcs
175
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
300
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
170
165
160
155
AVE:161.2pF
150
145
1
140
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.10 - Rev.A
300
30
Tj=25°C
IF=0.5A
IR=1.0A
Irr=0.25×IR
n=10pcs
REVERSE RECOVERY TIME:trr(ns)
1cyc
280
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT:IFSM(A)
Data Sheet
RFN10NS3S
IFSM
8.3ms
260
240
2pi
220
AVE:224.5A
200
3pi
1pi
180
1-3pin shorted
25
20
15
10
AVE:18.5ns
5
0
160
IFSM DISPERSION MAP
trr DISPERSION MAP
1000
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1000
100
2pi
10
IFSM
1pi
8.3ms
3pi
100
2pi
10
IFSM
8.3ms
1pi
time
1-3pin shorted
1cyc.
1-3pin shorted
1
1
1
10
100
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
20
10
Rth(j-c)
16
14
12
10
AVE：13.8kV
8
6
AVE：0.73kV
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
18
4
3pi
1
2
0
C=200pF
R=0Ω
0.1
0.001
C=100pF
R=1.5kΩ
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
0.01
3/4
2011.10 - Rev.A
Data Sheet
RFN10NS3S
18
25
D.C.
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
FORWARD POWER
DISSIPATION:Pf(W)
D=0.5
half sin wave
D=0.2
D=0.1
10
0A
Io
0V
VR
D=0.8
20
15
D.C.
16
D=0.8
D=0.05
5
t
14
12
T
D=0.5
D=t/T
VR=280V
Tj=150°C
10
half sin wave
8
6
D=0.2
4
D=0.1
D=0.05
2
0
0
0
2
4
6
8
10
12
14
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
16
0
18
0A
Io
0V
VR
t
18
T
D.C.
16
30
60
90
120
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
D=t/T
VR=280V
Tj=150°C
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
D=0.8
14
12
D=0.5
10
half sin wave
8
6
D=0.2
4
D=0.1
D=0.05
2
0
0
30
60
90
120
150
CASE TEMPERATURE:Tl(°C)
DERATING CURVE (Io-Tl)
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.10 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A