ROHM RFUS20NS6S

Data Sheet
Super Fast Recovery Diode
RFUS20NS6S
Series
Ultra Fast Recovery
Dimensions(Unit : mm)
Land size figure(Unit : mm)
Applications
General rectification
Features
1)Ultra low switching loss
2)High current overload capacity
3)Cathode common single type
②
Structure
①
Construction
Silicon epitaxial planer
Taping dimensions(Unit : mm)
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
VRM
VR
Average rectified forward current
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Electrical characteristics(Tj=25C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Thermal resistance
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© 2011 ROHM Co., Ltd. All rights reserved.
③
Conditions
Limits
Unit
Duty0.5
Direct voltage
600
600
V
V
20
A
100
A
150
55 to 150
C
C
60Hz half sin wave resistive load ,
Tc=36C
1/2 Io per diode
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
Symbol
VF
Conditions
Min.
IF=20A
IR
VR=600V
IF=0.5A,IR=1A,Irr=0.25×IR
trr
Rth(j-c)
junction to case
1/3
Typ.
Max.
Unit
-
2.4
2.8
-
0.05
23
-
10
35
2
V
μA
ns
C/W
2011.06 - Rev.A
Data Sheet
RFUS20NS6S
Electrical characteristic curves
100
1000000
1000
10
100000
REVERSE CURRENT : IR(nA)
Tj=25C
Tj=75C
1
10000
Tj=75C
1000
100
1
0
1000
2000
3000
0
4000
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
50
100
150
200
250
300
10
0
2200
AVE : 2264mV
2100
Tｊ=25C
VR=600V
n=20pcs
AVE : 71.5nA
10
VF DISPERSION MAP
8.3ms
200
150
AVE : 144.5A
50
REVERSE RECOVERY TIME : trr(ns)
1cyc
550
30
AVE : 492pF
450
400
1000
25
AVE : 26.1ns
20
Tｊ=25C
IF=0.5A
IR=1A
Irr=0.25×IR
n=10pcs
15
10
5
100
10
IFSM
8.3ms
8.3ms
1cyc.
1
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
IFSM DISRESION MAP
5
1000
25
500
0
0
20
Ct DISPERSION MAP
30
IFSM
15
Ta=25C
f=1MHz
VR=0V
n=10pcs
IR DISPERSION MAP
300
10
600
1
2000
100
5
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
2300
REVERSE CURRENT : IR(nA)
Tｊ=25C
IF=10A
n=20pcs
250
100
350
100
2400
f=1MHz
Tj=25C
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
2500
FORWARD VOLTAGE : V F(mV)
Tj=25C
10
0.1
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT : I FSM(A)
Tj=125C
PEAK SURGE
FORWARD CURRENT : I FSM(A)
FORWARD CURRENT : I F(A)
Tj=150C
Tj=150C
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
Tj=125C
100
10
time
100
4
3.5
3
AVE : 3.76kV
2.5
2
1.5
1
0.5
AVE : 0.94kV
0
10
1
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
100
C=100pF
R=1.5k
C=200pF
R=0
ESD DISPERSION MAP
2/3
TRANSIENT
THAERMAL IMPEDANCE:Rth (C/W)
IFSM
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
4.5
Rth(j-c)
1
0.1
0.001
0.01
0.1
1
10
100
1000
TIME : t(s)
Rth-t CHARACTERISTICS
2011.06 - Rev.A
90
35
D.C.
80
D=0.5
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
FORWARD POWER
DISSIPATION : Pf(W)
30
half sin wave
60
D=0.2
50
D=0.1
40
Io
0A
D=0.8
70
Data Sheet
RFUS20NS6S
D=0.05
30
20
10
0
0V
D.C.
t
D=t/T
D=0.8
25
VR
T
VR=480V
Tj=150C
D=0.5
20
half sin wave
15
D=0.2
10
D=0.1
5
D=0.05
0
0
5
10
15
20
25
30
35
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
0
30
60
90
120
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
3/3
150
2011.06 - Rev.A
Notice
Notes
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R1120A