PD-95743 IRGP4050PbF PDP Switch Features § § § § § § § Key parameters optimized for PDP sustain & Energy recovery applications 104A continuous collector current rating reduces component count High pulse current rating makes it ideal for capacitive load circuits Low temperature co-efficient of VCE (ON) ensures reduced power dissipation at operating junction temperatures Reverse voltage avalanche rating improves the robustness in sustain driver application Short fall & rise times for fast switching Lead-Free C VCES = 250V VCE(on) typ. = 1.64V G @VGE = 15V, IC = 30A E n-channel Description This IGBT is specifically designed for sustain & energy recovery application in plasma display panels. This IGBT features low VCE (ON) and fast switching times to improve circuit efficiency and reliability. Low temperature co-efficient of VCE (ON) makes this IGBT an ideal device for PDP sustain driver application. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load current c d Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy e Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Solder Temperature Range, for 10 sec. Max. Units 250 104* 56 208 290 ±20 1240 330 130 -55 to +150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case) Thermal / Mechanical Characteristics Min. Typ. Max. Units RθJC RθCS RθJA Junction-to-Case- IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Parameter ––– ––– ––– ––– 0.24 ––– 0.38 ––– 40 °C/W Wt Weight ––– 6 (0.21) ––– g (oz.) *Package limited to 60A. 1 www.irf.com 8/23/04 IRGP4050PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltage V(BR)CES V(BR)ECS Emitter-to-Collector Breakdown Voltage ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage f VCE(on) Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ Gate Threshold Voltage Threshold Voltage temp. coefficient gfe ICES Forward Transconductance Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current g 250 18 — — — — 3.0 — 34 — — — — Conditions — — V VGE = 0V, IC = 250µA — — V VGE = 0V, IC = 1.0A 8.2 — mV/°C VGE = 0V, IC = 1mA IC = 30A 1.64 1.90 IC = 56A 2.04 — V VGE = 15V IC = 104A, TJ = 150°C See Fig. 2, 5 2.60 — VCE = VGE, IC = 250µA — 6.0 -11 — mV/°C VCE = VGE, IC = 0.25mA 51 — S VCE = 100V, IC = 56A VGE = 0V, VCE = 250V — 250 — 2.0 µA VGE = 0V, VCE = 10V VGE = 0V, VCE = 250V, TJ = 150°C — 5000 — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc td(on) tr td(off) tf Eon Eoff ETS td(on) tr td(off) tf ETS LE Cies Coes Cres Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units — — — — — — — — — — — — — — — — — — — 230 37 78 37 35 120 59 45 125 170 35 35 130 120 280 13 4650 480 92 350 56 120 — — 180 89 — — — — — — — — — — — — nC ns Conditions IC = 56A VCC = 200V See Fig. 8 VGE = 15V TJ = 25°C IC = 30A, VCC = 180V VGE = 15V, RG = 5.0Ω Energy losses include "tail" See Fig. 9, 10, 14 µJ ns µJ nH pF TJ = 150°C IC = 30A, VCC = 180V VGE = 15V, RG = 5.0Ω Energy losses include "tail" See Fig. 11, 14 Measured 5mm from package VGE = 0V VCC = 30V, See Fig. 7 f = 1.0MHz Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES ), VGE = 20V, L = 10µH, RG = 5.0Ω, (See fig. 13a). Repetitive rating; pulse width limited by maximum junction temperature. Pulse width ≤ 2.5ms; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. 2 www.irf.com IRGP4050PbF 140 Triangular wave: For both: Duty cycle : 50% Tj = 125°C Tsink = 90°C Gate drive as specified Power Dissipation = 73W 120 Clamp voltage: 80% of rated Load Current ( A ) 100 80 60 Square wave: 60% of rated voltage 40 20 Ideal diodes 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 IC, Collector-to-Emitter Current (A) IC, Collector-to-Emitter Current (A) 1000 T J = 150°C 100 10 T J = 25°C 1 V GE = 15V 20µs PULSE WIDTH 0.1 0.1 1 10 V CE, Collecto-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com 100 100 10 T J = 150°C 1 TJ = 25°C 0.1 VCC = 50V 20µs PULSE WIDTH 0.01 0 2 4 6 8 10 12 14 16 VGE, Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRGP4050PbF 4.0 LIMITED BY PACKAGE VCE , Collector-to Emitter Voltage (V) Maximum DC Collector Current (A) 120 100 80 60 40 20 80µs PULSE WIDTH 50 75 100 125 IC = 112A 3.0 IC = 56A 2.0 IC = 28A 0 25 VGE = 15V 1.0 150 -60 -40 -20 T C , Case Temperature (°C) 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response ( Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 τJ 0.02 0.01 R1 R1 τJ τ1 τ1 R2 R2 τ2 τ3 τ2 τC τ τ3 Ri (°C/W) τi (sec) 0.0906 0.000350 0.0906 0.002209 0.2003 Ci= τi/Ri Ci= i/Ri 0.001 R3 R3 SINGLE PULSE ( THERMAL RESPONSE ) 0.028536 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRGP4050PbF 100000 VGE, Gate-to-Emitter Voltage (V) C oes = C ce + Cgc 10000 Capacitance (pF) 16 VGS = 0V, f = 1 MHZ C ies = C ge + C gd, C ce SHORTED C res = C gc Cies 1000 Coes 100 Cres VCES = 200V IC = 56A 14 12 10 8 6 4 2 10 0 0 50 100 150 200 0 VCE, Collector-toEmitter-Voltage(V) 7000 TJ = 25°C I C = 56A 200 RG = 5.0Ω V GE = 15V 6000 Total Swiching Losses (µJ) Total Swiching Losses (µJ) 2000 150 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 2400 2200 100 Q G, Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage VCE = 200V VGE = 15V 50 1800 1600 1400 1200 IC = 112A 5000 4000 3000 2000 1000 1000 800 0 IC = 56A IC = 28A 0 5 10 15 20 25 RG, Gate Resistance (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 30 -55 -5 45 95 145 T J, Juntion Temperature (°C) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRGP4050PbF 6000 1000 Total Swiching Losses (µJ) 5000 IC, Collector-to-Emitter Current (A) RG = 5.0Ω TJ = 150°C V CE= 200V V GE = 15V 4000 3000 2000 1000 100 SAFE OPERATING AREA 10 1 0 20 40 60 80 100 IC, Collecto-to-Emitter (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 VGE = 20V T J = 125° 120 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRGP4050PbF L D.U.T. RL = VC * 50V 0 - 480V 1000V 480V 4 X I C@25°C 480µF 960V c d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L Driver* D.U.T. Fig. 14a - Switching Loss Test Circuit VC 50V 1000V c d e * Driver same type as D.U.T., VC = 480V c d 90% e VC 10% 90% Fig. 14b - Switching Loss t d(off) 10% I C 5% Waveforms tf tr t d(on) t=5µs E on E off E ts = (Eon +Eoff ) www.irf.com 7 IRGP4050PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WIT H AS SEMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 IN T HE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" TO-247AC PART NUMBER INT ERNATIONAL RECTIFIER LOGO IRFPE30 56 AS SEMBLY LOT CODE 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/04 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/