PD - 97654C
AUTOMOTIVE GRADE
AUIRF7303Q
HEXFET® Power MOSFET
Features
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Advanced Planar Technology
Dual N Channel MOSFET
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Lead-Free, RoHS Compliant
Automotive Qualified*
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
Top View
V(BR)DSS
30V
RDS(on) max.
0.05Ω
ID
5.3A
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
SO-8
AUIRF7303Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
EAS(Tested)
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
c
e
d
g
Units
5.3
4.4
44
2.4
0.02
± 20
414
1160
1.6
W
W/°C
V
-55 to + 175
°C
Max.
Units
62.5
°C/W
A
mJ
V/ns
Thermal Resistance
Parameter
RθJA
Junction-to-Ambient
h
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
08/24/11
AUIRF7303Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
ΔV(BR)DSS/ΔTJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
30
–––
–––
–––
1.0
5.6
–––
–––
–––
–––
–––
0.03
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.05
0.08
3.0
–––
1.0
25
-100
100
Conditions
V
VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 2.7A
Ω
VGS = 4.5V, ID = 2.1A
V
VDS = VGS, ID = 100μA
S
VDS = 15V, ID = 2.7A
VDS = 24V, VGS = 0V
μA
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
nA
VGS = -20V
f
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
1.5
4.4
2.9
6.2
15
7.8
515
217
90
21
2.3
6.6
–––
–––
–––
–––
–––
–––
–––
Min.
Typ. Max. Units
nC
ns
pF
Conditions
ID = 2.7A
VDS = 15V
VGS = 10V
VDD = 15V
ID = 2.7A
RG = 6.8Ω
VGS =10V
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
f
f
Diode Characteristics
Parameter
IS
ISM
VSD
trr
Qrr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
c
–––
–––
3.0
A
–––
–––
44
–––
–––
–––
–––
26
50
1.0
39
75
Conditions
MOSFET symbol
showing the
integral reverse
D
G
S
V
ns
nC
p-n junction diode.
TJ = 25°C, IS = 2.7A, VGS = 0V
TJ = 25°C,IF = 2.7A
di/dt = 100A/μs
f
f
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 118mH, RG = 50Ω, IAS = 2.7A, VGS =10V. Part not recommended for use above this value.
ISD ≤ 2.7A, di/dt ≤ 389A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
This value determined from sample failure population, starting T J = 25°C, L = 118mH, RG = 50Ω, IAS = 2.7A, VGS =10V.
Surface mounted on FR-4 board, t ≤ 10sec..
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2
AUIRF7303Q
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
SO-8
MSL1
Class M2 (+/- 150V)
AEC-Q101-002
Human Body Model
Class H1A (+/- 500V)
AEC-Q101-001
Charged Device Model
Class C5 (+/- 1500V)
AEC-Q101-005
RoHS Compliant
†††
†††
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
††
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
†††
Highest passing voltage
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†††
3
AUIRF7303Q
100
100
10
BOTTOM
VGS
15V
10V
7.0V
4.5V
3.5V
3.0V
2.8V
2.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
1
2.5V
0.1
10
BOTTOM
VGS
15V
10V
7.0V
4.5V
3.5V
3.0V
2.8V
2.5V
2.5V
1
≤60μs PULSE WIDTH
Tj = 175°C
≤60μs PULSE WIDTH Tj = 25°C
0.01
0.1
1
10
0.1
0.1
100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
2.0
VDS = 15V
≤60μs PULSE WIDTH
10
TJ = 175°C
T J = 25°C
1
0.1
ID = 5.3A
VGS = 10V
1.5
1.0
0.5
1
2
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
10000
-60
20
60
100
140
180
Fig 4. Normalized On-Resistance Vs. Temperature
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
ID= 2.7A
VGS, Gate-to-Source Voltage (V)
C rss = C gd
C oss = Cds + C gd
1000
Ciss
Coss
Crss
100
-20
T J , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
C, Capacitance (pF)
10
Fig 2. Typical Output Characteristics
100
12.0
VDS= 24V
VDS= 15V
10.0
VDS= 6.0V
8.0
6.0
4.0
2.0
0.0
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
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1
V DS, Drain-to-Source Voltage (V)
0
5
10
15
20
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
4
AUIRF7303Q
100
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
T J = 175°C
10
T J = 25°C
1
100
100μs
1ms
10
10ms
1
DC
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0.01
1.7
0.10
VSD, Source-to-Drain Voltage (V)
1
10
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
6
EAS , Single Pulse Avalanche Energy (mJ)
1800
ID
0.9A
1.4A
BOTTOM 2.7A
1600
5
TOP
1400
ID, Drain Current (A)
100
VDS, Drain-to-Source Voltage (V)
4
1200
1000
3
2
1
0
800
600
400
200
0
25
50
75
100
125
150
175
25
T A , Ambient Temperature (°C)
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 9. Maximum Drain Current Vs. Ambient Temperature
Fig 10. Maximum Avalanche Energy vs. DrainCurrent
100
Thermal Response ( Z thJA ) °C/W
D = 0.50
10
1
0.20
0.10
0.05
0.02
0.01
0.1
0.01
0.001
0.0001
1E-006
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
AUIRF7303Q
Driver Gate Drive
D.U.T
+
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
• dv/dt controlled by R G
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
V DD
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
InductorCurrent
Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 12. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
D.U.T
RG
VGS
20V
DRIVER
L
VDS
tp
+
V
- DD
IAS
tp
A
0.01Ω
I AS
Fig 13a. Unclamped Inductive Test Circuit
V DS
V GS
Fig 13b. Unclamped Inductive Waveforms
RD
VDS
90%
D.U.T.
RG
+
-V DD
VGS
10%
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
Fig 14a. Switching Time Test Circuit
tr
t d(off)
tf
Fig 14b. Switching Time Waveforms
Id
Vds
Vgs
L
DUT
0
VCC
Vgs(th)
1K
Qgs1 Qgs2
Fig 15a. Gate Charge Test Circuit
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Qgd
Qgodr
Fig 15b. Gate Charge Waveform
6
AUIRF7303Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
6
7
6
5
H
1
2
3
0.25 [.010]
4
A
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
e
e1
8X b
0.25 [.010]
A
A1
MAX
0.25
.0098
0.10
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 B ASIC
e1
6X
MILLIMETERS
MIN
A
E
INCHES
DIM
B
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
C A B
8X L
8X c
7
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
AUIRF7303Q
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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8
AUIRF7303Q
Ordering Information
Base part number
AUIRF7303Q
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Package Type
Standard Pack
SO-8
Form
Tube
Tape and Reel
Complete Part Number
Quantity
95
4000
AUIRF7303Q
AUIRF7303QTR
9
AUIRF7303Q
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
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be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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10