TOSHIBA SSM4K27CT

SSM4K27CT
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type (U-MOSⅢ)
SSM4K27CT
○ Switching Applications
•
Low on-resistance:
Top view
0.05±0.04
Ron = 205 mΩ (max) (@VGS = 4.0 V)
Ron = 260 mΩ (max) (@VGS = 2.5 V)
1.2±0.05
0.75
Ron = 390 mΩ (max) (@VGS = 1.8 V)
Absolute Maximum Ratings (Ta = 25°C)
Symbol
Rating
Unit
Drain-Source voltage
VDS
20
V
Gate-Source voltage
VGSS
±12
V
DC
ID
0.5
Pulse
IDP
1.0
PD (Note 1)
400
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain current
Drain power dissipation
Note:
0.2±0.02
Side view
+0.02
0.38 -0.03
Characteristics
0.8±0.05
0.5
0.3±0.02
Suitable for high-density mounting due to compact package
0.075±0.04
•
Unit: mm
A
CST4
1 :Gate 2:Source
3,4:Drain
JEDEC
⎯
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEITA
⎯
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-1M1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 1.1 mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
Marking (top view)
1
3
3
4
2
2
1
Polarity marking
1
2
3
4
SA
4
Electrode Layout (bottom view)
Equivalent Circuit (top view)
4
3
1
2
Gate
Source
Drain
Drain
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come
into direct contact with devices should be made of anti-static materials.
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SSM4K27CT
Electrical Characteristics (Ta=25°C)
Characteristics
Symbol
Gate leakage current
Min
Typ.
Max
Unit
VGS = ±12 V, VDS = 0
−
−
±1
μA
V (BR) DSS
ID = 1 mA, VGS = 0
20
−
−
V (BR) DSX
ID = 1 mA, VGS = -12 V
10
−
−
IDSS
VDS = 20 V, VGS = 0
−
−
10
μA
Vth
VDS = 3 V, ID = 1 mA
0.5
−
1.1
V
⏐Yfs⏐
VDS = 3 V, ID = 0.25 A
(Note2)
0.8
1.6
−
S
ID = 0.25 A, VGS = 4 V
(Note2)
⎯
175
205
ID = 0.25 A, VGS = 2.5 V
(Note2)
⎯
200
260
ID = 0.10 A, VGS = 1.8 V
(Note2)
⎯
250
390
IGSS
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
RDS (ON)
Test Condition
V
mΩ
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
−
174
−
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
−
25
−
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
−
31
−
pF
Switching time
Turn-on time
ton
VDS = 10 V, ID = 0.25 A,
−
16.4
−
Turn-off time
toff
VGS = 0~2.5 V, RG = 4.7 Ω
−
17
−
ns
Note2: Pulse test
Switching Time Test Circuit
(a) Test Circuit
2.5 V
(b) VIN
in
2.5 V
out
0V
RG
0
10 μs
VDD
(c) VOUT
VDD = 10 V
RG = 4.7 Ω
D.U. <
= 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
90%
10%
VDD
VDS (ON)
90%
10%
tr
ton
tf
toff
Precaution
Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = 1mA
for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a
lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Be sure to take this into consideration when using the device.
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SSM4K27CT
ID – VDS
ID – VGS
1.0
10000
(A)
Drain current
Drain current
1.8V
0.4
VGS = 1.2 V
0.2
0
0.2
0.4
0.6
0.8
25°C
1
−25°C
VDS
0.01
0
1.0
(V)
0.2
0.4
0.8
0.6
1.0
Gate - Source voltage
RDS (ON) – VGS
500
1.4
1.6
VGS (V)
ID = 0.25 A
Drain – Source on-resistance
RDS (ON) (mΩ)
400
300
25°C
200
Ta = 85°C
−25°C
100
0
2
4
6
Gate - Source voltage
8
10
250
VGS = 1.8 V
200
2.5V
150
4V
100
Common Source
50
0
12
Ta = 25°C
0
0.2
VGS (V)
0.4
0.6
Drain current
ID
RDS (ON) – Ta
(A)
Common Source
Vth (V)
400
200
Gate threshold voltage
ID = 0.1A / VGS = 1.8 V
300
0
−50
1.0
1.2
Common Source
100
0.8
Vth – Ta
500
Drain – Source on-resistance
RDS (ON) (mΩ)
1.2
RDS (ON) – ID
300
Common Source
Drain – Source on-resistance
RDS (ON) (mΩ)
Ta = 85°C
10
0.1
Drain - Source voltage
0
100
ID
ID
2.5V
0.6
0
VDS = 3 V
1000
(mA)
4V
0.8
Common Source
Common Source
Ta = 25°C
0.25 A / 4 V
0.25 A / 2.5 V
0
50
Ambient temperature
100
Ta
(°C)
ID = 1mA
0.8
0.6
0.4
0.2
0
150
VDS = 3V
1.0
−25
0
25
50
75
Ambient temperature
3
100
Ta
125
150
(°C)
2007-11-01
|Yfs| – ID
30
C – VDS
500
300
10
Ciss
(pF)
⎪Yfs ⎪
(S)
SSM4K27CT
C
1
0.3
0.1
Common Source
Coss
Crss
10
Common Source
5
Ta = 25°C
f = 1 MHz
VGS = 0 V
3
VDS = 3V
0.03
0.01
50
30
Capacitance
Forward transfer admittance
3
100
Ta = 25°C
1
10
100
Drain current
1000
ID
1
0.1
10000
1
(mA)
Dynamic Input Characteristic
Common Source
VDD = 10 V
VGS = 0∼-2.5V
Ta = 25°C
RG = 4.7 Ω
(ns)
8
7
t
6
VDD = 10 V
5
Switching time
(V)
VGS
(V)
t – ID
9
4
3
2
Common Source
ID = 0.5 A
Ta = 25°C
1
0
100
VDS
1000
10
Gate-Source voltage
10
Drain – Source voltage
0
1
2
4
3
Total gate charge
Qg
toff
100
tf
10
ton
tr
5
1
0.01
(nC)
0.1
1
Drain current
ID
10
(A)
PD – Ta
IDR – VDS
1.0
Drain power dissipation PD (W)
Common Source
VGS = 0V
(A)
IDR
Drain reverse current
1.2
Ta = 25°C
0.8
D
IDR
G
0.6
S
0.4
0.2
0
Mounted on FR4 board
0.8
0.6
0.4
0.2
0
0
0
-0.2
-0.4
-0.6
Drain-Source voltage
-0.8
VDS
-1
(25.4 mm × 25.4 mm × 1.6 t,
2
Cu Pad: 645 mm )
1
50
100
Ambient temperature Ta
-1.2
150
(°C)
(V)
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2007-11-01
SSM4K27CT
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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