SSM4K27CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ) SSM4K27CT ○ Switching Applications • Low on-resistance: Top view 0.05±0.04 Ron = 205 mΩ (max) (@VGS = 4.0 V) Ron = 260 mΩ (max) (@VGS = 2.5 V) 1.2±0.05 0.75 Ron = 390 mΩ (max) (@VGS = 1.8 V) Absolute Maximum Ratings (Ta = 25°C) Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ±12 V DC ID 0.5 Pulse IDP 1.0 PD (Note 1) 400 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current Drain power dissipation Note: 0.2±0.02 Side view +0.02 0.38 -0.03 Characteristics 0.8±0.05 0.5 0.3±0.02 Suitable for high-density mounting due to compact package 0.075±0.04 • Unit: mm A CST4 1 :Gate 2:Source 3,4:Drain JEDEC ⎯ Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA ⎯ temperature, etc.) may cause this product to decrease in the TOSHIBA 2-1M1A reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 1.1 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Marking (top view) 1 3 3 4 2 2 1 Polarity marking 1 2 3 4 SA 4 Electrode Layout (bottom view) Equivalent Circuit (top view) 4 3 1 2 Gate Source Drain Drain Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 SSM4K27CT Electrical Characteristics (Ta=25°C) Characteristics Symbol Gate leakage current Min Typ. Max Unit VGS = ±12 V, VDS = 0 − − ±1 μA V (BR) DSS ID = 1 mA, VGS = 0 20 − − V (BR) DSX ID = 1 mA, VGS = -12 V 10 − − IDSS VDS = 20 V, VGS = 0 − − 10 μA Vth VDS = 3 V, ID = 1 mA 0.5 − 1.1 V ⏐Yfs⏐ VDS = 3 V, ID = 0.25 A (Note2) 0.8 1.6 − S ID = 0.25 A, VGS = 4 V (Note2) ⎯ 175 205 ID = 0.25 A, VGS = 2.5 V (Note2) ⎯ 200 260 ID = 0.10 A, VGS = 1.8 V (Note2) ⎯ 250 390 IGSS Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source on-resistance RDS (ON) Test Condition V mΩ Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz − 174 − pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz − 25 − pF Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz − 31 − pF Switching time Turn-on time ton VDS = 10 V, ID = 0.25 A, − 16.4 − Turn-off time toff VGS = 0~2.5 V, RG = 4.7 Ω − 17 − ns Note2: Pulse test Switching Time Test Circuit (a) Test Circuit 2.5 V (b) VIN in 2.5 V out 0V RG 0 10 μs VDD (c) VOUT VDD = 10 V RG = 4.7 Ω D.U. < = 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C 90% 10% VDD VDS (ON) 90% 10% tr ton tf toff Precaution Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = 1mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Be sure to take this into consideration when using the device. 2 2007-11-01 SSM4K27CT ID – VDS ID – VGS 1.0 10000 (A) Drain current Drain current 1.8V 0.4 VGS = 1.2 V 0.2 0 0.2 0.4 0.6 0.8 25°C 1 −25°C VDS 0.01 0 1.0 (V) 0.2 0.4 0.8 0.6 1.0 Gate - Source voltage RDS (ON) – VGS 500 1.4 1.6 VGS (V) ID = 0.25 A Drain – Source on-resistance RDS (ON) (mΩ) 400 300 25°C 200 Ta = 85°C −25°C 100 0 2 4 6 Gate - Source voltage 8 10 250 VGS = 1.8 V 200 2.5V 150 4V 100 Common Source 50 0 12 Ta = 25°C 0 0.2 VGS (V) 0.4 0.6 Drain current ID RDS (ON) – Ta (A) Common Source Vth (V) 400 200 Gate threshold voltage ID = 0.1A / VGS = 1.8 V 300 0 −50 1.0 1.2 Common Source 100 0.8 Vth – Ta 500 Drain – Source on-resistance RDS (ON) (mΩ) 1.2 RDS (ON) – ID 300 Common Source Drain – Source on-resistance RDS (ON) (mΩ) Ta = 85°C 10 0.1 Drain - Source voltage 0 100 ID ID 2.5V 0.6 0 VDS = 3 V 1000 (mA) 4V 0.8 Common Source Common Source Ta = 25°C 0.25 A / 4 V 0.25 A / 2.5 V 0 50 Ambient temperature 100 Ta (°C) ID = 1mA 0.8 0.6 0.4 0.2 0 150 VDS = 3V 1.0 −25 0 25 50 75 Ambient temperature 3 100 Ta 125 150 (°C) 2007-11-01 |Yfs| – ID 30 C – VDS 500 300 10 Ciss (pF) ⎪Yfs ⎪ (S) SSM4K27CT C 1 0.3 0.1 Common Source Coss Crss 10 Common Source 5 Ta = 25°C f = 1 MHz VGS = 0 V 3 VDS = 3V 0.03 0.01 50 30 Capacitance Forward transfer admittance 3 100 Ta = 25°C 1 10 100 Drain current 1000 ID 1 0.1 10000 1 (mA) Dynamic Input Characteristic Common Source VDD = 10 V VGS = 0∼-2.5V Ta = 25°C RG = 4.7 Ω (ns) 8 7 t 6 VDD = 10 V 5 Switching time (V) VGS (V) t – ID 9 4 3 2 Common Source ID = 0.5 A Ta = 25°C 1 0 100 VDS 1000 10 Gate-Source voltage 10 Drain – Source voltage 0 1 2 4 3 Total gate charge Qg toff 100 tf 10 ton tr 5 1 0.01 (nC) 0.1 1 Drain current ID 10 (A) PD – Ta IDR – VDS 1.0 Drain power dissipation PD (W) Common Source VGS = 0V (A) IDR Drain reverse current 1.2 Ta = 25°C 0.8 D IDR G 0.6 S 0.4 0.2 0 Mounted on FR4 board 0.8 0.6 0.4 0.2 0 0 0 -0.2 -0.4 -0.6 Drain-Source voltage -0.8 VDS -1 (25.4 mm × 25.4 mm × 1.6 t, 2 Cu Pad: 645 mm ) 1 50 100 Ambient temperature Ta -1.2 150 (°C) (V) 4 2007-11-01 SSM4K27CT RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01