PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C Features • • • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. Lead-Free VCES = 600V IC = 7.6A, TC=100°C G tsc > 10µs, TJ=150°C E n-channel VCE(on) typ. = 2.1V Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. D2Pak TO-220 IRGB4B60KD1 IRGS4B60KD1 TO-262 IRGSL4B60KD1 Absolute Maximum Ratings Parameter Max. Units 600 V VCES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current 11 IC @ TC = 100°C Continuous Collector Current 7.6 ICM 22 ILM Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current IF @ TC = 25°C Diode Continuous Forward Current 11 IF @ TC = 100°C Diode Continuous Forward Current 6.7 IFM Diode Maximum Forward Current 22 VGE Gate-to-Emitter Voltage ±20 V PD @ TC = 25°C Maximum Power Dissipation 63 W PD @ TC = 100°C Maximum Power Dissipation Operating Junction and TJ 31 TSTG c A 22 -55 to +175 Storage Temperature Range °C Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal / Mechanical Characteristics Min. Typ. Max. Units RθJC Junction-to-Case- IGBT Parameter ––– ––– 2.4 °C/W RθJC Junction-to-Case- Diode ––– ––– 6.1 RθCS Case-to-Sink, flat, greased surface ––– 0.50 ––– RθJA Junction-to-Ambient ––– ––– 62 RθJA Junction-to-Ambient (PCB Mount, steady state) ––– ––– 40 Wt Weight ––– 1.44 ––– www.irf.com d g 1 8/30/04 IRGB/S/SL4B60KD1PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — — — 0.28 — V Conditions V/°C VGE = 0V, IC = 1mA (25°C-150°C) IC = 4.0A, VGE = 15V, TJ = 25°C — 2.1 2.5 VCE(on) Collector-to-Emitter Voltage — 2.5 2.8 — 2.6 2.9 VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -8.1 — gfe Forward Transconductance — 1.7 — — 1.0 150 ICES Zero Gate Voltage Collector Current — 136 600 — 722 2400 VFM Diode Forward Voltage Drop — 1.4 2.0 — 1.3 1.8 IF = 4.0A, TJ = 150°C — 1.2 1.7 IF = 4.0A, TJ = 175°C — — ±100 IGES Gate-to-Emitter Leakage Current Ref.Fig. VGE = 0V, IC = 500µA V IC = 4.0A, VGE = 15V, TJ = 150°C V VCE = VGE, IC = 250µA 5,6,7 9,10,11 IC = 4.0A, VGE = 15V, TJ = 175°C 9,10,11 mV/°C VCE = VGE, IC = 1mA (25°C-150°C) S VCE = 50V, IC = 4.0A, PW = 80µs 12 VGE = 0V, VCE = 600V µA VGE = 0V, VCE = 600V, TJ = 150°C V IF = 4.0A VGE = 0V, VCE = 600V, TJ = 175°C nA 8 VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 12 — Qge Gate-to-Emitter Charge (turn-on) — 1.7 — Qgc Gate-to-Collector Charge (turn-on) — 6.5 — VGE = 15V Eon Turn-On Switching Loss — 73 80 IC = 4.0A, VCC = 400V Eoff Turn-Off Switching Loss — 47 53 Ref.Fig. IC = 4.0A nC µJ 23 VCC = 400V CT1 CT4 VGE = 15V, RG = 100Ω, L = 2.5mH e Etot Total Switching Loss — 120 130 TJ = 25°C td(on) Turn-On delay time — 22 28 IC = 4.0A, VCC = 400V tr Rise time — 18 23 td(off) Turn-Off delay time — 100 110 tf Fall time — 66 80 Eon Turn-On Switching Loss — 130 150 Eoff Turn-Off Switching Loss — 83 140 Etot Total Switching Loss — 220 280 TJ = 150°C td(on) Turn-On delay time — 22 27 IC = 4.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 2.5mH CT4 TJ = 150°C WF1 tr Rise time — 18 22 td(off) Turn-Off delay time — 120 130 tf Fall time — 79 89 Cies Input Capacitance — 190 — Coes Output Capacitance — 25 — Cres Reverse Transfer Capacitance — 6.2 — RBSOA Reverse Bias Safe Operating Area ns VGE = 15V, RG = 100Ω, L = 2.5mH CT4 TJ = 25°C IC = 4.0A, VCC = 400V µJ ns CT4 VGE = 15V, RG = 100Ω, L = 2.5mH e 13,15 WF1,WF2 14,16 WF2 VGE = 0V pF VCC = 30V 22 f = 1.0MHz TJ = 150°C, IC = 22A, Vp = 600V FULL SQUARE 4 VCC=500V,VGE = +15V to 0V,RG = 100Ω SCSOA Short Circuit Safe Operating Area 10 Erec Reverse Recovery Energy of the Diode — trr Diode Reverse Recovery Time — Irr Peak Reverse Recovery Current — Note to are on page 16 2 — — µs TJ = 150°C, Vp = 600V, RG = 100Ω CT3 VCC=360V,VGE = +15V to 0V WF4 100 µJ TJ = 150°C 93 — ns VCC = 400V, IF = 4.0A, L = 2.5mH 6.3 7.9 A VGE = 15V, RG = 100Ω 81 CT2 17,18,19 20,21 CT4,WF3 www.irf.com IRGB/S/SL4B60KD1PbF 70 12 60 10 50 Ptot (W) IC (A) 8 6 4 40 30 20 2 10 0 0 0 20 40 60 0 80 100 120 140 160 180 20 40 60 80 100 120 140 160 180 T C (°C) T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 100 100 10 10 IC A) IC (A) 100µs 1 1ms 1 10ms 0.1 DC 0 0.01 0 1 10 100 1000 VCE (V) Fig. 3 - Forward SOA TC = 25°C; TJ ≤ 150°C www.irf.com 10000 10 100 1000 VCE (V) Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V 3 IRGB/S/SL4B60KD1PbF 30 25 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 25 20 ICE (A) 20 ICE (A) 30 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 15 15 10 10 5 5 0 0 0 2 4 6 8 10 12 0 2 4 VCE (V) 30 25 15 IF (A) ICE (A) 12 35 10 20 -40°C 25°C 150°C 15 10 5 5 0 0 0 2 4 6 8 10 12 VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 80µs 4 10 Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 20 8 VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs 25 6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF (V) Fig. 8 - Typ. Diode Forward Characteristics tp = 80µs www.irf.com 20 20 18 18 16 16 14 14 12 10 ICE = 2.0A ICE = 4.0A 8 ICE = 8.0A VCE (V) VCE (V) IRGB/S/SL4B60KD1PbF 12 10 ICE = 2.0A ICE = 4.0A 8 ICE = 8.0A 6 6 4 4 2 2 0 0 5 10 15 20 5 10 VGE (V) 15 20 VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = -40°C Fig. 10 - Typical VCE vs. VGE TJ = 25°C 20 30 ID, Drain-to-Source Current (Α) 18 16 VCE (V) 14 12 10 ICE = 2.0A ICE = 4.0A 8 ICE = 8.0A 6 4 25 T J = 25°C 20 15 TJ = 150°C 10 5 2 0 0 5 10 15 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 150°C www.irf.com 20 0 5 10 15 20 VGS , Gate-to-Source Voltage (V) Fig. 12 - Typ. Transfer Characteristics VCE = 360V; tp = 10µs 5 IRGB/S/SL4B60KD1PbF 350 1000 300 Swiching Time (ns) Energy (µJ) td OFF EON 250 200 150 EOFF 100 tF 100 tdON 10 tR 50 0 1 1 2 3 4 5 6 7 8 9 10 0 2 Fig. 13 - Typ. Energy Loss vs. IC TJ = 150°C; L=2.5mH; VCE= 400V, RG= 100Ω; VGE= 15V 8 10 1000 300 EON Swiching Time (ns) 250 Energy (µJ) 6 Fig. 14 - Typ. Switching Time vs. IC TJ = 150°C; L=2.5mH; VCE= 400V RG= 100Ω; VGE= 15V 350 200 EOFF 150 100 tdOFF 100 tF tdON 50 tR 0 10 0 100 200 300 400 RG ( Ω) Fig. 15 - Typ. Energy Loss vs. RG TJ = 150°C; L=2.5mH; VCE= 400V ICE= 4.0A; VGE= 15V 6 4 IC (A) IC (A) 500 0 100 200 300 400 500 RG ( Ω) Fig. 16 - Typ. Switching Time vs. RG TJ = 150°C; L=2.5mH; VCE= 400V ICE= 4.0A; VGE= 15V www.irf.com IRGB/S/SL4B60KD1PbF 7 10 9 IRR (A) 7 6 5 RG = 100Ω 6 RG = 200Ω 5 IRR (A) 8 RG = 330Ω 4 4 RG = 470Ω 3 3 2 2 1 0 1 2 3 4 5 6 7 8 9 0 10 100 200 Fig. 17 - Typical Diode IRR vs. IF TJ = 150°C 400 500 Fig. 18 - Typical Diode IRR vs. RG TJ = 150°C; IF = 4.0A 700 7 600 6 200Ω Q RR (µC) 5 4 100Ω 8.0A 330Ω 500 IRR (A) 300 RG (Ω) IF (A) 470Ω 400 4.0A 300 2.0A 3 200 100 2 100 150 200 250 diF /dt (A/µs) Fig. 19- Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; IF = 4.0A; TJ = 150°C www.irf.com 300 0 50 100 150 200 250 300 350 400 diF /dt (A/µs) Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V;TJ = 150°C 7 IRGB/S/SL4B60KD1PbF Energy (µJ) 150 125 100Ω 100 200Ω 75 330Ω 470 Ω 50 25 0 0 1 2 3 4 5 6 7 8 9 10 IF (A) Fig. 21 - Typical Diode ERR vs. IF TJ = 150°C 16 1000 14 Cies 300V 400V 100 10 Coes VGE (V) Capacitance (pF) 12 Cres 10 8 6 4 2 0 1 0 20 40 60 80 VCE (V) Fig. 22- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 8 100 0 2 4 6 8 10 12 14 Q G , Total Gate Charge (nC) Fig. 23 - Typical Gate Charge vs. VGE ICE = 4.0A; L = 3150µH www.irf.com IRGB/S/SL4B60KD1PbF Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 τJ 0.05 0.02 0.01 R1 R1 τJ τ1 R2 R2 τ2 τ1 R3 R3 τ3 τ2 τ3 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.01 τC τ Ri (°C/W) τi (sec) 0.0429 0.000001 1.3417 0.000178 1.0154 0.000627 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( Z thJC ) D = 0.50 1 0.20 0.10 τJ 0.05 0.02 0.1 R1 R1 τJ τ1 R2 R2 R3 R3 τC τ τ2 τ1 τ2 τ3 τ3 Ci= τi/Ri Ci i/Ri 0.01 R4 R4 τ4 τ4 Ri (°C/W) 0.0904 1.6662 3.5994 0.7454 τi (sec) 0.000003 0.000117 0.001610 0.048846 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 9 IRGB/S/SL4B60KD1PbF L L VCC DUT 0 + - 80 V DUT 1K Fig.C.T.2 - RBSOA Circuit Fig.C.T.1 - Gate Charge Circuit (turn-off) diode clamp / DUT Driver L - 5V 360V DC 480V Rg DUT / DRIVER DUT VCC Rg Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit R= DUT VCC ICM VCC Rg Fig.C.T.5 - Resistive Load Circuit 10 www.irf.com IRGB/S/SL4B60KD1PbF 700 14 700 12 600 10 500 14 tf 600 tr 500 Ice 90% Ice 200 Vce (V) 6 5% Ice 400 8 10% Ice 5% Vce 300 6 4 200 4 100 2 100 2 0 0 0 Ice (A) 8 5% Vce 300 10 90% Ice Ice (A) Vce (V) 400 12 Vce Vce Ice Eoff Loss -100 -2 0.4 0.6 0.8 1 -100 0.35 1.2 0.55 Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150°C using Fig. CT.4 6 QR R tR R 400 4 -100 350 35 300 30 2 -6 0.15 0.25 -8 0.35 Time (uS) Fig. WF3- Typ. Diode Recovery Waveform @ TJ = 150°C using Fig. CT.4 www.irf.com 20 150 15 100 10 50 5 0 0 -4 -500 -600 0.05 -2 200 I(A) CE (A) 10% Peak IR R Peak IR R 25 Ice I -300 VCE (V) 0 If (A) -200 Vf (V) 40 Vce 250 -400 0.65 Time (uS) Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.4 0 -2 0.45 Time (uS) 100 0 Eon Loss -5 -50 30 40 50 60 70 Time (uS) Fig. WF4- Typ. S.C Waveform @ TC = 150°C using Fig. CT.3 11 IRGB/S/SL4B60KD1PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 3 4- DRAIN 14.09 (.555) 13.47 (.530) 1.40 (.055) 1.15 (.045) 4- COLLECTOR 4.06 (.160) 3.55 (.140) 3X 3X LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- COLLECTOR 2- DRAIN 3- SOURCE 3- EMITTER 4 - DRAIN HEXFET 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" Note: "P" in assembly line position indicates "Lead-Free" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE 12 PAR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C www.irf.com IRGB/S/SL4B60KD1PbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L O T CO D E 8 0 2 4 AS S E M B L E D O N W W 0 2 , 2 0 0 0 IN T H E AS S E M B L Y L IN E "L " IN T E R N AT IO N AL R E CT IF IE R L O GO N ote: "P " in as s em bly lin e po s i tion in dicates "L ead-F r ee" P AR T N U M B E R F 53 0 S AS S E M B L Y L O T CO D E D AT E CO D E Y E AR 0 = 2 0 0 0 W E E K 02 L IN E L OR IN T E R N AT IO N AL R E C T IF IE R L O GO AS S E M B L Y L OT COD E www.irf.com P AR T N U M B E R F 530S D AT E CO D E P = D E S IG N AT E S L E AD -F R E E P R O D U C T (O P T IO N AL ) Y E AR 0 = 2 0 0 0 W E E K 02 A = AS S E M B L Y S IT E CO D E 13 IRGB/S/SL4B60KD1PbF TO-262 Package Outline TO-262 Part Marking Information E X AMP L E : T H IS IS AN I R L 3 1 0 3L L OT COD E 1 78 9 AS S E M B L E D ON W W 1 9 , 1 9 9 7 IN T H E AS S E MB L Y L IN E "C" N ote: "P " in as s em bly line pos ition indicates "L ead-F ree" IN T E R N AT ION AL R E CT I F IE R L OGO AS S E MB L Y L OT COD E P AR T N U MB E R D AT E COD E Y E AR 7 = 1 9 97 WE E K 1 9 L IN E C OR IN T E R N AT ION AL R E CT I F IE R L OGO AS S E MB L Y L OT COD E 14 P AR T N U MB E R D AT E CO D E P = D E S I GN AT E S L E AD -F R E E P R OD U CT (OP T ION AL ) Y E AR 7 = 1 9 97 WE E K 19 A = AS S E MB L Y S IT E COD E www.irf.com IRGB/S/SL4B60KD1PbF D2Pak Tape & Reel Infomation TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 24.30 (.957) 23.90 (.941) 15.42 (.609) 15.22 (.601) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes: VCC = 80% (VCES), VGE = 15V, L = 100µH, RG = 100Ω. When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Energy losses include "tail" and diode reverse recovery, using Diode FD059H06A5. TO-220AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/04 www.irf.com 15 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/