SSM6K403TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS MOS SSM6K403TU ○ Power Management Switch Applications ○ High-Speed Switching Applications UNIT: mm 2.1±0.1 Ron = 43mΩ (max) (@VGS = 1.8V) Ron = 32mΩ (max) (@VGS = 2.5V) 2 5 3 4 0.7±0.05 Ron = 28mΩ (max) (@VGS = 4.0V) 6 +0.1 0.3-0.05 Low ON-resistance:Ron = 66mΩ (max) (@VGS = 1.5V) 1 0.166±0.05 • 0.65 0.65 1.5V drive 1.3±0.1 • 2.0±0.1 1.7±0.1 Absolute Maximum Ratings (Ta = 25˚C) (Note) Characteristic Symbol Rating Drain-source voltage VDSS 20 V Gate-source voltage VGSS ±10 V DC ID 4.2 Pulse IDP 8.4 Drain current Drain power dissipation 1,2,5,6 : Drain Unit A PD (Note1) 500 mW Channel temperature Tch 150 °C Storage temperature Tstg −55~150 °C UF6 3 : Gate 4 : source JEDEC ― JEITA ― TOSHIBA 2-2T1D weight: 7.0mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2) 1 2007-11-01 SSM6K403TU Electrical Characteristics (Ta = 25˚C) Characteristic Symbol Test Condition Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 V 20 ⎯ ⎯ V (BR) DSX ID = 1 mA, VGS = -10V 12 ⎯ ⎯ Drain cutoff current IDSS VDS =20 V, VGS = 0 V ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±1 μA 0.35 ⎯ 1.0 V 10 20 ⎯ S Drain-source breakdown voltage Gate threshold voltage Vth VDS = 3 V, ID = 1 mA Forward transfer admittance |Yfs| VDS = 3 V, ID = 3.0 A Drain-source ON-resistance RDS (ON) ID = 3.0 A, VGS = 4.0 V (Note2) ⎯ 19 28 ID = 3.0 A, VGS = 2.5 V (Note2) ⎯ 23 32 ⎯ 28 43 ⎯ 35 66 ⎯ 1050 ⎯ ⎯ 175 ⎯ ⎯ 160 ⎯ ⎯ 16.8 ⎯ ⎯ 12.1 ⎯ ID = 1.0 A, VGS = 1.8 V ID = 0.5 A, VGS = 1.5 V Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Switching time (Note2) (Note2) (Note2) VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 10 V, ID= 4.2 A VGS = 4 V ⎯ 4.7 ⎯ Turn-on time ton VDD = 10 V, ID = 1 A ⎯ 18 ⎯ Turn-off time toff VGS = 0~2.5 V, RG = 4.7 Ω ⎯ 32 ⎯ ⎯ -0.8 -1.2 Drain-source forward voltage VDSF ID = -4.2 A, VGS = 0 V (Note2) V mΩ pF nC ns V Note 2: Pulse test 2 2007-11-01 SSM6K403TU Switching Time Test Circuit (a) Test Circuit 2.5 V (b) VIN OUT IN RG 0 10 μs VDD = 10 V RG = 4.7 Ω D.U. < = 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C 2.5 V 0V 90% 10% VDD 90% (c) VOUT VDD 10% VDS (ON) tr ton Marking 6 tf toff Equivalent Circuit (top view) 5 4 6 5 4 1 2 3 KND 1 2 3 Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 3 2007-11-01 SSM6K403TU ID – VDS 10 V 10 Common Source Ta = 25 °C 1.5 V 1 2.5 V ID 4 VGS = 1.2 V 2 0 0 0.2 Common Source VDS = 3 V (A) 4.0 V 6 Drain current Drain current ID – VGS 1.8 V ID (A) 8 0.4 VDS Ta = 100 °C 25 °C 0.01 − 25 °C 0.001 0.0001 0 0.6 Drain-source voltage 0.1 1.0 (V) Gate-source voltage RDS (ON) – VGS ID =3.0 A Common Source Common Source Ta = 25°C Ta = 25°C 50 25 °C Ta = 100 °C Drain-source ON-resistance RDS (ON) (mΩ) Drain-source ON-resistance RDS (ON) (mΩ) (V) 100 50 1.8 V 1.5 V VGS = 4.0V 2.5 V − 25 °C 0 0 10 5 Gate-source voltage VGS 0 (V) 2 RDS (ON) – Ta ID (A) Vth – Ta Common Source Vth (V) Gate threshold voltage ID = 0.5 A / VGS = 1.5 V 1.0 A / 1.8 V 3.0 A / 4.0 V 3.0 A / 2.5 V 0 −50 8 6 1.0 Common Source 50 4 Drain current 100 Drain-source ON-resistance RDS (ON) (mΩ) VGS RDS (ON) – ID 100 0 2.0 0 50 Ambient temperature 100 Ta VDS = 3 V ID = 1 mA 0.5 0 −50 150 (°C) 0 50 Ambient temperature 4 100 Ta 150 (°C) 2007-11-01 SSM6K403TU (S) IDR – VDS |Yfs| – ID 100 10 (A) 10 VDS = 3 V Ta = 25°C Drain reverse current IDR ⎪Yfs⎪ 30 Forward transfer admittance Common Source 3 1 0.3 1 25 °C 0.1 Common Source VGS = 0 V Ta =100 °C D 0.01 IDR G −25 °C 0.1 0.01 1 0.1 Drain current ID 10 –0.5 (A) Common Source toff 500 300 Coss Crss 100 Common Source 50 Ta = 25°C f = 1 MHz VGS = 0 V 30 10 0.1 1 10 Drain-source voltage VDS 100 ton 10 tr 1 0.01 100 (V) VDD = 10 V VGS = 0 ∼ 2.5 V Ta = 25 °C RG = 4.7 Ω tf (ns) t Ciss 1000 Switching time (pF) (V) t – ID 3000 C VDS 1000 5000 Capacitance –1.5 –1.0 Drain-source voltage C – VDS 10000 S 0.001 0 0.1 Drain current 1 ID 10 (A) Dynamic Input Characteristic 10 ID = 4.2A 8 Ta = 25°C Gate-Source voltage VGS (V) Common Source 6 VDD=10V VDD=16V 4 2 0 0 10 20 40 30 Total Gate Charge Qg 50 (nC) 5 2007-11-01 SSM6K403TU rth – tw PD – Ta Drain power dissipation PD (mW) Transient thermal impedance Rth (°C/W) 100 Single pulse Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) 100 10 1 0.001 0.01 0.1 1 Pulse width 100 10 tw 1000 800 600 400 200 0 -40 1000 (s) Mounted on FR4 board 2 (25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm ) -20 0 20 40 60 80 Ambient temperature 6 100 120 140 160 Ta (°C) 2007-11-01 SSM6K403TU RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-11-01